Patents Assigned to THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
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Patent number: 11971451Abstract: A method includes: constructing an on-wafer calibration piece model set that includes one or more on-wafer calibration piece models, where each of the one or more on-wafer calibration piece models has a corresponding on-wafer calibration piece; selecting an on-wafer calibration piece model from the on-wafer calibration piece model set; measuring the on-wafer calibration piece utilizing an on-wafer S parameter measurement system that is calibrated using a multi-thread TRL calibration method in a Terahertz frequency band, to obtain an S parameter of the on-wafer calibration piece; and calculating a plurality of different parameters that represent crosstalk of calibration pieces in the on-wafer calibration piece model, according to an admittance calculated according to the S parameter and an admittance formula corresponding to the on-wafer calibration piece model.Type: GrantFiled: December 14, 2021Date of Patent: April 30, 2024Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Aihua Wu, Yibang Wang, Faguo Liang, Chen Liu, Ye Huo, Peng Luan, Jing Sun, Yanli Li
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Patent number: 11881769Abstract: A multi-level converter control method is provided that includes: acquiring an inductive current of an LC filter in a driving pulse period; determining a to-be-adjusted first switch tube and a first duty ratio adjustment amount of the to-be-adjusted first switch tube based on a slope of a rising period of the inductive current, and adjusting a duty ratio of the to-be-adjusted first switch tube based on the first duty ratio adjustment amount; and determining a to-be-adjusted second switch tube and a second duty ratio adjustment amount of the to-be-adjusted second switch tube based on a slope of a falling period of the inductive current, and adjusting a duty ratio of the to-be-adjusted second switch tube based on the second duty ratio adjustment amount.Type: GrantFiled: November 15, 2021Date of Patent: January 23, 2024Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Zhanbiao Gu, Zhiliang Zhang, Shipeng Cheng, Xiaoyong Ren, Senfeng Xu, Chao Tan
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Patent number: 11843158Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.Type: GrantFiled: May 12, 2023Date of Patent: December 12, 2023Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Zhanbiao Gu, Hongmin Gao, Zhiliang Zhang, Xiaoyong Ren, Qianhong Chen, Shujie Wang, Chao Tan, Senfeng Xu
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Patent number: 11817848Abstract: The disclosure provides a resonator and a filter. The resonator includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure successively includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top. A cavity is formed between the substrate and the multilayer structure, and the cavity includes a lower half cavity below an upper surface of the substrate and an upper half cavity beyond the upper surface of the substrate and protruding toward the multilayer structure. A resonator with novel structure and good performance is formed by providing the cavity with the lower half cavity below the upper surface of the substrate and the upper half cavity above the upper surface of the substrate.Type: GrantFiled: December 27, 2018Date of Patent: November 14, 2023Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Liang Li, Xin Lv, Dongsheng Liang
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Patent number: 11791232Abstract: A packaging structure includes: a substrate provided with a through-cavity penetrating up and down, and a metal heat sink on a front surface of the substrate; a bonding chip mounting area and a first passive element mounting area on the front surface, and a flip chip mounting area, a second passive element mounting area and a pin lead mounting area are provided on a back surface of the substrate; a first sealing ring located at the periphery of the bonding chip mounting area and the first passive element mounting area; a first cover plate packaged on the first sealing ring; a second sealing ring located at the periphery of the flip chip mounting area and the second passive element mounting area with the pin lead mounting area being located at the periphery of the second sealing ring; and a second cover plate packaged on the second sealing ring.Type: GrantFiled: March 1, 2021Date of Patent: October 17, 2023Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Bo Peng, Ling Gao, Xiaojun Zhang, Yang Liu, Qiang Duan, Dapeng Bi, Congge Lu
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Patent number: 11781240Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.Type: GrantFiled: September 10, 2020Date of Patent: October 10, 2023Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Niefeng Sun, Shujie Wang, Yanlei Shi, Huimin Shao, Lijie Fu, Xiaolan Li, Yang Wang, Senfeng Xu, Huisheng Liu, Tongnian Sun
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Patent number: 11757048Abstract: A gallium oxide Schottky barrier diode with negative beveled angle terminal and a production method thereof are provided. The production method includes four steps. In the first step, a photoresist layer with a preset pattern is formed on a gallium oxide epitaxial layer, where the gallium oxide epitaxial layer is formed on an upper surface of a gallium oxide substrate. In the second step, first electrode layer is formed on the gallium oxide epitaxial layer. In the third step, the gallium oxide substrate is rotated and the gallium oxide epitaxial layer is etched. In the fourth step, a second electrode layer is formed on the lower surface of the gallium oxide substrate.Type: GrantFiled: April 26, 2023Date of Patent: September 12, 2023Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Yuangang Wang, Yuanjie Lv, Shaobo Dun, Tingting Han, Hongyu Liu, Zhihong Feng
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Patent number: 11733298Abstract: The present application provides two-port on-wafer calibration piece circuit models and a method for determining parameters. The method includes: measuring a single-port on-wafer calibration piece circuit model corresponding to a first frequency band to obtain a first S parameter; calculating, according to the first S parameter, an intrinsic capacitance value of a two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model; measuring the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band to obtain a second S parameter; and calculating a parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model according to the second S parameter and the intrinsic capacitance value.Type: GrantFiled: December 14, 2021Date of Patent: August 22, 2023Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Yibang Wang, Aihua Wu, Faguo Liang, Chen Liu, Ye Huo, Peng Luan, Jing Sun, Yanli Li
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Publication number: 20230049408Abstract: A semiconductor phosphide injection synthesis system and a control method are provided, which belong to the technical field of preparation of semiconductor phosphides. The semiconductor phosphide injection synthesis system includes a furnace body, a shielding carrier box arranged above the furnace body by virtue of a lifting mechanism, a phosphorus source carrier arranged in the shielding carrier box, an injection pipe arranged below the phosphorus source carrier, and a crucible arranged at an inner bottom of the furnace body in a matched manner.Type: ApplicationFiled: July 5, 2021Publication date: February 16, 2023Applicant: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Niefeng SUN, Shujie WANG, Huisheng LIU, Tongnian SUN
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Patent number: 11456387Abstract: The disclosure provides a normally-off gallium oxide field-effect transistor structure and a preparation method therefor, and relates to the technical field of semiconductor device. The normally-off gallium oxide field-effect transistor structure comprises a substrate layer and an n-type doped gallium oxide channel layer from bottom to top. The n-type doped gallium oxide channel layer is provided with a source, a drain, and a gate. The gate is located between the source and the drain. A no-electron channel region is provided in the n-type doped gallium oxide channel layer located below the gate.Type: GrantFiled: October 1, 2020Date of Patent: September 27, 2022Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Yuanjie Lv, Yuangang Wang, Xingye Zhou, Xin Tan, Xubo Song, Shixiong Liang, Zhihong Feng
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Patent number: 11417779Abstract: The disclosure is applicable for the technical field of semiconductor devices manufacturing, and provides a gallium oxide SBD terminal structure. The gallium oxide SBD terminal structure comprises a cathode metal layer, an N+ high-concentration substrate layer, an N? low-concentration Ga2O3 epitaxial layer and an anode metal layer from bottom to top, wherein the N? low-concentration Ga2O3 epitaxial layer is within a range of certain thickness close to the anode metal layer; and a doping concentration below the anode metal layer is greater than a doping concentration on two sides of the anode metal layer. Namely, only a doping concentration of the part outside the corresponding area of the anode metal layer is changed, so that the breakdown voltage of the gallium oxide SBD terminal structure is improved under the condition of guaranteeing low on resistance.Type: GrantFiled: October 13, 2020Date of Patent: August 16, 2022Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Yuanjie Lv, Yuangang Wang, Xingye Zhou, Xin Tan, Xubo Song, Xuefeng Zou, Shixiong Liang, Zhihong Feng
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Patent number: 11385175Abstract: A calibration method includes: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; based on the eight error models, determining a first mathematical model according to a first S parameter related to a first calibration piece, the first mathematical model comprising parallel crosstalk terms between probes, and determining a second mathematical model according to a second S parameter related to a second calibration piece, the second mathematical model comprising series crosstalk terms between the probes; determining a third mathematical model according to a third S parameter related to a measured piece; and solving and obtaining a Z parameter of the measured piece based on the first mathematical model, the second mathematical model and the third mathematical model, and acquiring an S parameter of the measured piece according to the Z parameter of the measured piece.Type: GrantFiled: December 16, 2020Date of Patent: July 12, 2022Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Yibang Wang, Aihua Wu, Faguo Liang, Chen Liu, Peng Luan, Ye Huo, Jing Sun, Yanli Li
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Patent number: 11349043Abstract: The disclosure is related to the technical field of semiconductors, and provides a method for manufacturing a tilted mesa and a method for manufacturing a detector. The method for manufacturing a tilted mesa comprises: coating a photoresist layer on a mesa region of a chip; heating the chip on which the photoresist layer is coated from a first preset temperature to a second preset temperature; performing etching processing on the heated chip, so as to manufacture a mesa having a preset tilting angle; and removing the photoresist layer on the mesa region of the chip after the mesa is manufactured.Type: GrantFiled: September 24, 2020Date of Patent: May 31, 2022Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Xingye Zhou, Zhihong Feng, Yuanjie Lv, Xin Tan, Xubo Song, Jia Li, Yulong Fang, Yuangang Wang
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Patent number: 11342474Abstract: A method for preparing an avalanche photodiode includes preparing a mesa on a wafer, growing a sacrificial layer on an upper surface of the wafer and a side surface of the mesa, removing the sacrificial layer in an ohmic contact electrode region of the wafer, preparing an ohmic contact electrode in the ohmic contact electrode region of the wafer, removing the sacrificial layer in a non-mesa region of the wafer, growing a passivation layer on the upper surface of the wafer and the side surface of the mesa, removing the passivation layer on the upper surface of the mesa of the wafer and the passivation layer in the non-mesa region of the wafer corresponding to the ohmic contact electrode region, and removing the sacrificial layer on the upper surface of the mesa of the wafer.Type: GrantFiled: September 24, 2020Date of Patent: May 24, 2022Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Xingye Zhou, Zhihong Feng, Yuanjie Lv, Xin Tan, Yuangang Wang, Xubo Song, Jia Li, Yulong Fang
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Patent number: 11275103Abstract: The disclosure provides a calibration method, a system and a device of an on-wafer S parameter of a vector network analyzer. The method comprises the steps of: acquiring a first parameter of a first crosstalk calibration piece measured by the vector network analyzer; obtaining a main crosstalk error term based on the first parameter of the first crosstalk calibration piece and a calibration parameter of the first crosstalk calibration piece; acquiring a second parameter of a second crosstalk calibration piece measured by the vector network analyzer based on the main crosstalk error term; and obtaining a secondary crosstalk error term based on the second parameter of the second crosstalk calibration piece and a calibration parameter of the second crosstalk calibration piece, wherein the main crosstalk error term and the secondary crosstalk error term are used for calibrating the vector network analyzer.Type: GrantFiled: September 19, 2020Date of Patent: March 15, 2022Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Yibang Wang, Aihua Wu, Faguo Liang, Chen Liu, Xuefeng Zou, Zhifu Hu, Jian Cao, Ye Huo
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Patent number: 11242615Abstract: The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process.Type: GrantFiled: April 18, 2019Date of Patent: February 8, 2022Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Niefeng Sun, Shujie Wang, Tongnian Sun, Huisheng Liu, Huimin Shao, Yanlei Shi
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Patent number: 11244821Abstract: The present disclosure discloses a method for preparing an isolation area of a gallium oxide device, the method comprising: depositing a mask layer on a gallium oxide material; removing a preset portion region of the mask layer; preparing an isolation area in a position, corresponding to the preset portion region, on the gallium oxide material by using a high-temperature oxidation technique, with the isolation area being located between active areas of the gallium oxide device; and removing the remaining mask layer on the gallium oxide material. In the disclosure, the isolation area is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area, thereby achieving isolation between the active areas of the gallium oxide device.Type: GrantFiled: September 29, 2020Date of Patent: February 8, 2022Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Yuanjie Lv, Yuangang Wang, Xingye Zhou, Xin Tan, Xubo Song, Shixiong Liang, Zhihong Feng
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Patent number: 11127849Abstract: The present disclosure discloses an enhancement-mode field effect transistor. This enhancement-mode field effect transistor includes a substrate, a channel layer formed on an upper surface of the substrate, a source electrode and a drain electrode respectively formed on both sides of the channel layer, and a gate electrode formed on an upper surface of the channel layer, a region outside the corresponding region of the gate electrode in the channel layer is provided with a carrier-free region. Carriers are absent in the carrier-free region, and carriers are present in the remaining portion of the channel layer. The carrier-free region is not disposed below the gate electrode, but is disposed outside the corresponding region of the gate electrode in the channel layer, and the threshold voltage of the device can be regulated by regulating the width and number of the carrier-free region.Type: GrantFiled: December 27, 2017Date of Patent: September 21, 2021Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Yuanjie Lv, Yuangang Wang, Xubo Song, Xin Tan, Xingye Zhou, Zhihong Feng
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Patent number: 10985258Abstract: Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors.Type: GrantFiled: November 6, 2017Date of Patent: April 20, 2021Assignee: The 13th Research Institute of China Electronics Technology Group CorporationInventors: Zhihong Feng, Jingjing Wang, Cui Yu, Chuangjie Zhou, Jianchao Guo, Zezhao He, Qingbin Liu, Xuedong Gao
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Patent number: 10868497Abstract: An unbalanced terahertz frequency doubler circuit with power handling capacity is provided, and the circuit includes a RF input waveguide, a quartz substrate and a RF output waveguide, where one end of the quartz substrate is disposed in a waveguide groove of the RF input waveguide and the other end of the quartz substrate is disposed in a waveguide groove of the RF output waveguide, where an input transition microstrip is disposed on the quartz substrate, and one end of the transition microstrip is connected to an output transition microstrip sequentially through a first transmission microstrip, a low pass filter, a RF matching microstrip and a second transmission microstrip, where anodes of four GaAs-based terahertz frequency multiplier diode groups are connected to the RF matching microstrip, and a cathode at the outermost position of each of the GaAs-based terahertz frequency multiplier diode groups is connected to a grounding quartz strip.Type: GrantFiled: August 28, 2017Date of Patent: December 15, 2020Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONInventors: Junlong Wang, Zhihong Feng, Dabao Yang, Shixiong Liang, Lisen Zhang, Xiangyang Zhao, Dong Xing, Peng Xu