Abstract: A method of storing an antioxidant mixture includes storing an antioxidant mixture containing an antioxidant and an aluminum compound represented by the following formula (3): AlR3 (3) wherein R moieties each independently represent a halogen atom or an alkyl group having 3 or more carbon atoms.

Abstract: A liquid crystal polyester comprising a repeating unit derived from an aromatic hydroxycarboxylic acid. The content of the repeating unit derived from an aromatic hydroxycarboxylic acid is 80% or more based on 100% of a total number of all repeating units of the liquid crystal polyester. The repeating unit derived from an aromatic hydroxycarboxylic acid comprises a repeating unit (A1) represented by the formula (A1) and a repeating unit (A2) represented by the formula (A2). A ratio [repeating unit (A2)/repeating unit (A1)] is 1.2 or larger. A molar ratio [phenolic hydroxyl groups/(the phenolic hydroxyl groups+acyl groups)] is 0.3 or lower, as calculated by 1H-NMR. —O—Ar11—CO—??(A1) —O—Ar12—CO—??(A1) Ar11 represents a phenylene group and Ar12 represents a naphthylene group. A hydrogen atom is optionally substituted.

Abstract: A membrane separation method where a reverse osmosis method can be applied as a method for separating or concentrating a to-be-treated liquid having a high osmotic pressure or as a water recovery method. The membrane separation method for a to-be-treated liquid having an osmotic pressure includes a first step of separating the to-be-treated liquid into a first permeate and a first retentate by a reverse osmosis method using a loose RO membrane (50). The to-be-treated liquid satisfies ?Cb?>?Pmax when an osmotic pressure of a to-be-treated liquid side membrane surface concentration Cb? is represented by ?Cb? and a maximum operating pressure difference is represented by ?Pmax, or has an osmotic pressure of 5 MPa or more and 100 MPa or less. The loose RO membrane (50) is a membrane through which at least a part of a solute contained in the to-be-treated liquid passes together with a solvent.

Abstract: A method for producing a lithium metal composite oxide, including a calcining step of introducing a gas mixture inside a calcining furnace and calcining a substance to be calcined in the calcining furnace at a temperature of higher than 600° C., in which the substance to be calcined is a raw material mixture containing a mixture of a metal composite compound and a lithium compound or a reaction product of the metal composite compound and the lithium compound, the gas mixture before introduction contains oxygen, an amount of moisture in the gas mixture is 8 vol % or more and 85 vol % or less, and an amount of carbon dioxide in the gas mixture is less than 4 vol %.

Abstract: A lithium metal composite oxide contains a secondary particle which is an aggregate of primary particles and a single particle which exists independently of the secondary particle, in which the lithium metal composite oxide has a layered rock-salt structure, is represented by Composition Formula (I), and satisfies (1) and (2) below. (1): 1.2?LA/LB<1.60 (LA is a crystallite diameter obtained from a diffraction peak within the range of 2?=18.8±1° and LB is a crystallite diameter obtained from a diffraction peak within the range of 2?=38.3±1° in a diffraction peak obtained from powder X-ray diffraction using CuK? rays.) (2): a Me occupancy at a lithium site in the layered rock-salt structure is 2.5% or less, as determined by analyzing the diffraction peaks by the Rietveld analysis method, and the Me is Ni, Co, Mn, or X1.

Abstract: Provided is a method of storing an antioxidant mixture for producing a more thermally stable polymer. A method of storing an antioxidant mixture, comprising storing an antioxidant mixture containing an antioxidant and an aluminum compound under a condition at a gauge pressure of 0.21 MPa or higher.

Abstract: A method of making a semiconductor including a step of preparing a base substrate; a first step of epitaxially growing a single crystal of a group III nitride semiconductor having a top surface with (0001) plane exposed, directly on the main surface of the base substrate, forming a plurality of concaves composed of inclined interfaces other than the (0001) plane on the top surface, gradually expanding the inclined interfaces toward an upper side of the main surface of the base substrate, making the (0001) plane disappear from the top surface, and growing a first layer whose surface is composed only of the inclined interfaces; and a second step of epitaxially growing a single crystal of a group III nitride semiconductor on the first layer, making the inclined interfaces disappear, and growing a second layer having a mirror surface, and a semiconductor made thereby.

Abstract: A display device including a light source (A), a color conversion layer (B), and a color filter (C), wherein the color conversion layer (B) contains quantum dots (B-r) that emit red light, the color filter (C) has a blue color filter (C-b), a green color filter (C-g), and a red color filter (C-r), and the display device satisfies ??1.80 and (II) ??63.0.

Abstract: An object of the present invention is to provide a method for producing a cycloalkyl bromide without using heavy metals and the like. The present invention provides a method for producing a compound represented by Formula (2) wherein R represents an optionally substituted C3-C4 cycloalkyl group, by reacting a compound represented by Formula (1) wherein R represents the same meaning as described above, and M represents an alkali metal, with bromine in presence of a radical initiator or under light irradiation.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, a resin and a resist composition: wherein R1 represents a halogen atom, a cyano group, a nitro group, a haloalkyl group or a hydrocarbon group; m1 represents an integer of 0 to 4; X1 represents *—CO—O—, *—O—CO—, etc.; L1 and L2 each represent a single bond or a substituted/unsubstituted hydrocarbon group; Ar represents a substituted/unsubstituted aromatic hydrocarbon group; X0 represents a single bond, *—O—**, *—CO—O—**, *—O—CO—O—**, etc., in which when L2 is a single bond, X0 is not a single bond; R5 represents a hydrogen atom, a halogen atom, or an alkyl group which may have a halogen atom; and ZI+ represents an organic cation.

Abstract: This positive electrode active material for a lithium secondary battery contains a lithium metal composite oxide containing at least Li and Ni, and satisfies (1) and (2): (1) a pore volume in a range of pore diameter of 2 to 10 nm is 9.0×10?4 cm3/g or less in a pore diameter distribution in an adsorption isotherm as determined by measurement of an adsorption isotherm and a desorption isotherm of nitrogen gas and a Barrett-Joyner-Halenda method; and (2) a pore diameter at which a log differential pore volume is a maximum value in a log differential pore volume distribution in a range of pore diameter of 2 to 200 nm based on a pore diameter distribution in a desorption isotherm as determined by measurement of an adsorption isotherm and a desorption isotherm of nitrogen gas and a Barrett-Joyner-Halenda method is more than 10 nm and 200 nm or less.

Abstract: In a spectrum obtained by X-ray photoelectron spectroscopy measurement of surfaces of particles of the positive electrode active material for the lithium secondary battery, the positive electrode active material has a peak X derived from a Li element having a peak top at 54.5±3.0 eV; when, upon waveform separation of the peak X derived from the Li element into a peak (A) having a peak top at 53.5±1.0 eV and a peak (a) having a peak top at 55.5±1.0 eV, an atomic ratio calculated from the peak (A), a peak derived from the Ni element, and a peak derived from the element M is defined as Li(A)/(Ni+M), and the BET specific surface area of the positive electrode active material for the lithium secondary battery measured by a nitrogen adsorption method is defined as PS, the value of {Li(A)/(Ni+M)}/PS is 0.4 to 2.6 g/m2.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, a resin and a resist composition: wherein Q1, Q2, R1 and R2 each independently represent a H atom, a F atom, a perfluoroalkyl group or an alkyl group; z represents an integer of 0 to 6; X1 represents *—CO—O—, *—O—CO—, *—O—CO—O— or *—O—; L1 represents a single bond or a substituted/unsubstituted hydrocarbon group, —CH2— included in the group may be replaced by —O—, —S—, etc., but —CH2— bonded with Ar1 is not replaced by —O—, —S—, etc.; Ar represents an aromatic hydrocarbon group having an I atom, and the group may have a substituent other than the I atom; R5 represents a H atom, a halogen atom, or an alkyl group which may have a halogen atom; and ZI+ represents an organic cation.

Abstract: To easily obtain a nitride crystal substrate. A seed substrate for nitride crystal growth includes: a base substrate; an intermediate layer provided above the base substrate and including n-type group III nitride crystal; and a cover layer provided on the intermediate layer and including group II nitride crystal having a carrier concentration lower than that of the intermediate layer, wherein the intermediate layer is porous, a surface of the cover layer has an arithmetic mean roughness of 1.0 nm or less, and the surface of the cover layer has a root mean square roughness of 2.0 nm or less, the arithmetic mean roughness and the root mean square roughness being values obtained when the surface of the cover layer is observed with an atomic force microscope in a field of view of 5 ?m square.

Abstract: A carboxylate represented by formula (I), a quencher and a resist composition including the same: wherein R1, R2 and R3 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group which may have a substituent, —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—, m1 represents an integer of 0 to 5, m2 represents an integer of 0 to 4, m3 represents an integer of 0 to 3, and X1 represents a single bond, —CH2—, —O—, —S—, —CO—, —SO— or —SO2—.

Abstract: The present invention relates to a phosphite composition including a phosphite compound A0 represented by formula (1); and an oligomer A derived from the compound A0, wherein the oligomer A includes a structure represented by formula (2):, a number average molecular weight of the oligomer A is 2,000 to 30,000, and the phosphite composition has a content of the oligomer A of 1% or more.

Abstract: An object of the present invention is to provide a production method for a backing plate that can reduce displacement of the groove.

Abstract: A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.

Abstract: Disclosed are a resin including a structural unit represented by formula (I), and a resist composition comprising the same: wherein R0 represents a hydrogen atom or a halogen atom; X1 represents *—CO—O—**, *—O—CO—O—**, etc.; L1 represents a single bond or a substituted/unsubstituted hydrocarbon group; Ar represents a substituted/unsubstituted aromatic hydrocarbon group; A1 represents hydrocarbon group; R2 represents a halogen atom, a haloalkyl group, etc.; R3 represents a group represented by formula (5a), etc.; m1 represents an integer of 1 to 6; m2 represents an integer of 0 to 3; L10 represents a single bond or an alkanediyl group; m51 and m52 each represent 0 or 1; Raa1 and Raa2 each represent a hydrogen atom or a hydrocarbon group; Xa represents a single bond, S, O, etc.; and Raa3 represents a hydrocarbon group, etc.

Abstract: There is provided an epoxy resin composition comprising an epoxy resin (A), a curing agent (B), an imidazole adduct-type curing accelerator (C), and a Lewis acid compound (D) having a boron atom or an aluminum atom, wherein the curing agent (B) comprises a compound (B-1) represented by a formula (B-1) [R1 denotes a hydrogen atom, a halogen atom, a methoxy group or a hydrocarbon group having 1 to 12 carbon atoms]; and the content of a compound (B-2) represented by a formula (B-2) [R2 denotes a hydrogen atom, a halogen atom, a methyl group or a methoxy group] in the curing agent (B) is 0 parts by mass or higher and lower than 2.0 parts by mass based on 100 parts by mass of the epoxy resin (A).