Abstract: An easily openable container lid includes a shell and liner. The shell includes a flat circular top wall, a skirt wall having an arcuate part extending arcuately radially outward and downward from the peripheral edge of the top wall in a longitudinal cross sectional view and a linear part extending vertically downward following the arcuate part, and a grip piece extending from the lower end of the skirt wall. The top wall, the skirt wall and at least a base part of the grip piece are integrally formed of a metal sheet, and a pair of scores each composed of first and second portions are formed on the shell. The first portions extend on the skirt wall upward from both sides of the grip piece, and the second portions extend arcuately between the upper end part of the skirt part and the peripheral edge part of the top wall.

Abstract: A system-on-chip is provided. The system-on-chip includes a system bus, a plurality of IP units connected to the system bus, a processor unit including a plurality of cores configured to control the plurality of IP units via the system bus, a monitoring unit configured to monitor a state of the processor unit, and an error detection unit configured to operate as a master device for the plurality of IP units and monitor a register in which error information indicating whether an error has occurred in each of the plurality of IP units is stored.

Abstract: A method for extracting a characteristic signal from a power frequency signal includes steps of: S1, detecting a voltage half-wave zero-crossing area in a single voltage cycle in the power frequency signal by a signal; superimposing a voltage modulation signal on the voltage half-wave zero-crossing area, and superimposing an instantaneous pulse on a current cycle in the power frequency signal corresponding to the voltage half-wave zero-crossing area; generating the characteristic signal with current cycles and voltage cycles; S2, demodulating whether there is the voltage modulation signal in the power frequency signal, if so, executing step S3; and S3, demodulating the characteristic signal to obtain the current modulation signal and the voltage modulation signal respectively; and determining whether data corresponding to the current modulation signal and date corresponding to the voltage modulation signal are predetermined data, wherein if so, the characteristic signal exists.

Abstract: The present application discloses a manufacturing method of a display panel and a display panel. The manufacturing method includes the steps: forming a color filter layer on a substrate; confirming a colorfilter-to-be-stripped in the color filter layer; and stripping the colorfilter-to-be-stripped by using a selected stripping liquid; the color filter layer includes a first color filter, a second color filter and a third color filter; and the colorfilter-to-be-stripped includes one or two of the first color filter, the second color filter and the third color filter, and the method of stripping the colorfilter-to-be-stripped by the selected stripping liquid includes: letting the colorfilter-to-be-stripped react with the selected stripping liquid, and stripping the colorfilter-to-be-stripped by the selected stripping liquid, and forming a protective layer on the surface of the color filters except the colorfilter-to-be-stripped.

Abstract: A storage controller includes a prefetch buffer configured to buffer data prefetched from a non-volatile memory during a prefetch operation, a determiner circuit configured to output one of the prefetched data and normal data read from the non-volatile memory, as read data, and a prefetch control circuit configured to enable the prefetch operation during a first time when a sequential read operation is performed on the non-volatile memory, disable the prefetch operation at a second point after the first time, and enable the prefetch operation or maintain the disable of the prefetch operation according to performance of the read data in a prefetch suspend period after the second time in which the prefetch operation is disabled.

Abstract: A semiconductor structure includes a semiconductor substrate, a transistor, a plurality of isolation structures, and a conductive feature. The transistor is over the semiconductor substrate. The isolation structures are over the semiconductor substrate. The isolation structures define a semiconductor ring of the semiconductor substrate surrounding the transistor. The conductive feature extends vertically in the semiconductor substrate and surrounds the transistor and semiconductor ring. The conductive feature has a rounded corner facing the semiconductor ring from a top view.

Abstract: A dynamic frequency allocation method for base stations, a shelf label system and a computer device are provided. The method includes: obtaining a current connectivity structure of base stations; obtaining a current weight degree of each base station based on a frequency interval weight between base stations in the current connectivity structure; performing priority classification on all current base stations to obtain a current priority type of each base station; and obtaining a current allocated frequency of each base station based on the current priority type of the base station, the current weight degree of the base station, the frequency interval weight and a current available frequency set.

Abstract: Provided are a fluorinated compound for patterning a metal or an electrode (cathode), an organic electronic element using the same, and an electronic device thereof, wherein a fine pattern of the electrode is formed by using the fluorinated compound as a material for patterning a metal or an electrode (cathode), without using a shadow mask, and it is possible to more easily apply UDC since it is easy to manufacture a transparent display having high light transmittance.

Abstract: Provided are a counting assembly and a developing box. The counting assembly comprises a counting member for attaching to and detaching from an external counted member; the counting member comprises a rotating member and a toggling member, the rotating member receives driving force from outside to rotate and the toggling member is driven to rotate; the counting assembly further comprises a holding member in contact with the rotating and toggling members. During counting, the rotating member applies a discontinuous acting force to the toggling member through the holding member; when applied with the acting force, the toggling member is kept by the holding member at a static position where the counted member is continuously pressed; when not applied with the acting force, the toggling member rotates under the action of the counter force of the counted member along a direction opposite to the rotating direction of the rotating member.

Abstract: A first correspondence table in a terminal device stores a first correspondence between an identifier of a process running on the terminal device and an identifier of a data stream created by the process. A second correspondence table stores a second correspondence between an identifier of an application and an identifier of a process created by the application. The terminal device receives an identifier of a first data stream from a network security device, finds, in the first correspondence table, a first record where the identifier of the first data stream is stored to obtain an identifier of a process in the first record, finds, in the second correspondence table, a second record where the identifier of the process in the first record is stored to obtain an identifier of an application from the second record, and sends the identifier of the application to the network security device.

Abstract: A semiconductor device includes a gate stack, an epitaxy structure, a first spacer, a second spacer, and a dielectric residue. The gate stack is over a substrate. The epitaxy structure is formed raised above the substrate. The first spacer is on a sidewall of the gate stack. The first spacer and the epitaxy structure define a void therebetween. The second spacer seals the void between the first spacer and the epitaxy structure. The dielectric residue is in the void and has an upper portion and a lower portion under the upper portion. The upper portion of the dielectric residue has a silicon-to-nitrogen atomic ratio higher than a silicon-to-nitrogen atomic ratio of the lower portion of the dielectric residue.

Abstract: According to certain embodiments, an electronic device comprises: a wireless communication module configured to support ultra-wide band (UWB) communication; and at least one processor operatively connected with the wireless communication module, wherein the at least one processor is configured to: set the wireless communication module to a wake-up state; when a given number of first ranging response messages (RRMs) are received from second external electronic devices after receiving a first ranging initiation message (RIM) from a first external electronic device in a RIM slot of a first ranging round, set the wireless communication module to a sleep state after receiving a first ranging final message (RFM) from the first external electronic device in a RFM slot of the first ranging round until a RIM slot of a second ranging round is reached after the first ranging round; set the wireless communication module to the wake-up state in the RIM slot in the second ranging round; and set the wireless communication m

Abstract: Provided are a video special effect configuration file generation method and apparatus, and a video rendering method and apparatus. The video special effect configuration file generation method includes: obtaining a reference image; receiving a screen splitting processing operation of a user on the reference image; performing screen splitting processing on the reference image based on the screen splitting processing operation to obtain a plurality of sub-screens; and associating, in response to a special effect setting operation of the user on a target sub-screen among the plurality of sub-screens, at least one first special effect corresponding to the special effect setting operation with the target sub-screen, to generate a video special effect configuration file. The user can customize the screen splitting processing manner and the rendering special effect of the sub-screen, the video special effect configuration file generation method is more flexible and is more convenient for use.

Abstract: A communication method and a system for converging a fifth generation (5G) communication system for supporting higher data rates beyond a fourth generation (4G) system with an internet of things (IoT) technology are provided, which may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method and an apparatus for transmitting a reference signal are provided. The method includes receiving, from a base station, a first parameter and a second parameter associated with a sound reference signal (SRS) by higher layer signaling, identifying a bandwidth for the SRS based on the first parameter and the second parameter, and transmitting, to the base station, the SRS based on the identified bandwidth for the SRS.

Abstract: A port mode adaptation method includes a network device determining a status of a port on the network device. The method includes the network device setting a mode of the port to an Ethernet interface mode if the status of the port satisfies a first condition. In this way, when the network device identifies the mode of the port on the network device as the FlexE interface mode, and there is no link at the FlexE shim of the port, the network device may determine that a mode used by a port interconnected with the port is not a FlexE interface mode. In this case, the network device may adaptively set the mode of the port to the Ethernet interface mode, to ensure that the port on the network device can use a same mode as another port interconnected with the port.

Abstract: A variable resistance memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction and crossing the first conductive lines in a plan view, and cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view. Each of the cell structures includes a switching pattern, a variable resistance pattern, and a first electrode provided between the switching pattern and the first conductive line, the first electrode including carbon. Each of the first conductive lines includes an upper pattern including a metal nitride in an upper portion thereof. The upper pattern is in contact with a bottom surface of the first electrode.