Abstract: The present invention relates to the field of biotechnology, more specifically to the field of molecular diagnostics, more specifically to a method for the detection of a polynucleotide of interest in a sample.

Abstract: Digitally controlled segmented RF power transmitter with a digital processing part (2) and an RF power amplification part (3) having a plurality of segments (122). The digital processing part (2) has a clock generation block (5) being arranged to generate n equi-phased clock signals with a 50% duty-cycle (fLO,x_50%; Cx), and a sign-bit phase mapper unit (11) being arranged to receive the n equi-phased clock signals (fLO,x_50%; Cx), and sign signals (SignI, SignQ; sign bits), and to output a set of m, m?n, phase mapped clock signals with a 50% duty-cycle (CLKy,50%; Cy) using a predetermined phase swapping scheme. Each of the plurality of segments (122) comprises logic circuitry (12) receiving the set of m phase-mapped clock signals with a 50% duty-cycle (CLKy,50%; Cy), and being arranged to provide the respective segment driving signal with a duty-cycle z of less than 50%.

Abstract: A method of applying an activation scheme to a digitally controlled segmented RF power transmitter having a plurality of adjacent segments (3), each segment (3) having an associated activation area, the segments (3) being controlled by one or more code words (CWD) The method includes controlling segments (3) by activating a specific segment (3) using an activation scheme for activating specific ones of the segments (3) depending on the code word (CWD), the activation scheme starting from center ones of the plurality of segments (3) towards outer ones of the plurality of segments (3) for increasing code word (CWD) values. This method can be applied in any digitally controlled segmented RF power transmitter, be it in polar or Cartesian implementations, and in single ended or push-pull output configurations.

Abstract: Chopper amplifiers with low intermodulation distortion (IMD) are provided. To compensate for IMD, at least one distortion compensation channel is included in parallel with chopper amplifier circuitry of a main signal channel. Additionally, output selection switches are included for selecting between the output of the main signal path and the distortional compensation channel(s) over time to maintain the output current continuous. Such IMD compensation can be realized by filling in missing current of the main signal channel using the distortion compensation channel(s), or by using channel outputs only when they have settled current.

Abstract: The invention relates to methods and systems for phase-based determination of a distance and/or a frequency offset between a first node and a second node in a wireless network.

Abstract: Method for magnetic resonance imaging, MRI, comprising obtaining an image acquisition sequence comprising RF pulses and magnetic field gradients configured to encode spatial information in a part of an object; obtaining an acoustic noise cancelling signal corresponding to the obtained image acquisition sequence at a first position; generating the image acquisition sequence; wherein the magnetic fields gradients are generated by gradient coils configured for three orthogonal directions respectively; and converting, by an acoustic transducer, simultaneously with the image acquisition sequence, the predetermined noise cancelling signal to an acoustic noise cancelling signal at the first position.

Abstract: The present invention relates to a tuneable hydrogen sensing device, to a method for producing said thin-film device, to a use of said thin-film device for detecting a chemical species, to a sensor, such as a hydrogen sensor, to a device comprising said sensor, and to an apparatus for detecting hydrogen.

Abstract: Method for testing an integrated circuit device, by defect modelling of the integrated circuit device, fault modelling of the integrated circuit device based on the information obtained from the defect modelling, test development based on information obtained from the fault modelling, and executing the test on the integrated circuit device. Defect modelling of the integrated circuit device including executing a physical defect analysis of the integrated circuit device to provide a set of effective technology parameters modified from a set of defect-free technology parameters associated with the integrated circuit device, and executing an electrical modelling of the integrated circuit device using the set of effective technology parameters to provide a defect-parametrized electrical model based on a defect-free electrical model of the integrated circuit device. The present methods allow parts-per-billion testing capabilities.

Abstract: Integrated circuit device having a processor module (2) in communication with a cache memory module (3, 4), and one or more memory control modules (6, 8, 10) each arranged to interface with an associated storage memory unit (5, 7, 9). An authentication module (15) is provided in communication with the memory control modules (6, 8, 10) and the cache memory modules (3, 4). The authentication module (15) is arranged to generate and store a hardware based secure key, read a predetermined set of data from the associated storage memory units (5, 7, 9), and an associated stored hash value, calculate a hash value of the predetermined set of data using the hardware based secure key; and store the predetermined set of data in the cache memory module (3, 4) only if the calculated hash value corresponds to the associated stored hash value.

Abstract: An assembly for characterizing a device under test (DUT) (2), comprising a dome (5) forming a test chamber. The assembly further comprises a plurality of sampling units (4), wherein during characterization of the DUT (2) the plurality of sampling units (4) are static with respect to the DUT (2) and the dome (5), and spatially distributed over the dome (5) in a far-field range of the DUT (2). The plurality of sampling units (4) are configured to receive a signal inside the test chamber, and transmit an output signal based on the received signal for further analysis. In a further aspect, a method for characterizing a DUT (2) is also provided.

Abstract: The present invention is in the field of a geometrically and spectrally resolved albedometer for a PV-module, a method of determining characteristics of reflected light, a method of optimizing reflected light performance of a solar cell, and a computer program for geometrically and spectrally resolving light.

Abstract: The invention provides a method for determining a physical vessel parameter of a vascular tissue in a vascular plant (10), wherein the method comprises: a detection stage comprising detecting acoustic emission radiation (121) from the vascular plant (10) and providing an emission-related signal; and an analysis stage comprising determining the physical vessel parameter based on the emission-related signal, wherein the physical vessel parameter comprises an elasticity or a vessel dimension, and wherein the analysis stage comprises fitting at least part of the emission-related signal to a model of flexural modes of a cylindrical beam, and determining the physical vessel parameter based on the model.

Abstract: The present invention is in the field of a switching matrix for reconfigurable PV modules and systems, in order to compensate for sub-optimal functioning cells, such as due to shading, by automatically interconnecting cells and/or blocks to optimize output power of a PV-module or modules or systems.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack having a first face and a second opposing face; an array of parallel first gate lines at the first face or the second face of the quantum well stack; and an array of parallel second gate lines at the first face or the second face of the quantum well stack, wherein the second gate lines are oriented diagonal to the first gate lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.

Abstract: The invention provides a sonotrode (100) for welding a material, the sonotrode (100) comprising a welding section (110) configured for contacting the material, wherein the welding section (110) defines a rounded shape (111) in a cross-section parallel to a longitudinal axis (A) of the sonotrode (100), wherein the rounded shape (111) approximates a circular sector (20), wherein the circular sector (20) has a central angle ?c selected from the range of 25°-300°, and wherein the circular sector (20) has a central radius rc selected from the range of 5-30 mm, and wherein the sonotrode (100) has a width W perpendicular to the longitudinal axis (A) [and to the cross-section], wherein W is selected from the range of 10-100 mm.

Abstract: An RF transmitter having one or more common-gate, CG, or common-base, CB, configured output stages, and a digitally controlled current source having a plurality of unit cells connected to the output stages, each of the plurality of unit cells comprising a current source. The digitally controlled current source is configured for driving the output stages with respective driving currents originating from the associated current source in each of the plurality of unit cells, in dependence of one or more input signals. The digitally controlled current source further comprises a current diversion path in each of the plurality of unit cells for providing a diversion current to a voltage source having a voltage lower than drain/collector terminals of transistors provided in the CG/CB configured output stages.

Abstract: A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

Abstract: An RF transmitter (1) having a gate-segmented power output stage (2) and a digital driver (5). The gate-segmented power output stage (2) includes a field-effect transistor with a plurality of gate fingers (32) and drain fingers (31) that define a gate periphery. The field-effect transistor comprises a plurality of power output stage segments (3) that each correspond to a respective part of the gate periphery, and that each have a respective power output stage segment input (4). The digital driver (5) has control outputs (6) which are connected to corresponding ones of the respective power output stage segment inputs (4), and is configured for individually switching each of the power output stage segments (3) between an on mode and a cut-off mode in dependence of one or more input signals to obtain a modulated RF carrier signal at an output (7) of the gate-segmented power output stage (2).