Abstract: The modulator comprises a first and second integration stages, and a comparator, the first integration stage is fully differential having: an amplifier, sets of input sampling capacitors and feedback capacitors, and the first integration stage is configured to sample the analog input voltage on a set of input capacitors during a first portion of a clock cycle and on a set of input capacitors during a second portion of the clock cycle and to sample the feedback reference voltage on a set of feedback capacitors during the first portion of the clock cycle and on a set of feedback capacitors during the second portion of the clock cycle, and the first set of feedback capacitors and the second set of feedback capacitors are randomly selected out of the plurality of sets of feedback capacitors from cycle to cycle.

Abstract: The invention relates to a low leakage switch having an input node for receiving an input voltage and an output node for providing an output voltage. The low leakage switch comprises a main sampling transistor the backgate voltage of which is biased through other transistors, and wherein the control gate of the main sampling transistor is controlled through a second control signal and the control gates of the other transistors are controlled through a first control signal, wherein the electronic device is further configured to activate the other transistor for adjusting the backgate voltage of the main sampling transistor through the first control signal before activating the main sampling transistor for sampling the input voltage on a main sampling capacitor through the second control signal.

Abstract: An electronic device comprising an amplifier having at least a first input transistor of a first doping type. A first transistor is coupled with a channel as a feedback path between an output of the amplifier and a control gate of the first input transistor forming an input of the amplifier. A diode-coupled second transistor is coupled with a channel between a first current source and the output of the amplifier wherein a control gate of the first transistor is coupled between the first current source and the diode-coupled second transistor and the first transistor is of a second doping type which is opposite to the first doping type of the first input transistor of the amplifier.

Abstract: An integrated battery charger protection circuit incorporates a charge control power FET for series connection in the battery load current path from a DC supply input terminal to a controlled DC output terminal. The circuit has a gate drive input terminal connected to the gate of the charge control power FET and further includes protective circuitry adapted to disable the DC output terminal in a fault condition detected within the integrated circuit. The controlled DC output terminal and the gate drive input terminal are connectable to the external charge control host circuit the same way as corresponding terminals of a discrete power FET, in particular of p-channel type.

Abstract: The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.

Abstract: An integrated circuit (IC) configured to operate as a slave on an inter-integrated circuit (I2C) or I2C compatible bus. The IC is further configured to receive an address through the I2C bus and store the received address in a register, so as to be identified by the address. A method of address assignment in a master/slave system, the system comprises at least one master, a plurality of slaves, and an I2C or I2C compatible bus. The method comprises sending a first address by the master on the I2C bus to a first of the plurality of slaves and storing the first address on the first slave to identify the first slave by the first address. The method further comprises sending a second address by the master on the I2C bus to a second of the plurality of slaves and storing the second address on the second slave to identify the second slave by the second address. The steps of sending and storing are repeated until all slaves of the system have stored an address.

Abstract: An electronic device and a method for operating an electronic device, wherein the electronic device comprises a reset stage which is configured to have a power down threshold and a power cycle threshold. The voltage level of the power cycle threshold is lower than the voltage level of the power down threshold. The two threshold levels define a first and second interval for a supply voltage of the electronic device. A first interval is between the power cycle threshold and the power down threshold. A second interval is above the power down threshold. The reset stage is further configured to provide the control signal having a defined first state in the first interval and a defined second state in the second interval. The electronic device is set to a low power reset mode if the control signal is in the first state and the electronic device is enabled to enter an active mode if the control signal is in the second state.

Abstract: A buffer is provided. The buffer includes a buffering stage that receives an enable signal and an input signal and that provides an output signal and a bandgap stage that is coupled to the buffering stage and that is activated and deactivated by the enable signal. In particular, the buffering stage includes a buffering substage that includes a buffering transistor that is coupled to the input stage, wherein the buffering transistor is formed on a substrate, and wherein the buffering transistor has a channel with a doping concentration that is approximately the same as the substrate.

Abstract: Single inductor-multiple output (SIMO) DC-DC converter, having an output node which is coupled to one side of the single inductor to receive a load current. A plurality of output switches which are coupled to the output node for switching the load current from the output node to a plurality of output lines is provided. Each output line has a load capacitor. Further, each output line may comprise a charge pump which is coupled to the output switch and the load capacitor of the output line.

Abstract: Apparatus for inspecting a semiconductor wafer (8) has a plurality of light sensors (2) arranged relative to a light source (1) and wafer inspection platform (4), so that images of different angle views of a surface of the wafer can be received and compared with corresponding images taken of a reference wafer to automatically detect defects based on image comparison. The light sensors (2) may receive superposed images of light (7) reflected directly from the light source (1) off the wafer surface and light (6) indirectly reflected off the wafer surface after first reflecting off a dome (3) with a diffusely reflecting inner surface (5) positioned over the platform (4).

Abstract: An electronic device for DC-DC conversion of an input voltage into an output voltage is provided. The electronic device includes a current mode control loop for controlling a sensed current of the DC-DC conversion by comparing a voltage level indicating a magnitude of the sensed current with a reference voltage level indicating the maximum admissible magnitude of the sensed current. The reference voltage level is dynamically adjusted in response to a change of an input voltage level.

Abstract: An electronic device with a protective circuit against damage by electrostatic discharge includes a discharge current path connectable between an input to be protected and a ground pin. An enabling circuit outputs a control signal for connecting the discharge current path in the event of an electrostatic discharge. A deactivating circuit which deactivates the enabling circuit during operation of the electronic device is controlled by the inverted control signal. A method of protecting an electronic device against damage by electrostatic discharge includes providing a control signal for connecting a discharge current path between an input to be protected and a ground pin in the event of an electrostatic discharge. An inverted control signal is applied to the inverted control signal to a deactivating circuit. The inverted control signal prevents connection of the discharge current path between the input to be protected and ground during operation of the electronic device.

Abstract: An electronic device includes a circuit for measuring a current in an inductor, wherein the current in the inductor is controlled by alternately switching a first power transistor and a second power transistor each having a first electrode, a second electrode and a control gate. The measuring circuit includes a first sense transistor having a first electrode, a second electrode and a control gate, the first sense transistor having the control gate coupled to the control gate of the first power transistor. A second electrode is coupled to the second electrode of the first power transistor. A second sense transistor has a first electrode, a second electrode and a control gate, the second sense transistor having the control gate coupled to the control gate of the second power transistor and having the second electrode coupled to the second electrode of the second power transistor.

Abstract: The invention relates to an EtherCAT fieldbus system, a master and a slave for the system and a method. The slave is configured to be coupled to the EtherCAT fieldbus. A first configurable memory of the slave stores a first activation list indicating for consecutive bytes of data of an EtherCAT datagram a corresponding fieldbus memory management information or synchronization management information.

Abstract: An electronic device is provided for switched DC-DC conversion of an input voltage level into an output voltage level. The electronic device is configured to control a control gate of a power switch and to prevent a charge of a capacitance of the control gate released during a switching operation from flowing to ground.

Abstract: A semiconductor device includes a buried layer and a deep contact for providing a low resistive connection to the buried layer. The deep contact is formed by doped polycrystalline silicon. A method of manufacturing a semiconductor device and a deep contact for providing a low resistive connection to the buried layer, with the steps of forming a buried layer, providing an active region adjacent the buried layer and forming a deep contact for providing a low resistive connection to the buried layer by patterning a contact shape for the deep contact on an upper surface of the active region, removing part of the active region underneath the contact shape to create a deep contact cavity. Subsequently a polycrystalline silicon layer for filling the deep contact cavity is deposited and doped.

Abstract: The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.

Abstract: A method for fabricating a semiconductor device having a first and second bipolar devices of the same dopant type includes: depositing a dielectric layer over a semiconductor layer, depositing a gate conductor layer over the dielectric layer, defining base regions of both bipolar devices, removing the gate conductor layer and dielectric layer in the base regions, depositing a base layer on the gate conductor layer and on the exposed semiconductor layer in the base regions, depositing an insulating layer over the base layer, forming a photoresist layer and defining emitter regions of both bipolar devices, removing the photoresist layer in the emitter regions thereby forming two emitter windows, masking the emitter window of the first bipolar device and exposing the base layer in the base region of the second bipolar device to an additional emitter implant through the associated emitter window.

Abstract: A system is provided which includes a signal generator for generating a periodic excitation signal and an analog to digital converter, wherein the system is configured to apply the periodic excitation signal to a network including a known first impedance and a second impedance and to take a first set of M digital samples of a first signal relating to the first impedance and a second set of M digital samples of a second signal relating to the second impedance with a sampling frequency that is an integer multiple of the frequency of the periodic signal. The system is further configured to determine the impedance value of the second impedance by calculating a relative phase difference between the first signal and the second signal using the first set of digital samples and the second set of digital samples.

Abstract: An electronic device comprising a level shifter and a method. The level shifter includes an input adapted to receive an input signal switching between a low input voltage level and a high input voltage level and a first switch and a second switch coupled in series between a low output voltage supply and a high output voltage supply. An output is coupled to an interconnection node between the first and the second switch and is adapted to be coupled to a load. The first and second switches are controlled by the input signal. The level shifter further includes a third switch which is coupled between the interconnection node and an auxiliary voltage supply which has a voltage level between the low output voltage level and the high output voltage level.