Abstract: A thin-film coating apparatus for coating a thin film on a material includes a casing, a spinner mounted in the casing for rotating the material, and a pipe disposed upwardly of the spinner and having in a lower end thereof a nozzle for dropping a film-forming coating solution onto the material. The casing comprises an annular upper plate, a cylindrical circumferential wall, and a bottom plate. The annular upper plate has defined therein gas flow passages for passage of an inert gas such as an N.sub.2 gas introduced from an exterior supply source, and gas ejector holes defined in the upper surface of the annular upper plate in communication with the gas flow passages for ejecting the inert gas toward the pipe.

Abstract: Waste oils of synthetic lubricants containing fluorine atom are admixed with a solvent containing fluorine atom compatible with the waste oils thereby causing contaminants contained in the waste oils to float up into the upper region on the mixed solution. The solvent containing fluorine atom is removed from the solution of the lower layer by way of evaporation, distillation or the like. The regenerated oils of the synthetic lubricants containing fluorine atom thus obtained are completely colorless and transparent in appearance, and they have properties and performances quite similar to those of the fresh oils.

Abstract: A high-frequency oscillator including an oscillation circuit (1) having a quartz crystal (X) and an amplifying element (Q.sub.2), a power amplifying circuit (3) for amplifying the output of the oscillation circuit, and a control system (Q.sub.7, 6) for varying a bias voltage of the amplifying element to thereby control the output power of the power amplification circuit. The control system comprises an FET (Q.sub.7) connected at the drain thereof to the amplifying element, and a control circuit (6) for applying a control signal to the gate of the FET.

Abstract: A solution-dropping nozzle device comprising an inner tube of a relatively large diameter which permits a solution to flow down therethrough, and a plurality of outer tubes of a relatively small diameter adapted for supplying a cleaning solvent to the lower end part of the inner tube, the outer tubes having at least the lower end parts thereof tight-fitted on an outer circumferential portion of the inner tube so as to enclose the same continuously. The outer tubes may have the lower ends thereof positioned higher than the lower end of the inner tube.The nozzle device is free from the concentration of a dropping solution at the nozzle end part, and the eduction of a solute thereof.

Abstract: The invention provides an improved process for providing wirings and electrodes of aluminum film on the surface of a substrate. Instead of the conventional method of directly forming an organic resist layer on the metal film, a remarkable improvement in the fineness and accuracy of patterning is obtained by providing a subsidiary masking layer, mainly composed of silicon dioxide, between the metal film and the organic resist layer; and pattern-wise etching by first etching the subsidiary masking layer through a patterned mask of the organic resist layer with a fluorine-containing etching gas to form a patterned subsidiary masking layer, and then etching the metal film with a chlorine-containing etching gas through the mask of the patterned subsidiary masking layer, followed by final removal of the remaining subsidiary masking layer.

Abstract: The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.