Abstract: A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns.The coating apparatus includes an rf excited plasma source chamber having a gas feed ring for ionizing a gas admitted into the chamber via the ring. The preferred feedgas is a borazine and benzene vapor mixture. A coating chamber is mounted adjacent to and contiguous with the plasma source chamber via a neck portion. The coating chamber includes a vacuum interlock to permit the entry and removal of a tool transport. At least one vacuum pump is operatively connected to the chamber. Preferably, a plurality of permanent magnets and electron supply filaments are arranged circumferentially about the plasma source chamber. Preferably, the tool transport is rotatable during coating.

Abstract: A process of encapsulating solar cells in which a semiconductor wafer first is processed into an uncut cell. An interconnect strip is secured to the front contact of the cell. A coverglass plate, provided with a suitable coating, is next bonded to the front surface of the cell. Finally, the bonded assembly of cell and coverglass plate is cut to final size as a unit. The interconnect strip preferably is folded onto the back surface of the cell either during or prior to the cutting operation.

Abstract: Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film on the graded transition region. The process further includes doping the thin gallium arsenide film and forming a junction therein. The graded transition region preferably is a zone refined mixture of silicon and germanium characterized by a higher percentage of germanium at the surface of the region than adjacent the substrate. The process also includes the formation of homojunctions in thin gallium arsenide films.Solar cells made from the materials manufactured according to the process are characterized by a high conversion efficiency, improved stability and relatively low unit cost.

Abstract: A composite target cone for use in an X-ray lithography source tube. The composite target cone is multi-layered, having at least an X-ray generating layer formed of platinum, silver, palladium, rhodium, molybdenum, tungsten, silicon, aluminum or copper, and a water-interface layer. The water-interface layer includes a layer of high thermal conductivity material, covered at one side by a layer of high corrosion resistance material and at the other side by a layer of high-melting point material.

Abstract: A high resolution, rugged fiber optic coupler for use in optical data transmission systems and method of its manufacture. The fiber optic coupler includes a pair of thin silicon wafers having preferentially etched complementary opposed V-grooves. A very thin layer of a deformable hard glass is used as the lining for the V-grooves and also for covering one of the opposed surfaces of the pair of wafers. An optical fiber is held securely within a pair of opposed complementary V-grooves by the deformable hard glass lining. Preferably, the pair of silicon wafers is joined to each other, with the optical fiber held therebetween in the opposed V-grooves, by electrostatic bonding.

Abstract: A plasma ion deposition process of large-grain, thin semiconductor films directly on low-cost amorphous substrates comprising ionizing a semiconductor-based gaseous compound in a chamber by an electron-supported large volume, low pressure, high temperature plasma. The semiconductor ions are extracted from the compound and are deposited on the substrate. Preferably, the deposition is effected first at a slow deposition rate, followed by a higher deposition rate. The deposited ions are permitted to coalesce into lattice clusters, which clusters are grown, by further deposition, into a large-grain, thin semiconductor film on the substrate. Preferably, the semiconductor-based gaseous compound includes silane gas with dopant atom source gases.

Abstract: A coating apparatus and method for coating industrial cutting and turning tools of any desired shape and configuration and the like significantly to improve the tools' working properties. The coating is formed of cubic boron nitride, with a preferred thickness not exceeding ten microns. The coating apparatus includes an rf excited plasma source chamber having a gas feed ring for ionizing a gas admitted into the chamber via the ring. The preferred feed gas is a borazine and benzene vapor mixture. A coating chamber is mounted adjacent to and contiguous with the plasma source chamber via a neck portion. The coating chamber includes a vacuum interlock to permit the entry and removal of a tool transport. At least one vacuum pump is operatively connected to the chamber. Preferably, a plurality of permanent magnets and electron supply filaments are arranged circumferentially about the plasma source chamber. Preferably, the tool transport is rotatable during coating.

Abstract: A laminator for laminating and/or encapsulating a multilayer laminate assembly is disclosed. The laminator includes a processing chamber designed to receive the laminate assembly. The processing chamber is provided with independently controllable temperature, vacuum and pneumatic pressure capabilities for effecting optimum processing conditions for particular materials and configurations. The laminator features a double-vacuum system and a choice between two automatic cycles: a lamination cycle and a lamination-and-cure cycle. Preferably, the laminator is microprocessor controlled and is provided with a control panel where the processing parameters are set and monitored.

Abstract: A method of fabricating a thermal pane window or door and the product so produced. The method comprises assembling at least two panes of glass in spaced parallel relation to each other, defining a space therebetween and separated all around the edges by a metal spacer frame, and electrostatically bonding the frame to its adjacent panes in the presence of heat and pressure.The resultant thermal pane window or door is characterized by a hermetically sealed space between the two panes of glass that preferably has been evacuated so as to contain no moisture and oxygen and then preferably is filled with a low heat-loss gas or left under vacuum.

Abstract: Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film on the graded transition region. The process further includes doping the thin gallium arsenide film and forming a junction therein. The graded transition region preferably is a zone refined mixture of silicon and germanium characterized by a higher percentage of germanium at the surface of the region than adjacent the substrate. The process also includes the formation of homojunctions in thin gallium arsenide films.Solar cells made from the materials manufactured according to the process are characterized by a high conversion efficiency, improved stability and relatively low unit cost.

Abstract: Method and apparatus for the front surface metallization and encapsulation of solar cells of the type comprising p and n semiconductor strata separated by a barrier junction, and front and rear conducting strata constituting electrical contacts, wherein the front conducting stratum is a novel metallic grid permitting transmission of solar radiation to the semiconductor strata. This metallic grid is in the form of a mesh of wires of sufficiently high tensile strength to be self-supporting while being drawn from spools or the like into contact with one or more components of the solar cell before completion of the cells's fabrication.The method is characterized in that the metallic grid, in the form of the mesh of wires, is encapsulated between a transparent cover plate and the exposed front surface of the semiconductor strata, the mesh forming an electrical contact with the front surface of the semiconductor strata simultaneously that the plate is electrostatically bonded thereto.

Abstract: An integrated system and process for the continuous formation of p-n junctions in solar cells in a cost-effective manner and under computer control. The integrated system essentially comprises an ion beam implanter, an electron beam annealer and a combination vacuum lock-and-wafer transport system, all disposed within a unitary housing maintained under a common vacuum environment.The integrated system employs no wet chemistry operations and, is characterized by high reproducibility and narrow solar cell performance distribution.

Abstract: The surface of a starting single crystal of specified composition (e.g., silicon) is etched to produce a relief texture; a stratum of release composition (e.g., aluminum) is deposited on the relief texture to acquire a replica texture and is released to provide a replica master; a replica stratum of the specified composition in the amorphous or polycrystalline state is deposited on the replica master in order to acquire the original relief texture. It has been found that, when the replica stratum is recrystallized, it assumes a replica single crystal structure corresponding to the starting single crystal structure.

Abstract: Method and apparatus for the front surface metallization and encapsulation of solar cells of the type comprising p and n semiconductor strata separated by a barrier junction, and front and rear conducting strata constituting electrical contacts, wherein the front conducting stratum is a novel metallic grid permitting transmission of solar radiation to the semiconductor strata. This metallic grid is in the form of a mesh of wires of sufficiently high tensile strength to be self-supporting while being drawn from spools or the like into contact with one or more components of the solar cell before completion of the cell's fabrication.The method is characterized in that the metallic grid, in the form of the mesh of wires, is encapsulated between a transparent cover plate and the exposed front surface of the semiconductor strata, the mesh forming an electrical contact with the front surface of the semiconductor strata simultaneously that the plate is electrostatically bonded thereto.

Abstract: An electron beam processor with an energy storage line and matched field emission diode that define a high energy electron beam generator. A transport system positions a specimen to be thermally processed in a processing station. Energy stored on the line is discharged through the diode and the resulting high energy beam impacts upon the specimen for thermally processing selected regions thereof.

Abstract: An electron beam processor with an energy storage line and matched field emission diode that define a high energy electron beam generator. A transport system positions a specimen to be thermally processed in a processing station. Energy stored on the line is discharged through the diode and the resulting high energy beam impacts upon the specimen for thermally processing selected regions thereof. A tubular capacitor is disclosed for use in the processor. The capacitor (electrical energy store) has a shape so that it can be secured in coaxially in a pressure vessel. An outer electrode of the capacitor can include a mesh screen.

Abstract: A scanning X-ray source with an evacuated cylindrical chamber which bounds a cavity that is configured to receive a patient undergoing diagnosis. A moving electron beam is generated from a cathode which is attached to a rotating drum that is mounted within the chamber. The moving electron beam is directed towards and moves along a fixed annular anode mounted within the chamber. The points of beam impingement on the anode define a moving source of X-rays which sequentially irradiate the body from all directions. A plurality of detectors mounted adjacent the anode measure the amount of X-ray absorption. A processor receives the detected signals and reconstructs the absorption at each point to provide a two-dimensional density presentation for each body cross section.

Abstract: A method and apparatus for electrostatic bonding of a layered structure having at least one glass stratum by heating the layered structure to a temperature above the annealing point of the glass stratum, by applying a predetermined pressure and voltage potential across the layered structure while the layered structure is maintained at an elevated temperature. Application of pressure across the heated layered structure permits electrostatic bonding of non-complemental surfaces to form a laminated structure.

Abstract: A pulsed beam generator produces a short duration pulsed beam for thermal processing of selected regions of metallic and dielectric materials. The pulse beam is directed towards the material and irradiates selected surface regions thereof. Energy deposited by the pulsed beam momentarily elevates the temperature of the selected regions for a variety of thermal processing effects. The characteristics of the pulsed beam are such that only those regions on or near the surface are subjected to this thermal processing.

Abstract: A semiconductor thin film and glass stratum laminate is formed by depositing a semiconductor thin film onto a temporary substrate having a carbon coating to which the film adheres. Processing of the semiconductor thin film for selected performance characteristics is accomplished while the film is affixed to the temporary substrate. The processed thin film is transferred and electrostatically bonded to the glass stratum by exposure to a thermal environment at or below the softening point of the glass stratum and by application of an electric potential across the thin film and glass. The bonded thin film and glass stratum laminate is separated from the temporary substrate.