Abstract: A device monitors at least one power switch which is series-mounted with a logic core between a first and a second potential. A connection point between the switch and logic core is carried to a third potential. The switch is biased by a biasing potential. The device includes a feedback control module mounted between first and second potentials which is capable of generating a set potential representative of the third potential variation. A biasing module of the power switch is mounted between the first and second potentials, and generates a biasing potential based on the set potential. The biasing potential linearly varies with the decrease of the third potential.

Abstract: A dual-mode smart card comprising several pads of physical contact with an external reader and two pads of connection to an antenna for a contactless operation, and comprising a voltage regulator capable of extracting from a radio frequency excitation reaching the antenna, a supply voltage of the chip's processing circuits, this regulator being controllable by a central circuit to be deactivated in the presence of a supply voltage on contacts of the chip.

Abstract: A bitwise addressing mode includes including the shaping of symbols of variable length during an operation for reading or writing a symbol in a bank of memories. The addressing is then done with the aid of a word address and of a bit pointer designating the start of the symbol in the word corresponding to the word address. A shift operation is performed during an operation of reading or of writing.

Abstract: An integrated circuit has at least one semiconductor device for storing charge that includes at least one elementary active component and at least one elementary storage capacitor. The device includes a substrate having a lower region containing at least one buried capacitive elementary trench forming the elementary storage capacitor, and an elementary well located above the lower region of the substrate and isolated laterally by a lateral electrical isolation region. The elementary active component is located in the elementary well or in and on the elementary well. The capacitive elementary trench is located under the elementary active component and is in electrical contact with the elementary well. In one preferred embodiment, the lateral electrical isolation region is formed by a trench filled with a dielectric material and has a greater depth than that of the elementary well. Also provided is a method for fabricating an integrated circuit that includes a semiconductor device for storing charge.

Abstract: A device for controlling an electroluminescent matrix display by successive selection of its lines, including a column control circuit having circuitry capable of placing, at the beginning of the selection of a line, the display column at a precharge voltage based on the operating voltage of the previous line, the column control circuit also having circuitry capable of modifying the precharge voltage according to the difference between luminance instructions of the previous line and those of the selected line.

Abstract: A device for shifting the level of a first signal of relatively low amplitude which is a function of a first supply voltage to a second signal of relatively high amplitude which is a function of a second supply voltage, comprising, between a first terminal of application of the second supply voltage and a first input terminal, a branch of two transistors of opposite types in series, having their junction point defining an output terminal, the respective control terminals of the transistors being connected to terminals of application of relatively high and low bias voltages by first resistive elements, a second input terminal, receiving the inverse of the signal applied on the first terminal, being connected to each of the control terminals of the transistors by first capacitive elements and the first input terminal being connected to each of the terminals of application of the bias voltages by second capacitive elements in series with second resistive elements.

Abstract: The invention concerns counting circuitry for providing a corrected count value based on the number of rising and falling edges of an input signal occurring during a reference time period, the counting circuitry comprising a counter (22) arranged to provide a first count value based on one of the number of said rising edges of said input signal occurring during said reference time period, and the number of said falling edges of said input signal occurring during said reference time period; characterized in that said counting circuitry further comprises adjustment circuitry (24-26) arranged to generate a corrected count value by determining the state of said input signal at the start time (70) and end time (72) of said reference time period, and adjusting said first count value if the state of said input signal at the start of said reference time period is different from the state of said input signal at the end of said reference time period.

Abstract: The invention relates to a circuit for reading a cell of a bit line, including first and second transistors for controlling the bit line and a reference line, respectively, a reference transistor connected to the second control transistor and a write transistor of the reference current connected to the first control transistor, for comparing the current of the bit line and the reference current, characterized in that a first intermediate transistor is connected to the write transistor parallel to the first control transistor, and in that a second intermediate transistor is connected between the gate and the drain of the reference transistor parallel to the second control transistor, and polarization transistors are connected in series, respectively, to the intermediate transistors so as to superimpose a current over the reference current.

Abstract: A method and circuit for displaying an image by activation of pixels of an array screen based on an image stored in digital form in memory point rows of a frame memory, having a stand-by mode that provides, at a frequency proportional to the display frequency, a cyclic succession of offset values; and for each row address of the frame memory, activating pixels of a screen line associated with said address offset by a same offset value based on the read states of the row associated with the address, and/or activating pixels of a screen line associated with the row address based on the read states of the frame memory row associated with the address offset by a same offset value.

Abstract: A device processes a received radio signal. Circuitry formulates voltage samples of the radio signal. Analog processing of those samples is performed. Then, digital processing is performed on the output of the analog processing. The circuitry for formulating voltage samples is configured to ensure a processing of the samples prior to the digital processing.

Abstract: A method and a circuit for protecting a transistor that controls the supply of an at least partially inductive load, including lowering the demagnetization voltage of the inductive load with respect to a demagnetization voltage set by a break-over component connected between a conduction terminal and the control terminal of the transistor.

Abstract: A method checks the state of a set of memory cells of a memory having memory cells arranged in a memory array, row and column decoders for selecting a memory cell, and a sense amplifier for supplying a state of the selected memory cell depending on whether the selected memory cell is conductive or non-conductive. The method includes features wherein all the memory cells of a set grouping together several memory cells are selected, and then simultaneously coupled to the sense amplifier, and the sense amplifier supplies a global state of all the selected memory cells to which it is coupled, if the latter are simultaneously non-conductive. Application is provided to the checking of a command for block-erasing a memory.

Abstract: A distributed phase shifter including: a first planar winding having its ends defining accesses in phase opposition; a second planar winding coupled with the first one and grounded by a first capacitive element; a third planar winding in a conductive level different from that receiving the first winding and electrically in series with the second winding; and a fourth planar winding, coupled with the third one in a conductive level different from that receiving the second winding, first ends of the third and fourth windings being connected by a capacitive element and their second ends being connected by another capacitive element, their first and second respective ends defining accesses in phase quadrature.

Abstract: An electronic circuit containing a processing unit for executing program instructions, including at least one unit for recognizing at least one first instruction operator in the program and for converting this first operator into another instruction operator, both operators being interpretable by the processing unit. A method for controlling the access to data by such a circuit.

Abstract: An integrated circuit including a buried layer of determined conductivity type in a plane substantially parallel to the plane of a main circuit surface, in which the median portion of this buried layer is filled with a metal-type material.

Abstract: The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.

Abstract: A processor for executing a Rijndeal algorithm which applies a plurality of encryption rounds to a data block array in order to obtain an array of identical size, each round involving a key block array and a data block substitution table, wherein said processor comprises: a first input register (102) containing an input data block column; an output register (111) containing an output data block column or an intermediate block column; a second input register (101) containing a key block column or the intermediate data blocks; a block substitution element (104) receiving the data one block at a time following the selection (103) thereof in the first register and providing, for each block, a column of blocks; an element (109) applying a cyclic permutation to the substitution circuit column blocks; and an Exclusive-OR combination element (110) combining the permutation circuit column blocks with the content of the second register, the result of said combination being loaded into the output register.

Abstract: A memory cell with at least two detectable states among which is an unprogrammed state, comprising, in series between two terminals of application of a read voltage, at least one first branch comprising: a pre-read stage comprising, in parallel, two switchable resistors having different values with a first predetermined difference; and a programming stage formed of a polysilicon programming resistor, a terminal of the programming resistor being accessible by a programming circuit capable of causing an irreversible decrease in its value.

Abstract: An integrated circuit including an assembly of functional blocks and an interconnection network formed of at least N levels of conductive tracks separated by conductive via levels, the interconnection network including a power supply network comprising a first assembly of substantially parallel rails placed at the N-th track level, and a second assembly of substantially parallel rails placed at the (N?1)-th track level under the first rail assembly, the rails of the first assembly being non-parallel to those of the second assembly, the power supply network further including, for each functional block, a third assembly of power supply rails placed at the (N?2)-th track level above the elements of the considered block, and in which the rails of the second assembly form an acute angle smaller than 80° with the rails of each third rail assembly.

Abstract: An LDPC decoder having a determined number of processing units operating in parallel, storage circuitry capable of containing first words containing a juxtaposition of messages of a first type, and second words containing a juxtaposition of messages of a second type, a message provision unit capable of providing each processing unit with a message of the first type or a message of the second type, and a message write unit capable of writing, into the storage circuitry, first words or second words. The message provision unit is capable of providing a message at a position in a word which depends on the word or the message write unit is capable of writing each message at a position in the word which depends on the word.