Abstract: An electronic circuit, integrated circuit, and method for a bias-less Miller clamp protection circuit, electrically coupled to an output of a driver circuit and to an input gate of a semiconductor switch device, for dynamically protecting the semiconductor switch device from turning from an off state to an on state in response to a parasitic Miller turn-on signal at the gate, regardless of the bias-less Miller clamp protection circuit having, or lacking, a power supply that provides electrical power to the bias-less Miller clamp protection circuit. The semiconductor switch device can include one or more GaN switch devices. The bias-less Miller clamp protection circuit does not consume any current during normal operation of the electronic circuit and also does not cause any interference to the normal operation.

Abstract: An electrical circuit includes a ground-referenced transistor and a non-ground-referenced transistor configured in a half-bridge topology. The non-ground-referenced power transistor has a first conducting electrode coupled to a high voltage power supply, a control electrode coupled to a high-side pre-driver, and a second conducting electrode coupled to a switch node. The electrical circuit further includes a boot-strapped capacitor having a bottom plate coupled to the second conducting electrode and a top plate coupled to the high-side pre-driver, and an interface coupled to a first sense device for sensing a voltage at the top plate, a second sense device for sensing a voltage at the bottom plate, and a charging device for selectively increasing the voltage at the top plate. The interface controls the charging device based on the voltage at the top plate and the voltage at the bottom plate.

Abstract: A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.

Abstract: A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.

Abstract: A multi-band RF power amplifier circuit fabricated using GaN technology includes a RF power amplifier coupled to a multi-band RF switch without an intervening impedance matching network between the RF power amplifier and the multi-band RF switch. The multi-band RF switch includes a plurality of Unit HEMT cells. In one IC package, the RF power amplifier, the multi-band RF switch, a controller for controlling the switch and all connection therebetween are totally contained within the IC package. In another IC package, the RF power amplifier and the multi-band RF switch are disposed on a single substrate.

Abstract: An adjustable threshold power limiter circuit. A number of switching elements are included with at least a first and second switching element that each has a first terminal, a second terminal, and an insulated gate terminal. The switching elements forming a conductive path between its first and second terminals based on a voltage between its insulated gate terminal and one of its first or terminal exceeding a threshold. A conductive path is present with a series connection of the switching elements between a signal input and a reference potential. A controller is included and is electrically coupled to each insulated gate terminal of each switching element to independently provide to each insulated gate terminal either an on voltage or an off voltage.

Abstract: An integrated radio frequency (RF) switch and method of outputting one RF signal from a plurality of RF signals is provided. The integrated RF switch comprises an input decoder, a plurality of level shifter/drivers, a negative voltage generator and a dynamic bias circuit. The input decoder determines which one of the plurality of RF signals to output. Each one of the plurality of level shifter/drivers controls output of one of the plurality of RF signals. The negative voltage generator creates a negative voltage to drive the plurality of level shifter/drivers. The dynamic bias circuit generates a bias current for the plurality of level shifter/drivers, detects a change of state from the input decoder, generates a pulse in response to detecting the change of state, and increases the bias current for the plurality of level shifter/drivers for a duration of the pulse to decrease a switching time between two RF signals.

Abstract: A HEMT cell includes two or more gallium nitride (“GaN”) high-electron-mobility transistor (“HEMT”) devices electrically connected in series with each other. The HEMT cell includes a HEMT cell drain, a HEMT cell source, and a HEMT cell gate. The HEMT cell drain connects with the drain of a first GaN HEMT device in the series. The HEMT cell source connects with the source of a last GaN HEMT device in the series. The HEMT cell gate connects to a first two-dimensional electron gas (“2DEG”) gate bias resistor that connects with the gate of the first GaN HEMT device. The HEMT cell gate connects to a second 2DEG gate bias resistor that connects with the gate of the second GaN HEMT device. The first and second 2DEG gate bias resistors are located in a 2DEG layer of the HEMT cell. A multi-throw RF switch is also disclosed.