Abstract: The present invention is to provide an epoxy resin composition uniformly containing a large amount of inorganic fillers, excellent in heat resistance and flame resistance, and having good impregnation into a base material, and a prepreg using the epoxy resin composition, having good tackiness, and being easy in handling. Furthermore, it is to provide a printed wiring board using a metal-clad laminate formed using the prepreg and/or the prepreg or the epoxy resin composition, capable of easily conducting an ENEPIG process, and a semiconductor device using the printed wiring board, excellent in performances. An epoxy resin composition comprises a solid epoxy resin, a silica nanoparticle having an average particle diameter of 1 nm or more and 100 nm or less, and a silica particle having an average particle diameter larger than that of the silica nanoparticle, in the range of 0.1 ?m or more and 5.0 ?m or less.

Abstract: Disclosed is a semiconductor wafer which is characterized in that a resin layer composed of a resin composition containing a cyclic olefin resin (A) having an epoxy group and a photoacid generator (B) is arranged on a surface on which a circuit element is formed, and the residual stress of the resin layer after curing is 1-20 MPa. Also disclosed is a semiconductor device comprising such a semiconductor wafer.

Abstract: An epoxy resin composition for encapsulating a semiconductor element and a semiconductor device manufactured using the epoxy resin composition are provided. The epoxy resin composition includes epoxy resin, a curing agent, at least one kind of an inorganic filler selected from the group consisting of silicates such as talc and calcined clay, oxides such as silica and fused silica, and hydroxides such as aluminum hydroxide and magnesium hydroxide, and a pH buffer agent having a pH buffer area of pH 4 to 8. Further, the semiconductor device is manufactured by encapsulating at least one semiconductor element with a cured product of the above epoxy resin composition. Such a semiconductor device can have excellent moisture resistance.

Abstract: An object of the present invention is to provide an electroless nickel-palladium-gold plating method which is able, when performed on a plating target surface such as terminals of a printed wiring board, terminals of other electronic components, and other resin substrates with a fine metal pattern, to prevent abnormal metal deposition on a resin surface which is an undercoat and to provide a high-quality plated surface. Another object of the present invention is to provide a plated product with a high-quality plated surface, particularly such as an interposer and motherboard, and a semiconductor apparatus using the same.

Abstract: The invention provides a connecting structure for a flip-chip semiconductor package in which cracking and delamination are inhibited or reduced to improve reliability, and in which the potential range of designs is expanded for the inner circuitry of circuit boards and the inductance is reduced. The invention is a connecting structure for a flip-chip semiconductor package, including: a circuit board having a core layer and at least one build-up layer; a semiconductor element connected via metal bumps to the circuit board; and a sealing resin composition with which gaps between the semiconductor element and circuit board are filled, wherein a cured product of the sealing resin composition has a glass transition temperature between 60° C. and 150° C. and a coefficient of linear expansion from room temperature to the glass transition temperature being between 15 ppm/° C. and 35 ppm/° C., a cured product of the build-up layer has a the glass transition temperature of at least 170° C.

Abstract: An object of the present invention is to provide a method of immobilizing the biologically active substance which has an excellent capability of immobilizing a target biologically active substance, and exhibits low nonspecific adsorption of the biologically active substance to provide a high S/N ratio, without using a functional group for fixing the biologically active substance and without having a process of inactivating the functional group for fixing the biologically active substance after immobilizing the biologically active substance. The above object is achieved by a method of immobilizing a biologically active substance comprising the step of: bringing a solution into contact with a compound-side surface of an immobilizing substrate to immobilize the biologically active substance on a surface of the immobilizing substrate, the solution being prepared by dissolving the biologically active substance in a phosphate buffer having a phosphate concentration of 0.

Abstract: An object of the present invention is to provide an epoxy resin composition that provides, when used for an insulation layer of a multilayer printed wiring board, a multilayer printed wiring board which is excellent in plating adhesion, heat resistance and moisture resistance reliability and capable of forming fine wiring. Another object of the present invention is to provide a resin sheet, a prepreg, a method for producing a multilayer printed wiring board, a multilayer printed wiring board and a semiconductor device. These objects are achieved by an epoxy resin composition comprising (A) an epoxy resin, (B) a phenoxy resin having a specific bisphenol acetophenone structure and (C) a curing agent, wherein the content of the phenoxy resin (B) is 10 to 30% by weight of the total solid content of the resin composition.

Abstract: A resin composition is provided comprising a compound having a structure represented by formula (1) and a crosslinking agent: wherein in formula (1), R0 is a single bond or has a structure represented by formula (2); R1 to R8 are respectively any of hydrogen, a group having an alicyclic structure, an organic group having 1 to 10 carbon atoms other than the group having an alicyclic structure, a hydroxyl group and a carboxyl group; and “X” is any of —O—, —NHCO—, —CONH—, —COO— and —OCO—; further, wherein in formula (2), “Ar” is an aromatic group; “Y” is any of a single bond, —O—, —S—, —OCO— and —COO—; “q” is an integer of 1 or more; R9 is hydrogen or an organic group having 1 or more carbon atoms and may be identical with or different from each other when “q” is an integer of 2 or more; at least one of R1 to R8 is the group having an alicyclic structure when R0 is a single bond; at least one of R1 to R9 is the group having an alicyclic structure when R0 has the structure represented by formula (2); and “*”

Abstract: The invention provides a process for producing a recycled resin, which includes: a first step of decomposing a resin composition containing a thermosetting resin in a supercritical or subcritical solvent having a monomer constituting the thermosetting resin or a derivative thereof as an essential component and a second step of adding a polyfunctional compound thereto to process; a recycled resin or a processed and recovered matter obtained according to the process for producing; a recycled resin composition formed from a recycled resin and/or a processed and recovered matter of the resin composition; and a method for recycling a resin composition, which reuses said recycled resin and/or said processed and recovered matter of a resin composition as a raw material of a recycled resin composition.

Abstract: An adhesive tape 101 electrically connecting conductive components includes a resin layer 132 containing a thermosetting resin, a solder powder 103 and a curing agent. The solder powder 103 and the curing agent reside in the resin layer 132, the curing temperature T1 of the resin layer 132 and the melting point T2 of the solder powder 103 satisfy T1?T2+20° C., wherein the resin layer 132 shows a melt viscosity of 50 Pa·s or above and 5000 Pa·s or below, at the melting point T2 of the solder powder 103.

Abstract: A semiconductor device (100) comprises a first resin substrate (101) on which a first semiconductor chip (125) is mounted a surface thereof; a second resin substrate (111) on which a second semiconductor chip (131) is mounted on a surface thereof; and a resin base material (109), joined to a front surface of the first resin substrate (101) and to a back surface of the second resin substrate (111), so that these surfaces are electrically connected. The resin base material (109) is disposed in a circumference of the first resin substrate (101) in the surface of the first resin substrate (101). Further, the first semiconductor chip (125) is disposed in a space section provided among the first resin substrate (101), the second resin substrate (111) and the resin base material (109) in the surface of the first resin substrate (101).

Abstract: Disclosed is a semiconductor device having a wafer level package structure which is characterized by containing a resin layer composed of a resin composition which is curable at 250° C. or less. Such a semiconductor device having a wafer level package structure is excellent in low stress properties, solvent resistance, low water absorbency, electrical insulation properties, adhesiveness and the like.

Abstract: To provide an apparatus and method for producing a resin film product from a thermoplastic resin in a stable manner without damage to the product, wherein the resin film product is thin and has a uniform, flat surface. A mandrel 7 that comes into proximity or contact with the surface of a moving resin film to guide the movement of the resin film when a resin film in continuous form is continuously produced, the mandrel comprising: a mandrel main body 71 having an opening; and a guide part 72 that is composed of an elastic member attached to the opening 71a and that can advance and retract relative to the resin film, and an apparatus and method for producing a resin film using the mandrel.

Abstract: A semiconductor device comprises a semiconductor substrate comprised of an interposer having one surface and a semiconductor element provided on the one surface of the interposer, the semiconductor element including a light receiving portion for receiving light thereon; a transparent substrate having light-transmitting property and one surface facing the light receiving portion, the transparent substrate arranged in a spaced-apart relationship with the one surface of the interposer through a gap formed between the one surface of the interposer and the one surface of the transparent substrate; and a spacer formed in a shape of a frame, the spacer positioned between the one surface of the interposer and the one surface of the transparent substrate for regulating the gap, and the spacer having an inner surface and an outer surface, wherein the one surface of the interposer, the one surface of the transparent substrate and the inner surface of the spacer form a space which is hermetically sealed, and wherein the

Abstract: A semiconductor device 100 has a BGA substrate 110, a semiconductor chip 101, a bump 106 and an underfill 108 filling the periphery of the bump. An interlayer dielectric 104 in the semiconductor chip 101 contains a low dielectric constant film. The bump 106 is comprised of a lead-free solder. The underfill 108 is comprised of a resin material having an elastic modulus of 150 MPa to 800 MPa both inclusive, and a linear expansion coefficient of the BGA substrate 110 in an in-plane direction of the substrate is less than 14 ppm/° C.

Abstract: The present invention is to provide an epoxy resin composition for encapsulating a semiconductor having a high flame resistance without using a flame retarder and having an excellent solder reflow resistance, and a semiconductor device using the same for encapsulating a semiconductor element. An epoxy resin composition for encapsulating a semiconductor of each of the first, second and third aspects essentially comprises (A) a phenol aralkyl type epoxy resin having a phenylene structure, (B) a phenol aralkyl type phenolic resin having a biphenylene structure and (D) an inorganic filler as common components, wherein (D) the inorganic filler is contained at the rate of 84 wt % or more and 92 wt % or less of the total amount of the epoxy resin composition.

Abstract: A resin composition for semiconductor encapsulation contains an epoxy resin (A); a phenolic compound (B) containing two or more phenolic hydroxyl groups; an inorganic filler (C); and a curing accelerator (D). The epoxy resin (A) contains an epoxy resin (a1) represented by the formula (1) wherein Ar is a C6-C20 aryl group, R1 is a C1-C6 hydrocarbon group, R2 is a C1-C4 hydrocarbon group, W1 is oxygen or sulfur, RO is a C1-C6 hydrocarbon group, a=0-10, g=0-3, 0<m<1, 0<n<1, m+n=1 and m:n=1:10 to 1:1, and the resin composition has a moisture absorption rate of 0.22 weight % or less when the composition is humidified at 85° C. and 85% R.H.

Abstract: The present invention provides a resin composition which can produce a multilayer printed wiring board not causing peeling and crack in a thermal shock test such as a cooling/heating cycle, and having high heat resistance and low-thermal expansion characteristics, when the resin composition is used for an insulating layer of the multilayer printed wiring board; and also an insulating sheet provided on a base, a prepreg, a multilayer printed wiring board and a semiconductor device using thereof. The resin composition is used for forming an insulating layer of the multilayer printed wiring board, wherein a surface roughness parameter Rvk value of the insulating layer is from 0.1 ?m to 0.8 ?m, measured after the insulating layer being formed with the resin composition, and subject to roughening treatment.

Abstract: This invention provides an epoxy resin composition for encapsulating a semiconductor exhibiting higher flame resistance, good flowability and adequately higher solder-reflow resistance to allow for the use of a lead-free solder without a flame retardant, as well as a highly reliable semiconductor device in which a semiconductor element is encapsulated with a cured product from the composition.