Abstract: The disclosure describes one unit cell of a PNPN photoswitch array for an image sensor, including a PNPN light-activated thyristor (LAT), in the form of a two-terminal device, and a load FET. The FET functions as a load and as an on-off switch in series. The output of is a voltage at a first n node that controls the FET switch that connect a voltage-ramp input line to a capacitor and a diode that are connected in parallel. The other side of the diode is the input source of the unit cell that feeds charge into a vertical CCD analog shift register. At the start of a cycle of operation, such as the beginning of a sweep of a radiation beam and prior to a pulse of a target reflection pulse, being directed onto the pnpn photoswitch, the voltage level at the first node is high. At the time when a pulse of radiation is directed onto the photoswitch the first node goes low turning the switching transistor off.

Abstract: A thermal or infrared imaging system having an optical barrel, an external stop formed by a mirror, a dewar, a cold shield, a focal plane array, and multiple retroreflectors. The cold shield and focal plane array are located inside the dewar. The mirror directs desired light bundles at the focal plane array. The retroreflectors are attached to the inside of the optical barrel. The retroreflectors are arranged such that the retroreflectors exist in all lines of sight of the focal plane array, except those lines of sight associated with the external stop. Consequently, the retroreflectors do not interfere with the desired light bundles which are focused onto the focal plane array. However, all light outside of that which is focused is prevented from reaching the focal plane array by the retroreflectors. The retroreflectors are infrared retroreflectors arranged in a matrix. Each of the retroreflectors is a "concave" corner cube having low emissivity reflecting facets.

Abstract: The present invention is an integrated imaging device capable of providing preprocessed images. An image processing unit receives command and control signals to perform selected image or signal processing operations before outputting the image. The imaging array uses either a full or linear array of photodetectors to capture an image of pixel charges. A plurality of pixel storage registers store the pixel charges and allow internal signal processing before transferring the image via an output register to an outside receiving device. A transfer register allows for transferring the pixel charges to a frame storage register. A dump drain permits is included for dumping unwanted data before transfer to the frame storage register. The array uses Si detectors or platinum silicide (PtSi) Schottky barrier detectors (or both) and is capable of both infrared and visual imaging.

Abstract: The present invention is a method and apparatus for transferring data from an imaging device. An image array is used to capture an image arranged in columns and rows of charges held in pixels in the image array. These charges are then transferred through a group of vertical registers to a storage register. Once in the storage register rows which have not been selected for transfer are dumped to a dump drain. Rows that have been selected for transfer continue through the vertical registers until they reach a pair of transfer registers from which the rows are output.

Abstract: A self-aligned element antiblooming structure for application to charge-coupled devices includes a region in the substrate in which the charge-coupled device is fabricated into which both a P and an N conductivity type impurity are introduced. By introducing impurities of different diffusivities, a sink region is created between two very narrow antiblooming barriers. Using appropriate process controls, the potential height of the antiblooming barriers may be adjusted to drain excess charge accmulating in the substrate adjacent the antiblooming barriers. In this manner the antiblooming function is accomplished using only a minimal area of the substrate. The invention is applicable to charge-coupled devices utilizing a variety of different clocking schemes, and to charge-coupled device image sensors using buried channels.

Abstract: A method of controlling the dynamic range of a CCD or similar device. The method is used in connection with a charge-coupled device or like structure of known construction having a photogate region in which charge is generated at a rate proportional to the intensity of incident electromagnetic radiation. The photogate accumulates charge during a predetermined exposure period. A sink region is disposed to receive excess charge from the photogate region, and the passage of charge from the photogate region to the sink region is controlled by a control gate of the type commonly used for integration control. A second gated region is present for receiving charge from the photogate region for transporting charge therefrom.

Abstract: An improved gain compression device is disclosed, especially for use in charge-coupled devices. The device is preferably constructed on a semiconductor substrate and includes a first potential well in close proximity to a mobile charge packet generation region. A second potential well is separated from the generation region by a diffusion region. The first potential well becomes saturated and drains to a drain region while the second potential well continues to fill.

Abstract: A gain compression method and apparatus which is especially suitable for charge coupled devices is disclosed. A mobile charge packet generation area is provided with an adjacent overflow barrier. The overflow barrier is adjacent an N+ diffusion region which provides parasitic capacitance to the overflow barrier. The diffusion region adjusts the potential of the overflow barrier as greater amounts of charge overflow the barrier.

Abstract: A multi-function imaging and tracking device is disclosed. A first Schottky diode array lying in a first plane performs a tracking and acquisition function. A second Schottky diode array lying in a second plane performs an imaging function. The first array is a low resolution, high-speed array while the second array is a high resolution, low-speed array. The second array having an operational parameter to be adjusted by the first array.

Abstract: A method of controlling the dynamic range of a CCD or similar device. The method is used in connection with a charge-coupled device or like structure of known construction having a photogate region in which charge is generated at a rate proportional to the intensity of incident electromagnetic radiation. The photogate accumulates charge during a predetermined exposure period. A sink region is disposed to receive excess charge from the photogate region, and the passage of charge from the photogate region to the sink region is controlled by a control gate of the type commonly used for integration control. A second gated region is present for receiving charge from the photogate region for transporting charge therefrom.