Abstract: Radiant energy line source(s) (e.g., laser diode array) and anamorphic relay receiving radiant energy therefrom and directing that energy to a substrate in a relatively uniform line image. The line image is scanned with respect to the substrate for treatment thereof. Good uniformity is provided even when the line source is uneven. Optionally, delimiting aperture(s) located in the anamorphic relay focal plane and a subsequent imaging relay are includeable to permit substrate exposure in strips with boundaries between adjacent strips within scribe lines between circuits. An anamorphic relay focal plane mask with a predetermined pattern can be used to define portions of the substrate to be treated with the substrate and mask scanning motions synchronized with each other. Control of source output, and position/speed of the substrate, with respect to the line image, allows uniform dose and required magnitude over the substrate.

Abstract: A system and method for performing alignment of a substrate using alignment marks on the backside of a substrate supported by a movable chuck is disclosed. The system includes an imaging optical system arranged such that the movable chuck can position one end of the optical system either adjacent the front surface of the substrate or near the front surface but outside the perimeter of the substrate. In one embodiment, secondary optical systems are arranged within the chuck at the chuck perimeter so as to be in optical communication with corresponding alignment marks. The chuck is movable so that the imaging optical system can be placed in optical communication with the second optical system and image the alignment marks onto a detector. The detector converts the alignment mark images into digital electronic images, which are stored in a computer system and processed. The chuck then moves the substrate to exposure locations based on the result of processing the images.

Abstract: Disclosed are first and second embodiments of a 3-channel probe-plate structure of the fiber-optic interferometer, wherein low-coherent-length light from a superluminescent light-emitting diode is split by a tree splitter into three light branches which are coupled as separate light inputs to the probe-pate structure by single-mode, polarization-preserving optical fibers. For each of the 3 channels, the first embodiment of the probe-plate structure comprises an integrated polarizing lithium-niobate Y splitter-modulator for deriving separate reference-arm light and probe-arm light.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g.

Abstract: The respective magnets of each of a plurality of spaced Halbach magnet arrays in both the X and Y directions that incorporate in the arrays in both directions, the magnets having a field oriented parallel to the Z axis in alternately the positive and negative directions. The magnets in each array in each direction that are not shared by the crossing Halbach magnet arrays each has a horizontal field orientation parallel to either the X or the Y axis with the filed direction in each instance pointing toward the adjacent magnet having its field oriented in the positive Z direction. Additionally, four layers of coils of wire in separate X-Y planes in substantially vertical alignment with each other contain coils each with a selected orientation relative to the X or Y axis such that they provide levitation, lateral motion, as well as roll, pitch and yaw adjustments to the magnet array forming an X-Y stage for precision positioning an object located on the top surface of the magnet.

Abstract: A method of forming a silicide region (80) on a Si substrate (10) in the manufacturing of semiconductor integrated devices, a method of forming a semiconductor device (MISFET), and a device having suicide regions formed by the present method. The method of forming a suicide region involves forming a silicide region (80) in the (crystalline) Si substrate having an upper surface (12) and a lower surface (14). The method comprises the steps of first forming an amorphous doped region (40) in the Si substrate at or near the upper surface, to a predetermined depth (d). This results in the formation of an amorphous-crystalline interface (I) between the amorphous doped region and the crystalline Si substrate. The next step is forming a metal layer (60) atop the Si substrate upper surface, in contact with the amorphous doped region. The next step involves performing backside irradiation with a first radiation beam (66).

Abstract: A shallow trench isolation (STI) structure (170, 300), formed in a silicon substrate (110) for use in sub-micron integrated circuit devices, for providing enhanced absorption of a wavelength of laser light during laser annealing. The STI structure includes a shallow trench (140) having a depth of 0.5 &mgr;m or less etched in the silicon substrate, and an optical blocking member (174, 304) that includes an insulator (144, 224) formed in the shallow trench and designed to reflect or absorb the wavelength of laser light to mitigate redistribution of the dopant and/or recrystallization of a portion of the silicon substrate. Methods of forming the optical blocking member are also disclosed.

Abstract: The invented method produces a silicide region on a silicon body that is useful for a variety of purposes, including the reduction of the electrical contact resistance to the silicon body or an integrated electronic device formed thereon. The invented method includes a step of producing an amorphous region on the silicon body using ion implantation, for example, a step of forming a metal layer such as titanium, cobalt or nickel in contact with the amorphous region, and a step of irradiating the metal with intense light from a source such as a laser, to cause metal atoms to diffuse into the amorphous region to form an alloy region with a silicide composition. In an application of the invented method to the manufacture of a MISFET device, the metal layer is preferably formed with a thickness that is at least sufficient to produce a stoichiometric proportion of metal and silicon atoms in the amorphous region of the gate of the MISFET device.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A high-speed semiconductor transistor and process for forming same. The process includes forming, in a Si substrate (10), spaced apart shallow trench isolations (STIs) (20), and a gate (36) atop the substrate between the STIs. Then, regions (40,44) of the substrate on either side of the gate are either amorphized and doped, or just doped. In certain embodiments of the invention, extension regions (60,62 or 60′,62′) and deep drain and deep source regions (80, 84 or 80′,84′) are formed. In other embodiments, just deep drain and deep source regions (80, 84 or 80′, 84′) are formed. A conformal layer (106) is then formed atop the substrate, covering the substrate surface (11) and the gate. The conformal layer can serve to absorb light and/or to distribute heat to the underlying structures. Then, at least one of front-side irradiation (110) and back-side irradiation (116) is performed to activate the drain and source regions and, if present, the extensions.

Abstract: A simple −1X, catadioptric projection relay system (e.g., a modified Wynne-Dyson relay) is combined with a linear scanning and object and image indexing systems to provide good imagery over a useful field which is two or more times wider than the field size of the projection system and arbitrarily long. The projection system has opposed and parallel object and image planes and produces an image in which object and image vectors in one direction are parallel and in a normal direction are opposed. The reticle and substrate are clamped and scanned together in the parallel direction and are indexed in the normal direction by equal and opposite amounts between scans. An example shows how a 2.5 micron resolution, i-line projection system with a 300 mm wide field could be used to expose a 550 mm wide substrate In two scans to yield a very high throughput.

Abstract: An method of and apparatus (10) for performing laser thermal processing (LTP) of a workpiece (74) having one or more workpiece fields (78). The apparatus includes a pulsed, solid state laser light source (14) having more than 1000 spatial modes (M) and capable of emitting one or more pulses of radiation with a temporal pulse length between 1 nanosecond and 1 microsecond, a workpiece stage (70) for supporting the workpiece, and an illumination optical system having an exposure field (64). The system is arranged between the laser light source and the workpiece stage so as to illuminate within the exposure field at least one of the one or more workpiece fields with the one or more pulses of radiation, with an irradiance uniformity of less than ±5%. The method and apparatus is particularly well-suited for LTP processing of workpieces which require a single pulse or only a few pulses of high-irradiance radiation.

Abstract: A simplified and cost reduced process for fabricating a field-effect transistor semiconductor device (104) using laser radiation is disclosed. The process includes the step of forming removable first dielectric spacers (116R) on the sides (120a, 120b) of the gate (120). Dopants are implanted into the substrate (100) and the substrate is annealed to form an active deep source (108) and an active deep drain (110). The sidewall spacers are removed, and then a blanket pre-amorphization implant is performed to form source and drain amorphized regions (200a, 200b) that include respective extension regions (118a, 118b) that extend up to the gate. A layer of material (210 is deposited over the source and drain extensions, the layer being opaque to a select wavelength of laser radiation (220). The layer is then irradiated with laser radiation of the select wavelength so as to selectively melt the amorphized source and drain extensions, but not the underlying substrate.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. Tne reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.

Abstract: A light tunnel apparatus (200 or 300) having an output end (56 or 98), for uniformizing light (L) that travels through a light tunnel (30 or 80). The apparatus comprises a light tunnel having first and second sides (36, 40 or 86, 90), and one or more AO modulators (210 or 310) respectively arranged on at least one of the first and second sides. The AO modulators are arranged such that activating the one or more of them causes at least one of the first and second sides to be displaced. This displacement changes the path of light traveling through the light tunnel by an amount sufficient to reduce illumination non-uniformities at the output end. The light tunnel may be a hollow light tunnel (30) with reflective inner surfaces, or a solid light tunnel (80) with a refractive index. A method of uniformizing illumination using a light tunnel is also disclosed.

Abstract: The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed.

Abstract: A folded light tunnel apparatus and method of providing light with a high degree of spatial uniformity in a compact arrangement. The light tunnel (100, 190, 300, 350) comprises plurality of prisms (110, 310) having a different cross-sectional dimension (W) and at least one beveled end (110E) having a corresponding beveled end face (110F) through which light reflected by the beveled end passes. The plurality of prisms are arranged adjacent one another in a either two-dimensional or three dimensional stack, with each beveled end face arranged adjacent another beveled end face such that light reflected from one beveled end is received by said adjacent beveled end face and coupled into the adjacent prism. The width of the prisms is governed by a scaling factor (K or K′) that depends on whether the prism stack is two-dimensional or three-dimensional. Designing the light tunnel according to the scaling factor allows for the light tunnel to be theoretically 100% efficient in the transmission of light.

Abstract: A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with laser radiation (10) using a thermally induced reflectivity switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs laser radiation and converts the absorbed radiation into heat. A reflective switch layer (60) is deposited atop the absorber layer. The reflective switch layer may comprise one or more thin film layers, and preferably includes a thermal insulator layer and a transition layer. The portion of the reflective switch layer covering the process region has a temperature that corresponds to the temperature of the process region.