Abstract: A negative electrode material for a nonaqueous secondary battery capable of realizing a nonaqueous secondary battery having a small charging/discharging irreversible capacity at an initial cycle and exhibiting an excellent high-rate charging/discharging characteristics and an excellent cycle performances is provided. The main component of the material is graphite particles. The median diameter is 5 ?m or more, and 40 ?m or less in the volume-basis particle size distribution based on the laser diffraction/scattering particle size distribution measurement. The tapping density is 0.7 g/cm3 or more. The specific surface area measured by a BET method is 0.2 m2/g or more, and 8 m2/g or less. The average circularity is 0.83 or more, and 1.00 or less. When an electrode is produced by a predetermined method for manufacturing an electrode and, the resulting electrode is subjected to X-ray diffraction, the graphite crystal orientation ratio I110/I004 on the electrode is 0.

Abstract: A carbon black aqueous dispersion which has excellent dispersibility and ink performance and is suitable as an aqueous black ink for an inkjet printer or the like, and a method of producing the same. The carbon black aqueous dispersion is obtained by spraying a slurry including carbon black, a surface chemical modifier, and an aqueous medium under pressure from a nozzle to cause collision between sprayed streams or between sprayed streams and a wall surface. The carbon black agglomerates have a maximum particle diameter of 1 ?m or less.

Abstract: A metal coated with a ceramic material and a method of manufacturing the same are provided. The method includes a) preparing a coating solution by dissolving a SiC precursor in a solvent; b) coating a metal material with the coating solution using a non-thermal coating technique; c) forming a SiC precursor coating layer on the metal material by drying the metal material coated with the coating solution in an oxygen-free atmosphere; d) partially removing a polymer by preprocessing the SiC precursor coating layer; and e) converting the SiC precursor coating layer into a SiC coating layer using a thermal treatment process. In this method, the SiC precursor is coated on the metal material and converted into the SiC coating layer, so that a pure SiC coating layer can be formed without causing cracking or delaminating. Thus, the metal material can have higher resistance to oxidation, chemicals, and heat.

Abstract: The present invention provides a low electric conductivity, high heat radiation polymeric composition which includes a polymeric material and a carbon-based filler compounded with the polymeric material, wherein the carbon-based filler has an electron withdrawing agent grafted onto a surface of the carbon-based filler.

Abstract: The present invention provides a carbon black for coloring cement excelling in dispersibility in cement slurry, exhibiting superior adhesion to a cement matrix, and excelling in coloring characteristics and strength, and a method for coloring a cement-formed product using the carbon black. The carbon black for coloring cement is a carbon black in which humic acids are adsorbed on the surface by a surface treatment using an aqueous solution in which the humic acids are dissolved. The carbon black is preferably a carbon black on which humic acids are adsorbed by wet-granulation and drying using an aqueous solution in which the humic acids are dissolved as granulation water. The coloring method includes adding and mixing a water suspension in which carbon black, on which the humic acids are adsorbed, is dispersed in water with cement slurry, or directly adding and mixing carbon black on which the humic acids are adsorbed with the cement slurry, thereby coloring a cement-formed product.

Abstract: A graphite cathode and a graphite anode are placed opposite each other through an insulating plate having a notch. A voltage is applied between both of the electrodes to generate arc discharge at the notch of the insulating plate. A given area of the graphite anode is evaporated from an electrode point of the arc discharge, and simultaneously an arc jet is generated from the notch. Thereby, a carbon nanoparticle comprising soot of carbon nanomaterial containing carbon nanohorn is generated. The soot is deposited on a recovering plate for recovery.

Abstract: A nitrogen-doped n-type SiC-formed material consisting of high purity ?-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrier gas to form a SiC film on a substrate, and removing the substrate. The material has a specific gravity of 3.15 or more, light transmittance of 1.1 to 0.05%, and resistivity of 3×10?3 to 10?5 ?m.

Abstract: An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow protection member for protecting the inner wall of a plasma processing chamber is integrally formed of glass-like carbon materials with a volume resistivity of 1×10−2 &OHgr;·cm or less and a thermal conductivity of 5W/m·K or more The protection member preferably has a thickness of 4 mm or more and the average surface roughness (Ra) of the inside of the hollow structure is preferably 2.0 &mgr;m or less.

Abstract: Dummy wafers of SiC having low light transmission properties to light from the light source of a photo-sensor are used, and when wafers undergoes a heat treatment, the dummy wafers are transferred from a wafer cassette to a wafer boat in which the number of dummy wafers and a state of arrangement of the wafers are detected or monitored.

Abstract: A graphite material coated with silicon carbide which exhibits superior physical impact resistance and can be manufactured at low cost. The material includes a graphite substrate coated with a silicon carbide film with a thickness of 30-50 &mgr;m, wherein a mixed layer of graphite and silicon carbide with a thickness of 10-500 &mgr;m is provided from the interface of the graphite substrate and the silicon carbide film through the inside of the graphite substrate, and the silicon carbide film has a peel strength of 5 Mpa or more. The silicon carbide film is attached preferably by the CVD method and is suitably used as a material for an apparatus for drawing-up single crystals of silicon.

Abstract: An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow protection member for protecting the inner wall of a plasma processing chamber is integrally formed of glass-like carbon materials with a volume resistivity of 1×10−2 &OHgr;·cm or less and a thermal conductivity of 5 W/m·K or more. The protection member preferably has a thickness of 4 mm or more and the average surface roughness (Ra) of the inside of the hollow structure is preferably 2.0 &mgr;m or less.

Abstract: A formed SiC product having a low degree of light transmittance useful in a variety of heat resistant components such as equalizing rings, dummy wafers, and other components employed in semiconductor manufacturing facilities, and the manufacturing method thereof. The product is a CVD-formed SiC product prepared by growing a coating on a substrate with a CVD process and thereafter removing the substrate. The product is characterized by having at least one SiC layer with different grain characteristics located either on its surface or within the main structure, and having a light transmittance rate of 0.4% or less for the wavelength range from 300 to 2,500 nm, and 2.5% or less for the wavelength range exceeding 2,500 nm. The method for manufacturing the formed SiC product is characterized by forming at least one SiC layer with different grain characteristics either on its surface or within the main structure provided by changing the CVD reaction conditions.

Abstract: A hard-type high-structure carbon black capable of providing the rubber comprising the carbon black with a high modulus, superior abrasion resistance, and gripping performance, exhibiting high abrasion resistance corresponding to the modulus, and suitable for tire treads, and a rubber composition. The hard-type high-structure carbon black of the present invention having characteristics of 70≦CTAB≦250, 130≦DBP, 115≦24M4DBP, DBP-24M4DBP≦40, &Dgr;Dst/Dst≦0.8, and a correlation factor f calculated by the following formula (1) satisfying the following formula (2). f=(Tint/CTAB)·(24M4DBP/Dst)/(N2SA/IA)  (1) 1.2≦f≦1.6  (2) The rubber composition comprising 20-150 parts by weight of the above carbon black for 100 parts by weight of natural rubbers, synthetic rubbers, or blends of these rubbers.

Abstract: A plasma-etching electrode plate of glassy carbon is characterized by a thickness greater than 4.5 mm and a thermal conductivity greater than 5 W/m.multidot.K at 300K. Due to these characteristic properties, it has a uniform surface temperature distribution and permits etching on large semiconductor wafers (in excess of 8 inches in diameter) at a uniform etch rate. In addition, it is capable of stable etching for a long time and has a greatly improved durability. The glassy carbon should preferably be one which has a bulk specific gravity higher than 1.53 g/cc. The glassy carbon is obtained from one or more of thermosetting resin having a carbon yield higher than 20%.

Abstract: An SiC film having an excellent strength and thermal characteristics. The SiC film is prepared by a CVD process (i.e. CVD-SiC fabrication) and has a thermal conductivity along the direction of the SiC crystal growth between 100 and 300 W/m.multidot.K, and an average grain diameter of the internal structure between 4 to 12 .mu.m. It is preferred that the ratio of the thermal conductivity along the direction of the SiC crystal growth to the thermal conductivity in the perpendicular direction is in a range of 1.10 to 1.40.

Abstract: A method manufactures an electrode plate for a plasma processing device in which a semiconductor wafer is processed to form a highly integrated circuit. The method includes a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material one or two backing steps of carbonizing the heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon and a polishing step of polishing one face of the baking material, which is exposed to plasma, to a depth of 20 .mu.m to 1.25 mm.

Abstract: A jig used for heat treatment made from an SiC-coated silicon carbide material, wherein the SiC film is coated by the CVD method on a silicon carbide matrix in which silicon has been impregnated and wherein there are no pores with a diameter of 2 .mu.m or larger in the outer layer of the matrix within 200 .mu.m from the interface of the SiC film and the silicon carbide matrix when observed by a scanning electron microscope at a magnification of 400 times. The jig is manufactured by producing an SiC film on the surface of a silicon carbide matrix in which silicon has been impregnated by introducing a raw material compound for producing the SiC film and forming the SiC film at a temperature from 1000.degree. C. to 1290.degree. C. under a pressure from 500 to 760 Torr in a non-oxidative atmosphere. The jig exhibits superior resistance to high temperature heating cycles and excellent high thermal shock resistance required for heat treatment in semiconductor manufacturing.

Abstract: A plasma-etching electrode plate in the form of flat glassy carbon plate is characterized by a flatness with a warp smaller than 0.3 mm. This flatness permits the electrode plate to have a uniform surface temperature distribution which contributes to uniform etching on semiconductor wafers. The electrode plate is a glassy carbon plate obtained from one or more thermosetting resins having a carbon yield higher than 20%.

Abstract: A method for manufacturing a high strength isotropic graphite including a kneading step to mix an aggregate consisting of carbonaceous fine powder with a pitch binder a molding step to mold the raw material prepared by re-pulverizing the kneaded mixture using rubber press method and a carbonizing and graphitizing step to fire carbonize and graphitize the molded product. The aggregate uses a fine mosaic coke powder as the aggregate, which mosaic coke powder is finely pulverized in a jet mill to an average particle size of 1 .mu.m or less and a maximum particle size of 5 .mu.m or less, and has a surface average electrostatic field intensity of 1.2.times.10.sup.4 esu/cm.sup.2 or more. The invention provides a high strength isotropic graphite having a high bending strength of 120 MPa or more, which is suitable for piston components of gasoline engines and provides a method for manufacturing high strength isotropic graphite.

Abstract: A process for producing a preform having a buffer layer for use in compositing a metal matrix composite where the buffer layer is provided at a boundary between a composited portion and a non-composited portion of a metallic material in the metal matrix composite. The process includes subjecting a first dispersion including a liquid medium and a ceramic whisker homogeneously dispersed in the liquid medium to filtration under pressure to form a primary processed preform having a volume fraction of 12 to 30%, depositing on the primary processed preform a second dispersion including a liquid medium and, homogeneously dispersed therein, a binder and at least one member selected from the group consisting of a short fiber and a ceramic whisker, and drying the primary processed preform to form a buffer layer having a volume fraction lower than the volume fraction of the primary processed preform and in a range from 2 to 10%.