Abstract: A composite material, a preparation method thereof, and a quantum dot light-emitting diode. The composite material includes n-type metal oxide nanoparticles and an organic molecule shown in Formula I connected to the n-type metal oxide nanoparticles, and the organic molecule is bound on the surface of the n-type metal oxide nanoparticles through carboxyl groups. In Formula I, R is a hydrocarbyl group or a hydrocarbyl derivative containing at least one conjugation effect unit. The composite material has good film-forming quality and crystalline properties, and enhances the electron mobility of the composite material through conjugation efficiency, thereby having good electron transportation capability.

Abstract: A composite material, quantum dot light-emitting diode and preparation method thereof. The preparation method includes: providing ZnO nanoparticles and Au source, Au source is at least one of bulk Au or Au particles; mixing ZnO nanoparticles, Au source, S source with first organic solvent, performing hydrothermal reaction to prepare composite material. By performing hydrothermal reaction in organic solvent using ZnO nanoparticles, bulk Au and/or Au particles, and S source, S source can vulcanize surface of ZnO nanoparticles to form ZnS layer on surface of ZnO nanoparticles, Au source can be thermally dissolved and diffused into isolated distribution of atomic-level Au to realize loading on surface of ZnS layer, to obtain composite material with ZnO nanoparticles as core material, ZnS and Au as shell material. ZnS and Au in composite material can synergistically increase electron transmission efficiency of LED adopting same.

Abstract: A method for preparing a composite material, including the following steps: providing metal oxide nanoparticles and a polyaromatic compound having a structure represented by Formula I, where, Ar1, Ar2, Ar3, and Ar4 are selected from aromatic rings; X1, X2, and X3 are selected from active groups configured for binding with the metal oxide nanoparticles, each of R1, R2, and R3 independently contains at least one of alkylene, amine, —N?N—, alkenyl, alkynyl, and phenyl, and each of m, n, and y is independently selected from 0 or positive integers; dispersing the polyaromatic compound and the metal oxide nanoparticles in a solvent to yield a mixed solution; and heating the mixed solution to yield the composite material. A composite material includes: a polyaromatic compound and metal oxide nanoparticles. The polyaromatic compound is connected to the metal oxide nanoparticles. The polyaromatic compound has a structure represented by Formula I.

Abstract: A quantum dot alloy nanomaterial, a preparation method therefor, and a semiconductor device. The quantum dot alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 or type A2 is a gradient alloy component structure in which energy level width increases or decreases from inside out in the radial direction, respectively. In quantum dot alloy nanomaterial, alloy nanostructured units of type A1 and type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The quantum dot alloy nanomaterial not only achieves higher luminous efficiency, but satisfies comprehensive performance requirements of a QLED device and a corresponding display technology for quantum dot alloy nanomaterial, and is an ideal material applicable to QLED and display technology.

Abstract: A preparation method of the QD light-emitting diode includes: prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; and prepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode.

Abstract: A composite thin film includes N thin film layers stacked one over another in sequence from a first thin film layer to an N-th thin film layer. N is an integer satisfying 3?N?9. The N thin film layers are nano-ZnO thin films. A nano-ZnO particle size of the nano-ZnO thin films gradually increases or decreases from the first thin film layer to the N-th thin film layer.

Abstract: The present application discloses a composite and its preparation method and application. The composite includes silica-coated quantum dots and graphene nanosheets on the surface of the silica-coated quantum dots; wherein the silica-coated quantum dots include quantum dots and silica layer coated on the surface of the quantum dots. And the graphene nanosheets and the silica layer is bonded by (O—)3Si—R1—NHCO—R3—CONH—R2—Si(O—)3 or (O—)3Si—R4—SCH2CH2—R5—Si(O—)3, R1, R2, R4, R5 are respectively selected from a group consisting of a hydrocarbyl or a hydrocarbyl derivative, R3 is selected from a hydrocarbyl, a hydrocarbyl derivative, an aryl or an aryl derivative. The composite can further improve the stability of quantum dots without affecting the inherent optical properties of quantum dots, thereby improving luminous efficiency.

Abstract: Disclosed are quantum dot solid-state film, method for preparing same, and quantum dot light-emitting diode. Method comprises: providing quantum dot solution, preparing quantum dot material solid-state film on substrate; before being immersed in surface modifier solution to obtain quantum dot material solid-state film modified by a surface modifier; providing a metal nanoparticle seed solution, using solution method to deposit nanoparticle on quantum dot material solid-state film modified by surface modifier to obtain a quantum dot material solid-state film with the surface having adsorbed a layer of metal nanoparticle seed; before being immersed in a metal nano wire precursor solution, nanoparticle to perform a metal nano wire growth, finally obtaining a quantum dot solid-state film. The quantum dot solid-state film obtained using method of invention can effectively and rapidly transmit electrical charges, improving overall performance of device.

Abstract: An electron transport thin film is comprised of nano-zinc oxide doped with metal ions. The nano-zinc oxide doped with the metal ions is nano-zinc oxide having a surface enriched with the metal ions.

Abstract: The present disclosure discloses a quantum dot and a preparation method thereof, the method comprises a plurality of following steps: preparing a quantum dot solution; preparing an ion-containing organic ligand precursor; adding the ion-containing organic ligand precursor into the quantum dot solution, and making a surface-modification to the quantum dots, before obtaining the quantum dots having the surfaces modified; or providing a quantum dot solution; providing an ion-containing organic ligand precursor; mixing the ion-containing organic ligand precursor and the quantum dot solution, to make a ligand exchanging, before centrifuging and obtaining the quantum dots having the ligand exchanged.

Abstract: An electron transport material includes zinc oxide (ZnO) doped with metal ions. The metal ions are two or three metal ions of different valences of a same metal element. A lowest valence state of the metal ions is positive divalent.

Abstract: The present disclosure provides a quantum dot. The quantum dot includes a group III-V quantum dot core, and at least one type of halide ions, acetylacetonate ions, or hydroxyl ions bound to a surface of the group III-V quantum dot core, where the halide ions, the acetylacetonate ions and the hydroxyl ions are bound with group III cations on the surface of the group III-V quantum dot core.

Abstract: Provided is a quantum dot surface ligand exchange method. The method comprises the steps: pre-treating proton-containing ligands using a deprotonating agent to obtain deprotonated ligands; mixing a pre-prepared quantum dot solution having original ligands with the deprotonated ligands, after stirring for a predetermined amount of time at room temperature, a ligand exchange reaction occurring, and after washing, obtaining a quantum dot having the deprotonated ligands on the surface. The quantum dot ligand exchange method has a high reaction rate and is easy to operate; after the ligand exchange, the deprotonated ligands firmly bind to cations on the surface of the quantum dot, and after the ligand exchange, the quantum dot provides a stable colloidal solution, and has good solubility and high luminous efficiency.

Abstract: The present invention provides a quantum dot (QD) composite material, a preparation method, and a semiconductor device. The method includes synthesizing a first compound at a predetermined position, synthesizing a second compound on the surface of the first compound, the second compound and the first compound having a same alloy composition or having different alloy compositions, and forming the QD composite material through a cation exchange reaction between the first compound and the second compound. The light-emission peak wavelength of the QD composite material experiences one or more of a blue-shift, a red-shift, and no-shift. The method uses the QD successive ionic layer adsorption and reaction (SILAR) synthesis method to precisely control layer-by-layer QD growth and the QD one-step synthesis method to form a composition-gradient transition shell.

Abstract: The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.

Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N?1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Abstract: Disclosed in the present disclosure is a preconfigured reverse drive method applied in a video displaying process. The method comprises the steps of: pre-obtaining display content of several frames behind lit pixels in a video by means of content loading; and adding a reverse drive signal before each forward drive signal used for driving the display content of the several frames, to suppress electric charge concentration on pixel in a video display panel in advance. The reverse drive signal changes the potential barrier of the detect potential well, removes electric charges confined and concentrated in the potential well, and reduces the density of confined electric charges. Thus, the video display brightness is improved, and the service life of the video display panel is prolonged.

Abstract: A quantum dot light-emitting diode and a display apparatus comprising the quantum dot light-emitting diode are provided. The quantum dot light-emitting diode comprises an anode, a hole injecting layer, a hole transporting layer, a quantum dot light-emitting layer, an electron transporting layer and a cathode from bottom to top, wherein the materials of the quantum dot light-emitting layer contain quantum dots and CuSCN nano-particles. By blending quantum dots and CuSCN nano-particles into a membrane to prepare a quantum dot light-emitting layer, a hole trap state on the surface of the quantum dots is passivated, and the transporting effect of a hole is improved, so that the injection of holes in the quantum dot light-emitting diode and that of electrons achieve balance, and thus the light-emitting efficiency and stability are improved.

Abstract: The present application discloses a composite and its preparation method and application. The composite includes silica-coated quantum dots and graphene nanosheets on the surface of the silica-coated quantum dots; wherein the silica-coated quantum dots include quantum dots and silica layer coated on the surface of the quantum dots. And the graphene nanosheets and the silica layer is bonded by (O—)3Si—R1—NHCO—R3—CONH—R2—Si(O—)3 or (O—)3Si—R4—SCH2CH2—R5—Si(O—)3, R1, R2, R4, R5 are respectively selected from a group consisting of a hydrocarbyl or a hydrocarbyl derivative, R3 is selected from a hydrocarbyl, a hydrocarbyl derivative, an aryl or an aryl derivative. The composite can further improve the stability of quantum dots without affecting the inherent optical properties of quantum dots, thereby improving luminous efficiency.