Patents Assigned to Tokai Carbon
-
Patent number: 12371324Abstract: The present invention relates to a carbon-silicon composite and a preparation method therefor. An aspect of the present invention provides a carbon-silicon composite comprising: a core including a carbon material and silicon particles; and a shell which is formed on the surface of the core and includes amorphous carbon, wherein the silicon particles are uniformly distributed from the center to the surface of the core.Type: GrantFiled: November 22, 2021Date of Patent: July 29, 2025Assignee: Tokai Carbon Korea Co., Ltd.Inventor: Seok Min Kang
-
Patent number: 12368026Abstract: Provided are a polycrystalline SiC compact capable of achieving uniform plasma etching when used as electrodes and a method for manufacturing the same. A polycrystalline SiC compact has a major surface in which Wa (0 to 10 mm) is 0.00 to 0.05 ?m or less, Wa (10 to 20 mm) is 0.13 ?m or less, and Wa (20 to 30 mm) is 0.20 ?m or less.Type: GrantFiled: September 26, 2022Date of Patent: July 22, 2025Assignee: TOKAI CARBON CO., LTD.Inventors: Yohei Harada, Junya Oishi
-
Publication number: 20250223448Abstract: A modified recycled carbon black having a N2SA of 50 m2/g or more and 250 m2/g or less, and having, in a Raman spectrum obtained by performing measurement at an excitation wavelength of 532 nm by laser Raman spectroscopy, a peak intensity of a peak having a peak top in a range of 1,580±20 cm?1, with the peak intensity of a peak having a peak top in a range of 1,350±20 cm?1 being 100, of 84 or more and 111 or less. The present invention can provide a recycled carbon black having strong bonding with rubber components and having high reinforcing properties for rubber products.Type: ApplicationFiled: September 7, 2023Publication date: July 10, 2025Applicant: TOKAI CARBON CO., LTD.Inventors: Kengo Kurisu, Daishi Kiriyama
-
Publication number: 20250188603Abstract: Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer.Type: ApplicationFiled: February 14, 2025Publication date: June 12, 2025Applicant: TOKAI CARBON KOREA CO., LTDInventor: JOUNG IL KIM
-
Publication number: 20250154647Abstract: An object of the present disclosure is to provide a SiC formed body having low resistance and a method for producing the SiC formed body. The present disclosure provides a SiC formed body wherein a volume resistivity thereof is 7.0×10?3 ?·cm or less, and a nitrogen concentration thereof is in a range exceeding 1000 ppm and up to 4500 ppm.Type: ApplicationFiled: November 14, 2023Publication date: May 15, 2025Applicant: TOKAI CARBON CO., LTD.Inventors: Mayuri IMAGAWA, Shohei OISHI, Akihiro KUROYANAGI, Reiko YASHIKIDA
-
Publication number: 20250136817Abstract: A method for producing modified recycled carbon black, the method including a main burner modification step of continuously supplying a main burner fuel, an oxygen-containing gas, and raw material recycled carbon black to a main burner combusting a fuel and generating a flame to perform combustion of the main burner fuel and while continuously generating a flame by the main burner, introducing the raw material recycled carbon black to the flame and passing the raw material recycled carbon black through the flame, and making a main burner total carbon combustion rate represented by Expression (1) below: Main burner total carbon combustion rate (%)=(A/(B+C))×100 (1) less than 100.0%. The present invention can provide a method for producing modified recycled carbon black that can remove rubber residuals adhering to the surface of raw material recycled carbon black effectively and continuously.Type: ApplicationFiled: September 7, 2023Publication date: May 1, 2025Applicant: TOKAI CARBON CO., LTD.Inventors: Daishi Kiriyama, Seiya Sakakibara, Kengo Kurisu, Atsushi Hieno
-
Publication number: 20250129250Abstract: To provide an electroconductive carbon black that can exhibit excellent electroconductivity when the electroconductive carbon black is used as a constituent component of various electroconductive materials, an electroconductive carbon black, wherein a nitrogen adsorption specific surface area (N2SA) of the electroconductive carbon black is 50 to 150 m2/g, a DBP absorption number of the electroconductive carbon black is 205 to 300 mL/100 g, and when an excitation wavelength is 532 nm, a full width at half maximum ?D of a Raman scattering peak that appears within a range of 1340 to 1360 cm?1 is 100 to 260 cm?1, is used as an electroconductive carbon black.Type: ApplicationFiled: October 19, 2023Publication date: April 24, 2025Applicant: TOKAI CARBON CO., LTD.Inventors: Keisuke Osamura, Kengo Kurisu, Atsushi Hieno, Yuki Akiyama, Masanori Ozawa
-
Publication number: 20250105048Abstract: A wafer lift pin includes: a rod-shaped base material made from glassy carbon; and an SiC film that is formed by a CVD method and coats a surface of the base material, wherein at least a sliding portion with an inner side of the insertion hole of the susceptor is coated with the SiC film; when the surface of the SiC film is observed with a scanning electron microscope, the surface of the wafer lift pin in an observation visual field is entirely coated with SiC particles, and a ratio of an observed area of small SiC particles having a particle diameter of 2.00 ?m or smaller to a total area coated with the SiC film in the observation visual field is 50% or more; and a portion abutting against the silicon wafer is not coated with the SiC film.Type: ApplicationFiled: November 21, 2022Publication date: March 27, 2025Applicant: TOKAI CARBON CO., LTD.Inventors: Takeshi Tokunaga, Yoshihiro Yamaguchi
-
Patent number: 12065572Abstract: A carbon black is disclosed which can exert excellent abrasion resistance while suppressing heat generation when incorporated into a rubber composition. A carbon black in which the total number of active sites represented by a product of a full width at half maximum of a Raman scattering peak appearing in a range of 1340 to 1360 cm?1 when an excitation wavelength is 532 nm and a specific surface area when nitrogen gas is adsorbed is 3.60×104 to 8.20×104 (cm?1·m2/g), and when a nuclear magnetic resonance signal of a spin-spin relaxation process observed by a solid echo method is represented by a sum of a first signal and a second signal having a time constant larger than that of the first signal, an amount of hydrogen represented by a signal intensity per unit mass at time 0 of the first signal is 50.0 to 250.0 (/g).Type: GrantFiled: March 26, 2020Date of Patent: August 20, 2024Assignee: TOKAI CARBON CO., LTD.Inventors: Kengo Kurisu, Takuya Takahashi, Yuki Akiyama
-
Patent number: 12062568Abstract: Described herein are edge ring among components for manufacturing semiconductors used in a semiconductor manufacturing process. The SiC edge ring includes: a first deposition part having a plasma-damaged portion and a non-damaged portion and including SiC; and a second deposition part formed on the first deposition part and including SiC, wherein a boundary between the damaged portion of the first deposition part and the second deposition part includes an uneven surface.Type: GrantFiled: March 11, 2020Date of Patent: August 13, 2024Assignee: TOKAI CARBON KOREA CO., LTDInventor: Kyoung Jun Kim
-
Publication number: 20240183071Abstract: The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 ?m or less, a nitrogen concentration of 2.7×1019 to 5.4×1020 (pcs./cm3), and the product of the carrier density×Hall mobility of 4.0×1020 to 6.0×1021 (pcs./cmVsec).Type: ApplicationFiled: February 15, 2023Publication date: June 6, 2024Applicant: TOKAI CARBON CO., LTD.Inventors: Takuji IIDA, Hiroyuki JINDO, Shohei OISHI, Ikuya TAKAHASHI, Yuji USHIJIMA, Reiko YASHIKIDA
-
Patent number: 11981790Abstract: A carbon black wherein a nitrogen adsorption specific surface area (N2SA) is 25 to 60 m2/g, a DBP absorption number is 90 to 180 cm3/100 g, a ratio of the nitrogen adsorption specific surface area (N2SA) to an iodine adsorption number (IA) (N2SA/IA) is 1.10×103 to 1.50×103 m2/g, a hydrogen content by NMR is 150 to 250 /g, and ?D is 260 to 290 cm?1.Type: GrantFiled: August 13, 2021Date of Patent: May 14, 2024Assignee: Tokai Carbon Co. Ltd.Inventors: Akihiro Sakakibara, Yuki Kubota, Keisuke Osamura
-
Patent number: 11976353Abstract: The present disclosure relates to a tantalum carbide-coated carbon material and a method for manufacturing the same, and an aspect of the present disclosure provides a tantalum carbide-coated carbon material including: a carbon substrate; and a tantalum carbide coating layer formed on the carbon substrate by a CVD method, wherein microcracks included in the tantalum carbide coating layer have a maximum width of 1.5 ?m to 2.6 ?m.Type: GrantFiled: December 1, 2021Date of Patent: May 7, 2024Assignee: Tokai Carbon Korea Co., LtdInventor: Dong Wan Jo
-
Publication number: 20240147585Abstract: A graphite electrode includes a pole having a socket in an internal screw shape at an end portion, and a nipple in an external screw shape that can be fastened to the socket, wherein a value obtained by subtracting an effective diameter on a small diameter end side of the nipple from an effective diameter on a small diameter end side of the socket is 0.05 to 0.7 mm, and a value obtained by subtracting a taper angle of the socket from a taper angle of the nipple is ?2 minutes to ?3 minutes 30 seconds.Type: ApplicationFiled: September 29, 2021Publication date: May 2, 2024Applicant: TOKAI CARBON CO., LTD.Inventors: Yohei Hirumi, Yoshihiko Kashihara, Mitsuhiro Adachi
-
Publication number: 20240025746Abstract: The present invention relates to a carbon-silicon composite and a preparation method therefor. An aspect of the present invention provides a carbon-silicon composite comprising: a core including a carbon material and silicon particles; and a shell which is formed on the surface of the core and includes amorphous carbon, wherein the silicon particles are uniformly distributed from the center to the surface of the core.Type: ApplicationFiled: November 22, 2021Publication date: January 25, 2024Applicant: TOKAI CARBON KOREA CO., LTDInventor: Seok Min KANG
-
Publication number: 20230323073Abstract: A carbon black wherein a nitrogen adsorption specific surface area (N2SA) is 25 to 60 m2/g, a DBP absorption number is 90 to 180 cm3/100 g, a ratio of the nitrogen adsorption specific surface area (N2SA) to an iodine adsorption number (IA) (N2SA/IA) is 1.10×103 to 1.50×103 m2/g, a hydrogen content by NMR is 150 to 250 /g, and ?D is 260 to 290 cm?1.Type: ApplicationFiled: August 13, 2021Publication date: October 12, 2023Applicant: TOKAI CARBON CO., LTD.Inventors: Akihiro SAKAKIBARA, Yuki KUBOTA, Keisuke OSAMURA
-
Patent number: 11780732Abstract: The present disclosure relates to a tantalum carbide coating material, and more specifically, to a tantalum carbide coating material comprising: a carbon substrate; and a tantalum carbide coating formed on the carbon substrate, wherein a thermal expansion coefficient difference between the carbon substrate and the tantalum carbide coating is 1.0×10?6/° C. or more.Type: GrantFiled: December 17, 2019Date of Patent: October 10, 2023Assignee: TOKAI CARBON KOREA CO., LTD.Inventor: Dong Wan Jo
-
Patent number: 11697874Abstract: The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.Type: GrantFiled: December 1, 2021Date of Patent: July 11, 2023Assignee: TOKAI CARBON KOREA CO., LTDInventor: Dong Wan Jo
-
Patent number: 11697620Abstract: The present invention relates to a method for preparing a SiC—Si3N4 composite material and a SiC—Si3N4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si3N4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si3N4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si3N4, which is a material with a high thermal shock strength, to grow together via a CVD method.Type: GrantFiled: March 11, 2020Date of Patent: July 11, 2023Assignee: TOKAI CARBON KOREA CO., LTDInventor: Sang Chul Lee
-
Semiconductor manufacturing parts comprising SiC deposition layer, and manufacturing method therefor
Patent number: 11694893Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.Type: GrantFiled: December 18, 2017Date of Patent: July 4, 2023Assignee: TOKAI CARBON KOREA CO., LTD.Inventors: Joung Il Kim, Ki Won Kim, Jong Hyun Kim