Abstract: A method for transmitting an Internet Protocol (IP) data packet from a first device to a second device, includes: transmitting a message from the first device to a telephone number associated with the second device; receiving the message at the second device and, in response to the message, determining a first IP address of the first device and transmitting a first IP packet from the second device to the first IP address; receiving the first IP packet at the first device and determining a source IP address of the first IP packet; and transmitting a second IP packet from the first device to the source IP address of the first IP packet.

Abstract: A MEMS resonator is equipped with a substrate, a moving structure suspended above the substrate in a horizontal plane formed by first and second axes, having first and second arms, parallel to one another and extending along the second axis, coupled at their respective ends by first and second transverse joining elements, forming an internal window. A first electrode structure is positioned outside the window and capacitively coupled to the moving structure. A second electrode structure is positioned inside the window. One of the first and second electrode structures causes an oscillatory movement of the flexing arms in opposite directions along the first horizontal axis at a resonance frequency, and the other electrode structure has a function of detecting the oscillation. A suspension structure has a suspension arm in the window. An attachment arrangement is coupled to the suspension element centrally in the window, near the second electrode structure.

Abstract: An electronic device disclosed herein includes a display layer generating display noise based on scanning thereof, and a sensing layer including a plurality of sense lines. A common voltage layer is coupled to the display layer and the sensing layer, with the common voltage layer capacitively coupling the display noise from the display layer to the each of the plurality of sense lines of the sensing layer via a different parasitic impedance. An amplitude of the display noise seen at an input to each sense line is a function of a location of that sense line. The electronic device includes a plurality of compensation impedances, with each compensation impedance coupled to a different one of the plurality of sense lines. Each of the plurality of compensation impedances has an impedance value such that an amplitude of the display noise at an output of each sense line is substantially equal.

Abstract: An electronic device is integrated on a chip of semiconductor material having a main surface and a substrate region with a first type of conductivity. The electronic device has a vertical MOS transistor, formed in an active area having a body region with a second conductivity type.

Abstract: The present disclosure is directed to a microfluidic die that includes ejection circuitry and one time programmable memory with a minimal number of contact pads to external devices. The die includes a relatively large number of nozzles and a relatively small number of contact pads. The die includes decoding circuitry that utilizes the small number of contact pads to control the drive and ejection of the nozzles and the reading/writing of the memory with the same contact pads.

Abstract: A ranging apparatus includes an array of light sensitive detectors configured to receive light from a light source which has been reflected by an object. The array includes a number of different zones. Readout circuitry including at least one read out channel is configured to read data output from each of the zones. A processor operates to process the data output to determine position information associated with the object.

Abstract: A driving apparatus configured to drive a light emitting device includes a driving current source module operable to supply current to the light emitting device via a node during operation. A protection module coupled to the node and the driving current source module selectively injects current to the node during operation. The driving current source module is controlled based on a detection result of a voltage on the node.

Abstract: A circuit includes a first transistor and a second transistor having respective control terminals coupled to receive first and second bias voltages. A first electronic switch is coupled in series with, and between current paths of the first and second transistors to provide an output current line between a circuit output node and ground. A second electronic switch is selectively activated to a conductive state in order to provide a charge transfer current path between a bias node and a charge transfer node in the output current line. A third electronic switch is selectively activated to a conductive state in order to provide a charge transfer current path between the charge transfer node and the control terminal of the second transistor.

Abstract: A standard cell layout for a flip-flop includes a flip-flop circuit and an initialization circuit. Metallization levels over the standard cell layout support circuit interconnections. At least one metallization level is provided for metal programming of an initialization configuration of the flip-flop. The at least one metallization level may have: a first wiring layout for interconnecting the initialization circuit to the flip-flop circuit for configuration programming of the flip-flop as an initialization in reset device (assertion of an initialization signal causing the flip-flop data output to be reset), or a second wiring layout for interconnecting the initialization circuit to the flip-flop circuit for configuration programming of the flip-flop as an initialization in set device (assertion of the initialization signal causing the flip-flop data output to be set).

Abstract: An electronic device disclosed herein includes a locked loop circuit configured to receive a reference signal intended to have an intended frequency, wherein the locked look circuit is intended to generate an intended output signal having an intended frequency equal to the intended frequency multiplied by an intended multiplier. A frequency counter counts a number of pulses of the reference signal during a time window so as to determine an actual frequency of the reference signal. A control circuit determines an actual multiplier for the locked loop circuit that, when multiplied by the actual frequency of the reference signal, causes the locked loop circuit to generate an actual output signal having an actual frequency equal to the intended frequency.

Abstract: An integrated electronic device includes a silicon-on-insulator (SOI) substrate. At least one MOS transistor is formed in and on the SOI substrate. The at least one MOS transistor has a gate region receiving a control voltage, a back gate receiving an adjustment voltage, a source/drain region having a resistive portion, a first terminal coupled to a first voltage (e.g., a reference voltage) and formed in the source/drain region and on a first side of the resistive portion, and a second terminal generating a voltage representative of a temperature of the integrated electronic device, the second terminal being formed in the source/drain region and on a second side of the resistive portion. Adjustment circuitry generates the adjustment voltage as having a value dependent on the control voltage and on the voltage generated by the second terminal.

Abstract: A contactless card is powered by an antenna connected to the input of a rectifier. An output of the rectifier is coupled to a processing unit that consumes a first current output from the rectifier. A current regulation circuit is connected to the output of the rectifier. The current regulation circuit operates to absorb a second current from the output of the rectifier such that a sum of the first and second currents is a constant current.

Abstract: A MOS transistor with two vertical gates is formed within a substrate zone of a semiconductor substrate doped with a first type of conductivity and separated from a remaining portion of the substrate by two first parallel trenches extending in a first direction. An isolated gate region rests on each flank of the substrate zone and on a portion of the bottom of the corresponding trench to form the two vertical gates. At least one gate connection region electrically connects the two vertical gates. A first buried region located under the substrate zone is doped with a second type of conductivity to form a first conduction electrode of the MOS transistor. A second region doped with the second type of conductivity is located at the surface of the substrate zone to form a second conduction electrode of the MOS transistor.

Abstract: A method begins with forming a first wiring layer on a substrate, forming a cavity in the substrate, and laminating a bottom side of the substrate so as to cover a bottom side of the cavity. Next, an integrated circuit is placed within the cavity of the substrate, and then a first optically transparent layer is disposed on the top surface of the substrate to cover a top surface of the integrated circuit. The first optically transparent layer has an aperture formed therein exposing at least a portion of the top surface of the integrated circuit. A second wiring layer is disposed on a top surface of the first optically transparent layer in a pattern that does not obstruct light traveling to or from the top surface of the integrated circuit. The integrated circuit is a laser emitting integrated circuit or a reflected light detector.

Abstract: An operational amplifier integrated circuit includes a differential pair of transistors having a first input, a second input. A bias current generator applies a bias current to an output of the differential pair of transistors. A control loop generates a control voltage arising from a difference in potentials between the first input and the second input. An additional current that is added to the bias current is generated in response to the control voltage.

Abstract: A switching amplifier, such as a Class D amplifier, includes a current sensing circuit. The current sensing circuit is formed by replica loop circuits that are selectively coupled to corresponding output inverter stages of the switching amplifier. The replica loop circuits operated to produce respective replica currents of the output currents generated by the output inverter stages. A sensing circuitry is coupled to receive the replica currents from the replica loop circuits and operates to produce an output sensing signal as a function of the respective replica currents.

Abstract: In one embodiment, an imaging device includes a light-emitting device, a driving circuit, a return single-photon avalanche diode (SPAD) array and readout circuitry. The driving circuit generates a driving signal, and the light-emitting device generates an optical pulse based on the driving signal. The return SPAD array is configured to receive a first portion of the optical pulse that is reflected by an object in an image scene. The readout circuitry receives a signal indicative of the received first portion of the optical pulse, and a signal indicative of the driving signal, and determines a distance between the imaging device and the object based on a difference between a time of receiving the signal indicative of the received first portion of the optical pulse and a time of receiving the signal indicative of the driving signal.

Abstract: A digital filtering method includes receiving a digital signal, and passing the digital signal through a Pth order comb cascade. The method includes beginning pre-computing of intermediate integrator states of a Pth order integrator cascade as a function of the digital signal, prior to receiving output from a last comb of the Pth order comb cascade. The outputs from each comb of the Pth order comb cascade are then applied to the pre-computed intermediate integrator states to thereby produce a filtered version of the digital signal. The Pth order comb cascade may operate at a sampling frequency, and the pre-computing of the intermediate integrator states is performed at the sampling frequency, while the application of the outputs from each comb of the Pth order comb cascade to the pre-computed intermediate integrator states is performed at a multiple of the sampling frequency.

Abstract: A packaged semiconductor device includes an insulating material forming a side surface of the packaged semiconductor device. An integrated-circuit chip is embedded in the insulating material and includes a communication circuit. A wiring system is embedded in the insulating material and electrically couples the integrated-circuit chip with a plurality of package contact elements. A first communication pad is formed in the side surface and is operatively coupled to the communication circuit to enable signal exchange through the first communication pad.

Abstract: In an embodiment, a method is provided for controlling a level of a read current in a non-volatile memory that is powered by a supply voltage includes. A model current representative of an actual current able to flow during a readout through a read path of the memory is determined based on the value of the supply voltage. The model current is compared to a reference current having a reference value. A control signal is generated. The control signal is to control the generation of the read current having a level equal to the lowest value between a fraction of the value of the model current and the reference value.