Abstract: In an embodiment, a voltage multiplier comprises an input node, an output node, and first and second control nodes for receiving first and second clock signals defining two commutation states. An ordered sequence of intermediate nodes is coupled between the input and output nodes and includes two ordered sub-sequences. Capacitors are coupled: between each odd intermediate node in the first sub-sequence and the first control node; between each even intermediate node in the first sub-sequence and the second control node; between each odd intermediate node in the second sub-sequence and a corresponding odd intermediate node in the first sub-sequence; and between each even intermediate node in the second sub-sequence and a corresponding even intermediate node in the first sub-sequence. The circuit comprises selectively conductive electronic components coupled to the intermediate nodes.

Abstract: MEMS ultrasonic transducer, MUT, device, comprising a semiconductor body with a first and a second main face, including: a modulation cavity extending into the semiconductor body from the second main face; a membrane body suspended on the modulation cavity and comprising a transduction membrane body and a modulation membrane body; a piezoelectric modulation structure on the modulation membrane body; a transduction cavity extending into the membrane body, the transduction membrane body being suspended on the transduction cavity; and a piezoelectric transduction structure on the transduction membrane body. The modulation membrane body has a first thickness and the transduction membrane body has a second thickness smaller than the first thickness. In use, the modulation membrane vibrates at a first frequency and the transduction membrane vibrates at a second frequency higher than the first frequency, to emit and/or receive acoustic waves at a frequency dependent on the first and the second frequencies.

Abstract: Electronic device comprising: a semiconductor body, in particular of Silicon Carbide, SiC, having a first and a second face, opposite to each other along a first direction; and an electrical terminal at the first face, insulated from the semiconductor body by an electrical insulation region. The electrical insulation region is a multilayer comprising: a first insulating layer, of a Silicon Oxide, in contact with the semiconductor body; a second insulating layer on the first insulating layer, of a Hafnium Oxide; and a third insulating layer on the second insulating layer, of an Aluminum Oxide.

Abstract: Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

Abstract: A system for measuring cardiac parameters uses a movements sensor to generate a seismocardiographic signal and a cardiac parameters calculation unit. The cardiac parameters calculation unit provides for generating an envelope signal correlated to the seismocardiographic signal; identifies, in the envelope signal, signal segments having a repetitive pattern; identifies, among the signal segments, pairs of successive peaks such that a first peak of each pair of successive peaks is a systolic peak and a second peak of each pair of successive peaks is a diastolic peak; and calculates a systolic period and a diastolic period for each pair of successive peaks.

Abstract: A method for providing an estimate of a time-of-flight between an ultrasonic signal emitted by a device and an ultrasonic echo signal returned by a target object hit by the ultrasonic signal and received at the device.

Abstract: A hardware secure element includes a processing unit and a receiver circuit configured to receive data comprising a command field and a parameter field adapted to contain a plurality of parameters. The hardware secure element also includes at least one hardware parameter check module configured to receive at an input a parameter to be processed selected from the plurality of parameters, and to process the parameter to be processed to verify whether the parameter has given characteristics. The hardware parameter check module has associated one or more look-up tables configured to receive at an input the command field and a parameter index identifying the parameter to be processed by the hardware parameter check module, and to determine for the command field and the parameter index a configuration data element.

Abstract: Provided is a circuit including a switching transistor having a control terminal configured to receive a control signal and having a current flow path therethrough. The switching transistor becomes conductive in response to the control signal having a first value. The current flow path through the switching transistor provides a current flow line between two nodes. In a non-conductive state, a voltage drop stress is across the switching transistor. The circuit comprises a sense transistor that is coupled to and a scaled replica of the switching transistor. The sense transistor has a sense current therethrough. The sense current is indicative of the current of the switching transistor. The circuit includes coupling circuitry configured to apply the voltage drop stress across the sense transistor in response to the switching transistor being non-conductive. In the non-conductive state, the voltage drop stress is replicated across both the switching transistor and the sense transistor.

Abstract: The present disclosure is directed to a detection method of a first or second state of a foldable electronic device including a first and a second hardware element tiltable to each other and accommodating a first and a second electrode which are in contact with each other when the foldable electronic device is in the first state and at a distance from each other otherwise. The detection method includes: acquiring a first and a second charge variation signal indicative of environmental electric/electrostatic charge variations detected by the first and second electrodes; generating a differential signal indicative of a difference between the first and the second charge variation signals; generating, as a function of the differential signal, one or more feature signals; and generating, as a function of the one or more feature signals, a contact signal indicative of the first or second states of the foldable electronic device.

Abstract: In accordance with an embodiment, a circuit is configured to vary an intensity of a drive current of a resistive heater element based on the digital control signal. The circuit includes and output circuit configured to control a respective slew rate and an electric energy dissipated in the resistive heater element independently of a resistance value of the resistive heater element.

Abstract: A multi-level pulser circuit comprises a set of first input pins for receiving respective positive voltage signals at different voltage levels, a set of second input pins for receiving respective negative voltage signals at different voltage levels, and a reference input pin configured to receive a reference voltage signal intermediate the positive voltage signals and the negative voltage signals. The circuit comprises an output pin configured to supply a pulsed output signal. The circuit further comprises control circuitry configured to selectively couple the output pin to one of the first input pins, the second input pins and the reference input pin to generate the pulsed output signal at the output pin.

Abstract: An integrated circuit includes a control circuit, a primary sensor device coupled to the control circuit, and a plurality of groups of secondary sensor devices coupled to the primary sensor device. The primary sensor device receives a master clock signal from the control device and outputs, to each group of secondary sensor devices, a respective secondary clock signal with a frequency lower than the primary clock signal. The primary sensor device generates primary sensor data. The primary sensor device receives secondary sensor data from each group of secondary sensor devices. The primary sensor device combines the primary sensor data and all of the secondary sensor data into a sensor data stream with a time division-multiplexing scheme and outputs the sensor data stream to the control circuit.

Abstract: A system includes inertial sensors and a GPS. The system generates a first estimated vehicle velocity based on motion data and positioning data, generates a second estimated vehicle velocity based on the processed motion data and the first estimated vehicle velocity, and generates fused datasets indicative of position, velocity and attitude of a vehicle based on the processed motion data, the positioning data and the second estimated vehicle velocity. The generating the second estimated vehicle velocity includes: filtering the motion data, transforming the filtered motion data in a frequency domain based on the first estimated vehicle velocity, generating spectral power density signals, generating an estimated wheel angular frequency and an estimated wheel size based on the spectral power density signals, and generating the second estimated vehicle velocity as a function of the estimated wheel angular frequency and the estimated wheel size.

Abstract: SiC-based MOSFET electronic device comprising: a solid body; a gate terminal, extending into the solid body; a conductive path, extending at a first side of the solid body, configured to be electrically couplable to a generator of a biasing voltage; a protection element of a solid-state material, coupled to the gate terminal and to the conductive path, the protection element forming an electronic connection between the gate terminal and the conductive path, and being configured to go from the solid state to a melted or gaseous state, interrupting the electrical connection, in response to a leakage current through the protection element greater than a critical threshold; a buried cavity in the solid body accommodating, at least in part, the protection element.

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

Abstract: A trace-data preparation circuit including a filtering circuit to receive traced memory-write data and a First In First Out buffer coupled with the filtering circuit to receive selected memory-write data filtered by the filtering circuit. The trace-data preparation circuit further including a data compression circuit to provide packaging data to a packaging circuit that groups the selected memory-write data.

Abstract: An antenna-in-package semiconductor device includes a semiconductor chip coupled to a planar substrate. An encapsulation body encapsulates the semiconductor chip. The encapsulation body includes a through cavity extending to the planar substrate. A rectilinear wire antenna is mounted within the through cavity and extends, for instance from the planar substrate, along an axis that is transverse to a surface of the planar substrate to which the semiconductor chip is coupled. The rectilinear wire antenna is electrically coupled to the semiconductor chip. An insulating material fills the cavity to encapsulated the rectilinear wire antenna.

Abstract: A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.

Abstract: In an embodiment, a non-volatile memory device includes a memory array including a plurality of memory portions, each memory portion having a respective plurality of memory cells arranged in rows and columns, wherein the memory portions are arranged in groups, each group of memory portions having a plurality of respective memory portions arranged in a row and a plurality of respective wordlines that extend through the respective memory portions, and wherein the memory cells of the memory portions of the group are coupled to the respective wordlines and a row decoder including a pre-decoding stage configured to execute a selection, in which it selects a wordline that extends through a group of memory portions and deselects other wordlines that extend through the group of memory portions, and a subsequent deselection, in which it deselects all the wordlines that extend through the group of memory portions, wherein the row decoder further includes, for each group of memory portions, a shared pull-up stage config

Abstract: A MEMS sensing device for sensing microparticles in an environment external to the MEMS sensing device is provided.