Patents Assigned to Sumitomo Electric
  • OPTICAL TRANSCEIVER HAVING ENHANCED EMI TOLERANCE
    Publication number: 20120315051
    Abstract: An optical transceiver that reduces the EMI radiation leaked therefrom is disclosed. The optical transceiver includes a top cover and the bottom base to form a cavity into which a TOSA, a ROSA, and a circuit are set. The top cover provides a combed structure in a rear portion thereof, where the combed structure has a plurality of fins with a distance preferably less that quarter wavelength ?/4 of the noise wavelength to be reduced. The combed structure operates as a short stub for the electromagnetic wave traveling longitudinally in the cavity.
    Type: Application
    Filed: December 16, 2011
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hiroyasu Oomori, Daisuke Kawase, Hiromi Kurashima
  • FIXING BELT
    Publication number: 20120315418
    Abstract: Provided is a fixing belt which has a high effect of preventing offset and the like and is capable of forming a clear image, which has high adhesion between a surface layer and another layer, and which has no problems in terms of appearance. The fixing belt includes a tubular base, a surface layer provided as an outermost layer and composed of a fluororesin A, and a primer layer provided in contact with the surface layer, wherein the primer layer is composed of a material obtained by mixing a fluorine-containing ion conductive agent, such as a fluorine-containing alkali metal salt, with a fluororesin B.
    Type: Application
    Filed: June 22, 2011
    Publication date: December 13, 2012
    Applicants: SUMITOMO ELECTRIC FINE POLYMER, INC, SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shingo Nakajima, Jun Sugawara, Daisuke Shoji
  • Group-III Nitride Crystal Composite
    Publication number: 20120315445
    Abstract: III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way.
    Type: Application
    Filed: August 2, 2012
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Naho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata, Seiji Nakahata, Takuji Okahisa
  • METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20120315746
    Abstract: An impurity of a first conductivity type is implanted onto a silicon carbide substrate through an opening in a mask layer. First and second films made of first and second materials respectively are formed. It is sensed that etching of the first material is performed during anisotropic etching, and then anisotropic etching is stopped. An impurity of a second conductivity type is implanted onto the silicon carbide substrate through the opening narrowed by the first and second films. Thus, the impurity regions can be formed in an accurately self-aligned manner.
    Type: Application
    Filed: June 5, 2012
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shunsuke YAMADA, Takeyoshi MASUDA
  • METAL LAMINATED STRUCTURE AND METHOD FOR PRODUCING THE SAME
    Publication number: 20120315502
    Abstract: There is provided a metal laminated structure in which a first metal layer containing tungsten is provided on a first surface of a second metal layer containing copper and a third metal layer containing tungsten is provided on a second surface of the second metal layer opposite to the first surface, and the first metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the first surface of the second metal layer and the third metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the second surface of the second metal layer, and a method for producing the metal laminated structure.
    Type: Application
    Filed: December 27, 2010
    Publication date: December 13, 2012
    Applicants: A.L.M.T. Corp., Sumitomo Electric Industries, Ltd.
    Inventors: Koji Nitta, Shinji Inazawa, Akihisa Hosoe, Masatoshi Majima, Osamu Suwata, Hiroshi Yokoyama, Shinichi Yamagata, Yugaku Abe
  • METHOD FOR FORMING NITRIDE SEMICONDUCTOR DEVICE
    Publication number: 20120315742
    Abstract: A method for producing a nitride semiconductor device is disclosed. The method includes steps of: forming a channel layer, an InAlN doped layer sequentially on the substrate, raising a temperature of the substrate as supplying a gas source containing In, and/or another gas source containing Al, and growing GaN layer on the InAlN doped. Or, the method grows the channel layer, the InAlN layer, and another GaN layer sequentially on the substrate, raising the temperature of the substrate, and growing the GaN layer. These methods suppress the sublimation of InN from the InAlN layer.
    Type: Application
    Filed: June 6, 2012
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Keiichi YUI, Ken NAKATA, Isao MAKABE, Tsuyoshi KOUCHI
  • ALUMINUM POROUS BODY AND METHOD FOR PRODUCING THE SAME
    Publication number: 20120312692
    Abstract: Provided is a method for readily removing urethane resin without causing oxidation of aluminum, from an aluminum structure in which an aluminum film is formed on the surface of a urethane resin porous body having a three-dimensional network structure: a method for producing an aluminum porous body, including forming an aluminum film having a purity of 99.9% by mass or more on a surface of a urethane resin porous body having a three-dimensional network structure to provide an aluminum structure including the urethane resin porous body and the aluminum film, and subjecting the aluminum structure to a heat treatment at 370° C. or more and less than 660° C. in the air to remove urethane resin and to provide an aluminum porous body.
    Type: Application
    Filed: June 20, 2012
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Koutarou KIMURA, Akihisa HOSOE, Kazuki OKUNO, Hajime OHTA, Kengo GOTO, Junichi NISHIMURA
  • SEMICONDUCTOR DEVICE
    Publication number: 20120313112
    Abstract: A MOSFET includes a silicon carbide substrate, a drift layer made of silicon carbide and including a main surface having an off angle of 50° or more and 65° or less with respect to a {0001} plane, and a gate oxide film formed on and in contact with the main surface of the drift layer. The drift layer includes a p type body region formed to include a region in contact with the gate oxide film. The p type body region has an impurity density of 5×1016 cm?3 or more. A plurality of p type regions of p conductivity type located apart from one another in a direction perpendicular to a thickness direction of the drift layer are arranged in a region in the drift layer lying between the p type body region and the silicon carbide substrate.
    Type: Application
    Filed: June 6, 2012
    Publication date: December 13, 2012
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Wada, Takeyoshi Masuda, Misako Honaga, Toru Hiyoshi
  • DEVICE AND METHOD FOR TREATING BALLAST WATER FOR SHIP
    Publication number: 20120312757
    Abstract: A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
    Type: Application
    Filed: February 16, 2011
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES,LTD.
    Inventors: Munetsugu Ueyama, Ryusuke Nakai, Hideki Kashihara, Manabu Okui
  • OSCILLATOR CIRCUIT
    Publication number: 20120313719
    Abstract: An oscillator circuit includes a pair of negative-resistance circuits, a pair of transmission lines coupled to the pair of negative-resistance circuits respectively, a pair of pads that are provided symmetrically to each other with respect to the pair of transmission lines and are to be coupled to each other by a bonding wire, and a synthetic circuit to synthesize output signals of the pair of negative-resistance circuits.
    Type: Application
    Filed: June 8, 2012
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Takeshi Kawasaki
  • SINGLE CRYSTAL SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120315427
    Abstract: A single crystal silicon carbide substrate has a 4H-polytype crystal structure, has with nitrogen atoms doped as a conduction impurity with an atomic concentration of more than 1×1016/cm3, and has a main surface containing a circle having a diameter of 5 cm. The single crystal silicon carbide substrate includes only one of a facet region and a non-facet region. Thus, variation in nitrogen atom concentration in the single crystal silicon carbide substrate can be suppressed.
    Type: Application
    Filed: May 17, 2012
    Publication date: December 13, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Tsutomu HORI, Makoto Sasaki, Taro Nishiguchi, Shinsuke Fujiwara
  • Vehicle-mounted camera system
    Patent number: 8330815
    Abstract: The present invention has an object to provide a vehicle-mounted camera system capable of preventing the occurrence of only a smear in an area without a mask image on a picked up image, and substantially reducing a ghost and stray light. The vehicle-mounted camera system according to the present invention includes an imaging element (30a), an imaging lens (30c) disposed in front of the imaging element (30a), a superimposing means for superimposing a mask image on part of a picked up image of the imaging element (30a), and a light-shielding part (31b) arranged in a range corresponding to the mask image within the angle of view of the imaging lens (30c) for shielding part of incident light from the exterior.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: December 11, 2012
    Assignees: Autonet Works Technologies, Ltd., Sumitomo Wiring Systems, Ltd., Sumitomo Electric Industries, Ltd.
    Inventor: Masayuki Inoue
  • LASER APPARATUS AND LASER PROCESSING METHOD
    Publication number: 20120307849
    Abstract: The present invention relates to a laser apparatus having a structure for removing a skirt portion contained in pulsed light, and a laser processing method using the laser apparatus. The laser apparatus comprises a MOPA fiber laser light source which outputs pulsed light having a skirt portion with a light intensity lower than a predetermined value, and a saturable absorber which removes a skirt portion from the pulsed light outputted from the MOPA fiber laser light source.
    Type: Application
    Filed: May 22, 2012
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Yasuomi KANEUCHI, Motoki KAKUI
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20120309195
    Abstract: A method for manufacturing a high-quality semiconductor device having stable characteristics is provided. The method for manufacturing the semiconductor device includes the steps of: preparing a silicon carbide layer having a main surface; forming a trench in the main surface by removing a portion of the silicon carbide layer; and removing a portion of a side wall of the trench by thermal etching.
    Type: Application
    Filed: July 29, 2011
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Takeyoshi Masuda
  • THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY FOR CURRENT COLLECTOR AND METHOD FOR PRODUCING THE SAME
    Publication number: 20120308886
    Abstract: The present invention provides an electrode current collector for a secondary battery or the like, wherein a compressed part for attaching a tab lead to an end part of the three-dimensional network aluminum porous body to be used as an electrode current collector of a secondary battery, a capacitor using a nonaqueous electrolytic solution or the like is formed, and a method for producing the same. That is, the present invention provides a three-dimensional network aluminum porous body for a current collector having a compressed part compressed in a thickness direction for connecting a tab lead to its end part, wherein the compressed part is formed at a central part in the thickness direction of the aluminum porous body.
    Type: Application
    Filed: June 12, 2012
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kengo Goto, Akihisa Hosoe, Kazuki Okuno, Hajime Ota, Koutarou Kimura, Junichi Nishimura
  • METHOD FOR MANUFACTURING QUANTUM CASCADE LASER
    Publication number: 20120309123
    Abstract: A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming an etching mask having a striped pattern on the second semiconductor region; forming a semiconductor mesa structure having a mesa shape in cross section by etching the first and second semiconductor regions using the etching mask; forming an insulating layer over a top portion and side surfaces of the semiconductor mesa structure and the first semiconductor region; forming an opening in a portion of the insulating layer that is disposed on the top portion of the semiconductor mesa structure; and forming an electrode over the inside of the opening of the insulating layer, the top portion and side surfaces of the semiconductor mesa structure, and the first semiconductor region.
    Type: Application
    Filed: May 17, 2012
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yukihiro TSUJI
  • MAGNESIUM ALLOY STRUCTURAL MEMBER
    Publication number: 20120308809
    Abstract: A magnesium alloy structural member having excellent corrosion resistance is provided. The magnesium alloy structural member includes a magnesium alloy substrate that contains more than 7.5% by mass of Al and an anticorrosive layer formed on a surface of the substrate by chemical conversion treatment. The substrate contains a precipitate, typically, particles dispersed therein. The particles are made of an intermetallic compound containing at least one of Al and Mg and have an average particle size of 0.05 ?m or more and 1 ?m or less. The total area of the particles accounts for 1% by area or more and 20% by area or less. The anticorrosive layer includes a lower sublayer and a surface sublayer on the substrate in this order. The surface sublayer is denser than the lower sublayer. The substrate of the magnesium alloy structural member has high corrosion resistance because of a high Al content.
    Type: Application
    Filed: December 6, 2010
    Publication date: December 6, 2012
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Osamu Mizuno, Nobuyuki Okuda, Koji Mori, Masahiro Yamakawa, Masayuki Nishizawa, Takayasu Sugihara
  • Mold for nanoimprint lithography and method for forming the same
    Publication number: 20120308680
    Abstract: A mold for the nanoimprint lithography and a method for forming the mold are disclosed. The mold comprises a base socket, a plug chip and an adhesive. The plug chip provides a fine pattern to be transcribed in a top surface thereof. The base socket provides a pocket within which the plug chip is set such that the top surface thereof is pushed out from the top surface of the base socket.
    Type: Application
    Filed: May 25, 2012
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Naoko INOUE
  • SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE CRYSTAL WAFER, AND METHOD FOR FABRICATING SILICON CARBIDE CRYSTAL INGOT
    Publication number: 20120308758
    Abstract: A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.
    Type: Application
    Filed: May 18, 2012
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Tsutomu HORI, Makoto SASAKI, Taro NISHIGUCHI, Shinsuke FUJIWARA
  • LASER APPARATUS
    Publication number: 20120307847
    Abstract: The present invention relates to a laser apparatus having a structure for easily shortening a pulse. In the laser apparatus, as a result of a phase control unit adjusting a modulation period of an external modulator and an output period of pulsed light of a seed light source, it is possible to generate pulsed light which is outputted only during a period when the modulation period and the output period overlap each other.
    Type: Application
    Filed: May 31, 2012
    Publication date: December 6, 2012
    Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shinobu TAMAOKI, Motoki KAKUI