Abstract: An end effector for holding substrates has a multi-layered main body and a fluid channel which is provided in the main body. The main body has a receiving end and a fastening end, and include at least two layers, wherein at least one of the layers is not inherently stable, and is formed from a synthetic material film.

Abstract: A semiconductor structure bonding apparatus is disclosed. The apparatus may include a leveling adjustment system configured to provide leveling adjustment of upper and lower block assemblies of the apparatus. In some cases, the leveling adjustment system may include a plurality of threaded posts, differentially threaded adjustment collars, and leveling sleeves. In some instances, the leveling adjustment system further may include a plurality of preload springs configured to provide a given preload capacity and range of adjustment. In some instances, the leveling adjustment system further may include a load cell through which one of the threaded posts may be inserted. In some embodiments, the upper block assembly further may include a reaction plate configured to reduce deformation of the upper block assembly. In some embodiments, the upper block assembly further may include a thermal isolation plate configured to provide compliance deflection and being of monolithic or polylithic construction, as desired.

Abstract: A sealing ring for attaching to a cover ring of a wafer treating device has an annular carrier and a sealing lip which is releasably attached to the carrier.

Abstract: The application describes several methods and an apparatus for treatment of at least partial areas of a substrate. In said methods, at least one liquid is applied to at least one partial area of the substrate and electromagnetic radiation is introduced into this liquid, in order to achieve a desired effect in accordance with the respective method. In one method, radicals are generated in the liquid by means of UV radiation prior to application of the liquid, wherein generation of the radicals occurs directly before applying the liquid to the substrate, such that at least a portion of the radicals reaches the substrate.

Abstract: A suction apparatus for an end effector has a main body, which has a through-channel and a contact surface, and a sealing lip. The contact surface has an edge and recesses, wherein the through-channel issues into the recesses and the recesses terminate in front of the edge. The main body has a base portion and a fastening portion, which adjoins the base portion. In the fastening portion connection channels are provided which are in fluid communication with the through-channel and extend from the edge of the fastening portion. An end effector and a method of producing an end effector are also shown.

Abstract: A light source arrangement for a photolithography exposure system comprises at least three light sources with different wavelengths, and a beam splitting unit comprising at least three inputs, one output, and at least two reflecting faces. An input is assigned to each light source and each reflecting face. The reflecting face reflects light that is emitted from the light source assigned to a corresponding input thereof into the output. The three light sources are arranged on three different sides around the beam splitting unit.

Abstract: A method for coating a substrate with a lacquer is disclosed. First, the lacquer is uniformly applied to the substrate. Then, the solvent proportion of the lacquer applied to the substrate is reduced, and the coated substrate is exposed to a solvent atmosphere. In some embodiments, the lacquer is heated. The invention also relates to a device for planarizing a lacquer layer.

Abstract: The method and the apparatus prevents the deformation of a substrate, e.g. a wafer, supported with its edge area or periphery at a support or chuck, and also avoids the damage and/or contamination of the active area of the substrate. In particular, the substrate is mechanically supported at its peripheral or edge portion, namely in the non-active area of the substrate, only; an additional non-mechanical extended support is provided in the active area by a gas cushion. The gas cushion is generated by a controllable nozzle or purge for a distinct and controlled compensation of the downward deflection of the substrate.

Abstract: A device for treating a disc-shaped substrate is disclosed, comprising a support which has a support face for the disc-shaped substrate and a support adapter which can be coupled to the support and can support a mask used for treating the disc-shaped substrate, wherein an interface is provided which detects the coupling of the support adapter to the support and wherein a control system is provided which cooperates with the interface and detects whether the support adapter is coupled to the support, in particular whether the interface is occupied. A support adapter for use in a device of this type is further disclosed.

Abstract: A spacer displacement device for a wafer illumination unit comprises an actuator, a spacer which can be displaced between an active and an inactive position by the actuator, and a force transmission element which is coupled to the actuator. The force transmission element consists of wire.

Abstract: A method for curing at least in part a photoresist applied to a substrate comprises the following steps: The substrate coated with the photoresist is arranged on a support. The photoresist is subjected to a suitable temperature for curing the photoresist for a first predetermined time period. After the first predetermined time period has passed, the substrate is lifted from the support, rotated, re-placed onto the support and subjected to a suitable temperature for curing the photoresist for a second predetermined time period. This method can be performed with a device for curing at least in part a photoresist applied to a substrate, comprising a chamber, a support which is arranged in the chamber and on which the substrate can be arranged, and a rotating device for rotating the substrate between a first and a second phase of the curing of the photoresist.

Abstract: A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Abstract: A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.

Abstract: The invention relates to a method for regulating a light source of a photolithography exposure system which comprises a plurality of LEDs, by means of the following steps: the light output of the individual LEDs in specific wavelength ranges is detected, and the detected light output is compared with a desired light output distribution over the entire spectrum. The LEDs are operated such that the desired spectral light output distribution is achieved in the most precise manner possible. The invention also relates to an exposure assembly for a photolithography device, having a light source which comprises a plurality of LEDs, a control means which controls the electrical power supplied to the individual LEDs, and a sensor which can detect the light output of the LEDs in the respective ranges of the wavelengths.

Abstract: A device for locating and engaging a notch on the perimeter of a circular wafer includes a notch locating component and a first plate. The notch locating component is configured to move linearly along a first axis and includes a front elongated component extending along a second axis perpendicular to the first axis and having a front surface, a back surface opposite to the front surface and a first protrusion extending from the front surface of the elongated component. The first protrusion has a shape complementing the shape of a notch formed on the perimeter of a circular wafer. As the notch locating component is driven toward the perimeter of the circular wafer along the first axis, a distance between the back surface of the elongated component and a front surface of the first plate is measured and the value of the measured distance is used to determine engagement of the first protrusion with the notch.

Abstract: A wafer bonder apparatus, includes a lower chuck, an upper chuck, a process chamber and three adjustment mechanisms. The three adjustment mechanisms are arranged around a top lid spaced apart from each other and are located outside of the process chamber. Each adjustment mechanism includes a component for sensing contact to the upper chuck, a component for adjusting the pre-load force of the upper chuck, and a component for leveling the upper chuck.

Abstract: A chuck for aligning a first planar substrate in parallel to a second planar substrate includes a top plate having a top surface for arrangement of the first planar substrate. A bottom plate is at least one distance measuring sensor configured to measure a distance between the top surface of the top plate and a surface of the second planar substrate, and at least three linear actuators in contact with the top plate and the bottom plate. The method for setting a gap between the first and second planar substrate includes measuring the thickness of the first planar substrate and measuring between a surface of the second planar substrate and the top surface of the top plate. The tilt adjusts between a top surface of the first planar substrate or the chuck and the surface of the second planar substrate by using at least three linear actuators of the chuck.

Abstract: A method for coating substrates provided with vias uses a first step in which the substrate is conditioned and a second step in which the substrate is coated with an electrically insulating material such that the vias are filled up completely.

Abstract: A method of removing post-laser debris from a wafer includes, for an embodiment, forming a sacrificial layer over a layer to be patterned, patterning the sacrificial layer and the layer to be patterned using laser ablation, and removing the sacrificial layer and debris deposited on the sacrificial layer with water. The sacrificial layer includes a water soluble binder and a water soluble ultraviolet (UV) absorbent. Systems for removing the post-laser debris are also described.

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.