Abstract: A semiconductor device having a thyristor is manufactured in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices. According to an example embodiment of the present invention, a thyristor is formed having some or all of the body of the thyristor extending above a substrate surface of a semiconductor device. The semiconductor device includes at least one transistor having source/drain regions formed in the substrate prior to the formation of the thyristor. One or more layers of material are deposited on the substrate surface and used to form a portion of a body of the thyristor that includes anode and cathode end portions. Each end portion is formed having a base region and an emitter region, and at least one of the end portions includes a portion that is in the substrate and electrically coupled to the transistor. A control port is formed capacitively coupled to at least one of the base regions.

Abstract: A reference cell produces a voltage rise on a bit line that is proportional to, and preferably half of, the voltage rise on another bit line produced by a TCCT based memory cell in an “on” state. The reference cell includes an NDR device, a gate-like device disposed adjacent to the NDR device, a first resistive element coupled between the NDR device and the bit line, and a second resistive element coupled between a sink and the bit line. Resistances of the first and second resistive elements are about equal and about twice as much as the resistance of a pass transistor of the a TCCT based memory cell.

Abstract: A medical device comprising a supporting structure having a coating on the surface thereof, the coating containing a therapeutic substance, such as, for example, a drug. Supporting structures for the medical devices that are suitable for use in this invention include, but are not limited to, coronary stents, peripheral stents, catheters, arterio-venous grafts, by-pass grafts, and drug delivery balloons used in the vasculature.

Abstract: A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment of the present invention, the thyristor-based semiconductor device is manufactured having an extended portion that is outside a current path through the thyristor and that capacitively couples a conductive structure to a portion of the thyristor for controlling the current through the path. In one particular implementation, the extended portion extends from a base region of the thyristor and is outside of a current path through the base region and between an adjacent base region and an adjacent emitter region. A gate is formed capacitively coupled to the base region via the extended portion. In this manner, the control of the thyristor with the gate exhibits increased capacitive coupling, as compared to the control without the extended portion.

Abstract: A semiconductor device having a thyristor-based memory device exhibits improved stability under adverse operating conditions related to temperature, noise, electrical disturbances and light. In one particular example embodiment of the present invention, a semiconductor device includes a thyristor-based memory device that uses a shunt between a base and emitter region in a thyristor that effects a leakage current in the thyristor. The thyristor includes a capacitively coupled control port and anode and cathode end portions. Each of the end portions has an emitter region and an adjacent base region, and the current shunt is located between the emitter and base region of one of the end portions of the thyristor.