Abstract: A drive apparatus includes an actuator, an engaging body configured to frictionally engage the actuator, and an optical-path-changing member configured so as to be magnetically linked to the engaging body, and configured to change the direction of an optical path. The actuator causes the engaging body to move in a first direction and in a second direction opposite to the first direction. The optical-path-changing member moves due to being biased by the engaging body when the engaging body has moved in the first direction, and the optical-path-changing member moves following movement of the engaging body due to magnetic attraction when the engaging body has moved in the second direction.
Abstract: A random number generator includes a random number generation unit having a first ferromagnetic layer and a nonmagnetic insulating layer laminated on one surface of the first ferromagnetic layer, a voltage application unit which is connected in the lamination direction of the first ferromagnetic layer and the insulating layer and is configured to apply a voltage in the lamination direction of the first ferromagnetic layer and the insulating layer, and a control unit which is connected to the voltage application unit and is configured to determine a time for which a voltage is applied to the first ferromagnetic layer depending on the direction of magnetization of the first ferromagnetic layer precessing by applying the voltage.
Abstract: A method of processing a rare earth magnet comprises: a step of irradiating an R-T-B-based rare earth magnet with laser light to process; and a step of performing heat treatment on the magnet after the irradiating. The heat treatment includes: a step A of bringing the temperature of the magnet to 400° C. or less, a step B of holding the magnet at a temperature T1 in a range of 400 to 700° C. after the step A, and a step C of bringing the temperature of the magnet to less than 400° C. after the step B. The temperature of the magnet is made not to exceed 700° C. between the step A and the step B. The temperature of the magnet is made not to exceed 700° C. between the step B and the step C. A step of setting the magnet at a temperature higher than 700° C. after the step C is not included.
Abstract: A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the dielectric composition. The dielectric composition contains, as a main component, a tungsten bronze type composite oxide represented by a chemical formula (Sr1.00-(s+t)BasCat)6.00-xRx(Ti1.00-aZra)x+2.00(Nb1.00-bTab)8.00-xO30.00, in which the R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, and b satisfy 0.50?s?1.00, 0?t?0.30, 0.50?s+t?1.00, 1.50<x?3.00, 0.20?a?1.00, and 0?b?1.00. At least one selected from Mn, Mg, Co, V, W, Mo, Si, Li, B, and Al is contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.
Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0?x<1) and an amount of oxygen in the tunnel barrier layer is lower than an amount of oxygen in a fully oxidized state in which the oxide has an ordered spinel structure.
February 14, 2019
August 22, 2019
TDK CORPORATION, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Abstract: A magnetic field detection device includes a first soft magnetic body, a second soft magnetic body, and a magnetism detection element. The first soft magnetic body extends to have a first length in a first direction, and has a first width, smaller than the first length, in a second direction. The second direction is substantially orthogonal to the first direction. The second soft magnetic body is disposed to be spaced apart from and face the first soft magnetic body in the first direction, extends to have a second length in the first direction, and has a second width, smaller than the second length, in the second direction. The magnetism detection element is disposed, in the first direction, between the first and second soft magnetic bodies, and extends to have a third length in the first direction and a third width, larger than the third length, in the second direction.
Abstract: A bridgeless power factor correction circuit includes: a first leg composed of a series circuit with a first rectifier and a first switch; a second leg that is composed of a series circuit with a second rectifier and a second switch and is connected in parallel to the first leg; a smoothing capacitor connected in parallel to the first leg; a snubber circuit that is connected between a first connection point, which is located between the first rectifier and the first switch and is connected via a first inductor to one end of an AC power supply, and a second connection point, which is located between the second rectifier and the second switch and is connected via a second inductor to another end of the AC power supply; and a control circuit that executes on/off control of the first switch and the second switch.
Abstract: Disclosed herein is a coil component that includes a coil conductor part, and first and second high permeability parts provided respectively on both sides of the coil conductor part in a coil axis direction. The second high permeability part has a larger thickness in the coil axis direction than the first high permeability part. A low permeability part that segments at least a part of a magnetic path exists between the first and second high permeability parts in an outer diameter area of the coil conductor part when viewed in the coil axis direction.
December 22, 2017
Date of Patent:
August 20, 2019
Toshio Tomonari, Sachiko Takano, Shigeki Sato
Abstract: Provided is a magnetoresistance effect element that that generates a high MR ratio at a lower RA than a TMR element using a material of a conventional tunnel barrier layer or MgAl2O4. The magnetoresistance effect element includes a laminate in which an underlayer, a first ferromagnetic metal layer, a tunnel harrier layer, and a second ferromagnetic metal layer are laminated in that order, wherein the underlayer is made of TiN, NbN, TaN, ZrN or mixed crystals thereof, and the tunnel barrier layer is made of a compound that has a spinel structure and expressed by composition formula (1) below: (1) AxIn2Oy, where A is the non-magnetic divalent cation and represents cations of one or more elements selected from the group consisting of magnesium and zinc, x represents a number satisfying 0<x?2, and y represents a number satisfying 0<y?4.
Abstract: An angle sensor includes detection units and an angle computation unit. The detection units detect a composite magnetic field of a magnetic field to be detected and a noise magnetic field. Each detection unit generates a first detection signal representing the strength of a component in a first direction of the composite magnetic field, and a second detection signal representing the strength of a component in a second direction of the composite magnetic field. The angle computation unit generates a detected angle value by performing computations using a plurality of pairs of first and second detection signals generated at the detection units wherein an error of the detected angle value resulting from the noise magnetic field is made smaller than in the case of generating the detected angle value on the basis of only a pair of first and second detection signals generated at any one of the detection units.
Abstract: A first, a second, and a third computing circuit respectively generate a first post-computation signal with a second harmonic component reduced as compared with first and second signals, a second post-computation signal with the second harmonic component reduced as compared with third and fourth signals, and a third post-computation signal with the second harmonic component reduced as compared with fifth and sixth signals. A fourth and a fifth computing circuit respectively generate a fourth post-computation signal with a third harmonic component reduced as compared with the first and second post-computation signals, and a fifth post-computation signal with the third harmonic component reduced as compared with the second and third post-computation signals. A sixth computing circuit determines a detected angle value based on the fourth and fifth post-computation signals.
Abstract: Disclosed herein is a differential mode filter that includes first and second terminal electrodes provided on a first flange part of a core, and first and second wires wound around a winding core part of the core in an opposite direction to each other and connected respectively to the first and second terminal electrodes. The first and second wires cross each other on the winding core part to form a plurality of crossing portions that include first, second, and third crossing portions that are first, second, and third occurrences counting from the one end of the first and second wires, respectively. A first crossing angle between the first and second wires at the first crossing portion is larger than at least one of second and third crossing angles between the first and second wires at the second and third portions, respectively.
Abstract: The present invention provides an R-T-B based sintered magnet that inhibits the demagnetization rate at high temperature even when less or no heavy rare earth elements such as Dy, Tb and the like are used. The R-T-B based sintered magnet includes R2T14B crystal grains and two-grain boundary parts between the R2T14B crystal grains. Two-grain boundary parts formed by R—Co—Cu-M-Fe phase exist, and M is at least one selected from the group consisting of Ga, Si, Sn, Ge and Bi.
August 8, 2014
Date of Patent:
August 20, 2019
Isao Kanada, Hiroyuki Ono, Eiji Kato, Masashi Miwa
Abstract: An R-T-B based sintered magnet includes R2T14B crystal grains. A grain boundary formed by the two or more adjacent R2T14B crystal grains includes an R—N—O—C concentrated part having higher concentrations of “R”, N, O, and C than those in the R2T14B crystal grains. “R” of the R—N—O—C concentrated part includes Y. A ratio of Y atom to “R” atom in the R—N—O—C concentrated part is 0.65 or more and 1.00 or less. A ratio of O atom to “R” atom in the R—N—O—C concentrated part is more than 0 and 0.20 or less. A ratio of N atom to “R” atom in the R—N—O—C concentrated part is 0.03 or more and 0.15 or less.
Abstract: The present invention provides an R-T-B based sintered magnet having an R-T-B based compound as main phase grains, wherein, the content of Zr contained in the R-T-B based sintered magnet is 0.3 mass % to 2.0 mass %, the main phase grains have Zr, and the R-T-B based sintered magnet have main phase grains with the mass concentration of Zr at the edge portion of the main phase grain being 70% or less of that at the central portion of the main phase grain at the cross-section of the main phase grain.
Abstract: A multilayer coil component includes an element body including soft magnetic metal powders and a coil disposed in the element body. The coil includes a plurality of internal conductors electrically connected to each other. The plurality of internal conductors are separated from each other in a first direction and are adjacent to each other in the first direction. An average particle diameter of the soft magnetic metal powders located at an inner side of the coil when viewing from the first direction is larger than an average particle diameter of the soft magnetic metal powders located between the internal conductors adjacent to each other in the first direction.
Abstract: An electrochemical device excellent in connection reliability is provided. An EDLC 2 includes: an element body 10 in which a pair of inner electrodes 16, 26 are laminated so as to sandwich a separator sheet 11; an exterior sheet 4 covering the element body 10; seal parts 40, 42 sealing peripheral parts of the exterior sheet 4 so that the element body 10 is immersed in an electrolyte; and lead terminals 18, 28 extending outward from the seal parts 40, 42 of the exterior sheet 4. At least one surface of the lead terminals 18, 28 is etched so as to form unevenness 180, 280.
Abstract: An active material layer containing a compound represented by a general formula (1): LiaVbAlcTidPeO12 (1), where a, b, c, d, and e in the general formula (1) are numbers satisfying 0.5?a?3.0, 1.20<b?2.00, 0.01?c<0.06, 0.01?d<0.60, and 2.80?e?3.20; and a solid electrolyte layer containing a compound represented by a general formula (2): LifVgAlhTiiPjO12 (2), where f, g, h, i, and j in general formula (2) are numbers satisfying 0.5?f?3.0, 0.01?g<1.00, 0.09<h?0.30, 1.40<i?2.00, and 2.80?j?3.20.