Patents Assigned to STMicroelectronics
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Publication number: 20120071365Abstract: A biological molecule detection device that includes a detection array, arranged on a body and having one or more probes for detecting corresponding electrically charged molecules, wherein a time varying electric field generating circuit is provided for generating at least one time varying electric field around the detection array within the detection region. The time varying electric field moves the electrical charged molecules repeatedly back and forth over the probes, thus providing increased opportunities for interaction and speeding the detection process.Type: ApplicationFiled: November 29, 2011Publication date: March 22, 2012Applicant: STMicroelectronics S.r.l.Inventors: Michele PALMIERI, Alessandra FISCHETTI
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Publication number: 20120068725Abstract: A sensing structure for use in testing integrated circuits on a substrate. The sensing structure includes at least two sensing regions connectable to a probe and at least one first sensing element. Each of the at least one first sensing elements is directly connected to two sensing regions such that for each sensing region a different value of an electrical parameter is measurable between the sensing region and a first reference potential so as to reliably determine a drift direction of a probe.Type: ApplicationFiled: June 8, 2011Publication date: March 22, 2012Applicant: STMicroelectronics S.r.l.Inventor: Alberto Pagani
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Publication number: 20120069994Abstract: A method for generating a digital signature includes calculating a first magnitude representative of the inverse of a random number raised to the power two; obtaining a first element of the digital signature by executing scalar multiplication between an established point of the elliptic curve and the random number; obtaining a second magnitude by executing modular multiplication, with modulus corresponding to the established elliptic curve's order between the first magnitude and the secret encryption key; obtaining a third magnitude by executing a modular multiplication, with modulus corresponding to the established elliptic curve's order between the random number and the secret encryption key; obtaining a first addend of a second element of the digital signature by executing a modular multiplication, with modulus corresponding to the established elliptic curve's order between the second magnitude and the third magnitude; and generating a second element of the digital signature based on the first addend.Type: ApplicationFiled: September 16, 2011Publication date: March 22, 2012Applicant: STMICROELECTRONICS S.R.L.Inventors: Guido Marco Bertoni, Ruggero Susella, Andrea Palomba
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Publication number: 20120070145Abstract: The present disclosure is directed to a camera module that includes at least a semiconducting die, an image-sensing circuit, a lens, a lens aperture, and a coating that adheres to an exterior surface of the camera module. The coating is opaque to light and prevents light from accessing the camera other than through the lens aperture. The opaque coating is applied as a fluid and is cured. In one embodiment, a mask material is selectively applied to exterior surfaces of the semiconducting die, electrical interconnect layers, glass layers, the lens body, or the lens aperture. After applying the opaque coating, the selectively applied mask material is removed. Methods of selectively applying a mask material include applying a conformable and peelably releasable dope-like material, placing an array of joined, selectively shaped rigid masks over an array of assemblies, and applying a conformable mask material that is heat-expandable.Type: ApplicationFiled: September 22, 2010Publication date: March 22, 2012Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD.Inventors: Wingshenq Wong, David Gani, Glenn De Los Reyes
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Publication number: 20120068223Abstract: A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.Type: ApplicationFiled: May 11, 2011Publication date: March 22, 2012Applicant: STMicroelectronics (Tours) SASInventor: Benjamin Morillon
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Publication number: 20120068689Abstract: An EEPROM memory cell that includes a dual-gate MOS transistor in which the two gates are separated by an insulation layer, wherein the insulation layer includes a first portion and a second portion having lower insulation properties than the first one, the second portion being located at least partially above a channel area of the transistor.Type: ApplicationFiled: December 31, 2008Publication date: March 22, 2012Applicant: STMicroelectronics (Rousset) SASInventor: Pascal Fornara
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Publication number: 20120068050Abstract: A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode.Type: ApplicationFiled: September 15, 2011Publication date: March 22, 2012Applicant: STMicroelectronics S.r.I.Inventors: Massimo Cataldo MAZZILLO, Delfo Nunziato Sanfilippo, Giovanni Condorelli
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Patent number: 8138998Abstract: A device for controlling an electroluminescent matrix display by successive selection of its lines, including a column control circuit having circuitry capable of placing, at the beginning of the selection of a line, the display column at a precharge voltage based on the operating voltage of the previous line, the column control circuit also having circuitry capable of modifying the precharge voltage according to the difference between luminance instructions of the previous line and those of the selected line.Type: GrantFiled: April 11, 2008Date of Patent: March 20, 2012Assignee: STMicroelectronics S.A.Inventors: Céline Mas, Corinne Ianigro, Hervé Pierrot
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Patent number: 8139823Abstract: A method for capturing a sequence of video images, using an imager including an estimation of the parameters of a model of global motion between successive images. The method may include measurement of local motions on edges of the images, with the estimation of the parameters of the global motion model performed using the result of the measurement of local motions on the edges of the images.Type: GrantFiled: March 9, 2011Date of Patent: March 20, 2012Assignee: STMicroelectronics S.A.Inventors: Fabrice Gensolen, Lionel Martin, Guy Cathebras
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Patent number: 8138082Abstract: A semiconductor device includes an interconnect having electrically conductive portions and a dielectric layer made of a first dielectric material. A trench is formed in the dielectric layer. The exposed portions of the dielectric layer which form the side walls of the trench are removed. A dielectric liner is then deposited on the side walls of the trench, the liner being made of a second dielectric material.Type: GrantFiled: February 26, 2007Date of Patent: March 20, 2012Assignees: STMicroelectronics (Crolles 2) SAS, Koninkljike Philips Electronics N.V.Inventors: Joaquin Torres, Vincent Arnal, Laurent-Georges Gosset, Wim Besling
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Patent number: 8139621Abstract: A pulse generator circuit is provided. The pulse generator circuit has an input adapted to receive an input electrical quantity and an output at which an output electrical quantity is made available. A transfer characteristic establishes a relationship between said input and said output electrical quantities. The pulse generator circuit is adapted to provide said output electrical quantity in the form of pulses having a predetermined shape, suitable to be used for UWB transmission. The transfer characteristic has substantially a same shape as that of said pulses. Moreover, a UWB modulating system exploiting the novel pulse generator is proposed.Type: GrantFiled: December 6, 2010Date of Patent: March 20, 2012Assignee: STMicroelectronics S.r.l.Inventors: Marco Orazio Cavallaro, Tino Copani, Giovanni Girlando, Giuseppe Palmisano
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Patent number: 8140870Abstract: A forward converter circuit includes a transformer having a primary winding and a secondary winding. A first transistor is coupled in series with the primary winding and a second transistor is coupled in series with the secondary winding. A control circuit generating control signals for controlling operation of the first and second transistors. The control signals are generated responsive to the values in certain triggered counting circuits satisfying programmable thresholds.Type: GrantFiled: July 22, 2009Date of Patent: March 20, 2012Assignee: STMicroelectronics, Inc.Inventor: Thomas L. Hopkins
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Patent number: 8140738Abstract: A memory interface module provides interfacing between a host processor with multiple flash memories and parallel interfaces of varying protocols. The interface module includes multiple register files, multiple operation information registers, an internal memory, a flash interface portion, and a finite state machine (FSM). The register files receive a command from the host processor for controlling an operation of multiple flash memories. The operation information registers execute and store the command and operation information. The internal memory receives and stores host data from the host processor. The internal memory further stores flash data extracted from multiple flash memories. The flash interface portion interacts with the memory devices connected to the controller. The FSM extracts the command and the operation information from the register files, which are programmed by the user and controls the control signals of the memory devices connected to the controller through the flash interface.Type: GrantFiled: July 19, 2007Date of Patent: March 20, 2012Assignee: STMicroelectronics Pvt. Ltd.Inventors: Deboleena Minz, Sanjeev Varshney
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Patent number: 8138455Abstract: A novel method for introducing delays in self timed memories is disclosed. In the proposed method, delays are introduced by introducing a capacitance on the path of signal to be delayed. The capacitances are realized by using idle lying metal layers in the circuit. The signal to be delayed is connected to these idle lying capacitances via programmable switches. The amount of delay introduced depends on the capacitance introduced in the path of signal which in turn depends on state of the switches. The state of the switches is controlled by delay codes provided externally to the delay introducing circuitry. Since, in the proposed method, idle-lying metal capacitances are utilized, the circuit can be implemented using minimum amount of additional hardware. Also delay provided by the proposed circuitry is a function of memory cell spice characteristics and core parasitic capacitances.Type: GrantFiled: December 28, 2006Date of Patent: March 20, 2012Assignee: STMicroelectronics Pvt. Ltd.Inventors: Nishu Kohli, Mudit Bhargava, Shishir Kumar
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Patent number: 8138012Abstract: A microelectronic device includes a color filter equipped with a plurality of filtering elements, including several filtering elements. The device includes at least one first zone located inside a cavity and includes a first group of filtering elements having a first critical dimension, and at least one second zone at the periphery of the cavity, including a second group of filtering elements having a second critical dimension that is different from the first critical dimension.Type: GrantFiled: June 8, 2007Date of Patent: March 20, 2012Assignee: STMicroelectronics SAInventors: Nicolas Hotellier, Cyril Fellous, Christophe Cowache, Yannick Sanchez
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Patent number: 8139642Abstract: A method for encoding video signals subjects the signals to unbalanced multiple description coding. The unbalanced multiple description coding codes a video signal in a first high resolution packet and a second low resolution packet and represents, respectively a first high resolution description and a second low resolution description. The unbalanced multiple description coding step includes using different intra refresh periods for the first and second high resolution descriptions, with an intra refresh period for the second low resolution description shorter than the intra refresh period of the first high resolution description.Type: GrantFiled: August 29, 2005Date of Patent: March 20, 2012Assignee: STMicroelectronics S.r.l.Inventors: Antonio Vilei, Gabriella Convertino
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Patent number: 8138993Abstract: The control of a plasma display panel, successively comprises, at least for all the cells of a current line having to switch state for the next line: a connection of a terminal of application of an intermediary supply voltage to output terminals of column control stages corresponding to the junction points of first and second switches between two terminals of application of a supply voltage, to perform a precharge or a predischarge of the screen cells; a disconnection of said output terminals from this intermediary voltage; and a connection of each output terminal to a first or to a second power supply voltage by the turning-on of the first or second switch of the corresponding stage, according to a luminance reference value, delayed with respect to the disconnection of the corresponding output terminal from the terminal of application of the intermediary voltage.Type: GrantFiled: May 24, 2007Date of Patent: March 20, 2012Assignee: STMicroelectronics SAInventors: Jerome Bourgoin, Gilles Troussel
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Patent number: 8139031Abstract: A user controlled device, movable into a plurality of positions of a three-dimensional space, includes a MEMS acceleration sensor to detect 3D movements of the user controlled device. The device, such as a mouse, sends control signals correlated to the detected positions to an electrical appliance, such as a computer system. A microcontroller processes the output signals of the MEMS acceleration sensor to generate the control signals, such as screen pointer position signals and “clicking” functions.Type: GrantFiled: October 14, 2003Date of Patent: March 20, 2012Assignees: STMicroelectronics S.r.l., STMicroelectronics Asia Pacific Pte Ltd.Inventors: Giuseppe Calarco, Jean Nguyen, Guy Formica, Stephane Gervais-Ducouret, Fabio Pasolini, Paolo Bendiscioli
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Publication number: 20120061719Abstract: A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of greater doping level, extending at the bottom of the recess in the second layer; and a second region of same conductivity type as the third layer but of greater doping level, extending along the lateral walls of the recess and connecting the first region to the fourth layer.Type: ApplicationFiled: August 16, 2011Publication date: March 15, 2012Applicant: STMicroelectronics (Tours) SASInventors: Samuel Menard, Yannick Hague
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Publication number: 20120061803Abstract: An asymmetrical bidirectional protection component formed in a semiconductor substrate of a first conductivity type, including: a first implanted area of the first conductivity type; a first epitaxial layer of the second conductivity type on the substrate and the first implanted area; a second epitaxial layer of the second conductivity type on the first epitaxial layer, the second layer having a doping level different from that of the first layer; a second area of the first conductivity type on the outer surface of the epitaxial layer, opposite to the first to area; a first metallization covering the entire lower surface of the substrate; and a second metallization covering the second area.Type: ApplicationFiled: August 16, 2011Publication date: March 15, 2012Applicant: STMicroelectronics (Tours) SASInventor: Benjamin Morillon