Abstract: A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.

Abstract: An apparatus includes at least one detector configured to receive return light from an object within a detector field of view the light generated by a light source. The detector includes first and second photosensitive regions configured to receive the return light from the light source. At least one non-photosensitive region is included, and the first and second photosensitive regions are separated by the at least one non-photosensitive region. The at least one non-photosensitive region is associated with one of the first or second photosensitive regions.

Abstract: A photovoltaic power generation plant includes a plurality of photovoltaic generators cooperative in producing photovoltaic power. Coupled with the photovoltaic generators in the plurality of photovoltaic generators are respective sensor devices, the sensor devices including sensor circuits of the individual current-to-voltage characteristics of the photovoltaic generators. The sensor circuits in the sensor devices can be activated to sense the individual current-to-voltage characteristics of the photovoltaic generators, with the individual current-to-voltage characteristic being indicative of the functionality of each photovoltaic generator.

Abstract: A method of differential self-capacitance measurement is used to enhance a signal-to-noise ratio of sense lines in a touch panel display, thereby improving touch sensor accuracy. The differential self-capacitance measurement is implemented for a touch panel using charge sharing between adjacent sense lines of the touch panel matrix. Sequential differential self-capacitance measurements can be compared with one another by computing the difference |CS1?CS2|?|CS2?CS1| to sense a change caused by an intervening event. By scanning the entire touch panel matrix, events can be tracked across the touch panel.

Abstract: The invention concerns a measurement unit including: an electric ambient energy recovery generator; an element of capacitive storage of the electric energy generated by the generator; an electric battery; a first branch coupling an output node of the generator to a first electrode of the capacitive storage element; a second branch coupling a first terminal of the battery to the first electrode of the capacitive storage element; and an active circuit capable of transmitting a radio event indicator signal each time the voltage across the capacitive storage element exceeds a first threshold, wherein, in operation, the capacitive storage element simultaneously receives a first charge current originating from the generator via the first branch and a second charge current originating from the battery via the second branch.

Abstract: An input node is configured to receive a supply signal which may be of a first polarity or a second polarity opposite the first polarity. A high input current circuit couples the input node to an output node through at least one power transistor having a control electrode. A low input current circuit couples a supply current from the input node to control circuit configured to control the power transistor. A circuit is provided to detect polarity reversal with respect to the supply signal. A protection circuit for the low input current circuit operates to decouple the control circuit from the input node if the supply signal has the second polarity. A protection circuit for the high input current circuit operates to short-circuit the control electrode of the power transistor to the current path provided by the power transistor between the input node and the output node.

Abstract: A wordline coupled to a memory cell is selected in connection with performing a read/write operation at the memory cell. A wordline signal is asserted on the selected wordline. The assertion of the wordline signal has a leading edge and a trailing edge and, between the leading edge and trailing edge, a series of wordline underdrive pulses. Each wordline underdrive pulse causes a wordline voltage to fall from a first voltage level to a second voltage level and then rise from the second voltage level to the first voltage level. The first and second voltage levels are both greater than a ground voltage of the memory cell.

Abstract: A circuit includes a frequency detector generating a comparison signal as a function of a comparison between a reference signal and a feedback signal. An oscillator generates an output signal as a function of the comparison signal. A frequency divider, in operation, divides the output signal by a division value to produce the feedback signal as having a frequency that is a multiple of a frequency of the reference signal. A frequency counter circuit measures the frequency of the reference signal and generates a count signal based thereupon. A control circuit adjusts the division value used by the frequency divider, in operation, based upon the count signal.

Abstract: A sub-bandgap reference voltage generator includes a reference current generator generating a reference current (proportional to absolute temperature), a voltage generator generating an input voltage (proportional to absolute temperature) from the reference current, and a differential amplifier. The differential amplifier is biased by the reference current and has an input receiving the input voltage and a resistor generating a voltage proportional to absolute temperature summed with the input voltage to produce a temperature insensitive output reference voltage. The reference current generator may generate the reference current as a function of a difference between bias voltages of first and second transistors.

Abstract: An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunneling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

Abstract: An integrated circuit includes a memory cell incorporating an antifuse device. The antifuse device includes a state transistor having a control gate and a second gate that is configured to be floating. A dielectric layer between the control gate and the second gate is selectively blown in order to confer a broken-down state on the antifuse device where the second gate is electrically coupled to the control gate for storing a first logic state. Otherwise, the antifuse device is in a non-broken-down state for storing a second logic state.

Abstract: The thinning of a semiconductor substrate of an integrated circuit from a back face is detected using the measurement of a physical quantity representative of the resistance between the ends of two electrically-conducting contacts situated at an interface between an insulating region and an underlying substrate region. The two electrically-conducting contacts extend through the insulating region to reach the underlying substrate region.

Abstract: In accordance with an embodiment, a method of operating an electronic system includes detecting an incoming transmission on a power line, and modifying a switching behavior of a switched-mode power supply coupled to the power line upon detecting the incoming transmission. Modifying reduces the level of interference produced by the switched-mode power supply.

Abstract: In accordance with an embodiment, a method of operating an electronic system includes detecting an incoming transmission on a power line, and modifying a switching behavior of a switched-mode power supply coupled to the power line upon detecting the incoming transmission. Modifying reduces the level of interference produced by the switched-mode power supply.

Abstract: The present disclosure is directed to an image sensor including a pixel array of both range pixels and color pixels. Each range pixel (or range pixel area) may be associated with multiple adjacent color pixels, with each side of the range pixel immediately adjacent to at least two color pixels. The association between the range pixels and the color pixels may be dynamically configurable. The readings of a range pixel(s) and the associated color pixels may be integrated together in the generation of a 3D image.

Abstract: A circuit includes a test data input (TDI) pin receiving a test data input signal, a test data out (TDO) pin outputting a test data output signal, and debugging test access port (TAP) having a test data input coupled to the TDI pin and a bypass register having an input coupled to the test data input of the debugging TAP. A multiplexer has inputs coupled to the TDI pin and the debugging TAP. A testing TAP has a test data input coupled to the output of the multiplexer, and a data register having an input coupled to the test data input of the testing TAP. The multiplexer switches so the test data input signal is selectively coupled to the input of the data register of the testing TAP so the output of the debugging TAP is selectively coupled to the input of the data register of the testing TAP.

Abstract: A method for activation of a payment card includes accessing a remote computer server of a card issuer to input card activation information, storing a unique code in the payment card having a contactless readable interface and in the remote computer server, the unique code corresponding to the payment card, and reading the unique code by a user terminal having a corresponding contactless interface. The method includes sending the unique code from the user terminal to the remote computer server, and upon verification of the unique code at the remote computer server, generating and sending an activation code to the user terminal and supplying access to an activation code input mask corresponding to the payment card. The method includes that upon submission of the activation code through the activation code input mask, comparing the submitted activation code with the generated activation code and, when matching, activating the payment card.

Abstract: A micromechanical device includes a fixed structure, a mobile portion rotatable about a first rotation axis, and a first actuation structure arranged between the fixed structure and the mobile portion to enable rotation of the mobile portion about the first rotation axis. The mobile portion includes a supporting structure, a tiltable platform rotatable about a second rotation axis, transverse to the first rotation axis, and a second actuation structure coupled between the tiltable platform and the supporting structure. Stiffening elements are arranged between the supporting structure and the fixed structure. The micromechanical device may be used within a picoprojector.

Abstract: A hybrid analog-digital pixel circuit is fabricated on two wafers. A first wafer includes the analog pixel circuitry and a second wafer includes the digital control and processing circuitry. Externally accessible contact structures for electrically interconnecting the two wafers are arranged in groups. Each group includes externally accessible contact structures for carrying signals associated solely with operation of a corresponding pixel.

Abstract: A switching amplifier, such as a Class D amplifier, includes a current sensing circuit. The current sensing circuit is formed by replica loop circuits that are selectively coupled to corresponding output inverter stages of the switching amplifier. The replica loop circuits operated to produce respective replica currents of the output currents generated by the output inverter stages. A sensing circuitry is coupled to receive the replica currents from the replica loop circuits and operates to produce an output sensing signal as a function of the respective replica currents.