Abstract: A method for manufacturing a cell of a non-volatile electrically erasable and programmable memory including a dual-gate MOS transistor. The method includes the steps of providing a semiconductor substrate covered with an insulating layer including a thinned down portion and having a first surface common with the substrate and a second surface opposite to the first surface; and incorporating nitrogen at the level of the second surface, whereby the maximum nitrogen concentration is closer to the second surface than to the first surface.

Abstract: A method and a circuit for detecting a radio-frequency signal, including at least one first MOS transistor with a channel of a first type, having its gate coupled to an input terminal capable of receiving said signal; a circuit for biasing the first transistor, capable of biasing it to a level lower than its threshold voltage; and a circuit for determining the average value of the current in the first transistor.

Abstract: The waveform of the signal varies according to the distance at which the signal was emitted, and several correlation signals are defined and correspond respectively to at least part of several sampled waveforms of the signal respectively emitted at several distances of different values so that the sum of the maxima of intercorrelations performed respectively between the various correlation signals and the various sampled waveforms is substantially constant over an interval including all the values of the distances. The correlation processing includes several elementary correlation processings respectively performed with the correlation signals and each delivering initial correlation values, as well as a summation of the homologous initial correlation values respectively delivered by the elementary correlation processings so as to obtain the correlation values.

Abstract: A method for cadence detection in a sequence of video fields is based on at least a search for cadence patterns in a sequence of bits representative of the motion in at least a part of the field from one field to another in the field sequence. The signaling of field skip and/or field repeat commands as applied to the fields in the field sequence is considered during the cadence detection operation so as to field skips and repeats.

Abstract: The pulse train of a signal is modulated by a DPIM modulation involving a discrete random time parameter. A first processing is performed on the signal to deliver a sampled signal. A second processing is performed on the sampled signal, comprising a correlation processing including at least one elementary correlation processing with a correlation mask corresponding to the shape of at least part of a sampled pulse, and delivering second information items. A third processing is performed for detecting the pulses following a first pulse by taking account of the position of the first pulse, on packets of second information items, which are separated by a duration related to the discrete random parameter.

Abstract: A CMOS imager includes a photosite array and a microlens array. The microlens array comprises microlenses of a first type and microlenses of a second type, the microlenses of first type being manufactured according to a first circular template having a first radius, the microlenses of second type being manufactured according to a second circular template having a second radius inferior to the first radius, and the first and second templates having overlap areas. One advantage is that the CMOS imager has a high fill rate.

Abstract: The present disclosure relates to a method for locating the iris in an image of an eye, comprising steps of locating the pupil in the image, of detecting positions of intensity steps of pixels located on a line passing through the pupil and transition zones between the iris and the cornea, on either side of the pupil, and of determining the center and the radius of a circle passing through the detected positions of the transitions.

Abstract: The programming of a read-only memory formed of MOS transistors, the programming being set by a mask for forming an insulating layer prior to the forming of contacts of active regions of the transistors. An interconnection structure and a read-only memory.

Abstract: The invention proposes a negative gain transconductance amplifier circuit (1) for capacitive load that includes: an RC serial circuit connected between an input terminal (E) of the amplifier circuit and a intermediate terminal (A); an amplification level connected between the intermediate terminal and an output terminal (S) designed to be connected to a capacitive load, and which includes: a first negative gain transconductance amplifier (2) connected via open loop between the intermediate terminal and the output terminal; a second negative gain transconductance amplifier (3) with characteristics that are notably identical to those of the first amplifier, connected via closed loop; its input and output are connected to the intermediate terminal via a resistance (R1).

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: A method for manufacturing a lens of a polymer material, comprises producing in the core of the lens or on the surface of the latter at least one opaque zone having an optical function, by locally degrading the molecular structure of the polymer material using a beam of laser light. Example application is provided in particular but not exclusively to CMOS imagers.

Abstract: A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element including a first magnetic layer portion substantially conformally covering the bottom of the recess and the recess portion with slanted sides and in contact, at the level of the bottom of the recess, with a conductive portion, a non-magnetic layer portion substantially conformally covering the first magnetic layer portion and a second magnetic layer portion covering the non-magnetic layer portion.

Abstract: A method for processing a scratched surface of a material that is transparent to electromagnetic radiation includes a step of depositing onto the scratched surface at least one layer of a polymer material having substantially the same optical index as the material having the scratched surface, so as to fill in the scratches, and a step of polymerizing the polymer material. The method may be applied to the manufacture of semiconductor wafers including imagers.

Abstract: A method for manufacturing a micro-module for capturing images having an imager and at least one lens, includes manufacturing at least one imager on a first plate of a semiconductor material, producing at least one optical zone to form a lens in at least one second plate of a transparent material, and of assembling the first and second plates so that the imager can receive light through the optical zone.

Abstract: A method manufactures a digital image sensor including at least one optical lens using a hardenable liquid or gelatinous material. The method includes depositing a calibrated volume of the material on a lens formation base using a tubular needle of a small diameter, so that the volume of material deposited has at least one convex part under the effect of interface energies, and hardening all or part of the volume of deposited material.

Abstract: The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.

Abstract: A device for decoding a direct sequence spread spectrum-encoded binary message includes a sampler that captures at least one sequence of binary samples corresponding to one bit of the transmitted message. The captured sequence of samples are applied to a filter matched to the spreading code used, thus making it possible to delete the spreading applied to the original message. The device further includes, at the output of the sampler, an error correction block including a memory storing a plurality of binary sequences corresponding to all of the possible values for a captured sequence of samples. A replacement circuit replaces the captured sequence of samples with the stored sequence, thereby minimizing the number of samples different from the captured sequence of samples, and allowing the stored sequence to be applied to the matched filter.

Abstract: A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.

Abstract: The invention relates to a production process for a flash memory from a semi-conductor substrate fitted with at least two adjacent rows of precursor stacks of floating gate transistors, the precursor stacks being at least partially covered by a protective resin and being separated by a formation zone for a source line. The process includes forming a trench in the formation zone for the source line by an attack of this zone and of the protective resin. The result of the attack step includes a deposit of residue from the resin below the precursor stacks. The residue deposit is removed. A source line is implanted in the formation zone below the precursor stacks. This process enables the time needed for erasing the memory to be reduced.

Abstract: The invention proposes a negative gain transconductance amplifier circuit (1) for capacitive load that includes: an RC serial circuit connected between an input terminal (E) of the amplifier circuit and a intermediate terminal (A); an amplification level connected between the intermediate terminal and an output terminal (S) designed to be connected to a capacitive load, and which includes: a first negative gain transconductance amplifier (2) connected via open loop between the intermediate terminal and the output terminal; a second negative gain transconductance amplifier (3) with characteristics that are notably identical to those of the first amplifier, connected via closed loop; its input and output are connected to the intermediate terminal via a resistance (R1).