Abstract: A CMOS voltage level shifter that is comprised of a pull-up device coupled between a first voltage supply and an node to pull up that node to the voltage of the first voltage supply. The pull-up device is responsive to a first voltage signal. A pull-down device is also included that is coupled between the node and a reference voltage supply to pull down that node to a voltage of the reference voltage. The pull-down device is responsive to second and third voltage signals. A feedback circuit is included that provides the second voltage signal to the pull-down device. A level shifted output voltage signal is provided at the node.

Abstract: A method and apparatus for pseudo aligned transfers to memory for processors, peripherals and memories. Alignment logic, typically coupled to a peripheral, receives a plurality of data bytes from a processor. The alignment logic uses a control header transferred with the data bytes to determine whether the data bytes require re-alignment. To effect re-alignment, the alignment logic combines, rotates, and masks the data bytes as indicated by the control header.

Abstract: The invention concerns fabrication of oxide-filled isolation trenches in integrated circuits. The invention etches a network of trenches in the surface of a uniformly doped wafer which has experienced no substantial processing steps. Such a wafer will have little, if any, surface damage. Such a wafer will etch to the same depth everywhere, because two major factors which affect etching rate are (a) surface damage and (b) doping non-uniformity, and these factors are absent. The trenches are then filled with oxide. They define islands upon which devices (such as transistors) may now be fabricated.

Abstract: A signal generator and method that is tolerable to supply voltage fluctuations and differentials. A current switch is driven that is independent of the supply voltage. By clamping the slewing voltage at the gate of a transistor driver, the difference between the clamped gate voltage and the threshold turn on voltage of the driver will be constant with respect to the supply voltage. This will cause the transition edges of the driver's output voltage to be constant with respect to the supply voltage. This technique minimizes variations in the output signal edge transitions as the supply voltage varies over various tolerance ranges. Because this technique increases the control of the transition edges in the output signal, it is possible to generate much slower edges and still maintain a consistent transition voltage shape with variations in the supply voltage and the symbol width.

Abstract: A high-frequency phase locked loop circuit effectively increases the maximum frequency associated with the CMOS technology. The circuit includes a first phase-locked loop sub-circuit having an input and an output, a second phase-locked loop sub-circuit having an input coupled to the input of the first phase-locked loop circuit and an output, and an exclusive-OR circuit having first and second inputs coupled to the outputs of the first and second phase-locked loop sub-circuits and an output. The first and second phase-locked loop may be arranged in parallel or in a master/slave relationship.

Abstract: A power interface adapter that provides device power connections in a universal burn-in board system. The power interface adapter is a low-cost printed circuit board which interfaces on a one-to-one basis with each burn-in board device socket, thus providing a complete power interface connection. The power interface adapter offers a significant improvement over the present universal burn-in board power connection methods by eliminating device power related manufacturing limitations presently placed on universal burn-in board designs.

Abstract: A semiconductor fuse and method for fabricating the same An insulating layer is provided and a trench formed therein. A fusible link is then formed across the insulating layer and trench and conformal therewith. The link has a break region of minimum thickness and width at an intersection of a sidewall and bottom surface of the trench.

Abstract: The invention concerns integrated circuits in which a MACRO is embedded in a standard cell array. One level of metal is devoted exclusively to non-local interconnect, and a layer of polysilicon is devoted to local interconnect, thereby saving significant space.

Abstract: Apparatus and associated methods for improving I/O performance in a computing system which includes one or more MPUs and one or more IOPs. I/O requests are queued by a requesting MPU in a memory shared with one or more IOPs. Each IOP is associated with a queue. Each IOP may continue processing queued I/O requests after completing processing on an earlier request. In addition, each MPU is associated with a queue shared with the IOPs. When an IOP completes processing of an I/O request, a completion message is added to the requesting MPU's queue and an interrupt is generated for that MPU. The MPU services all completion messages in its queue when the interrupt is processed. A threshold value is associated with each MPU queue. The threshold value indicates the minimum number of completed I/O requests required before an interrupt request is generated to the MPU.

Abstract: The invention concerns storage of correction tables for digitizing tablets. A digitizing tablet produces data indicative of position of a stylus. The data does not, in general, exactly indicate the position; errors exist. For example, a tablet may produce a data pair indicating a Cartesian position of (5.0, 6.0) when the position is actually (4.9, 6.1). Correction tables are used to correct the errors. These tables may be viewed as containing correct data for each possible pair of data produced by the tablet. Thus, in this example, a user would (a) receive (5.0, 6.0) from the tablet, (b) look up this data in the table, and (c) find that the actual position which corresponds to this data is (4.9, 6.1). The invention concerns compression of such tables, to reduce storage space.

Abstract: There is provided electronic devices with dielectric layers obtained from boron-oxide doped, spin-on glass formulations which form glassy layers with high oxygen resistance. Suitable electronic devices include integrated circuits. With high oxygen resistance, the glassy layer formed maintains its integrity in subsequent processing. Also provided is a method for preparing boron-oxide doped, spin-on glass formulations with a high carbon content having a silane adhesion promoter and boron-dopant incorporated therein.

Abstract: An electrically programmable floating gate memory cell is gate programmed with tunneling electrons and is not drain erasable. The memory cell comprises a semiconductor substrate, source and drain regions disposed in the semiconductor substrate, a floating gate conductor adjacent to the source and drain regions, a tunnel oxide layer disposed between the floating gate conductor and the source and drain regions, and a control gate conductor adjacent to the floating gate conductor. The source and drain regions each include a high impurity concentration portion and a low impurity concentration portion. The impurity concentration of the low impurity concentration portion is sufficiently low to prevent a substantial threshold voltage variation when a predetermined range of voltages are supplied in a first polarity between the control gate conductor and the drain region.

Abstract: A picture element sensor circuit in an image array scanner is tested by driving a reset FET with a controllable voltage to set the reverse-bias voltage across the photo-diode at any selectable level of test voltage. In this way each pixel sensor circuit in the array may be tested as if it had received a desired amount of illumination. Alternatively, the drive voltage for the reset transistor is provided over the column output line. The controllable test voltage can be applied to the column line when no row access enable signal is applied to the array. In this situation the column line source follower circuit is inhibited by the row access FETs. Thus, a separate test voltage can be driven onto the column line, through a reset switch, and connected through the pixel sensor reset transistor to the pixel sensor photo-diode. The variable reset voltage, that is driven onto the column line, can be varied between ground and the normal bias voltage V.sub.

Abstract: An apparatus and method for storing a momentarily applied binary signal in a non-volatile memory cell and for automatically returning to a state which is indicative of the applied binary signal upon power-up of the non-volatile memory. In one aspect, the non-volatile memory is connected to first and second power busses between which a power source supplies an operating voltage and a programming voltage of a substantially greater magnitude than the operating voltage. The non-volatile memory comprises a memory circuit which is connected between the first and second power busses. The memory circuit includes an input node, an output node, and a non-volatile element which is connected to the input and output nodes. The memory circuit responds to an input binary signal from the input node by latching in a first binary state which is indicative of the input binary signal.

Abstract: A method is shown for polishing a workpiece such as a semiconductor wafer. A polishing composition is first formed which includes (1) a polishing media particle; and (2) a film forming binder for suspending the particle and forming a temporary film on an exposed surface of the workpiece, the temporary film being dissolvable in a subsequently applied polishing wash, whereby the polishing media particle is freed to polish the workpiece. The polishing composition is applied to the surface of the semiconductor wafer in a spin coating operation and thereafter cured in a hot plate bake or a furnace operation. In order to polish the workpiece, a polishing wash is applied to either or both of the surface of the workpiece or a polishing pad and thereafter causing the pad to be sufficiently proximate to the surface of the workpiece at a pressure and for a time sufficient to polish and planarize the workpiece.

Abstract: A procedure for scheduling multiple process requests for read/write access to a disk memory device within a computer system. The procedure considers disk characteristics, such as the number of sectors per track, the number of tracks per cylinder, speed of disk rotation and disk controller queuing capability in determining the optimal order for executing process requests. Process requests are placed in packets within an execution queue, each packet including up to a predetermined maximum number of requests. Within the packets, the process requests are sorted in ascending/descending order by the cylinder number to which the requests desire access, while within each cylinder the requests are placed in next-closest-in-time sequence.

Abstract: A method whereby a host computer system is informed of the drive status in a disk array when one or more of the disk drives fail. A data pattern (timestamp or status code) is written on each of the disk drives in service in the array when an event occurs which changes the operating state of an array. The state of an array changes only when the array is configured, unconfigured, a disk drive fails, parity is marked inconsistent or the array is restored. The timestamp includes a binary number to allow the system to determine the status of each disk drive in the array. At each state, the timestamp on each of the operating disk drives is updated to reflect the number of operating disk drives and the status of the parity data. The distinct binary numbers that result when the array changes states allow the system to maintain the data integrity of the array.

Abstract: The invention concerns the simultaneous display of video data and text data on a computer display. The invention stores both types of data in display memory. Transition codes mark the separation between the two types. The invention converts each type of data into signals which a CRT display can understand. The invention changes the type of conversion, as appropriate, when transition codes are reached.

Abstract: A high performance scaleable hardware architecture for a disk array storage subsystem which supports RAID modes 0, 3, 4 and 5. The architecture features a high bandwidth parity calculation engine, a buffered PCI interface operating at the full speed of the PCI bus, and a dedicated local memory. The dedicated local memory is dual ported so that PCI and parity operations may operate concurrently. The architecture of the disk array controller allows parity calculations and memory block moves to occur without interfering with the controller processor or its associated memory, freeing the controller processor to manage array task control. The array controller configuration allows simultaneous operation of data block moves between storage I/O devices and local memory; data block moves between host SCSI connections and local memory; parity calculations; and normal CPU memory fetches, queued operations for block moves and queued operations for parity tasks.

Abstract: A Video-On-Demand (VOD) system including a plurality of video storage devices; an asynchronous transfer mode (ATM) telephony technology network connected to provide video data to a plurality of subscribers; and a unique video server coordinating the conversion and transfer of video data from computer technology devices to the ATM telephony technology network.