Abstract: The electronic component includes an element body 4 having plurality of side faces 5a to 5d along a circumference direction. The element body 4 includes insulation layers 16a to 16d covering the plurality of side faces 5a to 5d along the circumference direction in a continuous manner, and melting points of the insulation layers 16a to 16d are lower than melting points of dielectric layers 10 and 11 included in the element body 4. The main component of the insulation layer is glass.

Abstract: A magnetic sensor device includes at least one magnetic sensor and a support. A center of gravity of an element layout area of the at least one magnetic sensor is deviated from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four resistor sections constituted by a plurality of magnetoresistive elements. Magnetization of a free layer in each of two of the resistor sections includes a component in a third magnetization direction. The magnetization of a free layer in each of the other two resistor sections includes a component in a fourth magnetization direction opposite to the third magnetization direction.

Abstract: An optical device including: a substrate; an optical waveguide formed at the substrate; and a protective layer formed adjacent to the optical waveguide, wherein the optical waveguide includes multiple side surfaces that intersect the substrate, at least one side surface of the optical waveguide is provided with a rough surface. According to the optical device of the present invention, the light propagation loss can be reduced.

Abstract: An electronic component includes a stack and first to third inductors. Area of a region obtained by perpendicularly projecting a first space including a first axis and surrounded by the first inductor onto an XZ plane is larger than area of a region obtained by perpendicularly projecting a second space including a second axis and surrounded by the second inductor onto a YZ plane. The third inductor is disposed such that a third axis does not intersect the first space but intersects the second space.

Abstract: An electronic component mounting structure is an electronic component mounting structure in which an electronic component group is mounted on a substrate, and a pattern constituting a part of a current path between the inflow port and the outflow port, the electronic component group includes a plurality of electronic components connected between the inflow port and the outflow port, each of the electronic components has a current inflow terminal electrically connected to the inflow port and a current outflow terminal electrically connected to the outflow port, and one of a first spatial distance group and a second spatial distance group has equal spatial distances within the one spatial distance group, and the first spatial distance group includes spatial distances between the inflow port and the inflow terminals, and the second spatial distance group includes spatial distances between the outflow port and the outflow terminals.

Abstract: A magnetic recording array includes a plurality of spin elements, and a shared transistor connected to a first spin element and a second spin element adjacent to each other, in which each of the plurality of spin elements includes a wiring and a laminate including a first ferromagnetic layer laminated on the wiring, the shared transistor includes a first gate, a second gate, a first region, a second region, and a third region, in a plan view in a laminating direction of the laminate, the first region is sandwiched between the first gate and the second gate, the second region together with the first region sandwiches the first gate, and the third region together with the first region sandwiches the second gate, and one of the second region and the third region is connected to the first spin element, and the other is connected to the second spin element.

Abstract: A crucible for growing a single-crystal in which a raw material melt for growing the single-crystal is solidified while being accommodated includes a side wall part configured to surround the raw material melt and a bottom part configured to support the raw material melt while being continuous with the side wall part, in which the side wall part has circumferential length redundancy inside the side wall part in a cross-sectional view. The side wall part has a portion where the circumference length is redundant inside any portion in the cross-sectional view, and when the crucible for growing a single-crystal is cooled in a cooling process after the single-crystal growth, the portion where the circumference length is redundant inside in the cross-sectional view is expanded to an outside of the crucible for growing a single-crystal.

Abstract: A method of manufacturing an R-T-B based sintered magnet comprises heating a composition to give an alloy powder, cleaning the alloy powder using a cleaning solution, molding the cleaned alloy powder to give a green compact, and sintering the green compact to give a sintered body. The composition comprises a rare-earth metal element, a transition metal element, boron, and a metal halide. The metal halide comprises at least one selected from the group consisting of an alkali metal halide, an alkaline earth metal halide, and a halide of the rare-earth metal element. The heating is performed at a heating temperature that is not lower than a melting point of the metal halide. The cleaning solution comprises an aprotic solvent and is capable of dissolving the metal halide.

Abstract: An R-T-B permanent magnet that contains: main-phase grains composed of an R2T14B compound (where R is a rare earth element, T is a transition metal element, and B is boron); and grain boundaries. R includes Ce. The grain boundaries include multi-grain grain boundaries that are adjacent to three or more main-phase grains. The multi-grain grain boundaries include an R-rich phase, and lamellar or acicular R-T precipitates are present in the R-rich phase.

Abstract: This optical waveguide detection element includes a substrate, an optical waveguide layer formed on the substrate, and a photodetector. The optical waveguide layer includes a first optical waveguide in which visible light having a wavelength of 380 nm to 800 nm propagates, a second optical waveguide in which near-infrared light having a wavelength of 801 nm to 2000 nm propagates, and a third optical waveguide in which light propagates to a light receiving surface of the photodetector. A visible light output port of the first optical waveguide from which the visible light is output, a near-infrared light output port of the second optical waveguide from which the near-infrared light is output, and a reflected light input port of the third optical waveguide to which the near-infrared light is reflected and returned are arranged on one end surface of the optical waveguide layer.

Abstract: A dielectric composition including a tungsten bronze type composite oxide as a main component represented by (Ba1-xSrx)aRbZrcTadO30+0.5e in terms of an atomic ratio. In the dielectric composition, c=(2a+3b?10)?e and d=(20?2a?3b)+e are satisfied. R includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and Sc. In the dielectric composition, 0.000?x?0.500, 5.100?a?5.860, 0.000?b?0.100, and ?0.150?e?0.150 are satisfied.

Abstract: A magnetic sensor includes at least one MR element and a coil. The coil includes at least one conductor portion. The at least one conductor portion is each located at a position such that a partial magnetic field generated by the conductor portion is applied to one of the at least one MR element, the one corresponding to the conductor portion, and extends along an imaginary curve curving to protrude in a direction away from the corresponding MR element.

Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1), Ru?X1-???(1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol ? represents a number satisfying 0.5<?<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.

Abstract: The magnetic sensor of the invention has an element portion that is elongate, that exhibits magnetoresistive effect and that has a magnetically sensitive axis in a direction of a short axis thereof. The element portion is non-oval and can be arranged in an imaginary ellipse, wherein the imaginary ellipse has a major axis that connects both ends of the element portion with regard to a direction of a long axis thereof to each other and a minor axis that connects both ends of the element portion with regard to a direction of the short axis thereof to each other, as viewed in a direction that is perpendicular both to the short axis and to the long axis of the element portion.

Abstract: Provided is a thin film capacitor comprising a capacitance portion in which at least one dielectric layer is sandwiched between a pair of electrode layers included in a plurality of electrode layers, wherein the capacitance portion has an opening which extends in a lamination direction in which the plurality of electrode layers and the dielectric layer are laminated and through which one electrode layer of the plurality of electrode layers is exposed, the one electrode layer has an exposed portion exposed at a bottom surface of the opening, the exposed portion is in contact with a wiring layer connecting the one electrode layer and an electrode terminal, and a thickness of the exposed portion of the one electrode layer is smaller than a thickness of other portions of the one electrode layer and is 50% or more of the thickness of the other portions of the one electrode layer.

Abstract: Systems, methods, and devices for haptic feedback are provided. A microfluidic device includes an inlet port for supplying a fluid into the microfluidic device. A tube receives the fluid from the inlet port. The microfluidic device includes a piezoelectric actuator for realizing a displacement of a substrate to which the microfluidic device is attached, the displacement based on an electrical actuation applied to the piezoelectric actuator, and an amount of the fluid or a pressure in the tube. In some embodiments, the tube includes a carbon nanotube. In some embodiments, an amount of the fluid in the tube is controlled by an actuator (e.g., the piezoelectric actuator).

Abstract: The present disclosure provides a coil device that can be reduced in height, has a small installation area of a case, and is excellent in heat dissipation. A coil device according to the present disclosure includes: a device body including a bobbin and a coil unit of a wire wound around the bobbin; a terminal block arranging a lead portion drawn out from a wire of the coil unit thereon; and a case capable of accommodating the device body. The case includes a support arm extending outside the case, and the terminal block is held by the support arm.

Abstract: A composite particle of the present invention includes an inorganic particle and a graphene oxide particle that coats at least a part of the inorganic particle, and the graphene oxide particle is a modified graphene oxide particle having a surface modified with a hydrocarbon group optionally having a substituent.

Abstract: A magneto resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and a buffer layer. The nonmagnetic layer is between the first ferromagnetic layer and second ferromagnetic layer. The buffer layer is in contact with the first ferromagnetic layer. The first ferromagnetic layer contains a Heusler alloy containing Co. The buffer layer contains at least a first atom, a second atom, and a third atom other than Co as main components. The buffer layer does not contain Co or contains Co at a proportion less than a compositional proportion of the first atom, the second atom, and the third atom. In a case where an atomic radius of any one atom of the first atom, the second atom, and the third atom is taken as a reference, an atomic radius of another atom thereof is 95% or less or 105% or more of the reference.

Abstract: A microfluidic device and a method for flow control of cells or particles in a microfluidic channel are disclosed. The microfluidic device may include a substrate having an outlet channel. The microfluidic device may also include a microfluidic channel arranged on the substrate such that an outlet of the microfluidic channel is positioned above the outlet channel. The microfluidic device may further include a set of piezoelectric actuators arranged above the outlet channel and adjacent to the outlet, the set of piezoelectric actuators configured to eject a portion of a fluid out of the microfluidic channel via the outlet.