Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.

Abstract: Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.

Abstract: An exemplary embodiment provides a current sensor comprising a printed circuit board (PCB), a Rogowski coil, and a controller. The PCB can comprise an aperture configured to receive a conductor carrying an alternating electrical current. The Rogowski coil can be positioned on the PCB along a perimeter of the aperture. The controller can be in electrical communication with the Rogowski coil and configured to generate an output signal indicative of the alternating electric current carried by the conductor. The current sensor can be configured to measure the alternating electric current relative to a full scale at a resolution of 1000:1 and at an accuracy within 1%, wherein the full scale can range over 5000:1.

Abstract: An exemplary motion capture system, device, and method are disclosed herein to facilitate the implementation of active marker technology onto objects and systems whose design considerations require low weight, low power usage, and/or modular implementation. The exemplary motion capture system, device, and method connect light sources with power driving components through modular, flexible strips and optimized driver circuit configuration and structure for minute unmanned or remote vehicles or wearables having very stringent design constraints.

Abstract: In a method for detecting an attack compromise window in a CMS website for which a temporal sequence of a plurality of snapshots of website backups have been stored, a temporally ordered set of spatial elements from each snapshot is constructed. Spatial metrics are computed for each individual snapshot's elements. The collected spatial metrics are temporally correlated and queried against attack models to recover an attack timeline. Attack events in the attack timeline are labelled. A sequence of assigned attack labels is verified. The compromise window is extracted from the plurality of snapshots.

Abstract: Processing methods and apparatus for increasing a reaction chamber batch size. Such a method of processing deposition substrates (e.g., wafers), involves conducting a deposition on a first portion of a batch of deposition wafers in a reaction chamber, conducting an interval conditioning reaction chamber purge to remove defects generated by the wafer processing from the reaction chamber; and following the interval conditioning mid-batch reaction chamber purge, conducting the deposition on another portion of the batch of wafers in the reaction chamber. The interval conditioning reaction chamber purge is conducted prior to exceeding a baseline for acceptable defect (e.g., particle) generation in the chamber and is performed while no wafers are positioned in the reaction chamber.

Abstract: Methods and apparatuses for modifying a wafer surface using an organosilicon precursor are provided herein. The wafer surface is dosed with the organosilicon precursor following deposition of a dielectric material by an atomic layer deposition (ALD) process. In some implementations, the dielectric layer is made of silicon oxide. Dosing the wafer surface with the organosilicon precursor may occur in the same chamber as the ALD process. The organosilicon precursor may modify the wafer surface to increase its hydrophobicity so that photoresist adhesion is improved on the wafer surface. In some implementations, the wafer surface may be exposed to an inert gas RF plasma after dosing the wafer surface with the organosilicon precursor.

Abstract: A semiconductor wafer mass metrology apparatus comprising: a measurement chamber for measuring the weight and/or the mass of a semiconductor wafer; a first temperature changing part for changing a temperature of the semiconductor wafer before the semiconductor wafer is transported into the measurement chamber; and a first temperature sensor for sensing a first temperature, wherein the first temperature is: a temperature of the first temperature changing part; or a temperature of the semiconductor wafer when the semiconductor wafer is on the first temperature changing part, or when the semiconductor wafer leaves the first temperature changing part.

Abstract: The present invention includes systems and methods for providing cybersecurity to web-enabled applications for protection of critical software and host systems. The present invention is operable to build a Hidden Markov model of an application using automated analysis of code and documentation in order to characterize potential state and state transitions. The present invention is also operable to use additional data such as timing and proximity to assess incoming data. Incoming messages are then assigned a trust score based on Bayesian calculations.

Abstract: A cell to process a substrate includes at least one chamber wall, a membrane frame, and a membrane. The at least one chamber wall is arranged to form a cavity below a holder of the substrate. The membrane frame is disposed on the at least one chamber wall and across the cavity. The membrane is supported by the membrane frame and separating a first electrolyte from a second electrolyte. The membrane includes a surface extending from a center of the cavity radially outward at an angle relative to a reference plane, and wherein the angle is greater than or equal to 0° and less than or equal to 3°.

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

Abstract: Systems and methods for multi-level pulsing are described. The systems and methods include generating four or more states. During each of the four or more states, a radio frequency (RF) generator generates an RF signal. The RF signal has four or more power levels, and each of the four or more power levels corresponds to the four or more states. The multi-level pulsing facilitates a finer control in processing a substrate.

Abstract: A method includes: receiving a first signal from a first sensor at a first filter and preventing passage of a first portion of the first signal via the first filter. The first portion of the first signal is at a first RF. A second portion of the first signal is indicative of a first temperature of a first electrode in a plasma chamber. The method further includes: outputting a second signal from the first filter; receiving the second signal at a second filter; and preventing passage of a portion of the second signal via the second filter. The portion of the second signal is at a second RF. The second RF is less than the first RF. The first filter and the second filter are implemented on a printed circuit board. The method further includes adjusting a temperature of the first electrode based on an output of the second filter.

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.

Abstract: Apparatuses and methods are provided. Some methods may include providing a substrate to a processing chamber, the substrate having a first material adjacent to and covering a surface of a second material, modifying a layer of the first material by flowing a first process gas onto the substrate and thereby creating a modified layer of the first material, removing the modified layer of the first material by flowing a second process gas onto the substrate, and converting, when the surface of the second material is uncovered via removal of the modified layer, the surface to a converted layer of the second material by flowing a third process gas onto the substrate, in which the first and second process gases are less reactive with the converted layer than with the first material and the second material.

Abstract: Catalysts and methods for catalytic hydrogenolysis of a polymer. The method comprises a) activating a catalyst with a hydrogen source to provide an activated catalyst, wherein the catalyst comprises: i) a MXene support of Formula I: Mn+1XnTx (I); wherein each M is independently an early transition metal; X is carbon or nitrogen; Tx is a surface functional group wherein x is 0-10; and n is 1, 2, 3, or 4; and ii) a supported metal, wherein loading of the supported metal on the MXene support is less than 5% w/w based on the weight of the catalyst; and b) contacting a mixture of the activated catalyst, hydrogen gas, and a polymer at a temperature of at least about 200° C. for a period of time that is sufficient for catalytic hydrogenolysis of the polymer; thereby converting the polymer to a fuel.

Abstract: A method for performing an etch process on a substrate includes applying a bias signal and a source signal to an electrode of a plasma processing system. The bias signal and the source signal are pulsed RF signals that together define a repeated pulsed RF cycle, wherein each pulsed RF cycle sequentially includes a first state, a second state, a third state, and a fourth state. The power level of the bias signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state. The power level of the source signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state.

Abstract: Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Abstract: Systems and methods are provided for personalizing autonomous driving. The system can receive historical data on a driver of the vehicle's performance and population data indicating a population driving style. Speed data can be recorded as the driver of the vehicle drives the vehicle during a trial period. The historical data, population data, and speed data can be input into a machine learning model to determine a style for the driver. The system can receive one or more parameters from the machine learning model indicating the style. These parameters can be applied to the vehicle's automated driving system.