Abstract: A device for transmission of at least one high-frequency signal includes at least one first electrically-conductive track formed inside and/or on top of a flexible substrate.

Abstract: A calibration scheme is used to control PLL bandwidth and contain its spread. In open loop, the VCO control voltage is swept over a range of values and VCO output frequency is measured at each control voltage level. The gain KVCO is determined for each measured output frequency and a corresponding current magnitude for the variable magnitude charge pump is calculated from a ratio of a constant to the gain KVCO and correlated in a look-up table to the measured output frequency. Once calibration is completed, the PLL loop is closed and a calculated current magnitude is fetched from the look-up table based on a desired output frequency for the PLL circuit. The variable magnitude charge pump circuit is then controlled to generate a charge pump current with a magnitude corresponding to the fetched charge pump current magnitude.

Abstract: An integrated circuit includes at least a first standard cell framed by two second standard cells. The three cells are disposed adjacent to each other, and each standard cell includes at least one NMOS transistor and at least one least one PMOS transistor located in and on a silicon-on-insulator substrate. The at least one PMOS transistor of the first standard cell has a channel including silicon and germanium. The at least one PMOS transistor of each second standard cell has a silicon channel and a threshold voltage different in absolute value from the threshold voltage of said at least one PMOS transistor of the first cell.

Abstract: A method of manufacturing semiconductor devices, such as QFN/BGA flip-chip type packages, arranging on a leadframe one or more semiconductor chips or dice having a first side facing towards the leadframe and electrically coupled therewith and a second side facing away from the leadframe. The method also includes molding an encapsulation on the semiconductor chip(s) arranged on the leadframe, where the encapsulation has an outer surface opposite the leadframe and comprises laser direct structuring (LDS) material. Laser direct structuring processing is applied to the LDS material of the encapsulation to provide metal vias between the outer surface of the encapsulation and the second side of the semiconductor chip(s) and as well as a metal pad at the outer surface of the encapsulation.

Abstract: An indirect time of flight sensor includes a matrix of pixels, wherein each pixel includes at least two controllable transfer devices. First conductive lines transmit first control signals to the transfer devices, these first signals being provided by a first circuit. A device is provided for illuminating a scene that is divided into at least two first areas. The device successively illuminates each first area. The matrix is similarly divided into at least two second areas. The matrix and illumination device are disposed such that each first area corresponds to one second area. The first circuit provides different first signals to the different second areas.

Abstract: An electronic system includes at least one first electronic circuit and a voltage regulator connected electrically in parallel between first and second nodes, where the voltage regulator is configured to generate a regulated voltage at the second node. At least one second electronic circuit is connected between the second node and a third node providing a reference for the regulated voltage.

Abstract: An integrated circuit includes a circuit module storing sensitive data. An electrically conductive body at a floating potential is located in the integrated circuit and holds an initial amount of electric charge. In response to an attack attempting to access the sensitive data, electric charge is collected on the electrically conductive body. A protection circuit is configured to ground an output of the circuit module, and thus preclude access to the sensitive data, in response to collected amount of electric charge on the electrically conductive body differing from the initial amount and exceeding a threshold.

Abstract: Disclosed herein is a bridge rectifier and associated control circuitry collectively forming a “regtifier”, capable of both rectifying an input time varying voltage as well as regulating the rectified output voltage produced. To accomplish this, the gate voltages of transistors of the bridge rectifier that are on during a given phase may be modulated via analog control (to increase the on-resistance of those transistors) or via pulse width modulation (to turn off those transistors prior to the end of the phase). Alternatively or additionally, the transistors of the bridge rectifier that would otherwise be off during a given phase may be turned on to help dissipate excess power and thereby regulate the output voltage. A traditional voltage regulator, such as a low-dropout amplifier, is not used in this design.

Abstract: A method of testing integrated circuit die for presence of a crack includes performing back end integrated circuit fabrication processes on a wafer having a plurality of integrated circuit die, the back end fabrication including an assembly process. The assembly process includes a) lowering a tip of a first manipulator arm to contact a given die such that pogo pins extending from the tip make electrical contact with conductive areas on the given die so that the pogo pins are electrically connected to a crack detector on the given die, b) picking up the given die using the first manipulator arm, and c) performing a conductivity test on the crack detector using the pogo pins to determine presence of a crack in the given die that extends from a periphery of the die, through a die seal ring of the die, and into an integrated circuit region of the die.

Abstract: An optical module includes an optical detector, laser emitter, and first and second support structures, each carried by a substrate. An optical layer includes first and second fixed portions carried by the support structures, a movable portion affixed between the fixed portions by a spring structure, and a lens system carried by the movable portion, the lens system including an objective lens and a beam shaping lens. The optical layer includes a comb drive with a first comb structure extending from the first fixed portion to interdigitate with a second comb structure extending from the movable portion, a third comb structure extending from the second fixed portion to interdigitate with a fourth comb structure extending from the movable portion, and actuation circuitry applying voltages to the comb structures to cause the movable portion of the optical layer to oscillate back and forth between the fixed portions.

Abstract: Current absorption management for an electronic fuse coupled between an electrical supply source node and an electrical load node selectively controls a high current electronic switch and a low current electronic switch coupled in parallel between the electrical supply source node and the electrical load node. The high current and low current electronic switches are alternatively actuated: in a first mode where the high current electronic switch is turned on and the low current electronic switch is turned off, and in a second mode where the high current electronic switch is turned off and the low current electronic switch is turned on. Change to the second mode may be made in response to a standby state or a sensing of a lower current in the electrical load. Conversely, change to the first mode may be made in response to a sensing of a higher current in the electrical load.

Abstract: A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.

Abstract: An integrated circuit device includes a metal contact and a passivation layer extending on a sidewall of the metal contact and on first and second surface portions of a top surface of the metal contact. The passivation layer is format by a stack of layers including: a tetraethyl orthosilicate (TEOS) layer; a Phosphorus doped TEOS (PTEOS) layer on top of the TEOS layer; and a Silicon-rich Nitride layer on top of the PTEOS layer. The TEOS and PTEOS layers extend over the first surface portion, but not the second surface portion, of the top surface of the metal contact. The Silicon-rich Nitride layer extends over both the first and second surface portions, and is in contact with the second surface portion.

Abstract: An electronic device includes a modulator-demodulator circuit, a first integrated circuit for implementing a first subscriber module; and a second integrated circuit for implementing a second subscriber identification module. A data transmit-receive terminal of the first integrated circuit and a data transmit-receive terminal of the second integrated circuit are connected to a data transmit-receive terminal of the modulator-demodulator circuit. Reset terminals of the modulator-demodulator circuit and the first integrated circuit are connected so that the modulator-demodulator circuit can control deactivation of the first integrated circuit. A reset terminal of the second integrated circuit and an input/output terminal of the first integrated circuit are connected so that the first integrated circuit can control deactivation of the second integrated circuit.

Abstract: A serial-connection is tested by transmitting a PRBS generated using a kth-order monic-polynomial from transmission-circuitry to reception-circuitry, and determining operation is proper based upon the PRBS received. The PRBS is formed by generating x intermediate-words of the PRBS, x being a result of an integer-divide between a total number of bits in the PRBS and a bit-width of a serializer that transmits the PRBS, generating a leading-word of the PRBS as having first y-bits of the PRBS as its LSBs, y being based upon a modulo-divide between the total number of bits in the PRBS and x, and generating a trailing-word of the PRBS as having last z-bits of the PRBS as its MSBs, z being based upon a difference between a result of the modulo-divide and y. The PRBS is transmitted sequentially as the leading-word of the PRBS, the intermediate-words of the PRBS, and the trailing-word of the PRBS.

Abstract: A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.

Abstract: Disclosed herein is an optical module including a substrate, with an optical detector, laser emitter, and support structure being carried by the substrate. An optical layer includes a fixed portion carried by the support structure, a movable portion affixed between opposite sides of the fixed portion by a spring structure, and a lens system carried by the movable portion. The movable portion has at least one opening defined therein across which the lens system extends, with at least one supporting portion extending across the at least one opening to support the lens system. The optical layer further includes a MEMS actuator for in-plane movement of the movable portion with respect to the fixed portion.

Abstract: A molded carrier is formed by a unitary body made of a laser direct structuring (LDS) material and includes a blind opening with a bottom surface. The unitary body includes: a floor body portion defining a back side and the bottom surface of the blind opening and an outer peripheral wall body portion defining a sidewall surface of the blind opening. LDS activation followed by electro-plating is used to produce: a die attach pad and bonding pad at the bottom surface; land grid array (LGA) pads at the back side; and vias extending through the floor body portion to make electrical connections between the die attach pad and one LGA pad and between the bonding pad and another LGA pad. An integrated circuit chip is mounted to the die attach pad and wire bonded to the bonding pad. A wafer-scale manufacturing process is used to form the molded carrier.

Abstract: A method of operating a MEMS device includes generating a MEMS drive signal, and generating and modifying the MEMS drive signal based upon a control signal to produce a modified drive signal. The method further includes generating the control signal by determining when a feedback signal from the MEMS device is at its peak value, comparing the peak value to a desired value when the feedback signal is as its peak, and generating the control signal depending upon whether the peak value is at least equal to a desired value. The modification of the MEMS drive signal based upon the control signal to produce the modified drive signal includes skipping generation of a next pulse of the modified drive signal when the control signal indicates the peak value is at least equal to the desired value.

Abstract: An electronic chip supports an optical device and electric connection zones. An insulating coating coats the electronic chip, covers the electric connection zones and exposes the optical device. An optical plugging element is at least partly fastened onto a first face of the insulating coating and is optically coupled to the optical device. Vias pass through the insulating coating from its first face to a second face opposite to the first face. Inner walls of the vias support electrically conductive paths connected to the electric connection zones of the electronic chip by electrically conductive tracks arranged on the first face of the insulating coating. The electrically conductive paths of the vias further have ends protruding onto the second face of the insulating coating.