Abstract: A vehicle-mounted video communication system is equipped with first to fourth image pickup devices, mounted on a vehicle, for transmitting video data obtained by picking up an image; first to fourth video processing devices for processing the video data; and a vehicle-mounted video relay device having connection sections connected to the first to fourth image pickup devices and the first to fourth video processing devices via communication cables and configured to transmit the video data transmitted from the first to fourth image pickup devices selectively or in a multiplexed state to the first to fourth video processing devices.

Abstract: A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on the semiconductor substrate and has an upper electrode coupled electrically to a lower electrode of the first semiconductor light receiving element with a wiring provided on the semiconductor substrate; and a second mesa that is provided on the semiconductor substrate and has an upper electrode that has a same electrical potential as the upper electrode of the first semiconductor light receiving element when coupled to the electrode wiring on the mounting carrier.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: The chromatic dispersion of an optical component is measured with high accuracy using a simple set-up, which includes a pump light source, a probe light source, and a measuring means. Pump light having a wavelength ?pump and probe light having a wavelength ?probe is propagated through an optical component, with the wavelength ?probe being apart from the wavelength ?pump by a given frequency. The generation efficiency of the idler light with respect to the wavelength ?pump is calculated by measuring the power of idler light having a wavelength ?idler output from the optical component, and by seeking the pump light wavelength for making the generation efficiency a local extreme value, the chromatic dispersion of the optical component is calculated from the result of calculation of phase mismatch among the pump light wavelength having such wavelength as sought, the corresponding probe light wavelength, and the corresponding the idler light wavelength.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: The present invention provides a three-dimensional network aluminum porous body in which the cell diameter of the three-dimensional network aluminum porous body is uneven in the thickness direction, and a current collector and an electrode respectively using the aluminum porous body, and a production method thereof. That is, such a sheet-shaped three-dimensional network aluminum porous body for a current collector has a cell diameter uneven in the thickness direction. Particularly, it is preferred that when a cross section in the thickness direction of the three-dimensional network aluminum porous body is divided into three regions of a region 1, a region 2 and a region 3 in this order, the average of the cell diameter in the region 1 and the cell diameter in the region 3 differs from the cell diameter in the region 2.

Abstract: The present invention aims at providing an electrode for an electrochemical element having adequately high capacity and output. The electrode for an electrochemical element of the present invention has a feature in that a mixture containing an active material, a conduction aid and a binder is filled into continuous pores of an aluminum porous body having the continuous pores, and the content ratio of the conduction aid in the mixture is 0 to 4 mass %. Further, the electrode for an electrochemical element of the present invention has a feature in that a mixture containing an active material, a conduction aid and a binder is filled into continuous pores of an aluminum porous body having the continuous pores, and the content ratio of the binder in the mixture is less than 5 mass %.

Abstract: A base station device is provided with a MAC unit 30 which performs processing on a MAC layer for wireless communication, a scheduler 10 which performs scheduling for determining allocation of radio resources, and a radio resource management unit 70 which manages the radio resources. The scheduler 10 is connected to the radio resource management unit 70 so as to obtain information from the radio resource management unit 70 without intervention of the MAC unit 30.

Abstract: A tool made of a cubic boron nitride sintered body which has a long life in a stable manner in any application of cutting and plastic working is provided. The tool made of the cubic boron nitride sintered body according to the present invention includes a cubic boron nitride sintered body at least at a tool working point and it is characterized by satisfying an Equation (I) and any one of an Equation (II) and an Equation (III) 20?X?98??(I) Y?0.6×X+3 (where 20?X<88)??(II) Y?5.8×X?455 (where 88?X?98)??(III) where a ratio of cubic boron nitride contained in the cubic boron nitride sintered body is denoted as X volume % and thermal conductivity of the cubic boron nitride sintered body is denoted as Y (W/m·K).

Abstract: A wire harness includes a bundle of electric wires and a protector protecting the bundle of electric wires by extending in a longitudinal direction of the bundle of electric wires and surrounding a portion thereof. The protector includes a base material and a binder material having a lower melting point than the base material, the protector being joined in a joint portion thereof by cooling and solidifying the melted binder material. In a case where a first side portion and a second side portion are each provided as a portion along the longitudinal direction in an outer peripheral surface of the protector and the second side portion is disposed opposite the first side portion with the bundle of electric wires therebetween, a portion of the binder material in each of the first side portion and the second side portion is melted, cooled, and solidified such that the second side portion is harder than the first side portion.

Abstract: A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.

Abstract: A wavelength tunable laser diode (LD) is disclosed. The LD provides a SG-DFB region and a CSG-DBR region. The SG-DFB region shows a gain spectrum with a plurality of gain peaks, while, the CSG-DBR region shows a reflection spectrum with a plurality of reflection peaks. The LD may emit light with a wavelength at which the one of the gain peaks and one of the reflection peaks coincides. In the present LD, both the gain spectrum and the reflection spectrum are modified by adjusting the temperature of the SG-DFB region and that of the CSG-DBR region independently.

Abstract: A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.

Abstract: A bidirectional switch according to one embodiment switches bidirectionally the direction of current flowing between a first and a second terminal, and includes: first and second series circuit sections including first and second semiconductor switch elements that do not have a tolerance in a reverse direction, and first and second reverse current blocking diode sections serially connected to the first and second semiconductor switch elements in a forward direction. The first series circuit section and the second series circuit section are connected in parallel between the first and second terminals so that the forward directions of the first and second semiconductor switch elements face opposite to each other. Each of the first and second reverse current blocking diode sections is configured by connecting in parallel a diode containing GaN as a semiconductor material and a diode containing SiC as a semiconductor material.

Abstract: It is an object of the present invention to provide a sheet-shaped three-dimensional network aluminum porous body which is suitably used as current collector base materials of an electrode for a nonaqueous electrolyte battery and an electrode for a capacitor using a nonaqueous electrolytic solution, and an electrode, a capacitor and a lithium-ion capacitor, each using the sheet-shaped three-dimensional network aluminum porous body. For this object, the three-dimensional network aluminum porous body for a current collector of the present invention is a sheet-shaped three-dimensional network aluminum porous body, and a skeleton forming the aluminum porous body has a surface roughness (Ra) of 3 ?m or more, and preferably 3 ?m or more and 50 ?m or less.

Abstract: A method for manufacturing a semiconductor laser includes the steps of preparing a mold with a pattern surface having recesses, forming a stacked semiconductor layer including a grating layer, forming a resin part on the grating layer, forming a resin pattern portion on the resin part, forming a diffraction grating by etching the grating layer using the resin part as a mask, and forming a mesa-structure on the stacked semiconductor layer. Each of the recesses includes two end portions and a middle portion between the two end portions. A depth of at least one of the two end portions from the pattern surface is greater than that of the middle portion. The step of forming the mesa-structure includes the step of etching the stacked semiconductor layer so as to remove end portions of the diffraction grating in a direction orthogonal to a periodic direction thereof.

Abstract: A mounting method includes: holding a component at a position off a gravity center of the component; pressing the component to a solder provided on a mount face of a substrate; and adding pressing force to an opposite position of the component across the gravity center from the position held in the pressing of the component toward the mount face, after the pressing of the component.

Abstract: A method to control an LD (laser diode) is disclosed. The method compares the operating temperature of the LD with a transition temperature. When the former temperature exceeds the latter, the modulation current is set based on the bias current, which is independently determined by the APC loop. On the other hand, the operating temperature is less than the transition temperature; the modulation current is determined by the operating temperature.

Abstract: The present invention relates to an optical communications system that allows improving OSNR while suppressing the power increase of pumping light for distributed Raman amplification. In the optical communications system, an optical fiber is laid in a transmission section between a transmitter station (or repeater station) and a receiver station (or repeater station), and optical signals are transmitted from the transmitter station to the receiver station via the optical fiber. In the optical communications system, pumping light for Raman amplification, outputted by a pumping light source provided in the receiver station, is fed into the optical fiber via an optical coupler, and the optical signals are distributed-Raman-amplified in the optical fiber. The transmission loss and the effective area of the optical fiber satisfy, at the wavelength of 1550 nm, a predetermined relationship.

Abstract: A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.