Abstract: Described herein is a method for manufacturing an activated carbon for an electrode material, the method including a step of heat-treating an activated carbon material in an atmosphere containing a chlorine-containing gas, wherein the content of metal impurities contained in the activated carbon material after the heat treating step is 0.1 to 20 ppm.

Abstract: The present invention relates to an activated carbon and a method for manufacturing same and, more specifically, to: an activated carbon containing micropores and mesopores, wherein a micropore volume per unit mass is 0.9 cm3/g or less and a volume fraction of pores having a diameter of 5 ? or more in the micropore volume per unit mass is 50% or more; and a method for manufacturing same.

Abstract: The present invention relates to carbon material having, on the base material, a coating layer that includes tantalum carbide (TaC), and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC having average crystal grain size of 10-50 ?m.

Abstract: The present invention relates to a method for manufacturing activated carbon for electrode material, and, more specifically, to activated carbon having alkali metal content of 50 ppm or less for electrode material, and to a method for manufacturing the activated carbon.

Abstract: The present invention relates to carbon material having, on the base material, a coating layer that includes TaC, and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC, which may have a maximum diffraction peak value on the (111) surface, where diffraction peak values may be generated by diffractions of X-rays in XRD analysis.

Abstract: The present invention relates to carbon material having, on the base material, a coating layer that includes tantalum carbide (TaC), and a method for producing the carbon material. For example, the carbon material may include a base material and a coating layer on the surface of the base material. The coating layer may include TaC having average crystal grain size of 10-50 ?m.

Abstract: A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

Abstract: Provided according to an embodiment of the present invention is a component for fabricating an SiC semiconductor, having a plurality of layers having different transmittances, the component comprising two or more superposed layers, wherein each of the superposed layers contains SiC and has a transmittance value different from that of another adjacent layer.

Abstract: The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth.

Abstract: A method of repairing a semiconductor processing component is provided, in which the method includes preparing a semiconductor processing component including a tantalum carbide (TaC) coating layer on which a silicon carbide (SiC)-deposited layer is formed, and performing a thermal process on the semiconductor processing component at a temperature of 1,700° C. to 2,700° C. under a gaseous condition using at least one gas selected from the group consisting of a gas including hydrogen, a gas including chlorine, and an inert gas, or under a vacuum condition.

Abstract: A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 ?m from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.

Abstract: A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 ?m from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.

Abstract: Provided are polycarbosilane and a method of producing the same. The polycarbosilane contains an allyl group, and thus can be cured by UV absorption when not exposed to the air.

Abstract: A metal coated with ceramic and a method manufacturing the same. The metal contains chromium. A buffer layer is disposed on the metal, and a silicon carbide (SiC) coating layer is disposed on the buffer layer. The buffer layer has a thermal expansion coefficient between those of the metal and the SiC coating layer. The method includes annealing a metal containing chromium to form a chromium oxide layer on the metal, dissolving polycarbosilane (PCS) in a solvent to form a PCS coating solution, coating the chromium oxide layer with the PCS solution, and annealing the to form an SiC coating.

Abstract: Provided are polycarbosilane and a method of producing the same. The polycarbosilane contains an allyl group, and thus can be cured by UV absorption when not exposed to the air.

Abstract: A metal coated with ceramic and a method manufacturing the same. The metal contains chromium. A buffer layer is disposed on the metal, and a silicon carbide (SiC) coating layer is disposed on the buffer layer. The buffer layer has a thermal expansion coefficient between those of the metal and the SiC coating layer. The method includes annealing a metal containing chromium to form a chromium oxide layer on the metal, dissolving polycarbosilane (PCS) in a solvent to form a PCS coating solution, coating the chromium oxide layer with the PCS solution, and annealing the to form an SiC coating.

Abstract: A metal coated with a ceramic material and a method of manufacturing the same are provided. The method includes a) preparing a coating solution by dissolving a SiC precursor in a solvent; b) coating a metal material with the coating solution using a non-thermal coating technique; c) forming a SiC precursor coating layer on the metal material by drying the metal material coated with the coating solution in an oxygen-free atmosphere; d) partially removing a polymer by preprocessing the SiC precursor coating layer; and e) converting the SiC precursor coating layer into a SiC coating layer using a thermal treatment process. In this method, the SiC precursor is coated on the metal material and converted into the SiC coating layer, so that a pure SiC coating layer can be formed without causing cracking or delaminating. Thus, the metal material can have higher resistance to oxidation, chemicals, and heat.