Abstract: A thin film semiconductor device includes a gate electrode insulator formed through high-heat oxidization of a semiconductor film. The high-heat oxidization of semiconductor film is carried out, in the process of crystallization or recrystallization of non-single-crystalline semiconductor thin film on a base layer, by irradiating predetermined areas of the thin film which is implanted with oxygen ion before irradiation, to convert such areas to oxidized areas, and these areas are processed to gate electrode insulators of electric circuit units in the thin film semiconductor device.

Abstract: A crystallization apparatus includes a mask and an illumination system which illuminates the mask with a light beam, the light beam from the illumination system becoming a light beam having a light intensity distribution with an inverse peak pattern when transmitted through the mask, and irradiating a polycrystal semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film. The mask includes a light absorption layer having light absorption characteristics according to the light intensity distribution with the inverse peak pattern.

Abstract: The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.

Abstract: A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.

Abstract: A crystallization apparatus includes an image forming optical system which has an image side numerical aperture set to a value required to generate a light intensity distribution with an inverse peak pattern and sets an amorphous semiconductor film and a phase shift mask to an optically conjugate relationship. The phase shift mask has a boundary area which extends along a first axial line, and a first area and a second area which are arranged on both sides of the boundary area have a predetermined phase difference therebetween. The boundary area has a phase distribution which varies from a phase of the first area to a phase of the second area.

Abstract: A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.

Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

Abstract: The invention discloses a pharmaceutical composition for preventing and/or treating peptic ulcer, including American ginseng or the extract thereof, and a method for preparing American ginseng extract, said method including extracting American ginseng with water or ethanol aqueous solution, and then ultrafiltrating, dialyzing, precipitating with ethanol, or performing reverse phase chromatography to obtain various fractions of extract with anti-peptic ulcer effect.

Abstract: A method for forming a crystallized semiconductor layer includes preparing a non-single-crystal semiconductor layer in which at least one crystal seed is formed, and irradiating with an energy ray the non-single-crystal semiconductor layer having the crystal seed formed therein to allow a crystal to laterally grow from the crystal seed in the non-single-crystal semiconductor layer, irradiation of the energy ray is carried out by positioning to at least a part of the crystal seed an area having a minimum intensity value of the energy ray, the energy ray having a confirmation that an area having a maximum intensity value of the energy ray is continuously reduced to the area having the minimum intensity value in an irradiated surface.

Abstract: The invention discloses a pharmaceutical composition for preventing and/or treating peptic ulcer, including American ginseng or the extract thereof, and a method for preparing American ginseng extract, said method including extracting American ginseng with water or ethanol aqueous solution, and then ultrafiltrating, dialyzing, precipitating with ethanol, or performing reverse phase chromatography to obtain various fractions of extract with anti-peptic ulcer effect.

Abstract: An organic light emitting diode element and an EL drive transistor are arranged in each of a plurality of pixel areas defined by two adjacent scanning signal wirings and neighboring video signal wiring and current supply wiring. A current supplied to the organic light emitting diode element connected to a drain area of the drive transistor is controlled by a voltage between a gate electrode and a source electrode of the EL drive transistor, and a body electrode provided to the EL drive transistor as a fourth electrode is earthed in such a manner that excessive carriers generated in a channel area are caused to escape from the drive transistor through the body electrode.

Abstract: Enhanced transdermal composition comprising a niosome, which retains within its structure a cyclodextrin inclusion complex of a steroidal active agent and a vesicle of nonionic surfactant are provided herein, which increases the permeability of dermal tissue to transdermally administered steroidal active agents. Methods for producing the enhanced transdermal composition as well as its application are also provided.

Abstract: A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation.

Abstract: A method of treating psychosis in a patient which comprises administering a pharmaceutical composition useful in treating psychosis containing a therapeutically effective amount of 1-[piperidinyl]methyl-2,3-dihydroimidazo[1,2-c]quinazolin-5(6H)-one as an active ingredient.

Abstract: A method of treating a patient suffering a disease associated with Trichophyton mentagrophytes or Pityrosporum ovale by applying topically an anti-fungal pharmaceutical composition which is prepared from Zingiber officinale, includes the following steps: preparing a crude liquid from rhizomes of ginger by extraction with an organic solvent or supercritical CO2, or by distillation with steam; introducing the crude liquid to a reverse phase chromatography column, and eluting the column with water, a first eluent and a second eluent having a polarity weaker than that of the first eluent but stronger than that of chloroform, so that a first eluate resulting from elution of the first eluent and a second eluate resulting from elution of the second eluent are obtained; removing the first eluent and the second eluent from the first eluate and the second eluate by evaporation, respectively, so that a first concentrated eluate and a second concentrated eluate are obtained as the potent extract.

Abstract: A fast dissolving tablet. The fast dissolving tablet comprises a pharmaceutically active ingredient, a starch, a hydrophilic polymer, a surfactant, and excipients. A method of preparing the fast dissolving tablet is also disclosed.

Abstract: A taste-masking oral dosage form. The taste-masking oral dosage form comprises a pharmaceutically active ingredient, and a starch, wherein the pharmaceutically active ingredient is packaged by the starch to form a microparticle. A method of preparing the taste-masking oral dosage form is also disclosed.

Abstract: A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.

Abstract: A method for producing a thin film semiconductor device is described. In the method, a thin film layer of non-single-crystalline semiconductor, which is deposited on a base layer of glass, is processed to an island-shaped thin film layer at the time prior to the layer irradiation step. The laser irradiation to the thin film layer of non-single-crystalline semiconductor is carried out after forming an insulation film layer and a gate electrode over the island-shaped thin film layer, by using the gate electrode as the irradiation mask, whereby the center area of the island-shaped thin film layer masked by the gate electrode is crystallized, and simultaneously, the both side areas thereof which is not masked by the gate electrode are annealed. Next, a source electrode and a drain electrode is formed in the annealed areas. The implantation of impurity ion may be carried out either before or after the laser irradiation.

Abstract: A pharmaceutical composition contains a therapeutically effective amount of an active ingredient, in admixture with a pharmaceutically acceptable carrier or diluent for the active ingredient, in which the active ingredient is i) a polar solvent extract of Polygala, the polar solvent being water or a mixture of water and methanol or ethanol; ii) an aqueous fraction resulting from an extraction of the polar solvent extract with an organic solvent; iii) an organic eluate by introducing the polar solvent extract or the aqueous fraction into a reverse phase chromatography column, and eluting the column with water and an organic solvent; or iv) a filtrate having a molecular mass less than 30000 in the organic eluate.