Abstract: A method and apparatus comprising expanded, or flexible, graphite mixed into a polymer material is disclosed. A method for using expanded graphite that has been pre-compressed prior to milling to enable a polymer material to accept an electrostatic modification to the surface or to dissipate electrostatic discharges. Other embodiments relate to methods of making polymer materials, methods of making molded polymer articles or objects, and methods of electrostatically modifying molded conductive polymer materials.

Abstract: A method of making expanded graphite. The method comprises grinding flexible graphite foil, preferably recycled material, to a small particle size, wetting the graphite foil with a water solution, thermally shocking the particles to expand them, mixing the expanded graphite with a thermoset phenolic resin, heating the mixture under pressure to form a solid sheet and then heat treating the solid sheet.

Abstract: The use of alkali metal, alkaline earth metal, ammonium and substituted ammonium salts of alkyl and alkanol sulfonic acids as additives in pure metal and metal alloy sulfate electroplating baths has a number of unexpected benefits including wider useful current density range, improved appearance and in the case of tin improved oxidative stability. The metals and alloys include but are not limited to tin, nickel, copper, chromium, cadmium, iron, rhodium, ruthenium, iron/zinc and tin/zinc.

Abstract: Flexible graphite article of manufacture made by compressing a mixture of expanded graphite particle and a fluoro-resin including ethylene-tetrafluoroethylene (ETFE) copolymers after additional heat treatment. An article of manufacture of a gasket material made shows enhanced mechanical properties especially after oil immersion and reduced leakage.

Abstract: A method of processing a wafer or other articles by horizontally transporting vertically oriented wafers into one or more process cells. A carrier is rotated from a substantially horizontal orientation to a substantially vertical orientation. A cathode assembly secures the wafer onto the carrier and electrically couples the wafer to a power supply.

Abstract: An article of manufacture including a graphite sheet having a texturized surface. The article of manufacture comprises, in one embodiment, about 90 to 99 percent vermicular graphite and about 1 to 10 percent of a filler (e.g., talc or mica). The article of manufacture may also include an insert in the form of a sheet of, for example, stainless steel, polyester film, or fiberglass fabric. Also, a method including combining an article having a surface texture with a graphite sheet, and imparting the surface texture to a surface of the graphite sheet.

Abstract: A method of processing wafers or other articles within a processing cell, entailing transporting a carrier supporting a vertically-oriented wafer horizontally through an inlet opening of a process cell, processing the vertically-oriented wafer within the process cell, and then transporting the carrier out of the process cell horizontally through an outlet opening of the process cell. In one exemplary implementation, the process performed within the cell is a pre-or post- treatment where the wafer is subjected to an acid solution treatment and/or a rinsing with de-ionized water treatment. In another exemplary implementation, the process performed within the process cell is an electroplating of the plating surface of the wafer. Additionally, a method of processing an empty carrier entailing transporting the carrier horizontally through an inlet opening of a process cell, processing the carrier within the process cell, and transporting the carrier out of the process cell horizontally through an outlet opening.

Abstract: A plating apparatus is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: An apparatus and method for inserting and removing a wafer into and from a plating apparatus, includes an elongated primary arm having a wafer seat for supporting the wafer, an elongated secondary arm for supporting the primary arm, and a mounting surface for supporting the secondary arm. The apparatus further includes a drive band mechanically coupled to the primary arm for causing the movement thereof. The drive band includes a portion wound around a drum that is driven by a motor. The motor, in rotating the drum, causes the drive band to move the primary arm along an axis between a retracted position wherein the primary arm, the secondary arm, and the mounting surface are in a stacked relationship, and an extended position wherein the secondary arm protrudes from the mounting surface along the axis, and the primary arm protrudes from the secondary arm along the axis.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A method for producing a novel yeast and mold inhibiting products (FIC) from a Lactobacillus, particularly a Lactobacillus casei having the yeast and mold producing characteristics of Lactobacillus casei var. rhamnosus NRRL-B-15972 is described. The products (FIC) are particularly useful in retarding yeast and mold growth in foods and other materials in need thereof.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformnity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.

Abstract: A plating chemical replenishment system is described having a tank for supporting a chemical solution used in a plating fluid, a container having a pre-determined volume, a first valve for selectively coupling the chemical solution from the tank to the container to form a pre-determined volume of the chemical solution within the container, and a second valve for selectively dispensing the pre-determined volume of the chemical solution from the container to a plating fluid reservoir. Also disclosed is a method of dispensing a plating solution to a plating fluid reservoir, comprising the steps of forming a pre-determined volume of the plating solution; and dispensing the pre-determined volume of the plating solution to the plating fluid reservoir.

Abstract: A plating apparatus, anode assembly, and method therefor are disclosed herein that improves the uniformity of the plating deposition across the surface of a wafer, substrate or article. This improvement is accomplished by compensating for the uneven plating deposition caused by a seed layer disposed on the article. The seed layer typically has a high resistance. As a result of the high resistance characteristic of the seed layer, plating currents that flow through substantial portion of the seed layer to the cathode contact encounter more resistance than plating currents that flow through less seed layer. This produces non-uniformity in the plating currents across the surface of the wafer, which results in an uneven plating deposition across the surface of the wafer. The plating apparatus, anode, and method therefor provide an anode having a plurality of separate anode sections designed to plate different surface regions of the wafer.