Abstract: A ceramic sintered member is used as an insulating substrate for mounting of an electronic part and bonded to a copper plate or aluminum plate on at least part of a front face or backside face of the insulating substrate. A powder material to form the ceramic sintered member includes alumina as a main ingredient and further includes as subsidiary ingredients partially stabilized zirconia and magnesia. Content of the partially stabilized zirconia is 1 to 30 percent by weight relative to the entire powder material. Content of the magnesia relative to the entire powder material is within a range 0.05 to 0.50 percent by weight. Mole fraction of yttria in the partially stabilized zirconia being is a range of 0.015 to 0.035. 80 to 100 percent of the zirconia crystals included in the ceramic sintered member is in the tetragonal crystal phase.

Abstract: A package for high frequency usages 10 has a notched area 16 on each longitudinal end of a substantially rectangular heat sink plate 11 for fastening the package to a base 20 with a screw. The package includes a joined member 17 formed by joining a surface of a ring-like frame member 12 made of a ceramic material to the longitudinal center of a surface of heat sink plate 11 and joining another surface to an external connection terminal 15. The other surface of heat sink plate 11 presents a curved protruding shape 18 bowing from its longitudinal ends toward its longitudinal center, so that curved protruding shape 18 causes at least an area of the other surface heat sink plate 11 that corresponds to an area dedicated for mounting a semiconductor device 19 within ring-like frame member 12 to make a close contact with base 20 when the package is fastened to base 20 by the screw at notched areas 16.

Abstract: A package for high frequency usages 10 has a notched area 16 on each longitudinal end of a substantially rectangular heat sink plate 11 for fastening the package to a base 20 with a screw. The package includes a joined member 17 formed by joining a surface of a ring-like frame member 12 made of a ceramic material to the longitudinal center of a surface of heat sink plate 11 and joining another surface to an external connection terminal 15. The other surface of heat sink plate 11 presents a curved protruding shape 18 bowing from its longitudinal ends toward its longitudinal center, so that curved protruding shape 18 causes at least an area of the other surface heat sink plate 11 that corresponds to an area dedicated for mounting a semiconductor device 19 within ring-like frame member 12 to make a close contact with base 20 when the package is fastened to base 20 by the screw at notched areas 16.

Abstract: The present invention provides a high heat dissipation plastic package and a method for making the same that provides an inexpensive, thin high heat dissipation plastic package with good bonding precision and minimal bleeding of adhesive resin. A Cu foil resin film is formed by bonding an adhesive resin to a Cu foil and pre-forming, at an essentially central position, a cut-out for a cavity used to mount a semiconductor element. The Cu foil resin film is bonded using the adhesive resin directly to a heat dissipation plate. A conductor wiring pattern is formed on the Cu foil resin film. Furthermore, the heat dissipation plate includes a stopping section used to prevent resin from bleeding onto a cavity when bonding with the adhesive resin of the Cu foil resin film.

Abstract: The present invention provides a high heat dissipation plastic package and a method for making the same that provides an inexpensive, thin high heat dissipation plastic package with good bonding precision and minimal bleeding of adhesive resin. A Cu foil resin film is formed by bonding an adhesive resin to a Cu foil and pre-forming, at an essentially central position, a cut-out for a cavity used to mount a semiconductor element. The Cu foil resin film is bonded using the adhesive resin directly to a heat dissipation plate. A conductor wiring pattern is formed on the Cu foil resin film. Furthermore, the heat dissipation plate includes a stopping section used to prevent resin from bleeding onto a cavity when bonding with the adhesive resin of the Cu foil resin film.

Abstract: (1) A thermal enhanced type of BGA package, in which a metal heat sink is joined to one side of a plastic circuit board which has a cutout space in the central portion, comprised of a clamping member joining the plastic circuit board and the heat sink. A caulking member, a rivet, a screw, an eyelet, or a tubular rivet could be used as the clamping member. It is preferable that a dam member is definitely attached by the clamping member. (2) Another thermal enhanced type of BGA package, in which a circuit pattern is provided in the plastic circuit board and the heat sink and/or the dam member are electrically connected to a part of the circuit pattern through the clamping member. It is preferable to use the clamping member coated by solder.

Abstract: A solder coated lid for a package for an electronic device has a lead-free solder layer comprising a Sn—Sb based solder with a liquidus temperature of at least 220 degrees C. provided on at least a region of the lid where the lid is to be joined to a base of a package. The lid can be joined to a base of a package at a low temperature, thereby reducing vaporization of solder components and adhesion thereof to electronic devices within the package.

Abstract: A connected construction of a high-frequency package and a wiring board have an excellent high-frequency transmission characteristic without degradation of the transmission characteristic of even high-frequency signals in a wide band ranging from 20 GHz to 80 GHz in the case of connecting a high-frequency package to a wiring board. A distance between conductive vias and conductive vias to connect grounds formed on both main surfaces of a high-frequency transmission line substrate constituting the high-frequency package, and a distance between conductive vias and conductive vias to connect grounds formed on both main surfaces of the wiring board on which the high-frequency package is mounted, are set in consideration of the dielectric constant of the high-frequency transmission line substrate and the dielectric constant of the wiring board in order to improve the high-frequency transmission characteristic between the high-frequency transmission line substrate and the wiring board.

Abstract: In a chip package, when a Ni/Au layer is formed by electroless plating, there is no problem with density increasing of interconnections and the like, since leads for plating and tie bars are not formed. However, the adhesive strength of solder balls to ball pads is low, so that the adhesion tends to be unstable. In the present invention, no leads for plating are formed, while the adhesive strength of solder balls to ball pads is improved by electroplating the ball pads with a Ni/Au layer. In addition, an increase in the density of interconnections and an improvement of the electrical properties is also obtained. The Ni/Au layer is formed by electroplating on the base metal layer surface which is not covered with a DFR (Dry Film Resist) by applying an electric current to the base metal layer.

Abstract: A method of fabricating a multilayer ceramic substrate includes stacking one or a plurality of unfired ceramic greensheets on one or both sides of a previously fired ceramic substrate, thereby forming a stack, each unfired ceramic greensheet having a firing temperature substantially equal to or lower than a firing temperature of the previously fired ceramic substrate, stacking a restricting greensheet on the unfired ceramic greensheet composing an outermost layer of the stack, the restricting greensheet having a higher firing temperature than each unfired ceramic greensheet, firing the stack at the firing temperature of the unfired ceramic green sheets with or without pressure applied via the restricting greensheet while the stack is under restriction by the restricting greensheet, thereby integrating the stack, and eliminating remainders of the restricting greensheet after the firing step.

Abstract: A thick-film resistor contains RuO2 and an SiO2—B2O3—K2O glass having a composition of 60 wt %≦SiO2≦85 wt %, 15 wt %≦B2O3≦40 wt %, 0.1 wt %≦K2O≦10 wt %, and impurity ≦3 wt %. A ceramic circuit board includes a thick-film resistor printed on it, the thick-film resistor containing RuO2 and an SiO2—B2O3—K2O glass having the above composition.

Abstract: In a chip package, when a Ni/Au layer is formed by electroless plating, there is no problem with density increasing of interconnections and the like, since leads for plating and tie bars are not formed. However, the adhesive strength of solder balls to ball pads is low, so that the adhesion tends to be unstable. In the present invention, no leads for plating are formed, while the adhesive strength of solder balls to ball pads is improved by electroplating the ball pads with a Ni/Au layer. In addition, an increase in the density of interconnections and an improvement of the electrical properties is also obtained. The Ni/Au layer is formed by electroplating on the base metal layer surface which is not covered with a DFR (Dry Film Resist) by applying an electric current to the base metal layer.

Abstract: A highfrequency package has an excellent high-frequency characteristic in a band from quasi-millimeter wavelength to 90 GHz frequency. A sealed construction can be easily manufactured, leading to a reduction in cost, and is excellent in strength.

Abstract: A high-frequency ceramic package 10 comprises a ceramic frame plate 12 brazed to a jointed metal plate 11 on the surface thereof, the jointed metal plate 11 including a substantially rectangular shaped first metal plate 17 which has a hollowed portion 19 at a central portion thereof and a second metal plate 18 which is fitted in the hollowed portion 19 in a state in which the first and second metal plate 17, 18 are jointed together in end-to-end relationship. The first metal 17 is close to the ceramic frame plate in thermal expansion coefficient, and the second metal plate 18 is made from a material having a high level of heat-sinking characteristics. A concave cavity 16 defined between the second metal plate 18 and the ceramic frame plate 12 has a semiconductor electronic component mounting portion on a bottom 16a of the cavity 16.

Abstract: A metal lid for use in hermetic sealing of a semiconductor package comprises a lid body comprising a metal plate having a solder layer secured to the entire surface of the metal lid by cladding. The lid is placed in position on a substrate and can seal the resulting package by heating to melt the solder layer. The lid can be readily mass-produced and can seal the package with high seal reliability and without deposition of solder balls on the inner wall of the package.

Abstract: In a chip package, when a Ni/Au layer is formed by electroless plating, there is no problem with density increasing of interconnections and the like, since leads for plating and tie bars are not formed. However, the adhesive strength of solder balls to ball pads is low, so that the adhesion tends to be unstable. In the present invention, no leads for plating are formed, while the adhesive strength of solder balls to ball pads is improved by electroplating the ball pads with a Ni/Au layer. In addition, an increase in the density of interconnections and an improvement of the electrical properties is also obtained. The Ni/Au layer is formed by electroplating on the base metal layer surface which is not covered with a DFR (Dry Film Resist) by applying an electric current to the base metal layer.

Abstract: A package for housing a photosemiconductor including a plurality of united-inner/outer-portions type leads each of which has an inner lead portion and an outer lead portion continuously formed into one body; a conductive frame having a side wall and an opening provided on the side wall for introducing the inner lead portions of the plurality of united-inner/outer-portions type leads into an inside of the conductive frame; and a ceramic plate which has a side face for stopping up the opening of the side wall of the conductive frame. The ceramic plate has a plurality of through holes on the side face for inserting the inner lead portions of the plurality of united-inner/outer-portions type leads therethrough. The ceramic plate is joined with the conductive frame so that the side face stops up the opening of the conductive frame.

Abstract: An image capture system in which images of a plurality of divided parts of an object are photographed includes at least one movable mirror disposed over the object so as to reflect a part of the object to be photographed, a mirror driver for changing an angle of the movable mirror relative to the object so that the part of the object reflected on the movable mirror is changed to another part of the object to be photographed, a camera for photographing the part of the object reflected on the movable mirror, and an image processor capturing an image signal from the camera every time the angle of the movable mirror is changed. The movable mirror is located a predetermined value or above higher than the object so that the image photographed by the camera is prevented from being unfocused upon angular change of the movable mirror. The movable mirror is preferably located higher than the object by 30 cm or more.

Abstract: A ball-grid array connector structure for an electronic package in which the ball pitch can be reduced to increase the packaging density has a plastic substrate having at least one hollow through-hole and an electrode covering the wall of the through-hole and forming an electrode pad surrounding the through-hole on each surface of the substrate. A metallic ball is joined, either directly or through a solder or a combination of a metallic bump and a solder, to the electrode pad on at least one surface of the substrate at the position of the through-hole. The connector structure can be formed either by sealing an open end of the through-hole on the side to which the ball is not joined, or increasing the pressure within the through-hole by a pressure-control mechanism, before the through-hole is blocked by reflowing the ball itself or the metallic bump or solder used to connect the ball.

Abstract: A thick-film resistor paste consists of a first glass powder, a second glass powder, a conductive material powder, and an organic vehicle. A quantity of the first glass powder mixed is larger than a quantity of the second glass powder mixed. The first glass powder contains, in total, 95 percentage by weight or above of CaO of 20 to 26 percentage by weight, SiO.sub.2 of 37 to 59 percentage by weight, Al.sub.2 O.sub.3 of 5 to 13 percentage by weight and B.sub.2 O.sub.3 of 8 to 28 percentage by weight. The second glass powder contains, in total, 85 percentage by weight or above of SiO.sub.2 of 53 to 72 percentage by weight, B.sub.2 O.sub.3 of 20 to 30 percentage by weight and Na.sub.2 O of 1 to 7 percentage by weight. The thermal expansion coefficient of the first glass powder is larger by 0.5.times.10.sup.-6 /deg or above than the thermal expansion coefficient of the second glass powder.