Patents Assigned to The Government of the United States of America as represented by the Secretary of the Navy
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Patent number: 11817240Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.Type: GrantFiled: March 22, 2021Date of Patent: November 14, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventor: Berend T Jonker
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Patent number: 11816867Abstract: Systems and methods are provided for color-enhancing satellite data in a manner that is specific to the true color ocean signal, i.e., the light that is emanating from the ocean surface. These color enhanced images, in turn, can be used as a scientific research and monitoring tool for studying the coastal ocean.Type: GrantFiled: February 16, 2021Date of Patent: November 14, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventor: Jason K. Jolliff
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Patent number: 11817318Abstract: A method for activating implanted dopants and repairing damage to dopant-implanted GaN to form n-type or p-type GaN. A GaN substrate is implanted with n- or p-type ions and is subjected to a high-temperature anneal to activate the implanted dopants and to produce planar n- or p-type doped areas within the GaN having an activated dopant concentration of about 1018-1022 cm?3. An initial annealing at a temperature at which the GaN is stable at a predetermined process temperature for a predetermined time can be conducted before the high-temperature anneal. A thermally stable cap can be applied to the GaN substrate to suppress nitrogen evolution from the GaN surface during the high-temperature annealing step. The high-temperature annealing can be conducted under N2 pressure to increase the stability of the GaN. The annealing can be conducted using laser annealing or rapid thermal annealing (RTA).Type: GrantFiled: March 1, 2023Date of Patent: November 14, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Travis J. Anderson, James C. Gallagher, Marko J. Tadjer, Alan G. Jacobs, Boris N. Feigelson
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Patent number: 11806678Abstract: An article having a nanoporous membrane and a nanoporous graphene sheet layered on the nanoporous membrane. A method of: depositing a layer of a diblock copolymer onto a graphene sheet, and etching a minor phase of the diblock copolymer and a portion of the graphene in contact with the minor phase to form a nanoporous article having a nanoporous graphene sheet and a nanoporous layer of a polymer. A method of: depositing a hexaiodo-substituted macrocycle onto a substrate having a Ag(111) surface; coupling the macrocycle to form a nanoporous graphene sheet; layering the graphene sheet and substrate onto a nanoporous membrane with the graphene sheet in contact with the nanoporous membrane; and etching away the substrate.Type: GrantFiled: March 4, 2021Date of Patent: November 7, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Manoj K. Kolel-Veetil, Paul E. Sheehan
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Patent number: 11808492Abstract: A cooling system employs at least one composite elastocaloric device. Each composite device has a first member with a first material and a second member with an elastocaloric material. The first material increases in size in response to an applied electric or magnetic field and returns to its prior size upon removal of the applied electric or magnetic field. The first and second members are mechanically coupled together such that the increase in size of the first material applies a stress to the elastocaloric material and the return of the first material to its prior size releases said stress, thereby causing the elastocaloric material to absorb heat.Type: GrantFiled: September 25, 2019Date of Patent: November 7, 2023Assignees: University of Maryland, College Park, The Government of the United States of America, as represented by the Secretary of the NavyInventors: Huilong Hou, Ichiro Takeuchi, Margo Staruch, Peter Finkel
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Patent number: 11807580Abstract: The present invention provides a method for making a high strength, small grain size ceramic having a transgranular fracture mode by rapid densification of a green body and subsequent cooling of the densified ceramic. The ceramic may include dislocations, defects, dopants, and/or secondary phases that are formed as a result of the process and resulting in stress fields capable of redirecting or arresting cracks within the material. This ceramic can maintain transparency from ultraviolet to mid-wave infrared.Type: GrantFiled: April 8, 2022Date of Patent: November 7, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Michael Hunt, Guillermo R. Villalobos, Benjamin Rock, Shyam S. Bayya, Woohong Kim, Ishwar D. Aggarwal, Bryan Sadowski, Jasbinder S. Sanghera
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Publication number: 20230352571Abstract: Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AIN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InxAl1-xN), InxGa1-xN, AlxGa1-xN, InxAlyGa1-x-yN, where (0<x?1, 0<y?1, 0<x+y?1).Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Marko J. Tadjer, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, JR.
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Publication number: 20230352541Abstract: Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AlN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InxAl1-xN), InxGa1-xN, AlxGa1-xN, InxAlyGa1-x-yN, where (0<x?1, 0<y?1, 0<x+y?1).Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Karl D. Hobart, Marko J. Tadjer, Michael A. Mastro, Mark Goorsky, Asif Khan, Samuel Graham, Jr.
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Publication number: 20230352600Abstract: Ga2O3-based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier diode (MOSSBD) rectifier that includes an n-type ?-Ga2O3 drift layer on a ?-Ga2O3 substrate, the drift layer having a plurality of spaced-apart semi-insulating regions formed by in-situ ion implantation of acceptor species at predefined spatially defined regions of the drift layer to create alternating areas of n-type and semi-insulating regions within the n-type drift layer. The thus-formed structure achieves high forward bias current with low specific on-resistance when the anode is biased with positive voltage and low leakage current when the device is operated under reverse bias.Type: ApplicationFiled: April 28, 2023Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Marko J. Tadjer, Hannah N. Masten, Joseph A. Spencer, Alan G. Jacobs, Karl D. Hobart, Yuhao Zhang
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Publication number: 20230348055Abstract: A method of designing a morphable aerodynamic surface includes discretizing and parameterizing a model of a morphable surface to create a function to optimize; utilizing finite element analysis to solve for displacements and associated errors at an initialization point; and iteratively calculating a gradient cost function, define step size and search direction, step according to defined step size and search direction, and recalculate displacements and associated errors to converge on final thickness vector.Type: ApplicationFiled: April 11, 2023Publication date: November 2, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventor: Brandon Powell
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Patent number: 11804907Abstract: A finite rate of innovation (FRI) communications system includes a reference signal generator, an FRI modulator configured to apply an FRI kernel and encode information onto the reference signal, and a transmitter configured to transmit the encoded signal. The FRI kernel is one of a sinc function kernel or a Gaussian kernel. A receiver unit is configured to receive an encoded signal, convert the encoded signal into a digital signal, and demodulate and recover information from finite rate of innovation parameters in the digital signal.Type: GrantFiled: July 14, 2021Date of Patent: October 31, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventor: Joshua Beun
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Patent number: 11802323Abstract: An aluminum magnesium alloy with reduced Samson phase at grain boundaries made from the method of providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture. A method of suppressing the Samson phase, Al3Mg2, at grain boundaries in Aluminum, comprising providing aluminum in a container, adding boron to the container, providing an inert atmosphere, arc-melting the aluminum and the boron, and mixing the aluminum and the boron in the container to form an alloy mixture.Type: GrantFiled: May 4, 2021Date of Patent: October 31, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Ramasis Goswami, Syed B. Qadri
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Patent number: 11803120Abstract: A method of graphene-enabled block copolymer lithography transfer to an arbitrary substrate comprising the steps of applying graphene on a surface, adding block copolymers to the graphene on the surface, phase-separating the block copolymers, forming nanopatterned phase separated block copolymers, delaminating the graphene, and transferring the graphene and nanopatterned phase separated block copolymers to a second surface. A layer of nanopatterned phase separated block copolymers on an arbitrary surface comprising a first arbitrary substrate absent of chemical preparation, a layer of graphene on the first arbitrary substrate, and a layer of phase-separated block copolymers on the layer of graphene, wherein the layer of phase-separated block copolymers on the layer of graphene was formed on a second substrate and delaminated via water liftoff and wherein the nanopatterned phase separated block copolymers are utilized as a shadow mask for lithography on the first arbitrary substrate.Type: GrantFiled: December 8, 2020Date of Patent: October 31, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Keith E. Whitener, Woo K. Lee
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Patent number: 11796419Abstract: Brillouin fiber sensors can provide distributed measurements of parameters of interest over long distances in a fiber by measuring the Brillouin frequency shift as a function of position along the fiber. The Brillouin frequency shift may be determined, to within a small fraction of the Brillouin linewidth, by establishing a series of lasing modes that experience Brillouin amplification at discrete spatial locations in a test fiber. A linewidth narrowing and high intensity associated with the lasing transition enable precise measurements of the lasing frequency associated with each of the lasing modes. The Brillouin frequency may be determined based on the lasing frequency.Type: GrantFiled: August 11, 2021Date of Patent: October 24, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Brandon F. Redding, Joseph B. Murray
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Patent number: 11795483Abstract: A nanoplatelet serves as a substrate for immobilizing enzymes involved in consecutive reactions as a cascade. This results in a significant increase in the rate of catalysis as well as final product yield compared to non-immobilized enzymes or enzymes immobilized to quantum dots.Type: GrantFiled: June 11, 2019Date of Patent: October 24, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Igor L. Medintz, Joyce Breger, Scott Walper, Michael H. Stewart
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Patent number: 11800645Abstract: An apparatus for interfacing with an RF/microwave subsystem is provided. The apparatus includes a printed circuit board that includes: a controller, and a connector constructed to provide control signals and power signals to a subsystem in accordance with instructions from the controller, and a mechanical interface constructed to provide a mechanical connection between the subsystem and the printed circuit board.Type: GrantFiled: August 2, 2022Date of Patent: October 24, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Thomas Petelik, Steven Bode, Matthew Anderson
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Publication number: 20230332044Abstract: Methods of fabricating nanocrystals are disclosed. Such methods may include providing copper sulfide core nanocrystals and providing a lead precursor. Moreover, the copper sulfide core nanocrystals may be reacted with the lead precursor to generate copper doped lead sulfide nanocrystals. Related nanocrystals and optoelectronic devices are also disclosed.Type: ApplicationFiled: May 4, 2023Publication date: October 19, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Patrick Y. Yee, Sarah F. Brittman, Paul D. Cunningham, Janice E. Boercker, Katherine D. Burgess, Rhonda M. Stroud, Steven C. Erwin
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Patent number: 11791510Abstract: A method of cooling a battery cell includes: atomizing a cooling fluid by driving it through a micro-nozzle at a pressure sufficient to create a jet of aerosolized liquid droplets while retaining sufficient momentum in flow of the fluid to travel from the nozzle to an outer surface of the battery cell; impinging the spray of the jet of aerosolized liquid droplets on an outer surface of the battery cell; partially evaporating the liquid droplets on the outer surface to conduct heat from the outer surface; and convecting heat from the outer surface of the battery via the cooling fluid.Type: GrantFiled: April 16, 2020Date of Patent: October 17, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Brandon Powell, Michael R Dixon, Jr., Jesse Maxwell, Rachel Carter
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Patent number: 11786601Abstract: A pegylated, circularly permuted construct of the CapD enzyme (a gamma glutamyl transferase enzyme acting as a hydrolase specific to poly-?-D-glutamic acid) is used to treat anthrax and other bacterial infections, including but not limited to infection with strains that are resistant to available antibiotics.Type: GrantFiled: January 18, 2022Date of Patent: October 17, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Patricia M. Legler, Arthur M. Friedlander, Jaimee R. Compton
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Patent number: 11789004Abstract: A sensitive and selective, in-line method to measure and validate the sulfur content at ppb levels in both the liquid and gas phase of an analyte. The method includes patterning graphene, for example to form a mesa structure comprising horizontal or vertical lines or an array of multidentate star features; functionalizing the patterned graphene and attaching nanoparticles to the functionalized graphene to form a device; exposing the device to an analyte in the gas or liquid phase; detecting a change in electrical response when sulfur is present in the analyte; and recovering the device for future use. Also disclosed is the related sulfur detector.Type: GrantFiled: April 12, 2021Date of Patent: October 17, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Evgeniya H. Lock, F. Keith Perkins, Anthony K. Boyd, Rachael L. Myers-Ward, David Kurt Gaskill, Anindya Nath