Patents Assigned to Sumitomo Electric Industry, Ltd.
  • Patent number: 5532505
    Abstract: This invention aims at providing an high output FET having a planar type-gate structure suitable for integration, and a structure that suppresses long gate effect. A heavily doped thin channel layer 13 is formed on a semiconductor substrate 11, and a cap layer including a doped layer 15 is formed on the channel layer 13. A thickness and a dopant concentration of the doped layer 15 are so set that the doped layer 15 per se is depleted by a surface depletion region resulting from an interface level of the semiconductor substrate surface, and the surface depletion region does not widen to the channel layer 13. Consequently no long gate effect takes place on the side where a gate bias is lower.
    Type: Grant
    Filed: November 10, 1993
    Date of Patent: July 2, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Nobuhiro Kuwata
  • Patent number: 5533160
    Abstract: This apparatus comprises: an installation table for arranging the optical fibers thereon in order to splice the optical fibers; a cover member for covering said installation table; and a gripping mechanism, attached to said cover member, for gripping a storing component that stores the optical fibers.
    Type: Grant
    Filed: January 31, 1995
    Date of Patent: July 2, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tetsuaki Watanabe, Mikio Kobayashi, Shikou Kodama
  • Patent number: 5529962
    Abstract: An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1,000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
    Type: Grant
    Filed: March 14, 1995
    Date of Patent: June 25, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Seiji Nakahata, Takahiro Matsuura, Kouichi Sogabe, Akira Yamakawa
  • Patent number: 5528938
    Abstract: A method of measuring a length of a conduit comprises the steps of: supplying air into a conduit to insert a filamentary body into the conduit by flow of the air; detecting arrival of a forward end of the filamentary body at an outlet of the conduit; and measuring the length of the conduit from the length of the filamentary body inserted into the conduit. An apparatus for measuring a length of a conduit, comprises an air supply device for supplying air into the conduit; a filamentary body including a wire and a plurality of elastic large-diameter members attached to the wire; and a device for detecting that a forward end of the filamentary body arrives at an outlet end of the conduit, where the length of the conduit is measured from the length of the filamentary body inserted into the conduit.
    Type: Grant
    Filed: August 2, 1994
    Date of Patent: June 25, 1996
    Assignees: Sumitomo Electric Industries, Ltd., Nippon Telegraph and Telephone Corporation
    Inventors: Hiroaki Sano, Kinji Taguchi, Shigeru Tanaka, Tetsuro Yabuta, Takeshi Tsujimura
  • Patent number: 5530782
    Abstract: A mid-span branching method for an optical path including a multi-fiber optical cable which is constituted by a multi-fiber ribbon with a plurality of optical fibers arranged in a plane and integrated with a common coating, includes the first step of exposing an intermediate portion of the multi-fiber ribbon from the multi-fiber optical cable (step 101), the second step of extracting the exposed multi-fiber ribbon (step 102), the step of separating at least one single-core optical fiber from the extracted multi-fiber ribbon (step 103), and the step of connecting the single-core optical fiber separated from the multi-fiber optical cable to a single-core optical fiber branched from a branch cable (steps 104, 105).
    Type: Grant
    Filed: September 21, 1994
    Date of Patent: June 25, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Osaka, Tetsuaki Watanabe, Ken Kashima
  • Patent number: 5529852
    Abstract: An aluminum nitride sintered body has a metallized layer on its surface. The metallized layer contains tungsten, aluminum oxide and calcium oxide. Preferably, the metallized layer contains 40 to 96 percent by weight of a metal, 0.4 to 25 percent by weight of an aluminum oxide and 3 to 35 percent by weight of calcium oxide. In a method of forming a metallized layer on the surface of the aluminum nitride sintered body, such body is first formed by firing. Then, a metal paste of tungsten containing powder of calcium oxide and powder of aluminum oxide is provided. The metal paste is coated on the surface of the aluminum nitride sintered body which is then fired with the metal paste in an inert atmosphere.
    Type: Grant
    Filed: March 7, 1994
    Date of Patent: June 25, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akira Sasame, Hitoyuki Sakanoue
  • Patent number: 5529979
    Abstract: Superconducting oxide material containing compound represented by the formula:(Tl.sub.(l-p-q) Bi.sub.p Pb.sub.q).sub.y .gamma..sub.z (.alpha..sub.(l-r) .beta..sub.r).sub.s Cu.sub.v O.sub.win which each of ".alpha." and ".gamma." is an element selected in IIa group of the periodic table, ".beta." is an element selected from a group comprising Na, K, Rb and Cs, "y", "z", "v", "w", "p", "q", "r" and "s" are numbers each satisfying respective range of 0.5.ltoreq.y.ltoreq.3.0, 0.5.ltoreq.z.ltoreq.6.0, 1.0.ltoreq.v, 5.0.ltoreq.w, 0.ltoreq.p.ltoreq.1.0, 0.ltoreq.q.ltoreq.1.0, 0.ltoreq.r.ltoreq.1.0 and 0.5.ltoreq.s.ltoreq.3.0.
    Type: Grant
    Filed: February 2, 1994
    Date of Patent: June 25, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yasuko Torii, Hiroyuki Kusuhara
  • Patent number: 5527646
    Abstract: A method of forming a microstructure having a higher aspect ratio by using a general purpose synchrotron orbital radiation apparatus is provided. A resist layer mainly including a copolymer of methylmethacrylate and methacrylic acid is formed relatively thick on a substrate. Lithography by synchrotron orbital radiation is carried out on the resist layer, to form a resist pattern. By carrying out normal electroplating, electro-forming or the like in accordance with the resist pattern, a microstructure having a high aspect ratio is obtained.
    Type: Grant
    Filed: March 23, 1994
    Date of Patent: June 18, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Seiji Ogino, Toshiyuki Numazawa
  • Patent number: 5527735
    Abstract: N-type c-BN is a heat-resistant material with a wide band gap. Ohmic electrodes are indispensable for making semiconductor devices utilizing n-type c-BN. The electrodes proposed so far are likely to deteriorate in an atmosphere of high temperature. The degradation of electrodes hinders the production of semiconductor devices utilizing c-BN. A heat-resistant ohmic electrode is produced by forming a low contact resistance layer of a boride or a nitride of Ti, Zr or Hf on a heated c-BN and by covering the low resistance layer by an Au layer. Otherwise an ohmic electrode is produced by forming a low contact resistance layer of one of Ti, Zr, Hf, etc. on c-BN, making a diffusion barrier layer of W, Mo, Ta or Pt and depositing an Au layer on the diffusion barrier layer.
    Type: Grant
    Filed: April 25, 1995
    Date of Patent: June 18, 1996
    Assignees: Sumitomo Electric Industries, Ltd., Research Institute of Innovative Technology for the Earth
    Inventors: Tadashi Tomikawa, Yoshiki Nishibayashi, Shin-ichi Shikata
  • Patent number: 5526731
    Abstract: The valve portion of pressure control valve tends to be unstable because when the valve is opened, the valve opening pressure intensifies. To prevent this, the valve portion of the pressure control valve is in the form of a puppet valve so that the valve body of the valve portion receives the pressure of a dynamic pressure source in the valve-opening direction and receives the pressure of an fluid pressure introducing chamber in the valve-closing direction. With this arrangement, when the valve opens and the dynamic pressure source pressure drops, the valve-closing force increases, so that the pressure control valve shows a stronger tendency to close. This prevents the freefall of the pressure source pressure, so that the behavior of the valve portion stabilizes. Thus, it is possible to prevent vibrations and abnormal noise.
    Type: Grant
    Filed: July 20, 1995
    Date of Patent: June 18, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Koichi Hashida
  • Patent number: 5527997
    Abstract: A conductor for use in a flat cable includes thereon a tin or tin alloy plating the thickness of which is substantially uniform over the whole periphery of a flat conductor, in order to provide a conductor for use in a flat cable which can minimize variations in the plating thickness thereof, provide a good contact reliability with respect to a connector when it is used in a flat cable, and causes no increase in the contact resistance thereof in a humidity withstand test after it is inserted into and removed from the connector.
    Type: Grant
    Filed: December 14, 1994
    Date of Patent: June 18, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Haruo Saen, Ryuzo Suzuki, Hiroshi Fujii, Atsushi Iizuka
  • Patent number: 5527897
    Abstract: Disclosed herein are Human Id genes (Id-1H and Id-1H') and variants thereof. Origin, preparation process, biochemical functions and the like: two synthetic oligonucleotides separately having base sequences corresponding to regions of amino acid sequence, which are almost completely conserved by three mouse Id genes (Id-1, Id-2 and HLH462) are used as probes to screen clones having respective cDNAs complementary to the probes from a cDNA library of human TIG-1 fibroblasts in accordance with the hybridization method, thereby isolating human Id genes. The expression of the human Id genes specifically varies according to the state of cell proliferation, in particular, the acquisition of cell aging and permanently proliferating ability.
    Type: Grant
    Filed: November 12, 1993
    Date of Patent: June 18, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kinichiro Oda, Susumu Nakada, Eiji Hara, Tomoko Yamaguchi, Takeshi Nakamura, Yumiko Oka, Toshihiko Kishimoto
  • Patent number: 5528022
    Abstract: A symbol read device useful as a bar code reader, optical character reader or the like. A symbol bearing surface is illuminated by two different light sources that are distinguishable based on their respective wavelengths or modulated frequencies. A detector detects light reflected from the symbol surface and provides a detection signal indicative thereof. The detection signal is processed to recognize the symbol being read. In a multi-scan embodiment, an automatic gain control (AGC) circuit controls a level of detector signal to aid in recognition of the symbols being read.
    Type: Grant
    Filed: October 1, 1993
    Date of Patent: June 18, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Atsushi Nakazawa
  • Patent number: 5525428
    Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
    Type: Grant
    Filed: January 4, 1995
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
  • Patent number: 5524571
    Abstract: Herein disclosed are apparatuses for manufacturing compound semiconductor polycrystals comprising a pressure vessel, an upper shaft, a container for a first component fixed to the upper shaft, a heater around the container, a lower shaft, a susceptor and a crucible for charging a second component, a heater for the crucible and a communicating pipe for spatially connecting the container and the crucible optionally provided with a porous member at the lower extremity and/or a cylindrical member for confining a space over a part of the melt surface contained in the crucible from the remaining inner space of the vessel, the apparatuses permitting the substantial reduction of the reaction time and an improvement of the yield of the polycrystals due to the presence of the porous member and/or the cylindrical member separating the inner space of the vessel into two portions.
    Type: Grant
    Filed: February 9, 1990
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Akihisa Kawasaki, Toshihiro Kotani
  • Patent number: 5525835
    Abstract: The semiconductor chip module according to the present invention comprises a semiconductor substrate on which a wiring portion is formed, a semiconductor chip 4 mounted so as to face a circuit side up to the wiring portion, a heat sink 3, 3a, 13 with one end contacted to the central portion of an upper surface of the semiconductor chip 4, 4a; and a cap which has an opening 2a for exposing the other end of the heat sink 3, 3a, 13 to the outside, the cap 2 enclosing all of the semiconductor chips 4, 4a. Accordingly, the heat generated from the semiconductor chips 4, 4a can be dissipated through the heat sink 3, 3a, 13 to the outside. It results in providing a semiconductor chip module without inconvenience for operation with high speed.
    Type: Grant
    Filed: April 22, 1994
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Masanori Nishiguchi
  • Patent number: 5526115
    Abstract: A source-sensitive gyroscope guides light beams emitted from a light emitting device into both ends of the fiber coil, makes the beams propagate in the coil clockwise and counterclockwise, and retrieves the beams into the light emitting device itself. The phase difference is obtained from the change of the driving current or the change of the driving voltage of the light emitting device, or from the change of a photocurrent of the monitoring photodetector mounted behind the light emitting device in the light source. A birefringent medium having an optical path difference longer than the coherent length of the light is interposed between the light emitting device and the end of the fiber. When the light beams are non-polarized, the birefringent medium is aligned in the orientation in which the anisotropic axis is perpendicular to the beam line.
    Type: Grant
    Filed: November 25, 1994
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Yozo Nishiura
  • Patent number: 5525548
    Abstract: A process of manufacturing a semiconductor chip module by mounting a semiconductor chip on a substrate and contacting the chip with a heat sink. A cap is adhered to the substrate and an adhesive material is embedded in a gap between the heat sink and the chip and into a gap between the inner wall of an opening in the cap and the heat sink. As a result, the heat sink is fixed to the cap and the cap is hermetically sealed.
    Type: Grant
    Filed: September 9, 1994
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Masanori Nishiguchi
  • Patent number: 5524659
    Abstract: The present invention provides a flow control valve which makes it possible to prevent the leakage of hydraulic fluid when the valve is closed while continuously controlling the flow rate. An axially slidable piston (12) housed in a housing (11) provided with a first port (13) and second port (16) is urged by an electromagnet (20). A first closing valve (14) for connecting and isolating the first port (13) and first fluid chamber (A), with a valve seat portion (14C) opened opposite one end portion of the piston (12) in the first fluid chamber (A) and a valve body (14B) which is seated in and separated from the valve seat portion in accordance with the axial displacement of the piston (12), is provided between the first port (13) and the first fluid chamber (A). An orifice (15) is provided in the conduit connecting the first fluid chamber (A) and the second fluid chamber (B).
    Type: Grant
    Filed: April 28, 1995
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Koji Takata, Koichi Hashida
  • Patent number: 5526455
    Abstract: A connector which can be assembled easily with high accuracy and prevents the increase of the cost of each part includes a distinctively shaped lens constituting an optical system between independent optical devices. The lens is a lens that a support portion is integrally molded with an optically functioning portion as a sleeve for fixing a ferrule put on an end of an optical fiber at a predetermined position to insert the end of the optical fiber. The support portion protrudes along an optical axis of the optically functioning portion.
    Type: Grant
    Filed: September 15, 1994
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Osamu Akita, Ichiro Tonai