Abstract: A memory device with a sense amplifier enable line having the same resistance and capacitance as a local wordline. The sense amplifier enable line is made out of the same material, has the same layout, and has the same load placed on as a local wordline, this will make the sense amplifier enable line have the same resistance, capacitance, and load characteristics as a local wordline. The load on the sense amplifier enable line is a combination of the sense amplifier enable line operational circuitry and sense amplifier enable line load circuit.

Abstract: A method is provided for forming a landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of conductive regions are formed over a substrate. A polysilicon landing pad is formed over at least one of the plurality of conductive regions. After the polysilicon is patterned and etched to form the landing pad, tungsten is then selectively deposited over the polysilicon to form a composite polysilicon/tungsten landing pad which is a good etch stop, a good barrier to aluminum/silicon interdiffusion and a good conductor.

Abstract: A driver circuit with an amplifier operated in a switching mode has threshold detectors with devices to compare the amplifier input and output voltage respectively to predetermined minimum and maximum levels representing fully off and fully on conditions for the driver circuit. The circuit provides signals to enable the amplifier to draw current from a supply only during transitions between the threshold levels and to otherwise disable the amplifier. The circuit is beneficial particularly when operating the amplifier from a voltage supply of very limited current capability, such as a charge pump voltage in an integrated circuit. The switching mode amplifier can be applied in high performance driver integrated circuits alone or in combination with innovative techniques for slew rate control and for preslewing the amplifier output that also provide high performance in compact circuit configurations.

Abstract: A voltage ramp generator for a driver circuit is provided to give an output that is highly linear between zero and a maximum voltage has a combination of current sources or generators for charging and discharging a capacitor, with discharging performed by sequencing two different types of current sources. A first current source on the discharge side of the capacitor has transistors in cascode connected current mirrors and takes the capacitor voltage to a low value but not as low as zero. A second current source of a basic or simple current mirror then takes the capacitor voltage substantially to zero. The voltage ramp generator meets the requirements of high performance, integrated, driver circuits, particularly for achieving complete turn-off of a power device such as a DMOS transistor in a high side cascoded transistors goes up to a threshold near the full supply driver.

Abstract: An SRAM memory cell having first and second transfer gate transistors. The first transfer gate transistor includes a first source/drain connected to a bit line and the second transfer gate transistor has a first source/drain connected to a complement bit line. Each transfer gate transistor has a gate connected to a word line. The SRAM memory cell also includes first and second pull-down transistors configured as a storage latch. The first pull-down transistor has a first source/drain connected to a second source/drain of said first transfer gate transistor; the second pull-down transistor has a first source/drain connected to a second source/drain of said second transfer gate transistor. Both first and second pull-down transistors have a second source/drain connected to a power supply voltage node.

Abstract: A start write sensing circuit for sensing a start of a write is coupled to a write simulation circuit. The write simulation circuit preferably includes a memory cell replicate to mimic the amount of time required for writing data to the memory cell. The state of the data stored in the memory cell replicate is changed upon the write sensing circuit sensing the start of a write. The memory cell replicate is preferably constructed using the same structure, design, and process as the memory cells of the array so as to accurately simulate the time required for writing data to a memory cell in the array. Upon the write to the memory cell replicate being completed, a write termination signal is generated for terminating the write signal. The write termination signal also is a reset signal for resetting circuits of the array to prepare for the next cycle, whether it be a read or a write.

Abstract: An isolation gate structure is formed between active areas on a P-type semiconductor substrate. The isolation structure includes a thick gate oxide layer over which is formed a P-doped polycrystalline silicon layer. The polycrystalline silicon layer is electrically connected to the substrate, by buried contact if desired, and can further be electrically connected to a source region formed within the active area. The polycrystalline silicon layer and substrate are connected to ground potential, thus preventing current flow between active areas.

Abstract: A CMOS device architecture which includes substrate-gated inverted PMOS transistors, as well as bulk NMOS. The inverted-PMOS channels are formed in a different layer from the NMOS gates, and these layers may even have different compositions. Moreover, the NMOS and inverted-PMOS devices have different gate oxide layers, so the thicknesses can be independently optimized. The drain underlap of the inverted device is defined by a patterning step, so it can be increased for high-voltage operation if desired.

Abstract: A process forms a MOS-technology power device including a semiconductor material layer of a first conductivity type and a body region disposed therein. The body region includes a heavily doped region of a second conductivity type, a lightly doped region of the second conductivity type and a heavily doped region of the first conductivity type. The process includes forming an insulated gate layer on portions of the surface of the semiconductor material layer to leave selected portions of the semiconductor material layer exposed. A dopant of the second conductivity type is implanted twice at different concentrations and energies into the selected regions of the semiconductor material layer. The implanted ions are thermally diffused to form body regions, each body region including a heavily doped region substantially aligned with the edges of the insulated gate layer, and a lightly doped region formed by lateral diffusion of the first dopant under the insulated gate layer.

Abstract: A circuit for driving a voice coil motor used to position the heads of a disk drive is disclosed. The circuit consists of a an H-bridge circuit, a controller, and a feedback loop. The feedback loop prevents the BEMF from driving a voltage on the voice coil motor above the supply voltage.

Abstract: An acoustic feedback suppression system, particularly for auxiliary ringers in socket telephone systems, comprising a first terminal and a second terminal of a telephone line, an internal ringer, and an auxiliary ringer that is connected between the first and second telephone lines. The system comprises an activation circuit adapted to activate first and second switching circuits to reduce the voltage at the terminals of the auxiliary ringer, the activation circuit being controlled by an activation signal generated by a control and signaling circuit when a user dials a telephone number.

Abstract: An electronic system that contains a first device that requires a memory interface and video and/or audio decompression and/or compression device that shares a memory interface and memory with the first device while still permitting the video and/or audio decompression and/or compression device to operate in real time is disclosed.

Abstract: A method is provided for forming an improved device dielectric of a semiconductor integrated circuit, and an integrated circuit formed according to the same. For scaling geometries for use in the submicron regime, a composite dielectric layer used as a device dielectric is formed over a plurality of active areas adjacent to a field oxide region. The composite dielectric layer is formed before the field oxide region is formed and comprises a non-porous silicon nitride layer. The non-porous silicon nitride layer preferably comprises a thin deposited silicon nitride layer overlying a thin nitridized region of the substrate. The silicon nitride layer is partially oxidized during the subsequent formation of a field oxide region between the plurality of active areas. An oxide layer may be formed over the silicon nitride layer before the formation of the field oxide region which will then be densified during the field oxide formation.

Abstract: A telephone interface circuit with impedance termination during call pauses, comprising first and second terminals to connect to a telephone line and a line termination branch connected to the first terminal across a decoupling capacitor, and to the second terminal. The line termination branch includes an intersection node, a first switch and a first impedance resistor between the first terminal and the intersection node, and a second switch and a second impedance resistor between the second terminal and the intersection node. The intersection node is connected to ground across a third switch. The first switch, the second switch, and the third switch are controlled by a control unit by first, second and third control lines, respectively. The telephone interface circuit further comprises a ring signal detector that is connected to a microprocessor unit capable of activating the control unit in an interval in which the circuit must be terminated for CLID (Calling Line IDentification) transmission.

Abstract: A plastic pin support of a plastic PGA package is used to hold conductor pins in alignment, for electrical contact, with a printed circuit board and a socket. The printed circuit board is mounted on the plastic pin support which is electrically connected to respective conductor pins of the plastic pin support. A first adhesive layer, containing silver fillers, connects a silicon chip housed in the plastic PGA package to a heat sink and conducts heat from the silicon chip to the heat sink. The first adhesive layer also absorbs thermal expansion variations between the silicon chip and the heat sink during thermal cycles. A second adhesive layer connects the printed circuit board to the heat sink.

Abstract: The present invention is directed to a method and apparatus for testing integrated circuits using a tester with a frequency limitation lower than what is needed to fully test the integrated circuit. Clock signals, each lower than that needed to test an integrated circuit at speed, are generated by a tester. These clock signals are connected to separate output pins of the integrated circuit. At least two of the input signals are out of phase with each other. The input clock signals are combined to create a test clock signal with a higher frequency, thus allowing the integrated circuit to be tested at its normal, operating frequency. A toggle signal may be provided to an additional pin on the integrated circuit. Use of the toggle signal allows test data to be written at the maximum frequency of the integrated circuit. The present invention does not create any significant delay during normal operation of the integrated circuit, and also does not create any significant layout penalty.

Abstract: The cross-sectional area of a thin-film transistor (TFT) is decreased in order to minimize bitline to supply leakage of the TFT. This is accomplished by utilizing a spacer etch process to manufacture a TFT having a very narrow and thin channel in a controllable manner. The spacer dimensions of the TFT may be adjusted by simply modifying the thicknesses of the poly gate and the channel poly. The channel thickness is limited by the thickness of the deposited channel polysilicon which may be as thin as approximately 300 .ANG. to 500 .ANG., and the channel width of the TFT corresponds to the height of the spacer etched along the polysilicon gate of the device which may be as small as approximately 0.15 to 0.25 .mu.m.

Abstract: A particular encoding scheme for encoding four bit values into six-bit symbols selects from the table below the six-bit symbol corresponding to a particular four bit value:______________________________________ Binary 3 of 6 code value symbol lsb msb lsb msb p q r s t u y- v w z- ______________________________________ 0 0 0 0 0 1 1 0 1 0 1 0 0 0 1 0 1 0 0 1 0 1 0 0 0 1 1 0 0 1 1 1 0 0 1 1 0 0 0 1 0 0 1 0 0 0 1 1 0 1 1 0 1 0 1 0 1 1 0 0 0 1 1 0 0 1 1 1 0 0 1 1 1 0 1 1 0 1 0 0 0 0 0 1 0 0 1 0 1 1 1 0 0 1 1 0 0 0 1 1 0 1 0 1 0 1 0 0 1 1 1 1 0 1 1 1 0 0 1 0 0 0 1 1 0 0 1 1 1 0 1 0 1 1 1 0 0 1 1 0 0 1 1 1 0 1 0 1 1 0 1 1 1 1 1 0 0 1 0 1 ______________________________________

Abstract: A socketed integrated circuit packaging system, including a packaged integrated circuit and a socket therefor, is disclosed. The integrated circuit package includes a device circuit board to which a thermally conductive slug is mounted; the underside of the device circuit board has a plurality of lands arranged in an array. The integrated circuit chip is mounted to the slug, through a hole in the device circuit board, and is wire-bonded to the device circuit board and thus to the lands on the underside. The socket is a molded frame, having a hole therethrough to receive the conductive slug of the integrated circuit package; the socket may also have its own thermally conductive slug disposed within the hole of the frame. The socket has spring contact members at locations matching the location of the lands on the device circuit board. The integrated circuit package may be inserted into the socket frame, held there by a metal or molded clip.

Abstract: A CMOS device architecture which includes substrate-gated inverted PMOS transistors, as well as bulk NMOS. The inverted-PMOS channels are formed in a different layer from the NMOS gates, and these layers may even have different compositions. Moreover, the NMOS and inverted-PMOS devices have different gate oxide layers, so the thicknesses can be independently optimized. The drain underlap of the inverted device is defined by a patterning step, so it can be increased for high-voltage operation if desired.