Patents Assigned to Taiwan Semiconductor Manfacturing Company, Ltd.
  • LOCOS field oxide and field oxide process using silicon nitride spacers
    Patent number: 5895257
    Abstract: A field oxide region and method of forming a field oxide region using a LOCOS process and nitride spacers formed on the sidewalls of the field oxide regions. During the LOCOS process recesses are formed in the field oxide which result in poor step coverage during successive process steps. Nitride spacers are formed on the sidewalls of the field oxide covering the recesses. The spacers provide a smooth surface over the field oxide and improved step coverage during subsequent process steps.
    Type: Grant
    Filed: August 1, 1996
    Date of Patent: April 20, 1999
    Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.
    Inventors: Chaochieh Tsai, Yuan-Chang Huang, Juing-Yi Wu, Shun-Liang Hsu