Abstract: Provided are a substrate for a superconducting compound and a method for manufacturing the substrate which can realize the excellent adhesive strength simultaneously with high orientation of copper. An absorbed material on a surface of a copper foil to which rolling is applied at a draft of 90% or more is removed by applying sputter etching to the surface of the copper foil, sputter etching is applied to a nonmagnetic metal sheet, the copper foil and the metal sheet are bonded to each other by applying a pressure to the copper foil and the metal sheet using reduction rolls, crystals of the copper in the copper foil are oriented by heating a laminated body formed by such bonding, copper is diffused into the metal sheet by heating with a copper diffusion distance of lOnm or more, and a protective layer is laminated to a surface of the copper foil of the laminated body.

Abstract: Provided are a green compact from which a low-loss core can be formed, a method of manufacturing the green compact, and a core for a reactor using the green compact. Parts of outer circumferential surfaces of green compacts 41 and 42 are molded with an inner peripheral surface of a through hole 10hA of a die 10A, and the other parts are molded with an outer circumferential surface of a core rod 13A that is inserted and disposed in the through hole 10hA. A raw-material powder P, which is a coated soft magnetic powder, is fed into compacting spaces 31 and 32 and pressurized by using a lower punch 12 (first punch) and an upper punch 11 (second punch). Then, the green compacts 41 and 42 are removed from the compacting spaces 31 and 32 by moving the die 10A with respect to the green compacts 41 and 42 without moving the core rod 13A with respect to the green compacts 41 and 42.

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Abstract: In an electrode according to the present invention including a three-dimensional network aluminum porous body as a base material, the electrode is a sheet-shaped electrode, and a cell of the three-dimensional network aluminum porous body has an elliptic shape having a minor axis in the thickness direction of the electrode in a cross section parallel to the longitudinal direction and thickness direction of the electrode, and a cell of the three-dimensional network aluminum porous body has an elliptic shape having a minor axis in the thickness direction of the electrode in a cross section parallel to the width direction and thickness direction of the electrode. The electrode is preferably obtained by subjecting the three-dimensional network aluminum porous body to at least a current collecting lead welding step, an active material filling step and a compressing step.

Abstract: A bipolar plate for a redox flow battery that uses an electrically conductive composite having excellent mechanical strength, plasticity, and liquid-blocking property, and higher electrical conductivity is provided. The bipolar plate includes an electrically conductive composite prepared by mixing a thermoplastic resin, a carbonaceous material selected from graphite and carbon black, and a carbon nano-tube, in which a carbonaceous material content is 20 to 150 parts by weight and a carbon nano-tube content is 1 to 10 parts by weight relative to 100 parts by weight of the thermoplastic resin.

Abstract: A method of controlling a wavelength-tunable laser selecting an oscillation wavelength with a combination of a plurality of wavelength selection portions of which wavelength peak is different from each other, comprising: a first step of confirming a control direction of the wavelength selection portion in a case where a setting value is changed from a first setting value for achieving the first wavelength to a second setting value for achieving the second wavelength; a second step of setting a setting value that is shifted from the second setting value in a direction that is opposite of a pre-determined changing direction on the wavelength selection portion as a prepared setting value, when the control direction confirmed in the first step is opposite to the pre-determined changing direction; and a third step of changing the prepared setting value set in the second step to the second setting value.

Abstract: Cell electrodes are provided respectively for cell structures on a semiconductor substrate. The cell electrodes are divided into groups each including two or more cell electrodes. Conductive members are respectively electrically connected to the groups. The conductive members have a used portion and an unused portion. The used portion has two or more conductive members electrically connected to each other. The unused portion has at least one of the conductive members and is electrically insulated from the used portion.

Abstract: A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied.

Abstract: It is an object of the present invention to provide an electrochemical element which has a high capacity and is low in cost. The electrochemical element of the present invention is an electrochemical element including an electrode for an electrochemical element, wherein a current collector of positive electrode and/or a current collector of negative electrode is a metal porous body having continuous pores and a mixture containing an active material is filled into the continuous pores.

Abstract: Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 ?m or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.

Abstract: The invention offers a container for a superconducting apparatus and a superconducting apparatus. The container mounts in it a superconducting coil as a member including a superconductor. The container is provided with a vacuum insulated container 20 as a housing case made of resin and provided with an opening, a lead electrode 50 as a metal member positioned such that it passes through the opening, and a combination of connecting members 63 and 65 that covers the opening, that connects the lead electrode 50 to the vacuum insulated container 20, and that is provided with a curved portion as a thermal-stress-alleviating portion. Having the foregoing structure, the container can suppress the development of separation and cracks at the portion where the metal member passes though and is fixed to the wall of the container that mounts in it a superconductor such as a superconducting coil.

Abstract: A MOSFET representing a semiconductor device capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration by including an electrode that can be in contact with any of a p-type SiC region and an n-type SiC region with contact resistance being sufficiently suppressed includes an n+ SiC substrate, an n? SiC layer formed on the n+ SiC substrate, and a source electrode arranged in contact with the n? SiC layer. The n? SiC layer includes an n+ source region having an n conductivity type. The source electrode includes a source contact electrode arranged in contact with the n+ source region and containing Ti, Al and Si.

Abstract: An anticorrosive that is capable of delivering high anticorrosive capability. The anticorrosive mainly contains an epoxy resin, and has a viscosity within a range of 1000 to 30000 mPa·s at 25 degrees C., which is measured in accordance with the JIS Z8803. The anticorrosive can be favorably applied to an electrically connected portion between a wire conductor of a coated electric wire with a terminal and a terminal member. The coated electric wire with the terminal has the configuration that the electrically connected portion between the wire conductor and the terminal member is coated with a cured material of the anticorrosive. The epoxy resin is preferably a one-component epoxy resin.

Abstract: There is provided a lightweight, high strength impact-resistant component having a good impact energy absorptive property. The impact-resistant component is composed of a magnesium alloy containing Al in an amount of more than 7.3% by mass and 12% or less by mass. A rectangular test piece is produced from the impact-resistant component; an iron ball 30 having a mass of 225 g is allowed to freely fall toward a central portion of the test piece while both end portions of the test piece are fixed to supports 21 and 22; and, when a distance between a position from which the iron ball 30 is allowed to freely fall and the test piece is assumed to be a fall height, a fall height H at which a dent is not generated on the test piece by the iron ball 30 is measured. The impact-resistant component has a fall height H of more than 340 mm. In the impact-resistant component of the present invention, the fall height at which a dent is not generated is large.

Abstract: First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First to fifth electrodes are provided on the first to fifth impurity regions, respectively. Electrical connection is established between the first and fifth electrodes, and between the third and fourth electrodes. A sixth electrode is provided on a gate insulating film covering a portion between the fourth and fifth impurity regions.

Abstract: A first layer has a first conductivity type. A second layer is provided on the first layer such that a part of the first layer is exposed, and it has a second conductivity type. First to third impurity regions penetrate the second layer and reach the first layer. Each of the first and second impurity regions has the first conductivity type. The third impurity region is arranged between the first and second impurity regions and it has the second conductivity type. First to third electrodes are provided on the first to third impurity regions, respectively. A Schottky electrode is provided on the part of the first layer and electrically connected to the first electrode.

Abstract: A group III nitride composite substrate includes a support substrate, an oxide film formed on the support substrate, and a group III nitride layer formed on the oxide film. The oxide film may be a film selected from the group consisting of a TiO2 film and a SrTiO3 film, and an impurity may be added to the oxide film. Accordingly, the group III nitride composite substrate having a high bonding strength between the support substrate and the group III nitride layer is provided.

Abstract: A protection sleeve includes a heat shrinkable tube and an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube. The heat shrinkable tube, the adhesive tube, and the reinforcing rod are adhered together in a section spanning across a lengthwise section of the heat shrinkable tube. A protection sleeve manufacturing apparatus includes a jig for securing protection sleeves and a heating device. The jig is contrived to hold a plurality of protection sleeves (each including a heat shrinkable tube, an adhesive tube and a reinforcing rod housed inside the heat shrinkable tube) in a parallel arrangement with spaces in-between. The heating device includes a plurality of hot air vents, means for setting a first distance between the jig and the hot air vents, and means for setting the jig and the hot air vents to a second distance that is closer than the first distance.

Abstract: A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation ? of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation ? of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm.

Abstract: A method for the manufacture of an optical fiber preform for producing a low attenuation optical fiber with high yield, comprising preparing a core rod and adding a cladding region. At the step of preparing a core rod, the core rod is produced including a first core region with Cl density of less than 600 atm-ppm, a second core region with Cl density of less than 600 atm-ppm around the first core region, and a third core region with Cl density of 3000 atm-ppm or more around the second core region. An alkali metal is selectively added to the first core region among the first, second, and third core regions. A cladding region is formed around the core rod by heating at a temperature of 1200° C. or higher for 7 hours or less.