Abstract: A boost-type switching regulator includes an inductor; a rectifying element; a capacitor; a switching element; an output terminal; a detection voltage generating unit; an output voltage controlling unit; and a detection voltage level shifting unit. The detection voltage generating unit generates a detection voltage according to an output voltage. The output voltage controlling unit turns on and off the switching element to increase the output voltage when the detection voltage is smaller than a specific value, and to turn off the switching element to decrease the output voltage when the detection voltage is greater than the specific value. The detection voltage level shifting unit shifts the detection voltage so that the detection voltage during a voltage increasing period becomes greater than the detection voltage during a voltage decreasing period.

Abstract: Provided is a method of manufacturing a nanowire, including: forming a plurality of grid patterns on a grid base layer; forming a sacrificial layer on the grid base layer on which the grid patterns are formed; producing a nanowire grid structure by forming a nanowire base layer on the sacrificial layer; forming a nanowire by wet etching the nanowire base layer; and separating the grid patterns from the nanowire by etching the sacrificial layer.

Abstract: A control circuit of digital control power supply circuit includes: first filter generating detection voltage having voltage level based on time average of output voltage of the digital control power supply circuit; A/D converter sampling feedback voltage having voltage level based on the output voltage at peak or bottom of the output voltage and converting the sampled feedback voltage into digital feedback data, and converting the detection voltage into digital detection data; error detector generating error data indicating difference between the feedback data and target data indicating target value of the feedback voltage; compensator generating duty command value adjusted to make the error data approximate zero; digital pulse modulator receiving the duty command value and generating pulse signal having duty ratio corresponding to the duty command value; and correction unit correcting the target data based on difference between the detection data and the feedback data.

Abstract: In an aspect, a positive active material composition for a rechargeable lithium battery including a positive active material coated with a vanadium pentaoxide (V2O5) and an aqueous binder, a positive electrode including the same, and a rechargeable lithium battery including the positive electrode is disclosed.

Abstract: An analytical cell includes a first holder and a second holder. The first holder and the second holder each contain a substrate including a through-hole and a transmission membrane having an electron beam permeability. The through-hole is covered with the transmission membrane. The first holder and the second holder are stacked to form an overlapping portion such that the transmission membranes face toward each other. A negative electrode active material and a positive electrode active material, which are arranged at a distance from each other and are in contact, respectively, with an electrolytic solution, are connected electrically to a negative electrode collector and a positive electrode collector, respectively, in the overlapping portion. A lyophobic part having no affinity for the electrolytic solution is formed on at least one of the negative electrode collector and the positive electrode collector.

Abstract: A charging apparatus may include a power supply unit supplying charging power, a charging unit transferring the charging power from the power supply unit to an external charging target device, a charge controlling unit controlling a charging state of the charging unit, a display unit displaying the charging state according to controlling by the charge controlling unit and stopping a displaying operation when the charging target device is in a fully-charged state, and a delaying unit blocking a current supplied to the display unit and delaying the stopping of the displaying operation of the display unit for a preset time when the charging target device is recharged in the fully-charged state.

Abstract: An audio signal outputting apparatus and method for adjusting an output gain of an audio signal are provided. The audio signal outputting apparatus includes: a pulse width modulation (PWM) unit which generates a carrier signal, compares a signal level of the carrier signal with a signal level of an audio signal, and generates a PWM signal based on a result of the comparison; a controller which, based to a level of the audio signal, controls the PWM unit to change a signal shape of the carrier signal to adjust a duration of a logic high level of the PWM signal; and a switching power unit which amplifies the PWM signal generated by the PWM unit and outputs the amplified PWM signal.

Abstract: A non-directional smoke control damper includes a central blade (11), a plurality of outer blades (12) and a blade advancing/retreating device; an outer edge of the central blade (11) overlaps with an opening edge of the plurality of outer blades (12); a support shaft (110) is disposed to pass through the overlapping portion of the edges; a rear end of the support shaft (110) is coupled through a shaft coupling plate (230); and if the central blade (11) advances forwards, the plurality of outer blades (12) advance forwards in order so that a gap is formed at each edge between the central blade (11) and an adjacent outer blade and between a prior-order outer blade and a posterior outer blade to form a blowing passage, thereby allowing an air current to flow into the vestibule through the blowing passage.

Abstract: The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the array substrate, and a display device. The thin film transistor includes a substrate and a gate, an insulation layer, an active layer, a source and a drain which are provided on the substrate. A spacer layer is also provided between the gate and the active layer, and the spacer layer overlaps at least with one of the gate and the active layer having a smaller area in an orthographic projection direction. The spacer layer can effectively prevent material forming the gate from being diffused into the active layer, thereby ensuring stability of performance of the thin film transistor. In the array substrate utilizing the thin film transistor, the spacer layer further extends to a region corresponding to a gate line.

Abstract: The present invention relates to a heterogeneous data cluster generation apparatus and method and a data clustering method and apparatus, and more particularly, to a data clustering method and apparatus which cluster data measured by different sensors into a number of groups. Aspects of the present invention provide an apparatus and method for generating clusters by putting together heterogeneous data which are values measured by different types of sensors. Aspects of the present invention also provide an apparatus and method for generating clusters by setting indices in order to effectively cluster multi-dimensional data, massive data, or scattered data.

Abstract: A golf ball 2 has, on a surface thereof, a rugged pattern composed of a land 10 and a large number of dimples 8. A process for designing the rugged pattern includes the steps of: (1) arranging a large number of generating points on a surface of a phantom sphere; (2) assuming a large number of Voronoi regions on the surface of the phantom sphere by a Voronoi tessellation based on the large number of generating points; (3) calculating centers of gravity of the Voronoi regions and setting the centers of gravity as new generating points; (4) assuming a large number of new Voronoi regions on the surface of the phantom sphere by a Voronoi tessellation based on a large number of the new generating points; and (5) assigning dimples and a land to the surface of the phantom sphere based on contours of the new Voronoi regions.

Abstract: A method of protecting data of a flash memory is provided. The method includes detecting primary power applied to the flash memory, and applying secondary power converted from the primary power to the flash memory. The primary power is compared to first and second values, and a writing-protection pin of the flash memory is enabled when the detected primary power reaches a predetermined value.

Abstract: A wide bandgap semiconductor device includes a first conductive type high-concentration wide bandgap semiconductor substrate, a first conductive type low-concentration wide bandgap semiconductor deposited film which is formed on the semiconductor substrate, a metal film which is formed on the semiconductor deposited film so that a Schottoky interface region is formed between the metal film and the semiconductor deposited film, and a second conductive type region which is formed in a region of the semiconductor deposited film corresponding to a peripheral portion of the metal film, wherein the Schottoky interface region in the semiconductor deposited film is surrounded by the second conductive type region so that periodic island regions are formed in the Schottoky interface region.

Abstract: Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity.

Abstract: A clutch including a drive shaft, drive side rotation body, driven shaft, driven side rotation body, clutch housing, and lock member is disclosed. During non-rotation of the drive side rotation body, when the driven side rotation body is rotated, the lock member is pushed by the driven side rotation body and moved outward in a radial direction thereby bringing the contact portion into contact with the inner circumferential surface of the clutch housing. During rotation of the drive side rotation body, the drive side rotation body pushes a drive side cam surface in the rotation direction, and the drive side cam surface acts to move the lock member inward in the radial direction and push the lock member against the driven side rotation body. Thus, the lock member is sandwiched between the drive side rotation body and the driven side rotation body thereby coupling the drive side rotation body and the driven side rotation body with the lock member to be integrally rotatable.

Abstract: A heat exchange-condensation panel assembly includes a plurality of moisture air flow passages (113), a plurality of cooling water flow passages (123) and a plurality of condensing air flow passages (133), wherein the moisture air flow passage (113) is arranged adjacently to the condensing air flow passage (133) so that the moisture air passing through the moisture air flow passage is condensed by the condensing air passing through the condensing air flow passage, and the cooling water flow passage (123) is arranged adjacently to the condensing air flow passage (133) so that the cooling water passing through the cooling water flow passage is cooled by the condensing air passing through the condensing air flow passage.

Abstract: Provided is a semiconductor package including multiple semiconductor chips, and separate groups of leads connected to the semiconductor chips. The leads are exposed to the outside of the semiconductor package. The plurality of leads may include a first lead group for a first chip group and a second lead group for a second chip group. The first and second chip groups are part of the package.

Abstract: A high voltage (HV) device and method for manufacturing the same are provided, at least comprising a substrate, an insulation formed on the substrate, a deep well formed in the insulation, an air layer formed in the insulation and disposed adjacent to the bottom surface of the deep well. A bottom surface of the deep well is spaced apart from the substrate. Also, the air layer, interposed between the deep well and the substrate, is spaced apart from the substrate. In one embodiment, an air layer further communicates with an atmosphere outside the HV device, which facilitates heat dissipation.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first stacked structure. The first stacked structure includes a first stacked portion disposed along a first direction, at least one second stacked portion connected with the first stacked portion and disposed along a second direction perpendicular to the first direction, and at least one third stacked portion connected with the first direction and arranged alternately with the second stacked portion along the first direction. The width of the third stacked portion is smaller than the width of the second stacked portion along the second direction.