Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a first semiconductor layer having a first conductivity type, a light-emitting layer, a second semiconductor layer having a second conductivity type opposite of the first conductivity type, and having an upper surface with a projection, an insulating layer that covers the upper surface of the second semiconductor layer and has an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer, a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer and is formed on the insulating layer, and a second multilayer film reflecting mirror formed on the transmissive electrode layer and constituting a resonator together with the first multilayer film reflecting mirror.

Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a light-emitting structure layer with a light-emitting layer, and a second multilayer film reflecting mirror. The second multilayer film reflecting mirror constitutes a resonator between the first and second multilayer film reflecting mirrors. The second multilayer film reflecting mirror includes a first multilayer film, an intermediate film, and a second multilayer film. The first and second multilayer films have low refractive index films and high refractive index films that are alternately stacked. The intermediate film covers an upper surface of the first multilayer film and film has a translucency to a light emitted from the light-emitting layer. The second multilayer film partially covers an upper surface of the intermediate film. The intermediate film has a film thickness based on ½ of a wavelength inside the intermediate film of light emitted from the light-emitting layer.

Abstract: Provided is a bracket attachment structure for detachably attaching a bracket to which a radar unit is attached to an outer lens. In the bracket attachment structure, the outer lens is attached to a lamp housing and constitutes a lamp chamber in which a lamp unit is disposed between the outer lens and the lamp housing, the outer lens includes a recessed part, the bracket includes a bracket main body disposed in the recessed part and an extension part extending from an other end side on a side opposite to one end side of the bracket main body to the outside of the recessed part and detachably fixed to an attachment partner, a restricting part is provided on a bottom surface of the recessed part, and a fitting recessed part into which the restricting part is inserted and fitted is provided in the bracket main body.

Abstract: A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

Abstract: A semiconductor light-emitting device includes: a substrate having a wiring electrode; a semiconductor light-emitting element mounted on the wiring electrode and having a light-emitting functional layer with an upper surface exposed; a wavelength conversion plate mounted on the light-emitting functional layer and being made of a sintered body including fluorescent material particles and binder particles; and an adhesive layer including a resin medium for adhering a light-incident surface of the wavelength conversion plate to a light output surface of the light-emitting functional layer, and resin particles dispersed in the resin medium. The light-incident surface can expose a sintered surface of the sintered body with a concave portion, and the resin particles are fitted in the concave portion and compressively deformed. The semiconductor light-emitting device is capable of reducing the heat generated from the wavelength conversion plate and of maintaining the high light output.

Abstract: A light-emitting device according to the present invention includes a resin substrate having a flat plate shape, a first wiring electrode made of metal, a second wiring electrode made of metal, a light-emitting element, and a resin body. The light-emitting element is mounted onto the electrode portions of the first wiring electrode and the second wiring electrode on the first principal surface side of the resin substrate. The resin body has a light reflection property, covers the first principal surface of the resin substrate, covers the respective wiring portions of the first wiring electrode and the second wiring electrode and forming a frame body surrounding the light-emitting element on the first principal surface, and covers a region exposed from the first wiring electrode and the second wiring electrode on the second principal surface of the resin substrate.

Abstract: A vehicular lamp fitting according to the present invention comprises: a light guiding body; a first light source; and a second light source, wherein the light guiding body includes a first rod-shaped light guiding portion which guides first light emitted by the first light source, a second rod-shaped light guiding portion which guides second light emitted by the second light source, an intermediate portion which is arranged between the first rod-shaped light guiding portion and the second rod-shaped light guiding portion, a first coupling portion which couples a base end portion side of the first rod-shaped light guiding portion and the intermediate portion together such that a part of the first light, which enters the first rod-shaped light guiding portion through a light entering surface of the first rod-shaped light guiding portion, enters an inside of the intermediate portion.

Abstract: A fluid processing apparatus includes: a casing partitioned by a fluid processing region, a fluid inlet region on an upstream side of the fluid processing region and having a fluid inlet, and a fluid outlet region on a downstream side of the fluid processing region and having a fluid outlet; a hollow fluid passage pipe provided in the fluid processing region of the casing; an ultraviolet ray emitting unit provided in the fluid outlet region of the casing; a fluid branching and joining member provided over the fluid inlet region and the fluid processing region of the casing and fixed by ribs to the casing.

Abstract: To perform optical axis adjustment according to the state of a vehicle. A vehicle headlight control apparatus which controls an optical axis of irradiation light emitted by a headlight of a vehicle including: a specification unit that specifies a vehicle state; and an optical axis adjustment unit that receives results from the specification unit and adjusts the optical axis; where the specification unit: sets a reference value which pertains to an acceleration to a first value when the vehicle is an engine vehicle; sets the reference value to a second value which is smaller than the first value when the vehicle is not an engine vehicle; then specifies the vehicle state to be a stopping state when the acceleration detected by an acceleration sensor is smaller than the reference value; and specifies the vehicle state to be a non-stopping state when the acceleration is greater than the reference value.

Abstract: A light-guide-part has width that gradually increases from first-end toward second-end and shape in which both sides of the light-guide-part in widthwise direction having optical axis interposed between are curved toward one-direction. An incidence-part has incidence-surface located in central part of the first-end of the light-guide-part and facing light source. The incidence-surface has shape in which both sides of the incidence-surface in the widthwise direction having the optical axis interposed between are curved toward the one-direction, curved in concave shape when the light-guide-part is seen from the one-direction, and curved in convex shape in cross section in thickness direction of the light-guide-part parallel to the optical axis. A reflecting-part has reflecting-surface inclined toward the one-direction on the second-end of the light-guide-part.

Abstract: A light deflector includes a mirror part, a pair of torsion bars, inside piezoelectric actuators, and a movable frame part. The crystal orientation in the axial direction of the torsion bars is set to <100>. In the joint edge portions of the torsion bars and the inside piezoelectric actuators, radius parts are oriented to <110> and each formed by a curved surface recessed inward. The amount of waviness about a roughness curve derived from the curved surface is set within 600 nm.

Abstract: A stacked body is formed by polishing an upper surface of a light emitting element plate, polishing a lower surface of a phosphor plate, mounting the phosphor plate on a light emitting element, and applying heat and applying pressure. From the phosphor plate side, incisions are inserted into the stacked body at positions corresponding to gaps between a plurality of semiconductor light emitting layers. From the light emitting element side, notches are formed in the stacked body at the gaps between the plurality of semiconductor light emitting layers. A semiconductor light emitting device is individualized by dividing the stacked body between a tip of the incision and a tip of the notch. One of the incision and the notch is formed with a depth extending beyond a bonding surface between the phosphor plate and the light emitting element plate.

Abstract: A single crystal AlN substrate includes a first surface and a second surface as an opposite side surface of the first surface. The first surface has a flat surface as an Al-polar surface and an inclined surface formed from an outer edge of the flat surface to a side surface. The second surface is an N-polar surface. The inclined surface is formed up to a position having a distance from an end portion of the single crystal AlN substrate in a direction along the flat surface of 0.45 mm or more and 0.75 mm or less, and is formed up to a position having a distance from the flat surface in a direction perpendicular to the flat surface of 0.2 mm or more and 0.3 mm or less.

Abstract: A lighting apparatus includes a light source; a condensing part that condenses light and forms a focal point at a predetermined position; a liquid crystal element arranged at a position including the focal point; a first polarizing element; a second polarizing element; and a projection lens that projects images generated by the liquid crystal element and the polarizing elements; where the liquid crystal element has a first surface which includes the focal point position and is perpendicular to the projection lens optical axis, and a second surface disposed around the first surface and is oblique to the projection lens optical axis; and where the second surface is arranged such that the light is incident on the liquid crystal layer of the liquid crystal element from a best viewing azimuth of the liquid crystal element.

Abstract: A surface-emitting laser element includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, an air-hole layer, and a reflection layer. A light emission surface is provided on a rear surface of the substrate. The air-hole layer has a diffraction surface that is a symmetrical center surface when light standing in the air-hole layer is diffracted with an electric field amplitude symmetrical in a direction orthogonal to the air-hole layer. A separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of combined light of first diffracted light diffracted from the diffraction surface to a side of the light emission surface and second diffracted light diffracted from the diffraction surface to a side of the reflection layer and reflected on the reflection surface is larger than a light intensity of the first diffracted light.

Abstract: A light-emitting device includes a substrate, a frame body, a light-emitting element, a wavelength converter, and a light reflecting portion. The light-emitting element includes a semiconductor light-emitting layer on a support substrate. The wavelength converter is disposed on an upper surface of the light-emitting element. The light reflecting portion covers side surfaces of the light-emitting element and the wavelength converter and is formed of a translucent resin containing light reflective particulate fillers. The light reflecting portion includes a first region extending along an upper surface of the light reflecting portion, a second region that is disposed under the first region and has a content rate of the particulate fillers lower than a content rate of the first region, and a third region that is disposed under the second region and has a content rate of the particulate fillers lower than the content rate of the second region.

Abstract: A surface-emitting laser element includes a translucent substrate, a back surface of which is light emission surface, an air-hole layer that is a photonic crystal layer, and a light reflection layer including a reflection surface. The air-hole layer has a diffraction surface which has a weakening region where a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of interference light generated by interference of first diffracted light and second diffracted light is lower than a light intensity of the first diffracted light is provided, and a strengthening region where a separation distance between the diffraction surface and the reflection surface is provided such that the light intensity of the interference light is higher than the light intensity of the first diffracted light is provided.

Abstract: A vertical cavity light-emitting element includes a gallium-nitride-based semiconductor substrate, a first multilayer reflector on the substrate, a semiconductor structure layer that includes an active layer made of a nitride semiconductor, a second multilayer reflector that is on the semiconductor structure layer and constitutes a resonator between the first and second multilayer reflectors, and a current confinement structure formed between the first and second multilayer reflectors. The first multilayer reflector is made by an In-containing nitride semiconductor layer containing In in composition and an In-free nitride semiconductor layer including no In being alternately laminated. The current confinement structure concentrates a current in one region of the active layer.

Abstract: A lighting tool for a vehicle includes a first light source and a second light source, a first-light-guide-body that guides first light emitted from the first light source, and a second-light-guide-body that guides second light emitted from the second light source, the first-light-guide-body has a rod-shaped first light guide part, a first incidence part located on a base end side of the first light guide part, and a branch emission part that emits some of first light, which is guided in the first light guide part, to an outside of the first light guide part, and the second-light-guide-body has a rod-shaped second light guide part, a second incidence part located on a base end side of the second light guide part, and a branch incidence part that causes first light, which is emitted from the branch emission part, to enter the second light guide part.

Abstract: To provide a liquid crystal element having multiple alignment domains with a simple configuration. The liquid crystal element includes: a first and a second substrate; a liquid crystal layer inbetween the two substrates; and a seal material with an injection port; where a first and a second alignment film each has an alignment regulating force in one direction on a surface in contact with the liquid crystal layer, a polymerized monomer is present at the interface between each of the two alignment films and the liquid crystal layer; the liquid crystal layer has a first region close to the injection port and a second region far from the injection port; and the first region has a high polymer density and has a pretilt angle in a direction opposite to the alignment regulating force, and the second region has a pretilt angle in the same direction as the alignment regulating force.