Abstract: The present invention relates to a carbon-silicon composite and a preparation method therefor. An aspect of the present invention provides a carbon-silicon composite comprising: a core including a carbon material and silicon particles; and a shell which is formed on the surface of the core and includes amorphous carbon, wherein the silicon particles are uniformly distributed from the center to the surface of the core.

Abstract: The present disclosure relates to a tantalum carbide coating material, and more specifically, to a tantalum carbide coating material comprising: a carbon substrate; and a tantalum carbide coating formed on the carbon substrate, wherein a thermal expansion coefficient difference between the carbon substrate and the tantalum carbide coating is 1.0×10?6/° C. or more.

Abstract: The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.

Abstract: The present invention relates to a method for preparing a SiC—Si3N4 composite material and a SiC—Si3N4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si3N4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si3N4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si3N4, which is a material with a high thermal shock strength, to grow together via a CVD method.

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 ?m or less and (111) plane preferential growth according to X-ray diffraction analysis.

Abstract: The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).

Abstract: The present invention relates to a component for manufacturing a semiconductor manufactured by using a CVD method. A SiC structure formed by the CVD method according to one aspect of the present invention is used such that the SiC structure is exposed to plasma inside a chamber, wherein the SiC structure comprises a crystal grain structure in which the length in a first direction is longer than the length in a second direction when defining a direction perpendicular to the surface most exposed to the plasma as the first direction and a direction horizontal to the surface most exposed to the plasma as the second direction.

Abstract: The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.

Abstract: Described herein are a bonded ceramic and a manufacturing method therefor. The bonded ceramic includes: a first ceramic substrate; and a second ceramic substrate, wherein the first ceramic substrate and the second ceramic substrate are bonded to each other without an adhesive layer therebetween and include pores, each of which is formed along a bonded surface therebetween and has a size of 0.01 to 50 ?m.

Abstract: The present invention relates to a method for manufacturing semiconductor manufacturing parts used in a dry etching process, and a jig usable therein, and the method for manufacturing semiconductor manufacturing parts by using the jig, of the present invention, comprises the steps of: preparing a base material; supporting at least one surface of the base material by the jig; forming a deposition layer by spraying source gas on the base material supported by the jig; and processing the base material on which the deposition layer is formed, wherein the jig has a tapered cross-section of which the width increases in the direction of approaching the surface of the base material.

Abstract: The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.

Abstract: The present disclosure relates to a tantalum carbide-coated carbon material and a method for manufacturing the same, and an aspect of the present disclosure provides a tantalum carbide-coated carbon material including: a carbon substrate; and a tantalum carbide coating layer formed on the carbon substrate by a CVD method, wherein microcracks included in the tantalum carbide coating layer have a maximum width of 1.5 ?m to 2.6 ?m.

Abstract: The present invention relates to a method for preparing a SiC—Si3N4 composite material and a SiC—Si3N4 composite material prepared according to same and comprises the steps of: preparing a mold; and forming a SiC—Si3N4 composite material by introducing, to the mold, a source gas comprising Si, N and C, at 1100 to 1600° C. More particularly, the present invention provides the SiC—Si3N4 composite material of high purity that is applicable to a semiconductor process, and increases the thermal shock strength of a SiC material by causing Si3N4, which is a material with a high thermal shock strength, to grow together via a CVD method.

Abstract: The present invention relates to a carbon material coated with tantalum carbide and, more specifically, to a carbon material coated with tantalum carbide, comprising: a carbon substrate; and a tantalum carbide coated surface formed on the carbon substrate, wherein the carbon material coated with tantalum carbide has, as main peaks, X-ray diffraction peaks of the (111) plane, the (200) plane, the (220) plane and the (311) plane, of the tantalum carbide coated surface, and the peak of the (111) plane among the peaks has the maximum diffraction intensity. The present invention can provide the carbon material coated with tantalum carbide, having excellent chemical and physical resistance and extended lifespan.

Abstract: A method of manufacturing a material including tantalum carbide (TaC) with a particularly low impurity content, and a TaC material formed by the method are provided. The method includes preparing a base material, and forming a TaC coating layer on a surface of the base material at a temperature of 1,600° C. to 2,500° C.

Abstract: The present invention relates to an anode active material, a preparation method therefor, and a lithium secondary battery comprising same. An anode active material according to one aspect of the present invention comprises a carbon material and silicon particles, wherein the carbon material encompasses, inside bulk particles, the silicon particles and a method for preparing the anode active material, according to another aspect, comprises the steps of: preparing a mixture powder by mixing a carbon material and silicon particles; and mechanically over-mixing the mixture powder.

Abstract: The present invention relates to a semiconductor manufacturing component for manufacturing a semiconductor device by using a substrate such as a wafer in a dry etching process, and a manufacturing method thereof. The semiconductor manufacturing component comprising a deposition layer covering an interlayer boundary according to the present invention comprises: a base material containing carbon; a first deposition layer formed on the base material; a second deposition layer formed on the first deposition layer; and a third deposition layer formed on the first deposition layer and the second deposition layer, and formed to cover at least one portion of a boundary line between the first deposition layer and the second deposition layer.

Abstract: The present invention relates to carbon material having, on the base material, a coating layer that includes TaC, and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC, which may have a maximum diffraction peak value on the (111) surface, where diffraction peak values may be generated by diffractions of X-rays in XRD analysis.

Abstract: Described herein is a method for manufacturing an activated carbon for an electrode material, the method including a step of heat-treating an activated carbon material in an atmosphere containing a chlorine-containing gas, wherein the content of metal impurities contained in the activated carbon material after the heat treating step is 0.1 to 20 ppm.