Abstract: An electronic proximity fuse of the FM radar type having a detonating circuit with two inputs. One input is derived from a signal representing the amount by which the frequency of the received signal differs from the frequency of the transmitted signal at the instant of reception averaged over the frequency-modulation period. The second input is derived from a signal proportional to the amount of the frequency fluctuations of the frequency deviation about the averaged amount.

Abstract: An integrated semiconductor circuit arrangement composed of a substrate with an electrical portion, configured, for example, of an integrated circuit in planar CMOS or bipolar technology, an optical connecting layer disposed thereabove which includes at least one integrated (connecting) light waveguide, and an electro-optical and/or opto-electrical transducer disposed in a recess in the substrate, electrically connected to the integrated circuit and opticallly coupled to the light waveguide.

Abstract: The mean drift speed of charge carriers in a semiconductor element can be increased if this semiconductor element has narrow layers which are alternately n-doped and p-doped on their planes, with undoped semiconductor material between these layers. A structure of this type is however difficult to manufacture, since it requires both doping zones in layer thicknesses of 2 nm and undoped semiconductor material between these doped zones. The semiconductor element in accordance with the invention therefore has successive layer sequences comprising two highly-doped layers with opposing conductivity. A weakly doped intermediate layer is arranged between each pair of layer sequences. These structures in accordance with the invention can be manufactured with MBE, LPCVD and MDVPE methods. To increase the switching frequency of pin diodes this structure in accordance with the invention can be incorporated into the intrinsic zones of these diodes.

Abstract: A squaring circuit and an i.sup.2 t circuit utilizing the squaring circuit. The squaring circuit comprises a voltage-controlled oscillator and a frequency/current converter which are connected to one another, with the input voltage signal being supplied to the voltage-controlled oscillator and to the frequency/current converter on the one hand, and with the output voltage signal being tappable at an RC network connected to the output of the frequency/current converter on the other hand. The value of the output voltage is proportional to the square of the value of the input voltage. With this squaring circuit, it is possible to construct an i.sup.2 t protective circuit for protection of an electrical consumer from overload.

Abstract: In an input circuit for high-frequency amplifiers having four transistors of the same conductivity type, the emitters of the first and second transistors (T1, T2) are connected to a reference point (M). The base of the first transistor (T1) forms the input (A) of the circuit and the base of the second transistor (T2) is connected to the collector of the first transistor (T1). The collector of the first transistor (T1) is connected to the emitter of the third transistor (T3) and the collector of the second transistor (T2) to the emitter of the fourth transistor (T4). The bases of the third and fourth transistors (T3, T4) are connected to one another, and at least one of the collectors of the third or fourth transistors (T3, T4) is connected to a current supply (I3, I4).

Abstract: The invention relates to a pnp lateral transistor comprised of two regions of p-type conductivity which are incorporated into the surface of a semiconductor area of n-type conductivity and constitute the emitter and collector regions. The portion of the semiconductor area of n-type conductivity located between these two regions constitutes the active base region. The invention is based on the fact that the active base region includes below the semiconductor surface and adjacent to the emitter region and to the collector region; a buried semiconductor region containing additionally counter-doping impurities relative to the remaining surrounding base region area, which buried region produces a conductive channel for the minority charge carriers in the base region. This substantially reduces the parasitic surface recombination and substrate transistor influences, and achieves a very high direct current gain in the lateral transistor.

Abstract: A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to delimit monocrystalline silicon semiconductor regions and/or structures to prevent undesirable current flow.

Abstract: To improve the external quantum efficiency of light-emitting diodes made from semiconductive material of III/V compounds with lattice constants heavily dependent on the respective material composition of the mixed crystal, for example in GaAsP light-emitting diodes, a thin surface layer having an increased energy band gap in relation to the covered material is arranged on the surface layer of mixed crystal containing the p-zone and being from the same mixed-crystal system, through which layer the p-zone extends, with the transition in the lattice structure between the two surface layers being abrupt.

Abstract: In a band-pass amplifier having differential stage comprising two transistors fed from a joint current source, the collector of the first transistor is connected via a resistor to the base of a third transistor complementary to the first and second transistor, and the collector of the second transistor is connected via a resistor to the base of a fourth transistor complementary to the first and second transistor. The emitters of the third transistor and fourth transistor are connected to a supply voltage source, and the collectors of the third and of the fourth transistor form the output terminals of the amplifier.

Abstract: The invention relates to an optoelectronic keyboard comprising transmitting elements and receiving elements activated in multiplex operation, with the changes in the luminous flux caused by actuation of keys resulting in a signal which defines the actuated key. The invention resides in arranging the transmitting and receiving elements in a main body of the keyboard which comprises a separate cover acting as optical and electromagnetic shielding. The space serving to guide the radiation is preferably separated and shielded from the space accommodating the elements and the electronic evaluating system. Various kinds of multiplex operation can be used to operate the keyboard.

Abstract: Optoelectronic components, in particular those comprising a line of luminescent diodes arranged in a row, are provided according to the prior art with contacts that have a number of disadvantages, some of which are that the light efficiency is relatively low and that irregularities in the light efficiency of a row occur due to incorrect adjustments of the contacts. According to the invention the contact is therefore designed as a contact bridge passing transversely over the contact window, so that on the one hand only a small amount of light-emitting surface is covered and a high light power thereby attained, and on the other hand the regularity of the light efficiency is independent of any misalignment of the contact bridge.

Abstract: The invention relates to a field-effect transistor having a drain region, a source region and a gate electrode for influencing a channel area. The invention consists of arranging the source region and the gate electrode one above the other in a projection onto the channel plane such that the effective length is so small that an increase of the electron velocity in the channel is achieved.

Abstract: A varactor diode comprising a semiconductor element, with a pn-junction barrier layer or rectifying metal semiconductor junction on one outer face, an ohmic substrate contact on the opposite outer face and a glass casing in which the diode is hermetically sealed.

Abstract: A space solar cell comprising a doped semiconductor basic element and metallic contacts on the front and rear, and a cover glass with contacts. To draw off the electrostatic charge generated on the surface of the cover glass of the solar cell, either a part of a connector contact homogeneously integrated with the contacts and projecting from the semiconductor element extends in a shapeable manner onto the cover glass of the solar cell, or a connector contact homogeneously integrated with the contact of the cover glass and projecting from the cover glass is connected to an electric contact of the solar cell.

Abstract: In an opto-electronic transimpedance amplifier for the amplification of optical signals supplied by a photovoltaic cell and having a transistor as amplifier, the load resistor of the amplifier transistor is a transistor and two ohmic resistors whose series connection is parallel to the emitter-to-collector path of the load resistor transistor and whose connection point is connected to the base of the load resistance transistor.

Abstract: A structured semiconductor body based on a Si substrate and having monocrystalline semiconductor regions and barrier regions which contain polycrystalline silicon which have preferably been produced in an Si-MBE process. The barrier regions are provided to delimit the monocrystalline Si semiconductor structures to prevent undesired current flow, for example between twso monocrystalline devices of an integrated circuit. The polycrystalline silicon of the barrier regions has a substantially lower electrical conductivity than the monocrystalline regions, and consequently it is possible to spatially selectively dope portions the barrier region so as to provide regions which electrically contact a monocrystalline silicon region. In a preferred embodiment a polycrystalline silicon region within the barrier region is doped so that it forms a pn-junction with the adjacent monocrystalline semiconductor region and can be used, for example, as an emitter zone of a bipolar device.

Abstract: A television tuner for three frequency ranges (I, II, III) comprises a common antenna connection (4) for corresponding input filter circuits. The input filter circuits (1, 2, 3) of the two higher frequency ranges can be connected to and disconnected from the antenna connection by means of switches (11, 12). The switches (11, 12) are each located between the antenna connection (4) and the associated input filter circuit (2, 3). To improve matching of the input filter circuit (3) and to simplify the configuration of the circuit, the antenna connection (4) is arranged in the proximity of an input filter circuit (1, 2) of the two lower-frequency frequency ranges (I, II). In addition, the switch (12) for the highest frequency range (III) is connected to the end of a coupling conductor (5) which is spaced closest to the antenna connection (4).

Abstract: A synchyronous receiver with direct mixing comprising a phase detector and an amplitude demodulator is provided with a square-law envelope detector and means for making the envelope signal audible or visible for tuning purposes.

Abstract: To actuate a complementary push-pull class B final stage complementary driver transistors are provided whose emitters are electrically interconnected and connected to the collectors of the two final stage transistors via a filter section. This filter section is not integratable into the rest of the circuit on account of the high capacitance value of the capacitor. To permit design of this complementary push-pull class B final stage as an integrated circuit the filter section is replaced according to the invention by a circuit arranged between the emitters of the driver transistors and ground and having dynamic low impedance and being designed such that the operating voltage drops by about half across the integratable circuit.

Abstract: In a semiconductor component, in particular, a high-voltage transistor, with an oxygen doped or nitrogen doped silicon layer on the surface, a glass layer is provided between the doped silicon layer and the semi-conductor surface.