Abstract: A vertical cavity light-emitting element includes a gallium-nitride-based semiconductor substrate, a first multilayer reflector on the substrate, a semiconductor structure layer that includes an active layer made of a nitride semiconductor, a second multilayer reflector that is on the semiconductor structure layer and constitutes a resonator between the first and second multilayer reflectors, and a current confinement structure formed between the first and second multilayer reflectors. The first multilayer reflector is made by an In-containing nitride semiconductor layer containing In in composition and an In-free nitride semiconductor layer including no In being alternately laminated. The current confinement structure concentrates a current in one region of the active layer.

Abstract: A surface-emitting laser element includes a translucent substrate, a back surface of which is light emission surface, an air-hole layer that is a photonic crystal layer, and a light reflection layer including a reflection surface. The air-hole layer has a diffraction surface which has a weakening region where a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of interference light generated by interference of first diffracted light and second diffracted light is lower than a light intensity of the first diffracted light is provided, and a strengthening region where a separation distance between the diffraction surface and the reflection surface is provided such that the light intensity of the interference light is higher than the light intensity of the first diffracted light is provided.

Abstract: A lighting tool for a vehicle includes a first light source and a second light source, a first-light-guide-body that guides first light emitted from the first light source, and a second-light-guide-body that guides second light emitted from the second light source, the first-light-guide-body has a rod-shaped first light guide part, a first incidence part located on a base end side of the first light guide part, and a branch emission part that emits some of first light, which is guided in the first light guide part, to an outside of the first light guide part, and the second-light-guide-body has a rod-shaped second light guide part, a second incidence part located on a base end side of the second light guide part, and a branch incidence part that causes first light, which is emitted from the branch emission part, to enter the second light guide part.

Abstract: To provide a liquid crystal element having multiple alignment domains with a simple configuration. The liquid crystal element includes: a first and a second substrate; a liquid crystal layer inbetween the two substrates; and a seal material with an injection port; where a first and a second alignment film each has an alignment regulating force in one direction on a surface in contact with the liquid crystal layer, a polymerized monomer is present at the interface between each of the two alignment films and the liquid crystal layer; the liquid crystal layer has a first region close to the injection port and a second region far from the injection port; and the first region has a high polymer density and has a pretilt angle in a direction opposite to the alignment regulating force, and the second region has a pretilt angle in the same direction as the alignment regulating force.

Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror on the substrate, a first semiconductor layer on the first multilayer film reflecting mirror, a light-emitting layer on the first semiconductor layer, and a second semiconductor layer on the light-emitting layer. The second semiconductor layer includes a low resistance region and a high resistance region on an upper surface. The high resistance region is depressed from the low resistance region toward the light-emitting layer outside the low resistance region and impurities of the second conductivity type are inactivated in the high resistance region such that the high resistance region has an electrical resistance higher than an electrical resistance of the low resistance region. A light-transmitting electrode layer is in contact with the low resistance region and the high resistance region, and a second multilayer film reflecting mirror is on the light-transmitting electrode layer.

Abstract: An optical element, which is arranged between a light source and a light deflector reflecting and two-dimensionally deflecting incident light, includes: a first region on which light from the light source is caused to be incident and which emits the light to the light deflector; and a second region which is different from the first region, on which light reflected and two-dimensionally deflected by the light deflector is incident, and which emits the light to an outside, and an optical surface having a different optical action is provided on at least one side of an incident side and an emission side of the first region and an incident side and an emission side of the second region.

Abstract: A liquid crystal element includes: a first substrate, a second substrate, and a liquid crystal layer arranged therebetween; auxiliary electrodes arranged on the first substrate; an insulation layer arranged covering a plurality of first electrodes; a plurality of pixel electrodes arranged between the insulation layer and the liquid crystal layer; and a counter electrode arranged on the second substrate; where the pixel electrodes are arranged with a gap provided therebetween in one direction, where the auxiliary electrodes are arranged to respectively overlap with the gap between the adjacent pixel electrodes, and is connected to the adjacent pixel electrodes through a contact hole provided in the insulation layer, and where the insulation layer has an opening part in a portion corresponding to the gap between the adjacent pixel electrodes.

Abstract: A substrate has a moth-eye nano pattern on a surface of the substrate in which cone-shaped protrusions are periodically formed, a first semiconductor layer on the moth-eye nano pattern and having a photonic crystal layer, an active layer on the first semiconductor layer and having a light-emitting layer, and a second semiconductor layer on the active layer.

Abstract: A wavelength conversion device includes a wavelength converter having a plate shape and a plurality of antennas. The wavelength converter converts a wavelength of incident light and generates wavelength-converted light and emits the wavelength-converted light. The plurality of antennas are disposed on a light-emitting surface of the wavelength converter. The plurality of antennas form an antenna array in a first region of the light-emitting surface. The respective plurality of antennas are arranged with a predetermined period in the first region. The antenna array is absent in a second region outside the first region. An optical path length from a light-receiving surface of the wavelength converter to the light-emitting surface of the incident light that reaches a light-emitting surface of the first region is longer than an optical path length from the light-receiving surface to the light-emitting surface of the incident light that reaches a light-emitting surface of the second region.

Abstract: A light source device 10 includes a laser diode 12 configured to emit laser light LDb, a fluorescent body 18 configured to generate primary fluorescence FL1 from the laser light LDb, a notch filter 38 configured to generate secondary fluorescence FL2 from the primary fluorescence FL1, an LED 30 configured to emit LED light LEb, and a dichroic mirror 40 configured to combine the secondary fluorescence FL2 and the LED light LEb.

Abstract: A semiconductor light emitting device includes: a wiring substrate on which a p-electrode and an n-electrode are provided on a substrate; a light-emitting functional layer including a p-type semiconductor layer and an n-type semiconductor layer connected to the p-electrode and the n-electrode, respectively, and bonded onto the wiring substrate; a light-transmitting optical element having a light shielding film provided on a side surface of a plate-shaped light-transmitting optical body and which has an annular frame portion that covers a peripheral edge portion of a back surface of the light-transmitting optical body and formed on the peripheral edge portion; and an adhesive layer configured to adhere the light-transmitting optical element to an upper surface of the wiring substrate such that the light-emitting functional layer is inserted into a recessed portion inside the frame portion. The recessed portion is filled with the adhesive layer.

Abstract: A semiconductor light emitting element (10) includes flat plate-shaped translucent element substrate (11) with two main surfaces (11A, 11B) facing each other, light emitting semiconductor layer (12) formed on one main surface (11A) of element substrate (11) and in which n-type semiconductor layer (13), light emitting layer (14), and p-type semiconductor layer (15) are laminated, n-electrode (16) connected to n-type semiconductor layer (13) through at least one hole portion (12A) leading to n-type semiconductor layer (13) and provided on p-type semiconductor layer (15) being electrically separated from p-type semiconductor layer (15) by insulating film (18), first element electrode (19) electrically connected to n-electrode (16) and provided to extend in first direction, and second element electrode (20) electrically connected to p-type semiconductor layer (15) and provided to extend in first direction while being spaced apart from first element electrode (19), where thickness of element substrate (11) is 100

Abstract: A manufacturing method for an optical deflector, in which a piezoelectric film layer having a uniform film thickness is formed on a substrate layer, includes forming a cavity to open to a SiO2 layer side in a forming region of an outside piezoelectric actuator by etching an SOI wafer from the SiO2 layer side, covering an exposed surface of the cavity with a SiO2 layer, and joining the SiO2 layer of the SOI wafer and a support layer of an SOI wafer to manufacture an SOI wafer in which the cavity is enclosed. Next, after a recess is formed on a back side of the SOI wafer, anisotropic dry etching is carried out from the back side in a depth direction of the recess to remove the SiO2 layer.

Abstract: A light-emitting device includes a first lead electrode and a second lead electrode, and a resin frame that covers an outer portion and a separation portion of the lead electrodes and has an opening portion that exposes the lead electrodes, and an LED. A protrusion provided in the first lead electrode is fitted into an enclosing portion provided in the second lead electrode to form a nested structure. Hollowed portions are provided in facing adjacent sides of the protrusion and the enclosing portion, and a region surrounded by the hollowed portion and the hollowed portion is filled with a part of a resin, thereby forming an anchor column.

Abstract: An optical element according to some embodiments includes: a plurality of lower electrodes spread on a surface of a lower substrate and including first and second lower electrodes arranged adjacent in a first direction in the lower substrate plane; a plurality of upper electrodes spread on a surface of an upper substrate and including a first upper electrode that faces the first lower electrode and a second upper electrode that faces a portion of the first lower electrode and the second lower electrode; and a conductive member that is sandwiched between and electrically connects the first lower electrode and the second upper electrode, the conductive member being selectively disposed in an overlap region in which the first lower electrode and the second upper electrode overlap when the first lower electrode and the second upper electrode are projected on a virtual plane parallel to the lower substrate or the upper substrate.

Abstract: A surface emitting laser element includes a substrate and a hexagonal semiconductor structure layer formed on the substrate which emits a light from an upper surface side or a bottom surface side The semiconductor structure layer includes a first clad layer of a first conductivity type, a first guide layer of the first conductivity type having a photonic crystal layer and a first embedding layer, a second embedding layer, an active layer, second guide layer, and a second clad layer of a second conductivity type. The photonic crystal layer has a plurality of voids disposed having two-dimensional periodicity when viewed from above. The first embedding layer is formed on an upper side of the photonic crystal layer and closes openings of the voids. And an oxygen concentration of the second embedding layer is less than an oxygen concentration of the first embedding layer.

Abstract: The present invention includes an n-type semiconductor layer formed on a first reflective mirror, an active layer made of multiple quantum wells formed on the n-type semiconductor layer, a final barrier layer formed on the final quantum well of the active layer, an electron blocking layer formed on the final barrier layer, a p-type semiconductor layer formed on the electron blocking layer, a dielectric spacer layer formed on the p-type semiconductor layer, and a second reflective mirror formed on the spacer layer. The number of antinodes of a standing wave due to emitted light from the active layer, included in the electron blocking layer and the p-type semiconductor layer is 1, the number of nodes is 0 or 1, and Expression (3) is satisfied for the active layer and the final barrier layer.

Abstract: To provide a light-emitting device that is able to reduce a light loss and achieve a narrow angled emitted light. The light-emitting device comprises: a light-emitting element having a rectangular parallelepiped shape and having an element electrode surface on which a pair of element electrodes made of a cathode and an anode are formed on a lower surface and a light-emitting surface on an upper surface opposed to the element electrode surface; a translucent light-collecting member disposed on the light-emitting surface of the light-emitting element and having a plurality of light emission regions separated away from one another on a surface opposite of a surface opposed to the light-emitting surface; and an optical structure formed to respectively overlap a plurality of the respective light emission regions viewed from above and having a plurality of convex lens portions in convex in an upper side.

Abstract: To achieve higher definition of a channel portion of an organic transistor and to reduce bulging at the edge part of the channel portion. A manufacturing method of an organic transistor includes: forming a gate electrode on a substrate surface; forming a gate insulating film on the substrate surface to cover the gate electrode; forming a drain electrode and a source electrode with a predetermined distance therebetween on the gate insulating film surface and at a position where each electrode partially overlaps with the gate electrode; forming a liquid crystal alignment film on the gate insulating film surface to cover the drain electrode and the source electrode; forming an opening part by dripping an etchant to a region of the liquid crystal alignment film that overlaps with the gate electrode in a plane view; and forming an organic semiconductor film at the opening part of the liquid crystal alignment film.

Abstract: To obtain a liquid crystal element having a plurality of alignment domains with a simple configuration. A manufacturing method of a liquid crystal element including: a first process that forms a first substrate having a first alignment film subjected to uniaxial alignment treatment; a second process that forms a second substrate having a second alignment film subjected to uniaxial alignment treatment; a third process that forms a liquid crystal layer between the first alignment film and the second alignment film using a liquid crystal material including a monomer which can be polymerized by light irradiation; and, of a first region and a second region adjacent to each other in the liquid crystal layer in a plane view, a fourth process that performs light irradiation with no voltage applied or with a voltage less than a threshold value applied to the first region.