Abstract: Disclosed herein is a touch screen controller including input circuitry operating a touch screen, and processing circuitry cooperating with the input circuitry to acquire mutual touch data and self touch data from the touch screen, sum values of the mutual touch data to produce mutual sums, normalize the mutual sums and the self touch data, and calculate differences between the normalized self touch data and the normalized mutual sums. The touch screen controller enters into a floating mode if a largest difference that is positive is greater than a positive difference threshold and if a smallest difference value that is negative is less than a negative difference threshold, but enters a non-floating mode if the largest difference that is positive is less than the positive difference threshold or if the smallest difference value that is negative is less than the negative difference threshold.

Abstract: A non-porous dielectric barrier is provided between a porous portion of a dielectric region and an electrically conductive element of an interconnect portion of an integrated circuit. This non-porous dielectric barrier protects the integrated circuit from breakdown of the least one dielectric region caused by electrical conduction assisted by the presence of defects located in the at least one dielectric region.

Abstract: Described herein is a video projection system including an optical module with at least one collimated light source to generate a light beam and at least one movable mirror to reflect the light beam. The video projection system also includes a video source producing a digital video stream in accordance with a clock signal and a movement synchronization signal, as well as a projector system. The projector system includes mirror control circuitry configured to control movement of the at least one movable mirror in accordance with the clock signal and the movement synchronization signal, a light source controller configured to control generation of collimated light by the at least one collimated light source, and processing circuitry configured to receive the digital video stream, and to generate control signals for the light source controller based upon the received digital video stream.

Abstract: A microelectromechanical device includes: a supporting structure; two sensing masses, movable with respect to the supporting structure according to a first axis and a respective second axis; a driving device for maintaining the sensing masses in oscillation along the first axis in phase opposition; sensing units for supplying sensing signals indicative of displacements respectively of the sensing masses according to the respective second axis; processing components for combining the sensing signals so as to: in a first sensing mode, amplify effects on the sensing signals of concordant displacements and attenuate effects of discordant displacements of the sensing masses; and in a second sensing mode, amplify effects on the sensing signals of discordant displacements and attenuate effects of concordant displacements of the sensing masses.

Abstract: A support substrate has a face above which at least one electronic component is fixed. A peripheral area of the face includes an annular local metal layer. An encapsulating cover for the electronic component includes a peripheral wall having an end edge that is mounted above the peripheral area. The annular metal local layer includes, at the periphery thereof, a series of spaced-apart teeth with notches formed therebetween. The teeth extend as far as the peripheral edge of the support substrate.

Abstract: SPADs detect photons of a return light pulse and output corresponding pulse signals. First and second counters, when enabled in response to phase measurement value, are configured to count the pulse signals. The phase measurement value is set for a subsequent iteration of the return light pulse in response to processing of first and second count values of the first and second counters, respectively, for a current iteration. If the first count value exceeds the second count value by more than a difference threshold limit, the phase measurement value is decremented for the subsequent iteration. Otherwise, the phase measurement value is incremented for the subsequent iteration. If the difference threshold limit is not satisfied, the phase measurement value may be maintained for the subsequent iteration, but one of the counters is preloaded for the subsequent iteration with a value equal to a magnitude of the difference between the count values.

Abstract: A battery structure has structure anode and cathode contacts on a front face and on a rear face. The battery structure includes a battery having battery anode and cathode contacts only on a front face thereof. A film including a conductive layer and an insulating layer jackets the battery. The conductive layer extends over the battery anode and cathode contacts and is interrupted therebetween. Openings are provided in the insulating layer on the front and rear faces of the battery structure to form the structure anode and cathode contacts of the battery structure.

Abstract: A sensor is driven at a first heating power value. The sensor generates a sensing signal that is indicative of a sensed entity. A possible onset of a sensor contamination condition is detected as a function of the sensing signal generated by the sensor. If such detecting fails to indicate onset of a sensor contamination condition, the sensor continues to be driven at the first heating power value. However, if such detecting indicates onset of a sensor contamination condition, a protection mode is activated. In the protection mode, the sensor is driven at a second heating power value for a protection interval, where the second heating power value is lower than the first heating power value. Furthermore, the operation may refrain from supplying power to the sensor for a further protection interval, wherein the further protection interval is longer than the protection interval.

Abstract: An integrated circuit includes a voltage regulating circuit in the form of only one transistor, or a group of several transistors in parallel, that are connected between first and second terminals configured to be coupled to an antenna. A control circuit operates to make the voltage regulating circuit inactive when a pulse generated by an electrostatic discharge event appears at one of the first and second terminals, regardless of the direction of flow of the pulse between the first and second terminals. An electrostatic discharge circuit is further provided to address the electrostatic discharge event.

Abstract: In an embodiment, a differential amplifier includes: an input stage; an output stage coupled to the input stage, the output stage having first and second output terminals; and a feedback circuit coupled to the output stage, where the feedback circuit is configured to dynamically adjust a bias current of the output stage based on voltages of the first and second output terminals.

Abstract: The accelerometric sensor has a suspended region, mobile with respect to a supporting structure, and a sensing assembly coupled to the suspended region and configured to detect a movement of the suspended region with respect to the supporting structure. The suspended region has a geometry variable between at least two configurations associated with respective centroids, different from each other. The suspended region is formed by a first region rotatably anchored to the supporting structure and by a second region coupled to the first region through elastic connection elements configured to allow a relative movement of the second region with respect to the first region. A driving assembly is coupled to the second region so as to control the relative movement of the latter with respect to the first region.

Abstract: A MOS transistor located in and on a semiconductor substrate has a drain region, a source region and a conductive gate region. The conductive gate region includes a first conductive gate region that is insulated from the semiconductor substrate and a second conductive gate region that is insulated from and located above the first conductive gate region. A length of the first conductive gate region, measured in the drain-source direction, is greater than a length of the second conductive gate region, also measured in the drain-source direction. The first conductive gate region protrudes longitudinally in the drain-source direction beyond the second conductive gate region at least on one side of the second conductive gate region so as to extend over at least one of the source and drain regions.

Abstract: In an embodiment, a non-volatile memory device includes a memory array divided into a plurality of tiles, and a row decoder that includes main row decoding units associated to a respective group of tiles. The row decoded further includes local row decoding units, each associated to a respective tile for carrying out selection and biasing of corresponding word lines based on decoded address signals and biasing signals. Each local row decoding unit has logic-combination modules coupled to a set of word lines and include, for each word line, a pull-down stage for selecting a word line, and a pull-up stage. The pull-up stage is dynamically biased, alternatively, in a strong-biasing condition towards a tile-supply voltage when the word line is not selected, or in a weak-biasing condition when the word line is selected.

Abstract: Described herein is a method of operating an electronic device that includes collecting initial motion activity data from at least one sensor of the electronic device, and generating a initial probabilistic context of the electronic device relative to its surroundings from the initial collected motion activity data using a motion activity classifier function. The collected motion activity data is stored in a training data set, and the motion activity classifier function is updated using the training data set. The method also includes collecting subsequent motion activity data from the at least one sensor of the electronic device, and generating a subsequent probabilistic context of the electronic device relative to its surroundings from the subsequently collected motion activity data using the updated motion activity classifier function.

Abstract: A sense-amplifier circuit can be used with a non-volatile memory device having a memory array with memory cells arranged in word lines and bit lines and coupled to respective source lines. The circuit has a first circuit branch and a second circuit branch, which receive on a respective first comparison input and second comparison input, during a reading step of a datum stored in a memory cell, a cell current from the bit line associated to the memory cell and a reference current, from a reference bit line in a differential reading operation or from a current-reference generator in a single-ended reading operation. The first and second circuit branches generate, during the datum-reading step, a first output voltage and a second output voltage, as a function of the difference between the cell current and the reference current.

Abstract: A glitch detector includes an input flip-flop clocked by a clock signal and having a non-inverting data output, an inverting data output, and a data input receiving input from the inverting data output, the input flip-flop generating a divided version of the clock signal at the non-inverting data output. A configurable delay chain receives the divided version of the clock signal and generates a delayed version of the divided version of the clock signal as a delay output. An intermediate flip-flop clocked by the clock signal has a data input receiving the delay output, the intermediate flip-flop generating an intermediate output as a function of the delay output. A logic circuit receives the divided version of the clock signal and the intermediate output, and generates a glitch detect signal by performing a logical operation on the divided version of the clock signal and the intermediate output.

Abstract: A sensor chip includes registers storing and outputting configuration data, an extraction circuit receiving digital data and extracting features of the digital data in accordance with the configuration data, and a classification circuit applying a decision tree to the extracted features to generate a context of an electronic device into which the sensor chip is incorporated relative to its surroundings, the decision tree operating according to the configuration data. The classification unit outputs the context to the registers for storage. The configuration data includes which features for the extraction circuit to extract from the digital data, and a structure for the decision tree. The structure for the decision tree includes conditions that the decision tree is to apply to the at least one extracted feature, and outcomes to be effectuated based upon whether the extracted features meet or do not meet the conditions.

Abstract: A circuit includes a first transistor and a second transistor having respective control terminals coupled to receive first and second bias voltages. A first electronic switch is coupled in series with, and between current paths of the first and second transistors to provide an output current line between a circuit output node and ground. A second electronic switch is selectively activated to a conductive state in order to provide a charge transfer current path between a bias node and a charge transfer node in the output current line. A third electronic switch is selectively activated to a conductive state in order to provide a charge transfer current path between the charge transfer node and the control terminal of the second transistor.

Abstract: An error-correction code memory includes memory locations for storing data. The memory is programmed to store one or more intentionally invalid words. Testing of an error correction circuit for the memory is performed by accessing the one or more intentionally invalid words and performing an error detection and error correction operation.

Abstract: A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.