Abstract: A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical system which forms, on an irradiation surface, a light intensity distribution based on a light beam phase-modulated by the light modulation element. The illumination optical system illuminates the light modulation element with an illumination light beam inclined in a direction normal to a step line of the phase step.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.

Abstract: A liquid crystal display includes a pair of support substrates, a liquid crystal layer, and pixel circuits that are arrayed in a matrix and control the alignment state of liquid crystal molecules. Each pixel circuit includes two power terminals set at potentials of opposite polarities, each potential having a predetermined level difference relative to a reference potential, two pixel electrodes that retain charges supplied from the power terminals and apply a potential difference obtained by the retained charges to the liquid crystal layer as a liquid crystal drive voltage, an input transistor that includes a gate electrode, which receives a video signal, and redistributes the charges retained in the pixel electrodes in accordance with the video signal, and a switch circuit that connects the pixel electrodes to the power terminals and connects the pixel electrodes to one and the other of the source and drain electrodes of the input transistor.

Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

Abstract: There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Abstract: A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line or minimum light intensity spot to crystallize the region, and heating the crystallized region by irradiating light from a flash lamp onto the crystallized region.

Abstract: In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

Abstract: A laser crystallization apparatus has a light source, a phase shifter which modulates a laser light from the light source, an illumination system which is provided between the light source and the phase shifter, homogenizes a light intensity of the laser light from the light source and illuminates the phase shifter with the homogenized light, a stage which supports a non-single-crystal semiconductor, an image formation optical system having a plurality of optical members which is provided between the semiconductor on the stage and the phase shifter and forms an image of the modulated laser beam at a desired part on the semiconductor, and a temperature adjustment portion which adjusts a temperature of the optical member by heating or cooling the optical members of the image formation optical system.

Abstract: A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with a light beam, and an image formation optical system which causes a light beam on an irradiation target surface a light intensity distribution having an inverse-peak-shaped pattern formed based on the light beam phase-modulated by the phase modulation element to fall on an irradiation target object. Dimensions of the basic pattern are not greater than a point spread function range of the image formation optical system converted in terms of the light modulation element. The phase modulation area is configured in such a manner that a phase distribution in a light complex amplitude distribution on the irradiation target surface becomes a saw-tooth-like distribution along a line segment in a lateral direction.

Abstract: A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconductor thin film with an energy beam to enhance crystallinity of a non-single crystalline semiconductor constituting the non-single crystalline semiconductor thin film. The annealing step includes simultaneously irradiating the non-single crystalline semiconductor thin film with a plurality of energy beams to form a plurality of unit regions each including at least one irradiated region irradiated with the energy beam and at least one non-irradiated region that is not irradiated with the energy beam.

Abstract: A polygalatenoside useful as an antidepressant agent having the formula is disclosed: wherein R, R? and R? independently are H or R1, provided that R, R? and R? are not all H, wherein R1 is wherein R2 is hydrogen, C1-C6 alkyl, C1-C6 alkoxy or halogen; or a pharmaceutically acceptable salt thereof. Preferably, R2 is H.

Abstract: A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.

Abstract: An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

Abstract: Bioadhesive steroid nanoparticles are used to prepare a rapidly disintegrating solid oral dosage form of steroid. The bioadhesive steroid nanoparticles have a bioadhesive polymer surrounding the steroid nanoparticles and with an average diameter of less than 1000 nm. Hence, the solid oral dosage form, containing the bioadhesive steroid nanoparticles, a disintegrant and an effervescent agent, instantly disintegrates in the oral cavity and adheres on the periodontal pocket and oral mucosa to release steroid rapidly.

Abstract: A manufacturing method of an electronic device includes positioning a processed substrate with respect to a substrate stage of a crystallization apparatus and supporting it with at least one positioning mark previously provided on the processed substrate being used as a references, applying a modulated light beam to a predetermined area of the processed substrate supported by the substrate stage and crystallizing the area, and forming at least one circuit element in the crystallized area of the processed substrate subjected to positioning with the positioning mark being used as a reference.

Abstract: A crystallization apparatus according to the present invention includes a first irradiation system which irradiates a predetermined area on a glass substrate having an irradiation target, i.e., an a-Si thin film with light beams having a substantially homogeneous light intensity distribution, and a second irradiation system which irradiates the predetermined area with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an area in which the light intensity is minimum.

Abstract: There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Abstract: In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e.g., melting) to end of the change (e.g., solidification) can be obtained with a high time resolution of pico-seconds. Based on this, it is possible to know a progress of a change in state of the thin film (e.g., crystallization) or a transition of growth of crystal grains in units of pico-seconds.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.