Abstract: Thermoelectric conversion cells of a thermoelectric conversion element include a thermoelectric conversion layer formed on a main surface of a substrate, an insulating layer covering the thermoelectric conversion layer, a first electrode including a first layer and a second layer, and a second electrode. The first layer connects to the main surface of the thermoelectric conversion layer via a first contact hole, and the second layer covers the first layer. The second electrode connects to the main surface of the thermoelectric conversion layer via a second contact hole. The second layer and the second electrode, and the first layer are formed from materials having different work functions. In thermoelectric conversion cells that are adjacent to each other, the second layer of one of the thermoelectric conversion cells and the second electrode of the other of the thermoelectric conversion cells are formed integrally, and the thermoelectric conversion cells are connected in series.

Abstract: A sensor device is disclosed. The sensor device includes a monitor thin film transistor, a reference thin film transistor, and a control unit. The control unit is configured to determine a value measured from a sample based on a differential degree between output current of the reference thin film transistor and output current of the monitor thin film transistor.

Abstract: A gas sensing element that reflects light incoming along an optical path on a sensing face, where the light reflected by the gas sensing element changes depending on a quantity of a specific gas that is in contact with the gas sensing element, and where each of a first optical fiber and a second optical fiber bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on a same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical fiber and a point on the optical path where light enters the second optical fiber.

Abstract: An optical detection type chemical sensor includes a light source, a detection element and a photodetector. The detection element is constituted of a laminate in which a multilayer film including a chemical detection layer, an optical interference layer, and a half mirror layer is formed on a transparent substrate. At least one of the layers includes a magnetic material. Light from the light source is applied to the detection element under the condition that the light enters inside of the detection element from the rear surface of the transparent substrate on which the laminate is not formed and multiple reflection occurring in the laminate intensifies the magneto-optical effect. A subject is detected by using the photodetector to detect a magneto-optical signal indicating a change in reflected light from the laminate resulting from a change in an optical property resulting from a reaction in the chemical detection layer.

Abstract: A microdevice includes a first substrate; and a second substrate that is joined to the first substrate, and that includes at least one groove that forms at least one microchannel with the first substrate and recesses that form closed spaces with the first substrate. When viewed from above, the closed spaces are disposed sandwiching the least one microchannel.

Abstract: A display device includes a first polyimide layer, a first silicon oxide layer located above and in direct contact with the first polyimide layer, an amorphous silicon layer located above and in direct contact with the first silicon oxide layer, a second polyimide layer located above and in direct contact with the amorphous silicon layer, a plurality of light-emitting elements located above the second polyimide layer, a transistor array located above the second polyimide layer, the transistor array being configured to control light emission of the plurality of light-emitting elements, a transparent conductive layer located between the transistor array and the second polyimide layer, and a second silicon oxide layer located between and in direct contact with the transparent conductive layer and the second polyimide layer.

Abstract: A display device includes a substrate and a plurality of first light-emitting elements having a microcavity structure on the substrate. Each of the plurality of first light-emitting elements includes a first light-emitting film and a first upper electrode and a first lower electrode sandwiching the first light-emitting film. The peak wavelength of an emission spectrum of the first light-emitting film is in a wavelength range where the luminosity curve slopes negatively. Within a wavelength range where the peak wavelength of a multiple interference spectrum caused by the microcavity structure varies when the viewing angle varies from 0° to 60°, the luminosity curve slopes negatively, and the emission spectrum slopes positively.

Abstract: An optical forming device includes a light source to emit light for causing liquid photocurable resin to undergo curing and an optical modulator to modulate the light for causing the liquid photocurable resin to undergo curing in a pattern based on a shape of a three-dimensional object, and irradiate the liquid photocurable resin with the modulated light. The optical modulator includes a liquid crystal device to modulate the light for causing the liquid photocurable resin to undergo curing in the pattern, and emit the modulated light as linearly polarized light and an optical retardation device to impart a phase difference to the linearly polarized light emitted from the liquid crystal device, and emit the light imparted with the phase difference.

Abstract: A display device includes a light transmitting substrate in which pixels are arranged, the pixels having a light transmitting region that transmits external light and a light emitting region in which a light emitting element is disposed; a first light blocking layer that is disposed in the light emitting region and blocks the external light; a thin film transistor that is disposed on the first light blocking layer and controls a light emission of the light emitting element; a first insulating layer that covers an active layer of the thin film transistor; a second light blocking layer that is disposed on the first insulating layer so as to cover the thin film transistor and blocks the external light; and a first light blocking wall that is connected to the first light blocking layer and the second light blocking layer and blocks the external light.

Abstract: A fluorescent image analyzer stores a reference fluorescent-sample image and a subject fluorescent-sample image. The reference fluorescent-sample image is an image obtained by illuminating a reference fluorescent sample about which relation of in-plane fluorescence intensities is known with linearly polarized light and capturing a first specific polarization component of fluorescence from the reference fluorescent sample. The subject fluorescent-sample image is an image obtained by illuminating a subject fluorescent sample with linearly polarized light and capturing a second specific polarization component of fluorescence from the subject fluorescent sample. The fluorescent image analyzer is configured to determine correction coefficients to correct non-uniformity in measurement of light intensities among pixels of a captured image based on the reference fluorescent-sample image, and correct light intensities of the pixels of the subject fluorescent-sample image based on the correction coefficients.

Abstract: A liquid crystal display device includes a first liquid crystal display panel including a first light-transmitting substrate (thickness T2?0.3 mm), a substrate, a first liquid crystal, a first polarizing plate having a second main surface that is adhered to the first light-transmitting substrate; an adhering layer provided on a first main surface of the first polarizing plate; and a second light-transmitting substrate (thickness T3?0.3 mm) adhered to the first main surface by the adhering layer (thickness T1?0.15 mm). An adhesion parameter ? is 1.04 or less when a maximum height of an unevenness of the first main surface 0.0005 mm or less, and the adhesion parameter ? is 0.43 or less when the maximum height of the unevenness of the first main surface is greater than 0.0005 mm and 0.001 mm or less.

Abstract: A display device includes a pixel circuit on a substrate, a data line configured to transmit a data signal for the pixel circuit on the substrate, and a monitoring circuit. The pixel circuit includes a driving transistor configured to control an amount of electric current supplied to a light-emitting element, and a first switching transistor disposed between the light-emitting element and the driving transistor. The first switching transistor switches between supplying and not supplying the light-emitting element with electric current from the driving transistor. The monitoring circuit monitors a signal at a monitoring point located between the driving transistor and the first switching transistor in the pixel circuit.

Abstract: A display device includes a display panel and a control circuit configured to process a signal for the display panel. The control circuit is configured to acquire respective gray levels specifying brightness for a plurality of subpixels in one subpixel row, determine correction amounts to the gray levels for the plurality of subpixels based on distribution of the gray levels and the individual gray levels for the plurality of subpixels, and correct the gray levels for the plurality of subpixels by the correction amounts.

Abstract: A gas sensing element reflects light incoming along an optical path on a sensing face. The light reflected by the gas sensing element changes in a characteristic depending on quantity of a specific gas that is in contact with the gas sensing element. Each of a first optical element and a second optical element bends the optical path. The gas sensing element, a light source, a photodetector, and a magnetic field applicator are disposed on the same side with respect to a virtual plane that is perpendicular to an incident plane of the incoming light to the sensing face of the gas sensing element and includes a point on the optical path where light goes out from the first optical element and a point on the optical path where light enters the second optical element.

Abstract: A thermoelectric transducer includes a substrate, a thermoelectric film on the substrate, a first electrode on the substrate, and a second electrode on the substrate, the second electrode being different from the first electrode in work function. The first electrode and the second electrode are in contact with the same side of the thermoelectric film. The outer edge of the thermoelectric film is located inner than the outer edge of the substrate.

Abstract: A liquid crystal light deflection apparatus includes a first substrate including a first electrode, a second substrate including a second electrode, and liquid crystals sandwiched between the first substrate and the second substrate. A high-resistivity layer is provided on at least one of the first electrode or the second electrode. The high-resistivity layer is covered sequentially by a first barrier layer formed from metal oxide and a second barrier layer formed from metal nitride or metal carbide.

Abstract: A light ray direction control element includes a first light transmitting substrate, a second light transmitting substrate facing the first light transmitting substrate, a first light transmitting region provided on a first main surface of the first light transmitting substrate, a second light transmitting region provided on a first main surface of the second light transmitting substrate, first light absorbing regions positioned among the first light transmitting region, and second light absorbing regions positioned among the second light transmitting region. The light ray direction control element further includes a light transmitting dispersion medium enclosed in the first light absorbing regions and the second light absorbing regions, and charged electrophoretic particles dispersed in the light transmitting dispersion medium.

Abstract: A first oxide semiconductor thin-fil transistor includes a top gate electrode, a first metal oxide film, and a top gate insulating film between the top gate electrode and the first metal oxide film. A second oxide semiconductor thin-film transistor includes a bottom gate electrode, a second metal oxide film, and a bottom gate insulating film between the bottom gate electrode and the second metal oxide film. A storage capacitor stores a signal voltage to the bottom gate electrode. A first electrode of the storage capacitor includes a part of the bottom gate electrode. A source/drain region of the first oxide semiconductor thin-film transistor is in contact with the bottom gate electrode in a contact hole in the bottom gate insulating layer. Capacitance per unit area of the bottom gate insulating film is smaller than capacitance per unit area of the top gate insulating film.

Abstract: Provided is a support for fluorescence polarization immunoassay of which reaction parts are loaded with an antibody and a fluorescent labeling substance. The plurality of reaction parts may be loaded with different concentrations of an antibody and a fluorescent labeling substance. Further, antibodies having different binding affinities for a target substance may be loaded. With such a support, fluorescence polarizations can be measured simply by adding a sample solution containing a target substance to the reaction parts, and a wide measurement range of the concentration the target substance can be secured.

Abstract: A thin-film device includes a polysilicon element and an oxide semiconductor element. The polysilicon element includes a first part made of low-resistive polysilicon. The oxide semiconductor element includes a second part made of low-resistive oxide semiconductor. The first part and the second part are disposed to overlap each other and connected.