Abstract: A method of preparing a taste-masking oral dosage form is provided. The method includes providing a first solution comprising a pharmaceutically active ingredient and a starch, providing a second solution comprising a hydrophilic polymer and a surfactant, blending the first and second solution to form a plurality of microparticles by a granulating process, wherein the microparticle is a co-crystal structure comprising the pharmaceutically active ingredient and the starch, and performing a compression-molding process to form the tablet.

Abstract: According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.

Abstract: An extract prepared from the root barks of Morus australis Poir.

Abstract: An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.

Abstract: An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.

Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.

Abstract: A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.

Abstract: A thin-film semiconductor device including a transparent insulating substrate, an island semiconductor layer formed on the transparent insulating substrate and including a source region containing a first-conductivity-type impurity and a drain region containing a first-conductivity-type impurity and spaced apart from the source region, a gate insulating film and a gate electrode which are formed on a portion of the island semiconductor layer, which is located between the source region and the drain region, a sidewall spacer having a 3-ply structure including a first oxide film, a nitride film and a second oxide film, which are respectively formed on a sidewall of the gate electrode, and an interlayer insulating film covering the island semiconductor layer and the gate electrode.

Abstract: In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.

Abstract: A method of receiving video data, a control signal, etc. via a non-contact transmission path is adopted, and a receiving circuit for receiving and amplifying a signal is formed on the same insulating substrate as a display device. Thus, there are provided a thin-film transistor which is formed in a semiconductor thin film that is formed on the insulating substrate and crystallized in a predetermined direction, and an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate. The direction of movement of carriers flowing in the thin-film transistor is parallel to the direction of crystallization of the semiconductor thin film, and the inductor and the thin-film transistor are integrated so as to be electrically coupled directly or indirectly.

Abstract: A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam.

Abstract: A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

Abstract: A light irradiation apparatus irradiates a target plane with light having a predetermined light intensity distribution. The apparatus includes a light modulation element having a light modulation pattern of a periodic structure represented by a primitive translation vector (a1, a2), an illumination system for illuminating the modulation element with the light, and an image forming optical system for forming the predetermined light intensity distribution obtained by the modulation pattern on the target plane. A shape of an exit pupil of the illumination system is similar to the Wigner-Seitz cell of a primitive reciprocal lattice vector (b1, b2) obtained from the primitive translation vector (a1, a2) by the following equations: b1=2?(a2×a3)/(a1·(a2×a3)) and b2=2?(a3×a1)/(a1·(a2×a3)) in which a3 is a vector having an arbitrary size in a normal direction of a flat surface of the modulation pattern of the modulation element, “·” is an inner product of the vector, and “×” is an outer product of the vector.

Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.

Abstract: A new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a normal phase chromatography column, and eluting the column with a first eluent having a polarity lower than that of a mixture of n-hexane and ethyl acetate in a weight ratio of 6:4 to obtain a potent fraction. Preferably, the potent fraction is substantially free of both 6-gingerol and 6-shogaol.

Abstract: A method of forming a polycrystalline semiconductor film, which includes irradiating an amorphous semiconductor film formed on an insulating substrate with light to convert the amorphous semiconductor into a polycrystalline semiconductor with laterally grown crystal grains, thus forming a polycrystalline semiconductor film, wherein crystal growth in the semiconductor is controlled such that first crystal grains laterally grow in the first direction along a X-axis from the first group of initial nuclei, the second crystal grains laterally grow in the second direction opposite to the first direction along the X-axis from the second group of initial nuclei arranged apart from the first group of initial nuclei along the X-axis, and the first crystal grains collide against the second crystal grains at different points in time along a Y-axis.

Abstract: An absorptive polymer, which is an aqueous emulsion made from copolymerization of neutral unsaturated monomers, unsaturated lipophilic monomers and unsaturated hydrophilic monomers, in the proportion of 50:26-37:14-25 in weight. A compound fiber comprising cigarette filter rod fiber as core and surface layer absorptive polymer; the cigarette filter rod fiber is polypropylene fiber or cellulose acetate fiber; lipophilic groups of the absorptive polymer are attached to polypropylene fiber of cigarette filter rod.

Abstract: A laser crystallization apparatus and a crystallization method with a high throughput are provided. Laser light having a predetermined light intensity distribution is irradiated to a semiconductor film to melt and crystallize, wherein a irradiation position is placed very quickly and with a high positional accuracy, thereby forming the semiconductor film having a large crystal grain size. A laser crystallization apparatus according to one aspect of the present invention comprises a crystallizing laser light source, a phase shifter modulating pulse laser light to have the predetermined light intensity distribution, an excimer imaging optical system, a substrate holding stage mounting a processing substrate and continuously moving in the predetermined direction, a position measuring means, and a signal generating means indicating generation of the pulse laser light based on the position measurement of the stage by the position measuring means.

Abstract: The present invention discloses a new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a reverse phase chromatography column, and eluting the column with a first eluent having a polarity lower than water to obtain a first potent fraction or a second eluent having a polarity lower than that of the first eluent to obtain a second potent fraction. Preferably, the second potent fraction is substantially free of both 6-gingerol and 6-shogaol.

Abstract: The present invention discloses new uses of 2-[piperidinyl]methyl-2,3-dihydroimidazo[1,2-c]quinazolin-5(6H)-one in providing an analgesic effect in a patient, treating passive cutaneous anaphylaxis in a patient, and in eliciting a histamine H1 receptor antagonism effect in a patient to treat a disease or disorder, such as allergy.