Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a surface region characterized by a copper poor surface having a copper-to-indium atomic ratio of less than about 0.95:1.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first transparent electrode layer is formed overlying the surface region. A multilayered structure including a copper material and an indium material is formed overlying a electrode surface region. The multilayered structure is subjected to a plurality of sulfur bearing entities during a rapid thermal process to form an absorber material comprising a copper entity, an indium entity, and a sulfur entity. The rapid thermal process uses a ramp time ranging from about 10 Degrees Celsius/second to about 50 Degrees Celsius/second. In a specific embodiment, the first transparent electrode layer is maintained to a sheet resistance of less than or equal to about 10 Ohms/square centimeters and an optical transmission of 90 percent and greater.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and forming a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films. These properties are used to determine and adjust process conditions for subsequent processes.

Abstract: A method for fabricating a thin film solar cell includes providing a soda lime glass substrate comprising a surface region and a concentration of sodium oxide of greater than about 10 wt % and treating the surface region with one or more cleaning process, using a deionized water rinse, to remove surface contaminants having a particles size of greater than three microns. The method also includes forming a barrier layer overlying the surface region, forming a first molybdenum layer in tensile configuration overlying the barrier layer, and forming a second molybdenum layer in compressive configuration using a second process overlying the first molybdenum layer. Additionally, the method includes patterning the first molybdenum layer and the second molybdenum layer to form a lower electrode layer and forming a layer of photovoltaic material overlying the lower electrode layer. Moreover, the method includes forming a first zinc oxide layer overlying the layer of photovoltaic materials.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subject at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material includes one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95:1 and a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1.

Abstract: A solar device is provided, comprising a substrate structure having a surface region, a flexible and conformal material comprising a polymer material affixing the surface region, and one or more solar cells spatially provided by one or more films of materials characterized by a thickness dimension of 25 microns and less and mechanically coupled to the flexible and conformal material. The one or more solar cells have a flexible characteristic. The flexible characteristic maintains each of the solar cells substantially free from any damage or breakage thereto when the one or more films of materials is subjected to bending.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a copper poor surface region characterized by a copper-to-indium atomic ratio of less than about 0.95:1.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1.

Abstract: A system for large scale manufacture of thin film photovoltaic cells. The system includes a chamber comprising a plurality of compartments in a common vacuum ambient therein. Additionally, the system includes one or more shutter screens removably separating each of the plurality of compartments. The system further includes one or more transfer tools configured to transfer a substrate from one compartment to another without breaking the common vacuum ambient. The substrate is optically transparent and is characterized by a lateral dimension of about 1 meter or greater for a solar module. Embodiments of the invention provide that at least some of the plurality of compartments are configured to subject the substrate to one or more thin film processes to form a Cu-rich Cu—In composite material overlying the substrate and at least one of the plurality of compartments is configured to subject the Cu-rich Cu—In composite material to a thermal process to form a chalcogenide structured material.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films.

Abstract: thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, to at least initiate formation of a copper indium diselenide film.

Abstract: The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films.

Abstract: A method for fabricating a thin film photovoltaic device. The method includes providing a substrate comprising an absorber layer and an overlying window layer. The substrate is loaded into a chamber and subjected to a vacuum environment. The vacuum environment is at a pressure ranging from 0.1 Torr to about 0.02 Torr. In a specific embodiment, a mixture of reactant species derived from diethylzinc species, water species and a carrier gas is introduced into the chamber. The method further introduces a diborane species using a selected flow rate into the mixture of reactant species. A zinc oxide film is formed overlying the window layer to define a transparent conductive oxide using the selected flow rate to provide a resistivity of about 2.5 milliohm-cm and less and an average grain size of about 3000 to 5000 Angstroms.

Abstract: A method for fabricating a copper indium diselenide semiconductor film using a self cleaning furnace is provided. The method includes transferring a plurality of substrates having a copper and indium composite structure into a furnace comprising a processing region and at least one end cap region disengageably coupled to the processing region. The method also includes introducing a gaseous species including a hydrogen species and a selenium species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to initiate formation of a copper indium diselenide film on each of the substrates. The method further includes decomposing residual selenide species from an inner region of the process region of the furnace. The method further includes depositing elemental selenium species within a vicinity of the end cap region operable at a third temperature.

Abstract: An apparatus for fabricating thin films on substrate panels includes a deposition chamber enclosed by sidewalls, a lid, and a base. The apparatus includes a mixing chamber disposed above the lid and configured to receive vapor species and form a mixed vapor. The mixing chamber is coupled with the deposition chamber via inlets through the lid, including a diffuser plate. Two heater plates disposed side by side on the base supporting and heating two substrates.

Abstract: A method of forming composite nanostructures using one or more nanomaterials. The method provides a nanostructure material having a surface region and one or more nano void regions within a first thickness in the surface region. The method subjects the surface region of the nanostructure material with a fluid. An external energy is applied to the fluid and/or the nanostructure material to drive in a portion of the fluid into one or more of the void regions and cause the one or more nano void regions to be substantially filled with the fluid and free from air gaps.