Abstract: An apparatus comprising a bidirectional amplifier or node supporting out-of-band signaling may be provided. The apparatus may comprise a first diplexer, a second diplexer, an upstream reverse amplifier, and a downstream Out-of-Band (OOB) amplifier. The first diplexer may comprise a first diplexer band-stop filter and a first diplexer band-pass filter. The first diplexer band-stop filter may be connected between a first diplexer first port and a first diplexer second port. The first diplexer band-pass filter may be connected between the first diplexer first port and a first diplexer third port. The second diplexer may comprise a second diplexer band-stop filter and a second diplexer band-pass filter. The second diplexer band-stop filter may be connected between a second diplexer first port and a second diplexer second port. The second diplexer band-pass filter may be connected between the second diplexer first port and a second diplexer third port.

Abstract: The disclosure relates to technology for estimating a number of samples satisfying a database query. One or more subsets from a sample dataset of a collection of all data are randomly drawn. The one or more subsets are queried to determine a number of cardinalities as training data. A prediction model based on the training data is then trained using machine learning or statistical methods, and a sample size satisfying the database query of the collection of all data is estimated using the trained prediction model.

Abstract: A radio frequency (RF) power source for use with a wireless power transmitter is provided. A direct current (DC) voltage supply of the RF power source supplies a substantially constant DC voltage to RF power source circuitry of the RF power source. A first node of the RF power source circuitry is electrically coupled to a first terminal of the DC voltage supply. The RF power source circuitry has first and second terminals that are electrically coupled to first and second terminals, respectively, of a resonant magnetic loop antenna of the wireless power transmitter circuit to provide an RF current having a constant amplitude to the resonant magnetic loop antenna.

Abstract: Compositions and methods for affecting dipteran hematophagous parasites. The compositions contain at least one dipteran semiochemical and at least one phagostimulant. The compositions may further include a pesticide. The semiochemical may be a floral attractant and the phagostimulants may be sugar-based. The compositions may be useful in attracting mosquitoes and/or repelling sand flies.

Abstract: Apparatuses for memory repair for a memory device are described. An example apparatus includes: a non-volatile storage element that stores information; a storage latch circuit coupled to the non-volatile storage element and stores latch information; and a control circuit that, in a first repair mode, receives first repair address information, provides the first repair address information to the non-volatile storage element, and further transmits the first repair address information from the non-volatile storage element to the storage latch circuit. The control circuit, in a second repair mode, receives second repair address information and provides the second repair address information to the storage latch circuit and disables storing the second address information into the non-volatile storage element.

Abstract: A blade segment (4, 8, 8a, 8b) for a refiner comprises an inner end edge (20) and an outer end edge (21) and a first side edge (22) and a second side edge (23) opposite to the first side edge (22), the first side edge (22) and the second side edge (23) extending between the inner end edge (20) and the outer end edge (21), and a refining surface (29) comprising blade bars (27) and blade grooves (28) therebetween on a front surface (25) of the blade segment (4, 8, 8a, 8b). At least one side edge (22, 23) of the blade segment (4, 8, 8a, 8b) comprises at least one opening (14a, 14b, 14c, 14d, 14e, 14f, 14g) that extends from the side edge (22, 23) toward the opposite side edge (22, 23).

Abstract: A data center includes a floor that supports rack computing systems and walls that enclose a computing room. The computing room holds the rack computing systems. One of the walls is a movable wall. The movable wall translates relative to the other walls to increase or decrease the size of the computing room.

Abstract: A decoder and a predictive decoding method performed by the decoder are described. The method includes receiving a coding block from an encoder, partitioning the coding block into N coding units (CUs) based on coding tree information, identifying whether first N?1 CUs have same prediction information, and excluding the prediction information from a merging candidate list or a probable intra prediction mode list for Nth CU when the first N?1 CUs have same prediction information. By considering the prediction information of first N?1 coding when deciding a merging candidate list or a probable intra prediction mode list for the Nth CU, this present disclosure increase the accuracy of image prediction for the last coding or prediction block.

Abstract: Apparatuses and methods for accessing a memory cell are described. An example apparatus includes a first voltage circuit coupled to a node and is configured to provide a first voltage to the node and includes a second voltage circuit coupled to a node and is configured to provide a second voltage to the node. A memory cell is coupled to first and second access lines. A decoder circuit is coupled to the node and the first access line, and is configured to selectively couple the first access line to the node. The first voltage circuit is configured to provide the first voltage to the node before the second voltage circuit provides the second voltage to the node, and the second voltage circuit stops providing the second voltage before the node reaches the second voltage.

Abstract: A method comprises forming material to be etched over a substrate. An etch mask comprising a silicon nitride-comprising region is formed elevationally over the material. The etch mask comprises an elevationally-extending mask opening in the silicon nitride-comprising region that has a minimum horizontal open dimension that is greater in an elevationally-innermost portion of the region than in an elevationally-outermost portion of the region. The elevationally-outermost portion has a greater etch rate in at least one of HF and H3PO4 than does the elevationally-innermost portion. The etch mask is used as a mask while etching an elevationally-extending mask opening into the material. The silicon nitride-comprising region is exposed to at least one of HF and H3PO4 to increase the minimum horizontal open dimension in the elevationally-outermost portion to a greater degree than increase, if any, in the minimum horizontal open dimension in the elevationally-innermost portion.

Abstract: A system for performing computing operations in a data center includes one or more sets of computer systems, one or more primary power systems, and a reserve power system. The primary power systems include at least one power distribution unit that supplies power to at least one of the sets of computer systems. The reserve power system automatically supplies power to at least one of the sets of computer systems if a condition is met (such as a failure of the primary power system).

Abstract: Apparatuses and methods for configurable command and data input circuits for semiconductor memories are described. Example apparatuses include input signal blocks, clock blocking circuits, data input blocks, driver circuits, and data receiver circuits.

Abstract: A system for delivering a tubular pipe segment from a ground level to an elevated drill rig floor. A pipe assembly system based at the ground level includes a bucking unit for connecting a first joint and a second joint to form the tubular pipe segment, a powered first conveyor for moving the first joint into the bucking unit, a first staging pipe rack, a powered second conveyor for moving the second joint into the bucking unit, and reversible for moving the tubular pipe segment out of the bucking unit, a second staging pipe rack for storing a plurality of joints, and a transfer pipe rack for storing a plurality of tubular pipe segments.

Abstract: A direct current (DC) bus voltage from a combined output of a plurality of DC power modules is controlled based on an alternating current (AC) voltage of a power grid. The DC bus voltage tracks the AC grid voltage to provide efficient conversion between the DC power sources and the AC grid, even when the amplitude of the AC grid voltage varies. In one example, a variable reference voltage is generated based on a detected AC grid voltage. The reference voltage increases and decreases in proportion to increases and decreases in the AC grid voltage. In this manner, large differences between the bus voltage and the grid voltage are avoided. By closely tracking the two voltages, efficiency in the modulation index for power conversion can be achieved.

Abstract: A protective component for a helmet includes a liner or shell that is coupleable with the helmet so that the liner or shell is positioned on an interior surface of the helmet. The liner or shell is made of a low-friction material and is coupled with the helmet so that the liner or shell is moveable relative to the helmet in response to a force being exerted on the helmet. A rear support member is removably coupled with the liner or shell and a tightening mechanism is attached to the rear support member. The tightening mechanism is configured to tension a tension member and thereby tighten the liner or shell, and the helmet, about the wearer's head.

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

Abstract: A method may include receiving a domain name system (DNS) query at a network device, where the DNS query may be associated with a traffic flow identified for rerouting through an alternative path utilizing an alternative network device instead of a default path. The method may also include rewriting the DNS query such that the DNS query is routed through the alternative network device along the alternative path and to a DNS server associated with the alternative path. The method may additionally include receiving a DNS response from the DNS server, where a resource identified in the DNS response may be based on the DNS query coming through the alternative network device.

Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.

Abstract: Some embodiments include a memory cell having a first transistor supported by a semiconductor base, and having second and third transistors above the first transistor and vertically stacked one atop the other. Some embodiments include a memory cell having first, second and third transistors. The third transistor is above the second transistor, and the second and third transistors are above the first transistor. The first transistor has first and second source/drain regions, the second transistor has third and fourth source/drain regions, and the third transistor has fifth and sixth source/drain regions. A read bitline is coupled with the sixth source/drain region. A write bitline is coupled with the first source/drain region. A write wordline includes a gate of the first transistor. A read wordline includes a gate of the third transistor. A capacitor is coupled with the second source/drain region and with a gate of the second transistor.

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.