Abstract: A specimen solution assay device includes a specimen solution dropping device which drops a specimen solution sequentially onto each of sample pads of immunochromatographic sensors positioned adjacent to each other in a transverse direction of each of the immunochromatographic sensors, and an image information acquisition device which acquires image information of a test area of each of the immunochromatographic sensors onto which the specimen solution is dropped by the specimen solution dropping device.

Abstract: In a control method, a first processing is performed on an object to be processed by controlling a temperature of a base to a first temperature and controlling a temperature of an electrostatic chuck that is disposed on a mounting surface of the base so as to mount thereon the object to be processed and has a heater installed therein to a second temperature. A second processing is performed on the object by controlling a temperature of the base to a third temperature and controlling a temperature of the electrostatic chuck to a fourth temperature by a heater. In the control method, a difference between the first temperature and the second temperature and a difference between the third temperature and the fourth temperature are within a tolerable temperature of the junction layer for bonding the base and the electrostatic chuck.

Abstract: A delamination system delaminates a laminated substrate, in which a first substrate and a second substrate are bonded together, into the first substrate and the second substrate. The delamination system has a first processing block processing the laminated substrate or the delaminated first substrate and a second processing block processing the delaminated second substrate. The first processing block has a delamination station having a delamination device that delaminates the laminated substrate transferred by a first transfer device into the first substrate and the second substrate. The second processing block has a second cleaning station and a delivery station. The second cleaning station has a second cleaning device cleaning the delaminated second substrate. The delivery station is disposed between the second cleaning station and the delamination station. The delivery station receives the delaminated second substrate from the delamination station and delivers it to the second cleaning station.

Abstract: A heat treatment apparatus includes: a reaction tube processing a plurality of substrates; a support member supporting the reaction tube; a flange protruding outwardly from a lower end of the reaction tube: a concave portion formed in an outer periphery of the flange; and a rotatable roller installed in a top surface of the support member. The rotatable roller engages the concave portion and positions the reaction tube in a circumferential direction.

Abstract: Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base.

Abstract: A method for forming a patterned organic electrode includes printing a toner on a surface of a substrate using a laser printer such that a reverse pattern formed of the toner is formed on the substrate, supplying a solution containing PEDOT and PSS onto the substrate having the reverse pattern formed of the toner such that the solution containing PEDOT and PSS is supplied into a region of the surface of the substrate not covered with the reverse pattern, drying the solution containing PEDOT and PSS supplied onto the substrate, and supplying onto the substrate a stripping solution containing a toner removing solvent which removes the toner and a high conductive solvent which selectively removes the PSS such that the reverse pattern formed of the toner is stripped from the substrate.

Abstract: A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxynitride formed by alternating gaseous exposures of a boron amide precursor and a reactant gas. The method further includes patterning the dopant layer and forming an ultra-shallow dopant region in the substrate by diffusing boron from the boron dopant layer into the substrate by a thermal treatment.

Abstract: A heat treatment apparatus is provided with a reaction tube having a furnace opening formed at a lower end thereof, a lid body configured to hermetically seal the furnace opening of the reaction tube, a heat treatment boat supported on the lid body through a leg, and a rotating shaft extending through the lid body. The rotating shaft is connected to a lower end of the leg and configured to rotate the leg. The lid body is provided with a surrounding ring protruding upward to surround the lower end of the leg. An inert gas is supplied from an inert gas supply unit to a space between the lid body and the rotating shaft and discharged from a space between the lower end of the leg and the surrounding ring into the reaction tube.

Abstract: A plasma etching method deposits a silicon-containing deposit by a plasma processing using a Si-containing gas on an object to be processed that includes a film to be processed, an organic film formed in a plurality of narrow linear portions on the film to be processed, and a rigid film that covers both the film to be processed which is exposed between the linear portions and the linear portions. In the plasma etching method, each of the plurality of narrow linear portions of the organic film and the film to be processed between the linear portions are exposed by etching the silicon-containing deposit by plasma of CF-based gas and CHF-based gas after the silicon-containing deposit is deposited.

Abstract: A thermal processing apparatus and method with predictive temperature correction. Distances are measured from a backside of the wafer relative to a reference plane. Heat is transferred to the backside of the substrate in relation to the measured distances. This allows a baking unit to uniformly heat the substrate to compensate for irregularities or warpage.

Abstract: Provided are techniques for numerically integrating an intensity distribution function over a numerical aperture in a manner dependent on a determination of whether the numerical aperture spans a Rayleigh singularity. Where a singularity exists, Gaussian quadrature (cubature) is performed using a set of weights and points (nodes) that account for the effect of the Wood anomaly present within the aperture space. The numerical aperture may be divided into subregions separated by curves where the Wood anomaly condition is satisfied. Each subregion is then numerically integrated and a weighted sum of the subregion contributions is the estimate of the integral. Alternatively, generalized Gaussian quadrature (cubature) is performed where an analytical polynomial function which accounts for the effect of the Wood anomaly present within the aperture space is integrated. Points and nodes generated from a fit of the analytical polynomial function are then used for integration of the intensity distribution function.

Abstract: Disclosed are a liquid heating unit capable of monitoring the temperature of the liquid storage tank or pipe in which liquid is heated by transmission of the radiated light, a liquid processing apparatus including the same, and a liquid processing method. The liquid heating unit includes: a lamp heater radiating light; a cylindrical member made of material transmitting the radiated light and having a cylindrical shape in which the lamp heater is able to be inserted and penetrated into an internal space thereof; a liquid pipe placed along an outer periphery of the cylindrical member and configured to heat liquid flowing therein using the radiated light; a reflection plate that covers the liquid pipe from the outside and reflects the radiated light; and a first temperature sensor attached to an outer surface of the reflection plate.

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract: Provided is a cover opening/closing apparatus which includes: a wafer conveyance port having an opening edge and configured to be opened/closed by an opening/closing door; and a cover removal apparatus installed on the opening/closing door and configured to remove a cover of a FOUP which is formed with a substrate outlet having a opening edge. When the cover removal apparatus removes the cover of the FOUP, the opening edge of the substrate outlet is closely contacted with the opening edge of the wafer conveyance port. The cover removal apparatus includes: a latch key which is engaged with the cover of the FOUP, a driving unit configured to drive the latch key, and an accommodation unit configured to accommodate the driving unit. The cover opening/closing apparatus further includes an exhaust system configured to exhaust a space within the accommodation unit.

Abstract: A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.

Abstract: In a plasma processing apparatus, a mounting table is provided in a processing chamber, and a remote plasma generating unit is configured to generate an excited gas by exiting a hydrogen-containing gas. The remote plasma generating unit has an outlet for discharging the excited gas. A diffusion unit is provided to correspond to the outlet of the remote plasma generating unit and serves to receive the excited gas flowing from the outlet and diffuse the hydrogen active species having a reduced amount of hydrogen ions. An ion filter is disposed between the diffusion unit and the mounting table while being separated from the diffusion unit. The ion filter serves to capture the hydrogen ions contained in the hydrogen active species diffused by the diffusion unit and allow the hydrogen active species having a further reduced amount of hydrogen ions to pass therethrough the mounting table.

Abstract: There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

Abstract: A method of forming a semiconductor device. A substrate having first and second materials is provided, wherein the second material is occluded by the first material. The substrate is etched using a first non-plasma etch process that etches the first material at a higher rate relative to a rate of etching the second material. The first non-plasma etch process exposes the second material that is overlying at least a portion of the first material. The second material is then etched using a plasma containing a reactive gas, which exposes the at least a portion of the first material. The first material including the at least a portion of the first material that was exposed by etching the second material are etched using a second non-plasma etch process.

Abstract: A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

Abstract: Provided is an automated determination of an optimized parameterization of a scatterometry model for analysis of a sample diffracting structure having unknown parameters. A preprocessor determines from a plurality of floating model parameters, a reduced set of model parameters which can be reasonably floated in the scatterometry model based on a relative precision for each parameter determined from the Jacobian of measured spectral information with respect to each parameter. The relative precision for each parameter is determined in a manner which accounts for correlation between the parameters for a combination.