Abstract: A chip scale package (CSP) device includes a CSP having a semiconductor die electrically coupled to a plurality of solder balls. A can having an inside top surface and one or more side walls defines a chamber. The CSP is housed in the chamber and is attached to the inside top surface of the can. A printed circuit board is attached to the solder balls and to the one or more side walls to provide support to the CSP and to the can. The CSP may be a Wafer-Level CSP. The can may be built from a metallic substance or from a non-metallic substance. The can provides stress relief to the CSP during a drop test and during a thermal cycle test.

Abstract: A method and apparatus for reducing noise in a communication signal is provided. The method includes converting raw channel data from the communication signal to a sequence of transition code symbols, each symbol having a plurality of bits, each bit having a position within the symbol. The method also includes sending the bits of each symbol to a plurality of bins, each bin corresponding to the position of each bit within the symbol. For each bin having a number of transitions greater than a number of non-transitions, the method also includes flipping every bit in the bin and setting a corresponding bit in a flip control word to a first value. The method still further includes binary adding the flip control word to each transition code symbol.

Abstract: A method for loading a program, contained in at least a first memory, into a second memory accessible by an execution unit, in which the program is in a cyphered form in the first memory, a circuit for controlling the access to the second memory is configured from program initialization data, instructions of the program, and at least initialization data being decyphered to be transferred into the second memory after configuration of the circuit.

Abstract: A device for locating a DES key value that corresponds to a packet identification (PID) contained at a variable possible location which comprises part only of a 32-bit packet header. A table stored in memory contains for each DES key: (i) a packet header having 32 bits with a PID of either 12, 9 or 8 bits contained at a defined location and with zero values elsewhere, and (ii) a mask value also having 32 bits with ones contained at the said defined location of the PID and zeros elsewhere. The table is divided into regions for respective packet format types. An incoming packet header at an input is combined with a first one of the mask values from the table to provide a combined value that consists of the value held in the input packet header at the defined location and zeros elsewhere. This combined value is compared with the corresponding packet header stored in the table. When they are not equal, the combining and comparison is repeated for the next row of the table.

Abstract: A protocol for collision avoidance in inter and intra basic service set broadcast/multicast communication in a wireless network is disclosed. An access point reserves a broadcast transmission time and conveys that reservation to each of its associated stations. Using a beacon or an action frame, the transmission reservation time is sent to all stations and other neighboring access points within range of the primary access point. Upon receiving the broadcast transmission time reservation, each station associated with the reserving access point and any neighboring access points set their network allocation vector thus preventing frame transmission or reception during the now reserved transmission time.

Abstract: Apparatus for transmitting a clock and data from a first module to a second module connected by a single outward line and a single return line, comprising: means for transmitting a data pulse on the single outward line comprising means for asserting a first edge on said single outward line, said first edge representing a timing edge for the clock and means for asserting a second edge on the single outward line a selectable time period after said first edge, said selectable time period representing said data; and means for receiving a return pulse on said single return path comprising means for receiving a first edge and a second edge on the single return line, the first and second edges being separated by a first time period, said first time period representing an acknowledgement.

Abstract: A charge pump having a supply terminal, for receiving a supply voltage, and an output terminal, for supplying an output voltage. The charge pump has a control block including a comparator having a first comparison input, for receiving the supply voltage, a second comparison input, for receiving the output voltage, and a comparison output, for generating a pump-switch-off signal depending upon a comparison between the input voltage and the output voltage; and a switch controlled in switching off by the pump-switch-off signal and configured for switching off the charge pump circuit. The control block has an activation input for receiving an activation signal that has a plurality of pulses and repeatedly activates the comparator-circuit block.

Abstract: A method of driving a stepper motor in a feed-forward voltage mode may include for a desired speed for the stepper motor setting an amplitude of a sinusoidal phase voltage of the stepper motor to be equal to a sum of an expected back-electromotive force (BEMF) amplitude estimated as a function of the desired speed, and a product of a desired phase current amplitude and an estimated absolute value of an impedance of the stepper motor.

Abstract: An insulating region for a semiconductor wafer and a method of forming same. The insulating region can include a tri-layer structure of silicon oxide, boron nitride and silicon oxide. The insulating region may be used to insulate a semiconductor device layer from an underlying bulk semiconductor substrate. The insulating region can be formed by coating the sides of a very thin cavity with silicon oxide, and filling the remainder of the cavity between the silicon oxide regions with boron nitride.

Abstract: A photosite is formed in a semiconductor substrate and includes a photodiode confined in a direction orthogonal to the surface of the substrate. The photodiode includes a semiconductor zone for storing charge that is formed in an upper semiconductor region having a first conductivity type and includes a main well of a second conductivity type opposite the first conductivity type and laterally pinned in a first direction parallel to the surface of the substrate. The photodiode further includes an additional semiconductor zone including an additional well having the second conductivity type that is buried under and makes contact with the main well.

Abstract: A method for producing a deep trench in a substrate includes a series of elementary etch cycles each etching a portion of the trench. Each elementary cycle includes deposition of a passivation layer on the sidewalls and the bottom of the trench portion etched during previous cycles; followed by pulsed plasma anisotropic ion etching of the trench portion etched during previous cycles, the etching; being implemented in an atmosphere comprising a passivating species; and including a first etch sequence followed by a second etch sequence of less power than the power of the first etch sequence. The first etch sequence etches the passivation layer deposited in the bottom of the portion so as to access the substrate and etches the free substrate at the bottom of the portion while leaving a passivation layer on sidewalls of the portion.

Abstract: A method of making a semiconductor device patterns a first fin in a pFET region, and patterns a second fin in an nFET region. A plurality of conformal microlayers containing a straining material are deposited on the first and second fins. A protective cap material is formed on the first fin, and the conformal layers are selectively removed from the second fin. The straining material is then thermally diffused into the first fin. The protective cap material is removed from the first fin after the thermal annealing and after the conformal micro layers are selectively removed from the second fin.

Abstract: Embodiments described in the present disclosure relate to an array microphone apparatus for generating a beam forming signal. The apparatus includes first, second, and third omni-directional microphones, each converting an audible signal into a corresponding electrical signal. The second omni-directional microphone is disposed between the other two omni-directional microphones. The apparatus includes a first directional microphone forming device to jointly output a first directional microphone signal with a first bi-directional pattern, and a magnitude and phase response handler device to output a second directional microphone signal with an omni-directional pattern shifted by a prefixed value with respect to first directional microphone signal.

Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.

Abstract: An apparatus is formed from a double active layer silicon on insulator (DSOI) substrate that includes first and second active layers separated by an insulating layer. An electrostatic comb drive is formed from the substrate to include a first comb formed from the first active layer and a second comb formed from the second active layer. The comb drive may be used to impart a tilting motion to a micro-mirror. The method of manufacturing provides comb teeth exhibiting an aspect ratio greater than 1:20, with an offset distance between comb teeth of the first and second combs that is less than about 6 ?m.

Abstract: A passive bond pad condition sense structure may be configured to be electrically stimulated and tested for detecting an anomalous or altered electrical characteristic caused by stress or aging of the bond pad capacitively coupled to it. The related bond pad condition testing or monitoring system may include relatively simple stimulating and sensing circuits that may be wholly embedded in the integrated circuit device.

Abstract: A method for electrically programming a non-volatile memory in which a programming cycle includes prior addressing of memory cells from an initial address corresponding to a first row and a column of a memory plane. The method may include addressing the memory cells in a second consecutive row when the end of the first row i is reached to store data on bits with consecutive and increasing addresses in two consecutive rows.

Abstract: A vertical bidirectional switch of the type having its control referenced to the rear surface, including on its rear surface a first main electrode and on its front surface a second main electrode and a gate electrode, this switch being controllable by a positive voltage between its gate and its first electrode, wherein the gate electrode is arranged on the front surface of a via crossing the chip in which the switch is formed.

Abstract: A method distributes personalized circuits to one or more parties. The method distributes a generic circuit to each party, encrypts a unique personalization value using a secret encryption key, and transmits each encrypted personalization value to the corresponding party. Each party then stores the encrypted personalization value in their circuit. The stored encrypted personalization value allows a piece of software to be properly executed by the circuit. A semiconductor integrated circuit is arranged to execute a piece of software that inputs a personalization value as an input parameter. The circuit comprises a personalization memory arranged to store an encrypted personalization value; a key memory for storing a decryption key; a control unit comprising a cryptographic circuit arranged to decrypt the encrypted personalization value using the decryption key; and a processor arranged to receive the decrypted personalization value and execute the software using the decrypted personalization value.

Abstract: Systems and methods for achieving multiple supply voltage compatibility of an input/output (I/O) ring of an integrated circuit (IC) chip. The IC chip includes a core surrounded by the I/O ring which includes a voltage detector circuit. An I/O supply voltage of the IC chip is sensed by the voltage detector circuit to generate a control signal. The control signal is used to configure the I/O ring to operate at the I/O supply voltage of the I/O ring, thus enabling the IC to operate at multiple supply voltage levels.